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Thermal analysis of GaN-based photonic membranes for optoelectronics
Authors:
Wilken Seemann,
Mahmoud Elhajhasan,
Julian Themann,
Katharina Dudde,
Guillaume Würsch,
Jana Lierath,
Joachim Ciers,
Åsa Haglund,
Nakib H. Protik,
Giuseppe Romano,
Raphaël Butté,
Jean-François Carlin,
Nicolas Grandjean,
Gordon Callsen
Abstract:
Semiconductor membranes find their widespread use in various research fields targeting medical, biological, environmental, and optical applications. Often such membranes derive their functionality from an inherent nanopatterning, which renders the determination of their, e.g., optical, electronic, mechanical, and thermal properties a challenging task. In this work we demonstrate the non-invasive,…
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Semiconductor membranes find their widespread use in various research fields targeting medical, biological, environmental, and optical applications. Often such membranes derive their functionality from an inherent nanopatterning, which renders the determination of their, e.g., optical, electronic, mechanical, and thermal properties a challenging task. In this work we demonstrate the non-invasive, all-optical thermal characterization of around 800-nm-thick and 150-$μ$m-wide membranes that consist of wurtzite GaN and a stack of In$_{0.15}$Ga$_{0.85}$N quantum wells as a built-in light source. Due to their application in photonics such membranes are bright light emitters, which challenges their non-invasive thermal characterization by only optical means. As a solution, we combine two-laser Raman thermometry with (time-resolved) photoluminescence measurements to extract the in-plane (i.e., $c$-plane) thermal conductivity $κ_{\text{in-plane}}$ of our membranes. Based on this approach, we can disentangle the entire laser-induced power balance during our thermal analysis, meaning that all fractions of reflected, scattered, transmitted, and reemitted light are considered. As a result of our thermal imaging via Raman spectroscopy, we obtain $κ_{\text{in-plane}}\,=\,165^{+16}_{-14}\,$Wm$^{-1}$K$^{-1}$ for our best membrane, which compares well to our simulations yielding $κ_{\text{in-plane}}\,=\,177\,$Wm$^{-1}$K$^{-1}$ based on an ab initio solution of the linearized phonon Boltzmann transport equation. Our work presents a promising pathway towards thermal imaging at cryogenic temperatures, e.g., when aiming to elucidate experimentally different phonon transport regimes via the recording of non-Fourier temperature distributions.
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Submitted 16 October, 2024;
originally announced October 2024.
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Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Authors:
Mahmoud Elhajhasan,
Wilken Seemann,
Katharina Dudde,
Daniel Vaske,
Gordon Callsen,
Ian Rousseau,
Thomas F. K. Weatherley,
Jean-François Carlin,
Raphaël Butté,
Nicolas Grandjean,
Nakib H. Protik,
Giuseppe Romano
Abstract:
We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence ($μ$PL) spectroscopy with Raman thermometry, we demonstrate how a robust value for the thermal conductivity $κ$ can be obtained using only optical, non-invasive means. For this, we consider the balance of different co…
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We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence ($μ$PL) spectroscopy with Raman thermometry, we demonstrate how a robust value for the thermal conductivity $κ$ can be obtained using only optical, non-invasive means. For this, we consider the balance of different contributions to thermal transport given by, e.g., excitons, charge carriers, and heat carrying phonons. Further complication is given by the fact that this membrane is made from direct bandgap semiconductors, designed to emit light based on an In$_{x}$Ga$_{1-x}$N ($x=0.15$) quantum well embedded in GaN. To meet these challenges, we designed a novel experimental setup that enables the necessary optical and thermal characterizations in parallel. We perform micro-Raman thermometry, either based on a heating laser that acts as a probe laser (1-laser Raman thermometry), or based on two lasers, providing the heating and the temperature probe separately (2-laser Raman thermometry). For the latter technique, we obtain temperature maps over tens of micrometers with a spatial resolution less than $1\,μ\text{m}$, yielding $κ\,=\,95^{+11}_{-7}\,\frac{\text{W}}{\text{m}\cdot \text{K}}$ for the $\textit{c}$-plane of our $\approx\,250\text{-nm}$-thick membrane at around room temperature, which compares well to our $\textit{ab initio}$ calculations applied to a simplified structure. Based on these calculations, we explain the particular relevance of the temperature probe volume, as quasi-ballistic transport of heat-carrying phonons occurs on length scales beyond the penetration depths of the heating laser and even its focus spot radius. The present work represents a significant step towards non-invasive, highly spatially resolved, and still quantitative thermometry performed on a photonic membrane.
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Submitted 8 March, 2024; v1 submitted 29 June, 2023;
originally announced June 2023.
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Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Authors:
Anthonin Delphan,
Maxim N. Makhonin,
Tommi Isoniemi,
Paul M. Walker,
Maurice S. Skolnick,
Dmitry N. Krizhanovskii,
Dmitry V. Skryabin,
Jean-François Carlin,
Nicolas Grandjean,
Raphaël Butté
Abstract:
Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. Stimulated polariton relaxation into multipl…
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Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. Stimulated polariton relaxation into multiple ring resonator modes is observed, which exhibit threshold-like dependence of the emission intensity with pulse energy. The strong exciton-photon coupling regime is confirmed by the significant reduction of the free spectral range with energy and the blueshift of the exciton-like modes with increasing pulse energy. Importantly, the exciton emission shows no broadening with power, further confirming that lasing is observed at electron-hole densities well below the Mott transition. Overall, our work paves the way towards development of novel UV devices based on the high-speed slab waveguide polariton geometry operating up to room temperature with potential to be integrated into complex photonic circuits.
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Submitted 28 October, 2022;
originally announced October 2022.
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Imaging non-radiative point defects buried in quantum wells using cathodoluminescence
Authors:
Thomas Weatherley,
Wei Liu,
Vitaly Osokin,
Duncan Alexander,
Robert Taylor,
Jean-François Carlin,
Raphaël Butté,
Nicolas Grandjean
Abstract:
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual non-radiative PDs buried in such QWs has so far not been demonstrated. Here, using high-resolution cathodoluminescence (CL) and a specific sample design, we spatially resolve, im…
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Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual non-radiative PDs buried in such QWs has so far not been demonstrated. Here, using high-resolution cathodoluminescence (CL) and a specific sample design, we spatially resolve, image, and analyse non-radiative PDs in InGaN/GaN QWs. We identify two different types of PD by their contrasting behaviour with temperature, and measure their densities from $10^{14}$ cm$^{-3}$ to as high as $10^{16}$ cm$^{-3}$. Our CL images clearly illustrate the interplay between PDs and carrier dynamics in the well: increasing PD concentration severely limits carrier diffusion lengths, while a higher carrier density suppresses the non-radiative behaviour of PDs. The results in this study are readily interpreted directly from CL images, and represent a significant advancement in nanoscale PD analysis.
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Submitted 17 March, 2021;
originally announced March 2021.
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Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature
Authors:
Davide Maria Di Paola,
Paul M. Walker,
Ruggero P. A. Emmanuele,
Alexey V. Yulin,
Joachim Ciers,
Zaffar Zaidi,
Jean-François Carlin,
Nicolas Grandjean,
Ivan Shelykh,
Maurice S. Skolnick,
R. Butté,
Dmitry N. Krizhanovskii
Abstract:
Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timescales and on length scales suitable for integrated photonics. Currently there is no platform that can provide this for the UV spectral range where…
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Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timescales and on length scales suitable for integrated photonics. Currently there is no platform that can provide this for the UV spectral range where broadband spectra generated by nonlinear modulation can pave the way to new on-chip ultrafast (bio-) chemical spectroscopy devices. We demonstrate the giant nonlinearity of UV hybrid light-matter states (exciton-polaritons) up to room temperature in an AlInGaN waveguide. We experimentally measure ultrafast nonlinear spectral broadening of UV pulses in a compact 100 $μ$m long device and deduce a nonlinearity 1000 times that in common UV nonlinear materials and comparable to non-UV polariton devices. Our demonstration promises to underpin a new generation of integrated UV nonlinear light sources for advanced spectroscopy and measurement.
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Submitted 22 June, 2021; v1 submitted 4 September, 2020;
originally announced September 2020.
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Towards bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon
Authors:
Sebastian Tamariz,
Gordon Callsen,
Johann Stachurski,
Kanako Shojiki,
Raphaël Butté,
Nicolas Grandjean
Abstract:
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with $g^{(2)}(0) = 0.17 \pm 0.08$ under continuous wave excitation. At this temperature, single photon emission rates up to $6\times10^6 \, \text{s}^{-1}$ are…
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Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with $g^{(2)}(0) = 0.17 \pm 0.08$ under continuous wave excitation. At this temperature, single photon emission rates up to $6\times10^6 \, \text{s}^{-1}$ are reached while $g^{(2)}(0) \leq 0.5$ is maintained. Our results are achieved for GaN QDs embedded in a planar AlN layer grown on silicon, representing a promising pathway for future interlinkage with optical waveguides and cavities. These samples allow exploring the limiting factors to key performance metrics for single photon sources, such as brightness and single photon purity. While high brightness is assured by large exciton binding energies, the single photon purity is mainly affected by the spectral overlap with the biexcitonic emission. Thus, the performance of a GaN QD as a single photon emitter depends on the balance between the emission linewidth and the biexciton binding energy. We identify small GaN QDs with an emission energy in excess of 4.2 eV as promising candidates for future room temperature applications, since the biexciton binding energy becomes comparable to the average emission linewidth of around 55 meV.
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Submitted 27 January, 2020;
originally announced January 2020.
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Probing alloy formation using different excitonic species: The particular case of InGaN
Authors:
Gordon Callsen,
Raphaël Butté,
Nicolas Grandjean
Abstract:
Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, her…
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Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, here, we present a spectroscopic study on exciton localization in a so-called mixed crystal alloy (class II) that allows us to access microscopic alloy parameters. We study bulk In$_x$Ga$_{1-x}$N epilayers at the onset of alloy formation (0 $\leq$ $x$ $\leq$ 2.4%) in order to understand the material's particular robustness to defects. Based on an in-depth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an $x$-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, meaning that they convert from a free to a bound particle upon alloy formation. Already at x = 2.4% the average exciton diffusion length is reduced to 5.7 $\pm$ 1.3 nm at a temperature of 12 K, thus, detrimental exciton transfer mechanisms towards non-radiative defects are suppressed. In addition, the associated low temperature PL data suggests that a single indium atom does not suffice in order to permanently capture an exciton. Micro-PL spectra even give access to a forthright probing of silicon bound excitons embedded in a particular environment of indium atoms, thanks to the emergence of a hierarchy of individual, energetically sharp emission lines (full width at half maximum $\approx$ 300 $μ$eV). Consequently, the present study allows us to extract first microscopic alloy properties formerly only accessible for class I alloys.
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Submitted 6 November, 2018;
originally announced November 2018.
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Propagating Polaritons in III-Nitride Slab Waveguides
Authors:
Joachim Ciers,
Jonas G. Roch,
Jean-François Carlin,
Gwénolé Jacopin,
Raphaël Butté,
Nicolas Grandjean
Abstract:
We report on III-nitride waveguides with c-plane GaN/AlGaN quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal mode splitting as large as 60 meV at low temperatures thanks to the large overlap between the optical mode and the active region, a polariton decay length up to 100 $μ$m for photon-like polaritons and lifetime of 1-2 ps; with t…
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We report on III-nitride waveguides with c-plane GaN/AlGaN quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal mode splitting as large as 60 meV at low temperatures thanks to the large overlap between the optical mode and the active region, a polariton decay length up to 100 $μ$m for photon-like polaritons and lifetime of 1-2 ps; with the latter values being essentially limited by residual absorption occurring in the waveguide. The fully lattice-matched nature of the structure allows for very low disorder and high in-plane homogeneity; an important asset for the realization of polaritonic integrated circuits that could support nonlinear polariton wavepackets up to room temperature thanks to the large exciton binding energy of 40 meV.
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Submitted 8 December, 2016;
originally announced December 2016.
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On thresholdless lasing features in high-$β$ nitride nanobeam cavities: a quantum optical study
Authors:
Stefan T. Jagsch,
Noelia Vico Triviño,
Frederik Lohof,
Gordon Callsen,
Stefan Kalinowski,
Ian M. Rousseau,
Roy Barzel,
Jean-François Carlin,
Frank Jahnke,
Raphaël Butté,
Christopher Gies,
Axel Hoffmann,
Nicolas Grandjean,
Stephan Reitzenstein
Abstract:
Exploring the limits of spontaneous emission coupling is not only one of the central goals in the development of nanolasers, it is also highly relevant regarding future large-scale photonic integration requiring energy-efficient coherent light sources with a small footprint. These studies are accompanied by a vivid debate on how to prove and interpret lasing in the high-$β$ regime. We investigate…
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Exploring the limits of spontaneous emission coupling is not only one of the central goals in the development of nanolasers, it is also highly relevant regarding future large-scale photonic integration requiring energy-efficient coherent light sources with a small footprint. These studies are accompanied by a vivid debate on how to prove and interpret lasing in the high-$β$ regime. We investigate close-to-ideal spontaneous emission coupling in GaN nanobeam lasers grown on silicon. Due to their high optical quality, such nanobeam cavities allow for efficient funneling of spontaneous emission from the quantum well gain material into the laser mode. By performing a comprehensive optical and quantum-optical characterization, supported by microscopic modeling of the nanolasers, we identify high-$β$ lasing at room temperature and show a lasing transition in the absence of a threshold nonlinearity at 156 K. This peculiar characteristic is explained in terms of a temperature and excitation power dependent interplay between 0D and 2D gain contributions.
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Submitted 16 August, 2017; v1 submitted 21 March, 2016;
originally announced March 2016.
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Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
Authors:
Guillaume Perillat-Merceroz,
Gatien Cosendey,
Jean-François Carlin,
Raphaël Butté,
Nicolas Grandjean
Abstract:
Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diodes, or high electron mobility transistors. In order to study the structural degradation mechanism of InAlN layers with increasing thickness, we p…
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Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diodes, or high electron mobility transistors. In order to study the structural degradation mechanism of InAlN layers with increasing thickness, we performed metalorganic vapor phase epitaxy of InAlN layers of thicknesses ranging from 2 to 500 nm, on free-standing (0001) GaN substrates with a low density of threading dislocations, for In compositions of 13.5% (layers under tensile strain), and 19.7% (layers under compressive strain). In both cases, a surface morphology with hillocks is initially observed, followed by the appearance of V-defects. We propose that those hillocks arise due to kinetic roughening, and that V-defects subsequently appear beyond a critical hillock size. It is seen that the critical thickness for the appearance of V-defects increases together with the surface diffusion length either by increasing the temperature or the In flux because of a surfactant effect. In thick InAlN layers, a better (worse) In incorporation occurring on the concave (convex) shape surfaces of the V-defects is observed leading to a top phase-separated InAlN layer lying on the initial homogeneous InAlN layer after V-defects coalescence. It is suggested that similar mechanisms could be responsible for the degradation of thick InGaN layers.
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Submitted 13 February, 2013;
originally announced February 2013.
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Large K-exciton dynamics in GaN epilayers: the non-thermal and thermal regime
Authors:
A. Vinattieri,
F. Bogani,
L. Cavigli,
D. Manzi,
M. Gurioli,
D. Martin,
E. Feltin,
J. -F. Carlin,
R. Buttè,
N. Grandjean
Abstract:
We present a detailed investigation concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focussing on the exciton formation and the transition from the nonthermal to the thermal regime. The time-resolved kinetics of LO-phonon replicas is used to address the energy relaxation in the excitonic band. From ps time-resolved spectra we bring evidence for a long lasting…
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We present a detailed investigation concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focussing on the exciton formation and the transition from the nonthermal to the thermal regime. The time-resolved kinetics of LO-phonon replicas is used to address the energy relaxation in the excitonic band. From ps time-resolved spectra we bring evidence for a long lasting non-thermal excitonic distribution which accounts for the rst 50 ps. Such a behavior is con rmed in di erent experimental conditions, both when non-resonant and resonant excitation are used. At low excitation power density the exciton formation and their subsequent thermalization is dominated by impurity scattering rather than by acoustic phonon scattering. The estimate of the average energy of the excitons as a function of delay after the excitation pulse provides information on the relaxation time, which describes the evolution of the exciton population to the thermal regime.
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Submitted 5 November, 2012;
originally announced November 2012.
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Spontaneous Polarisation Build up in a Room Temperature Polariton Laser
Authors:
J. J. Baumberg,
A. V. Kavokin,
S. Christopoulos,
A. J. D. Grundy,
R. Butte,
G. Christmann,
D. D. Solnyshkov,
G. Malpuech,
G. Baldassarri Hoger von Hogersthal,
E. Feltin,
J. -F. Carlin,
N. Grandjean
Abstract:
We observe the build up of strong (~50%) spontaneous vector polarisation in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one excitation pulse to another, so that the time-integrated polarisation remains zero. This behaviour is completely different to any previous laser. We i…
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We observe the build up of strong (~50%) spontaneous vector polarisation in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one excitation pulse to another, so that the time-integrated polarisation remains zero. This behaviour is completely different to any previous laser. We interpret this observation in terms of the spontaneous symmetry breaking in a Bose-Einstein condensate of exciton-polaritons.
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Submitted 12 August, 2008;
originally announced August 2008.
