Showing 1–9 of 9 results for author: Burriel, M

Exploring the potential of combining over- and under-stoichiometric MIEC materials for Oxygen-Ion Batteries

Authors: Silvère Panisset, Alexander Schmid, Alexander Stangl, Juergen Fleig, David Jauffres, Mónica Burriel

Abstract: The increasing demand for energy storage solutions has spurred intensive research into next-generation battery technologies. Oxygen-ion batteries (OIBs), which leverage mixed ionic-electronic conducting (MIEC) oxides, have emerged as promising candidates due to their solid, non-flammable nature and potential for high power densities. This study investigates the use of over-stoichiometric La2NiO4+d… ▽ More The increasing demand for energy storage solutions has spurred intensive research into next-generation battery technologies. Oxygen-ion batteries (OIBs), which leverage mixed ionic-electronic conducting (MIEC) oxides, have emerged as promising candidates due to their solid, non-flammable nature and potential for high power densities. This study investigates the use of over-stoichiometric La2NiO4+delta (L2NO4) as a cathode material for OIBs, exploring its capacity for electrochemical energy storage. Half-cell measurements reveal that L2NO4 with a closed-pore microstructure can store oxygen, achieving a volumetric charge of 63 mA.h.cm-3 at 400 °C with a current density of 3.6 uA.cm-2 and potentials up to 0.75 V vs. 1 bar O2. Additionally, a functional full cell combining over-stoichiometric L2NO4 and under-stoichiometric La0.5Sr0.5Cr0.2Mn0.8O3-delta (LSCrMn) has been successfully developed, demonstrating excellent cyclability and coulomb efficiency. The full cell reaches a maximum volumetric charge of 90 mA.h.cm-3 at 400 °C, 17.8 uA.cm-2, and a cut-off voltage of 1.8 V. This proof of concept underscores the viability of combining over- and under-stoichiometric MIEC materials in OIBs and provides critical insights into optimizing electrode materials and tuning oxygen content for improved performance. This research lays the groundwork for future advancements in OIB technology, aiming to develop materials with lower resistance and higher efficiency. △ Less

Submitted 9 September, 2024; originally announced September 2024.

Real time observation of oxygen diffusion in CGO thin films using spatially resolved Isotope Exchange Raman Spectroscopy

Authors: Alexander Stangl, Nicolas Nuns, Caroline Pirovano, Kosova Kreka, Francesco Chiabrera, Albert Tarancón, Mónica Burriel

Abstract: The exploitation of advanced materials for novel energy, health and computing applications requires fundamental understanding of enabling physicochemical mechanisms, including ionic and electronic conductivity, defect formation processes and reaction kinetics. Therefore, access to underlying constants of functional materials via advanced but straightforward experimental techniques is key. We prese… ▽ More The exploitation of advanced materials for novel energy, health and computing applications requires fundamental understanding of enabling physicochemical mechanisms, including ionic and electronic conductivity, defect formation processes and reaction kinetics. Therefore, access to underlying constants of functional materials via advanced but straightforward experimental techniques is key. We present a novel, cheap and widely applicable approach to analyze oxygen-tracer-diffusion in thin films with unprecedented time resolution based on the novel in situ isotope-exchange Raman spectroscopy (IERS) methodology. Raman spectroscopy is sensitive to changes in the local isotopic composition, manifested by a frequency shift of the oxygen Raman modes. Employing a Raman transparent capping layer allows to establish an in-plane tracer gradient and follow the isotope exchange and diffusion processes via consecutive spatial and time resolved in situ Raman line scans. Mass-transport coefficients are calculated from these isotopic gradients, similar to conventional techniques, but with an additional time-component, not accessible by other techniques. Here, we study gadolinium doped ceria (CGO) thin films, capped with Si3N4 or Al2O3. We report diffusion coefficients within the temperature range of interest for intermediate temperature emerging applications (300-500°C) and confirm the validity of the measurement procedure and extracted parameters by comparison with FEM simulations and literature results. △ Less

Submitted 27 August, 2024; v1 submitted 14 May, 2024; originally announced May 2024.

Impact of the La2NiO4+δ oxygen content on the synaptic properties of the TiN/La2NiO4+δ/Pt memristive devices

Authors: Aleksandra Koroleva, Thoai-Khanh Khuu, César Magén, Hervé Roussel, Carmen Jiménez, Céline Ternon, Elena-Ioana Vatajelu, Mónica Burriel

Abstract: The rapid development of brain-inspired computing requires new artificial components and architectures for its hardware implementation. In this regard, memristive devices emerged as potential candidates for artificial synapses because of their ability to emulate the plasticity of the biological synapses. In this work, the synaptic behavior of the TiN/La2NiO4+δ/Pt memristive devices based on therma… ▽ More The rapid development of brain-inspired computing requires new artificial components and architectures for its hardware implementation. In this regard, memristive devices emerged as potential candidates for artificial synapses because of their ability to emulate the plasticity of the biological synapses. In this work, the synaptic behavior of the TiN/La2NiO4+δ/Pt memristive devices based on thermally annealed La2NiO4+δ films is thoroughly investigated. Using electron energy loss spectroscopy, we show that annealing using reducing (Ar) or oxidizing (O2) atmospheres affects the interstitial oxygen content (δ) in the La2NiO4+δ films. Electrical characterization shows that both devices exhibit long-term potentiation/depression and spike-timing-dependent plasticity, which makes them suitable for neuromorphic applications. At the same time, the Ar annealed TiN/La2NiO4+δ/Pt device demonstrates non-volatile properties with low energy consumption during the learning process. On the other hand, in the O2 annealed TiN/La2NiO4+δ/Pt device the resistive switching behavior is more volatile and requires more energy for synaptic learning. Finally, the simulation tools show that spiking neural network architectures with unsupervised learning rules based on the experimental data achieve high inference accuracy in the digit recognition task, which proves the potential of TiN/La2NiO4+δ/Pt devices for artificial synapse applications. △ Less

Submitted 30 July, 2024; v1 submitted 18 February, 2024; originally announced February 2024.

Isotope Exchange Raman Spectroscopy (IERS): a novel technique to probe physicochemical processes $in$ $situ$

Authors: Alexander Stangl, Dolors Pla, Caroline Pirovano, Odette Chaix-Pluchery, Federico Baiutti, Francesco Chiabrera, Albert Tarancón, Carmen Jiménez, Michel Mermoux, Mónica Burriel

Abstract: We have developed a novel in situ methodology for the direct study of mass transport properties in oxides with spatial and unprecedented time resolution, based on Raman spectroscopy coupled to isothermal isotope exchanges. Changes in the isotope concentration, resulting in a Raman frequency shift, can be followed in real time, not accessible by conventional methods, enabling complementary insights… ▽ More We have developed a novel in situ methodology for the direct study of mass transport properties in oxides with spatial and unprecedented time resolution, based on Raman spectroscopy coupled to isothermal isotope exchanges. Changes in the isotope concentration, resulting in a Raman frequency shift, can be followed in real time, not accessible by conventional methods, enabling complementary insights for the study of ion transport properties of electrode and electrolyte materials for advanced solid-state electrochemical devices. The proof of concept and strengths of isotope exchange Raman spectroscopy (IERS) are demonstrated by studying the oxygen isotope back-exchange in gadolinium-doped ceria (CGO) thin films. Resulting oxygen self-diffusion and surface exchange coefficients are compared to conventional time-of-flight secondary ion mass spectrometry (ToF-SIMS) characterisation and literature values, showing good agreement, while at the same time providing additional insight, challenging established assumptions. IERS captivates through its rapidity, simple setup, non-destructive nature, cost effectiveness and versatile fields of application and thus can readily be integrated as new standard tool for in situ and operando characterization in many laboratories worldwide. The applicability of this method is expected to consolidate our understanding of elementary physicochemical processes and impact various emerging fields including solid oxide cells, battery research and beyond. △ Less

Submitted 7 April, 2023; originally announced April 2023.

Tailored nano-columnar La$_2$NiO$_4$ cathodes for improved electrode performance

Authors: Alexander Stangl, Adeel Riaz, Laetitia Rapenne, José Manuel Caicedo, Carmen Jiménez, Michel Mermoux, Mónica Burriel

Abstract: La$_2$NiO$_4$ is a very promising cathode material for intermediate and low temperature solid oxide cell applications, due to its good electronic and ionic conductivity, together with its high oxygen exchange activity with a low activation energy. Oxygen incorporation and transport in La$_2$NiO$_4$ (L2NO4) thin films is limited by surface reactions. Hence, tailoring the morphology is expected to l… ▽ More La$_2$NiO$_4$ is a very promising cathode material for intermediate and low temperature solid oxide cell applications, due to its good electronic and ionic conductivity, together with its high oxygen exchange activity with a low activation energy. Oxygen incorporation and transport in La$_2$NiO$_4$ (L2NO4) thin films is limited by surface reactions. Hence, tailoring the morphology is expected to lead to an overall improvement of the electrode performance. We report on the growth of nano-architectured La$_2$NiO$_4$ thin film electrodes by Pulsed Injection Metal Organic Vapour Deposition (PI-MOCVD), achieving vertically gapped columns with multi-fold active surface area, leading to much faster oxygen exchange. This nano-columnar structure is rooted in a dense bottom layer serving as good electronic and ionic conduction pathway. The microstructure is tuned by modification of the growth temperature and characterised by SEM, TEM and XRD. We studied the effect of surface activity by electrical conductivity relaxation measurements in fully dense and nano-columnar La$_2$NiO$_4$ thin films of various thicknesses grown on several different single crystal substrates. Our results demonstrate that the increased surface area, in combination with the opening of different surface terminations, leads to a significant enhancment of the total exchange activity in our films with optimized nano-architectured microstructure. △ Less

Submitted 9 December, 2021; originally announced December 2021.

Journal ref: J. Mater. Chem. A, 2021

$In$ $situ$ and $operando$ characterisation techniques for solid oxide electrochemical cells: Recent advances

Authors: Alexander Stangl, David Muñoz-Rojas, Mónica Burriel

Abstract: Oxygen activity and surface stability are two key parameters in the search for advanced materials for intermediate temperature solid oxide electrochemical cells, as overall device performance depends critically on them. In particular $in$ $situ$ and $operando$ characterisation techniques have accelerated the understanding of degradation processes and the identification of active sites, motivating… ▽ More Oxygen activity and surface stability are two key parameters in the search for advanced materials for intermediate temperature solid oxide electrochemical cells, as overall device performance depends critically on them. In particular $in$ $situ$ and $operando$ characterisation techniques have accelerated the understanding of degradation processes and the identification of active sites, motivating the design and synthesis of improved, nanoengineered materials. In this short topical review we report on the latest developments of various sophisticated $in$ $situ$ and $operando$ characterization techniques, including Transmission and Scanning Electron Microscopy (TEM and SEM), surface-enhanced Raman spectroscopy (SERS), Electrochemical Impedance Spectroscopy (EIS), X-ray Diffraction (XRD) and synchrotron based X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS), among others. We focus on their use in three emerging topics, namely: (i) the analysis of general electrochemical reactions and the surface defect chemistry of electrode materials; (ii) the evolution of electrode surfaces achieved by nanoparticle exsolution for enhanced oxygen activity and (iii) the study of surface degradation caused by Sr segregation, leading to reduced durability. For each of these topics we highlight the most remarkable examples recently published. We anticipate that ongoing improvements in the characterisation techniques and especially a complementary use of them by multimodal approaches will lead to improved knowledge of $operando$ processes, hence allowing a significant advancement in cell performance in the near future. △ Less

Submitted 6 September, 2020; originally announced September 2020.

Unraveling Bulk and Grain Boundary Electrical Properties in La0.8Sr0.2Mn1-yO3 Thin Films

Authors: Francesco Chiabrera, Inigo Garbayo, Dolors Pla, Monica Burriel, Fabrice Wilhelm, Andrei Rogalev, Marc Nunez, Alex Morata, Albert Tarancon

Abstract: Grain boundaries in Sr-doped LaMnO3 thin films have been shown to strongly influence the electronic and oxygen mass transport properties, being able to profoundly modify the nature of the material. The unique behaviour of the grain boundaries can be correlated with substantial modifications of the cation concentration at the interfaces, which can be tuned by changing the overall cationic ratio in… ▽ More Grain boundaries in Sr-doped LaMnO3 thin films have been shown to strongly influence the electronic and oxygen mass transport properties, being able to profoundly modify the nature of the material. The unique behaviour of the grain boundaries can be correlated with substantial modifications of the cation concentration at the interfaces, which can be tuned by changing the overall cationic ratio in the films. In this work, we study the electronic properties of La0.8Sr0.2Mn1-yO3 thin films with variable Mn content. The influence of the cationic composition on the grain boundary and grain bulk electronic properties is elucidated by studying the manganese valence state evolution using spectroscopy techniques and by confronting the electronic properties of epitaxial and polycrystalline films. Substantial differences in the electronic conduction mechanism are found in the presence of grain boundaries and depending on the manganese content. Moreover, the unique defect chemistry of the nanomaterial is elucidated by measuring the electrical resistance of the thin films as a function of oxygen partial pressure, disclosing the importance of the cationic local non-stoichiometry on the thin films behavior. △ Less

Submitted 1 March, 2019; originally announced March 2019.

Journal ref: Chiabrera, Francesco, et al. Unraveling bulk and grain boundary electrical properties in La0.8Sr0.2Mn1-yO3 thin films. APL Materials 7.1, 2019, 013205

Unveiling the outstanding oxygen mass transport properties of Mn-rich perovskites in grain boundary-dominated La0.8Sr0.2(Mn1-xCox)0.85O3-d nanostructures

Authors: Aruppukottai M. Saranya, Alex Morata, Dolors Pla, Monica Burriel, Francesco Chiabrera, Inigo Garbayo, Aitor Hornes, John A. Kilner, Albert Tarancon

Abstract: Ion transport in solid-state devices is of great interest for current and future energy and information technologies. A superior enhancement of several orders of magnitude of the oxygen diffusivity has been recently reported for grain boundaries in lanthanum strontium manganites. However, the significance and extent of this unique phenomenon is not yet established. Here, we fabricate a thin film c… ▽ More Ion transport in solid-state devices is of great interest for current and future energy and information technologies. A superior enhancement of several orders of magnitude of the oxygen diffusivity has been recently reported for grain boundaries in lanthanum strontium manganites. However, the significance and extent of this unique phenomenon is not yet established. Here, we fabricate a thin film continuous composition map of the La0.8Sr0.2(Mn1-xCox)0.85O3-d family revealing a substantial enhancement of the grain boundary oxygen mass transport properties for the entire range of compositions. Through isotope-exchange depth profiling coupled to secondary ion mass spectroscopy, we show that this excellent performance is not directly linked to the bulk of the material but to the intrinsic nature of the grain boundary. In particular, the great increase of the oxygen diffusion in Mn-rich compositions unveils an unprecedented catalytic performance in the field of Mixed Ionic Electronic Conductors. These results present grain boundaries engineering as a novel strategy for designing highly performing materials for solid state ionics based devices. △ Less

Submitted 30 November, 2018; originally announced November 2018.

Journal ref: Chemistry of Materials 30, 5621, 2018

Chemical Diffusion at Mixed Ionic Electronic Semiconductor Interfaces and comparison with La2NiO4+d epitaxial thin films

Authors: J. Roqueta, A. Apostolidis, J. Chaigneau, R. Moreno, J. Zapata, M. Burriel, J. Santiso

Abstract: A simple model to describe Mixed Ionic Electronic Conductors (MIEC) in terms of standard semiconductor physics is described. This model allows to understand defect equilibrium and charge transport at ideal heterojunctions between materials simultaneously conducting electronic and ionic point defects and to explore how rectifying effects on the electronic or ionic currents may affect the chemical d… ▽ More A simple model to describe Mixed Ionic Electronic Conductors (MIEC) in terms of standard semiconductor physics is described. This model allows to understand defect equilibrium and charge transport at ideal heterojunctions between materials simultaneously conducting electronic and ionic point defects and to explore how rectifying effects on the electronic or ionic currents may affect the chemical diffusion and voltage at the interfaces under polarization. We found qualitatively good agreement with experimental measurements of the electrical conductivity relaxation of La2NiO4+d thin films epitaxially grown on NdGaO3 (110) substrates when the possible oxygen exchange between film and substrate is taken into account. We discuss the implications of this model to understand space charge layer formation and chemical diffusion on oxide thin film heterostructures when exposed to high temperatures and different oxygen partial pressures. △ Less

Submitted 25 July, 2013; originally announced July 2013.