Impedance spectroscopy of ferroelectrics: The domain wall pinning element
Authors:
M. Becker,
C. J. Burkhardt,
R. Kleiner,
D. Koelle
Abstract:
We introduce an equivalent-circuit element based on the theory of interface pinning in random systems, to analyze the contribution of domain wall motion below the coercive field to the impedance of a ferroelectric, as a function of amplitude $E_0$ and frequency $f$ of an applied ac electric field. We investigate capacitor stacks, containing ferroelectric 0.5(Ba$_{0.7}$Ca$_{0.3}$)TiO$_{3}$--0.5Ba(Z…
▽ More
We introduce an equivalent-circuit element based on the theory of interface pinning in random systems, to analyze the contribution of domain wall motion below the coercive field to the impedance of a ferroelectric, as a function of amplitude $E_0$ and frequency $f$ of an applied ac electric field. We investigate capacitor stacks, containing ferroelectric 0.5(Ba$_{0.7}$Ca$_{0.3}$)TiO$_{3}$--0.5Ba(Zr$_{0.2}$Ti$_{0.8}$)O$_{3}$ (BCZT) thin films, epitaxially grown by pulsed laser deposition on Nb-doped SrTiO$_3$ single crystal substrates and covered with Au electrodes. Impedance spectra from $f=10$\,Hz to 1\,MHz were collected at different $E_0$. Deconvolution of the spectra is achieved by fitting the measured impedance with an equivalent-circuit model of the capacitor stacks, and we extract the domain-wall-motion induced amplitude- and frequency-dependent dielectric response of the BCZT films from the obtained fit parameters. From an extended Rayleigh analysis, we quantify the coupling strength between dielectric nonlinearity and dielectric dispersion in the BCZT films and identify different domain-wall-motion regimes. Finally, we construct a schematic diagram of the different domain-wall-motion regimes and discuss the corresponding domain-wall dynamics.
△ Less
Submitted 9 March, 2021; v1 submitted 11 August, 2020;
originally announced August 2020.
Josephson junctions and SQUIDs created by focused helium ion beam irradiation of YBa$_2$Cu$_3$O$_7$
Authors:
B. Müller,
M. Karrer,
F. Limberger,
M. Becker,
B. Schröppel,
C. J. Burkhardt,
R. Kleiner,
E. Goldobin,
D. Koelle
Abstract:
By scanning with a $30\, \mathrm{keV}$ focused He ion beam (He-FIB) across YBa$_2$Cu$_3$O$_7$ (YBCO) thin film microbridges, we create Josephson barriers with critical current density $j_\mathrm{c}$ adjustable by irradiation dose $D$. The dependence $j_\mathrm{c} (D)$ yields an exponential decay. At $4.2\, \mathrm{K}$, a transition from flux-flow to Josephson behavior occurs when $j_\mathrm{c}$ de…
▽ More
By scanning with a $30\, \mathrm{keV}$ focused He ion beam (He-FIB) across YBa$_2$Cu$_3$O$_7$ (YBCO) thin film microbridges, we create Josephson barriers with critical current density $j_\mathrm{c}$ adjustable by irradiation dose $D$. The dependence $j_\mathrm{c} (D)$ yields an exponential decay. At $4.2\, \mathrm{K}$, a transition from flux-flow to Josephson behavior occurs when $j_\mathrm{c}$ decreases below $\approx 2\, \mathrm{MA/cm^2}$. The Josephson junctions exhibit current-voltage characteristics (IVCs) that are well described by the resistively and capacitively shunted junction model, without excess current for characteristic voltages $V_\mathrm{c} \lesssim 1\, \mathrm{mV}$. Devices on MgO and LSAT substrates show non-hysteretic IVCs, while devices on SrTiO$_3$ show a small hysteresis. For all junctions an approximate scaling $V_\mathrm{c} \propto j_\mathrm{c}^{1/2}$ is found. He-FIB irradiation with high dose produces barriers with $j_\mathrm{c}=0$ and high resistances of $10\, \mathrm{kΩ} \ldots 1\, \mathrm{GΩ}$. This provides the possibility to write highly resistive walls or areas into YBCO using a He-FIB. Transmission electron microscopy reveals an amorphous phase within the walls, whereas for lower doses the YBCO stays crystalline. We have also ``drawn'' superconducting quantum interference devices (SQUIDs) by using a He-FIB for definition of the SQUID hole and the junctions. The SQUIDs show high performance, with flux noise $< 500\, \mathrm{n Φ_0/Hz^{1/2}}$ in the thermal white noise limit for a device with $19\, \mathrm{pH}$ inductance.
△ Less
Submitted 29 April, 2019; v1 submitted 23 January, 2019;
originally announced January 2019.
