Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures
Authors:
M. J. Curry,
M. Rudolph,
T. D. England,
A. M. Mounce,
R. M. Jock,
C. Bureau-Oxton,
P. Harvey-Collard,
P. A. Sharma,
J. M. Anderson,
D. M. Campbell,
J. R. Wendt,
D. R. Ward,
S. M. Carr,
M. P. Lilly,
M. S. Carroll
Abstract:
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance o…
▽ More
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/$\sqrt{\textrm{Hz}}$ and 400 μe/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction.
△ Less
Submitted 14 January, 2019;
originally announced January 2019.
Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
▽ More
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
△ Less
Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
