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Electron diffusivities in MgB2 from point contact spectroscopy
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. D. Caplin,
L. F. Cohen,
A. V. Pogrebnyakov,
X. X. Xi
Abstract:
We demonstrate that the variation of the Andreev reflection with applied magnetic field provides a direct means of comparing the properties of MgB2 with the theory for a dirty two-band superconductor, and we find good agreement between the two. The ratio of electron diffusivities in the s and p bands can be inferred from this experiment. We find that the field dependence of the density of states…
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We demonstrate that the variation of the Andreev reflection with applied magnetic field provides a direct means of comparing the properties of MgB2 with the theory for a dirty two-band superconductor, and we find good agreement between the two. The ratio of electron diffusivities in the s and p bands can be inferred from this experiment. We find that the field dependence of the density of states at the Fermi level in the p band is independent of the field direction, and that the anisotropic upper critical field is determined by the anisotropic diffusivity in the s band.
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Submitted 5 February, 2005;
originally announced February 2005.
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Investigation of the growth and magnetic properties of highly oriented films of the Heusler alloy Co2MnSi on GaAs(001)
Authors:
L. J. Singh,
Z. H. Barber,
A. Kohn,
A. K. Petford-Long,
Y. Miyoshi,
Y. Bugoslavsky,
L. F. Cohen
Abstract:
Highly (001) oriented thin films of Co2MnSi have been grown on lattice matched GaAs(001) without a buffer layer. Stoichiometric films exhibited a saturation magnetization slightly reduced from the bulk value and films grown at the highest substrate temperature of 689 K showed the lowest resistivity (33 micro.ohm.cm at 4.2 K) and the lowest coercivity (14 Oe). The spin polarization of the transpo…
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Highly (001) oriented thin films of Co2MnSi have been grown on lattice matched GaAs(001) without a buffer layer. Stoichiometric films exhibited a saturation magnetization slightly reduced from the bulk value and films grown at the highest substrate temperature of 689 K showed the lowest resistivity (33 micro.ohm.cm at 4.2 K) and the lowest coercivity (14 Oe). The spin polarization of the transport current was found to be of the order of 55% as determined by point contact Andreev reflection spectroscopy. The reduced magnetization obtained was attributed to the antiferromagnetic Mn2As phase. Twofold in-plane magnetic anisotropy was observed due to the inequivalence of the <110> directions, and this was attributed to the nature of the bonding at the reconstructed GaAs surface.
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Submitted 22 December, 2004;
originally announced December 2004.
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Andreev Reflection Spectroscopy in Niobium Point Contacts in Magnetic Field
Authors:
Y. Miyoshi,
Y. Bugoslavsky,
L. F. Cohen
Abstract:
The Blonder-Tinkham-Klapwijk model of the Point-Contact Andreev Reflection spectroscopy does not provide an adequate description of experiment in the presence of magnetic field. We demonstrate this using a junction between a niobium tip and a copper film. We modify the the-ory to explicitly take into account the contribution to conductance that stems from the normal vortex cores in the supercond…
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The Blonder-Tinkham-Klapwijk model of the Point-Contact Andreev Reflection spectroscopy does not provide an adequate description of experiment in the presence of magnetic field. We demonstrate this using a junction between a niobium tip and a copper film. We modify the the-ory to explicitly take into account the contribution to conductance that stems from the normal vortex cores in the superconductor. These results have important implications for interpretation of transport spin polarisation measurements using PCAR technique. We demonstrate that stray magnetic fields can be responsible for the experimentally observed dependence of the spin po-larisation on the strength of the interface barrier, and potential misassignment of the inferred spin polarisation.
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Submitted 5 February, 2005; v1 submitted 11 October, 2004;
originally announced October 2004.
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Enhancement of Critical Current Density in low level Al-doped MgB2
Authors:
A. Berenov,
A. Serquis,
X. Z. Liao,
Y. T. Zhu,
D. E. Peterson,
Y. Bugoslavsky,
K. A. Yates,
M. G. Blamire,
L. F. Cohen,
J. L. MacManus-Driscoll
Abstract:
Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg site. The critical temperature (Tc) remained largely unchanged with Al doping. For 1 - 2.5 at.% doping, at 20K the in-field critical current densities (Jc's) were…
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Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg site. The critical temperature (Tc) remained largely unchanged with Al doping. For 1 - 2.5 at.% doping, at 20K the in-field critical current densities (Jc's) were enhanced, particularly at lower fields. At 5K, in-field Jc was markedly improved, e.g. at 5T Jc was enhanced by a factor of 20 for a doping level of 1 at.% Al. The improved Jcs correlate with increased sample resistivity indicative of an increase in the upper critical field, Hc2, through alloying.
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Submitted 24 May, 2004;
originally announced May 2004.
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Structural, magnetic and transport properties of thin films of the Heusler alloy Co2MnSi
Authors:
L. J. Singh,
Z. H. Barber,
Y. Miyoshi,
Y. Bugoslavsky,
W. R. Branford,
L. F. Cohen
Abstract:
Thin films of Co2MnSi have been grown on a-plane sapphire substrates from three elemental targets by dc magnetron co-sputtering. These films are single phase, have a strong (110) texture and a saturation magnetization of 4.95 uB/formula unit at 10 K. Films grown at the highest substrate temperature of 715 K showed the lowest resistivity (47 uOhm cm at 4.2 K) and the lowest coercivity (18 Oe). Th…
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Thin films of Co2MnSi have been grown on a-plane sapphire substrates from three elemental targets by dc magnetron co-sputtering. These films are single phase, have a strong (110) texture and a saturation magnetization of 4.95 uB/formula unit at 10 K. Films grown at the highest substrate temperature of 715 K showed the lowest resistivity (47 uOhm cm at 4.2 K) and the lowest coercivity (18 Oe). The spin polarization of the transport current was found to be of the order of 54% as determined by point contact Andreev reflection spectroscopy. A decrease in saturation magnetization with decreasing film thickness and different transport behaviour in thinner films indicate a graded disorder in these films grown on non-lattice matched substrates.
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Submitted 13 November, 2003;
originally announced November 2003.
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Superconducting gap structure and pinning in disordered MgB2 films
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. D. Caplin,
L. F. Cohen,
H. Y. Zhai,
H. M. Christen,
A. V. Pogrebnyakov,
X. X. Xi,
O. V. Dolgov
Abstract:
We have performed a comparative study of two thin films of magnesium diboride (MgB2) grown by different techniques. The critical current density at different temperatures and magnetic fields was evaluated from magnetisation curves, the structure of superconducting order parameter was obtained from point-contact spectroscopy, and the scattering rates were evaluated by fitting the temperature depe…
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We have performed a comparative study of two thin films of magnesium diboride (MgB2) grown by different techniques. The critical current density at different temperatures and magnetic fields was evaluated from magnetisation curves, the structure of superconducting order parameter was obtained from point-contact spectroscopy, and the scattering rates were evaluated by fitting the temperature dependent normal-state resistivity to the two-band model. The films have similar critical temperatures close to 39 K, but the upper critical fields were different by a factor of 2 (5.2T and 2.5 T at 20 K). We have found that the film with higher Hc2 also had stronger scattering in the sigma band and smaller value of the superconducting gap in this band. As the scattering in sigma band is primarily due to the defects in boron plane, our results are consistent with the assumption that disordering the boron planes leads to enhanced Hc2 and better pinning properties in magnetic field.
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Submitted 25 September, 2003;
originally announced September 2003.
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The effect of magnetic field on the two superconducting gaps in MgB2
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. D. Caplin,
L. F. Cohen,
A. V. Pogrebnyakov,
X. X. Xi
Abstract:
Double-gap superconductivity in an epitaxial MgB2 film has been studied by means of point-contact spectroscopy in magnetic field up to 8 Tesla. The relatively fast disappearance of the feature associated with the pi-band gap at a field around 1 T is caused by the line broadening due to strong pair breaking rather than to a collapse of the double-gap state. This pair breaking was found to increas…
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Double-gap superconductivity in an epitaxial MgB2 film has been studied by means of point-contact spectroscopy in magnetic field up to 8 Tesla. The relatively fast disappearance of the feature associated with the pi-band gap at a field around 1 T is caused by the line broadening due to strong pair breaking rather than to a collapse of the double-gap state. This pair breaking was found to increase linearly with field. Field dependences of the order parameters Delta_pi and Delta_sigma in the pi and sigma bands were measured in field applied parallel and perpendicular to the film, at T = 4.2 K. In perpendicular field, both order parameters survive to a common Hc2, which is about 6.5 T for this direction. In parallel field, the decrease of Delta_sigma is much more gradual, consistent with the Hc2 being about 4 times greater in this ori-entation. The difference in Delta_pi measured in the two field orientations is however smaller than the difference of Delta_sigma. We compare these results with the data on tunnelling spectroscopy and specific heat measurements of MgB2 single crystals and find consistency between the different experimental approaches.
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Submitted 1 September, 2003; v1 submitted 22 July, 2003;
originally announced July 2003.
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Effects of proton irradiation and ageing on the superconducting properties of single crystalline and polycrystalline MgB2
Authors:
G. K. Perkins,
Y. Bugoslavsky,
A . D. Caplin,
J. Moore,
T. J. Tate,
R. Gwilliam,
J. Jun,
S. M. Kazakov,
J. Karpinski,
L. F. Cohen
Abstract:
We present magnetisation data on crystalline and polycrystalline MgB2 before and after irradiation with ~1MeV protons. In the virgin crystal the critical current density is below our noise floor of 103A/cm2 over most of the field range. However, after irradiation a peak occurs in the current density as a function of applied magnetic field as the upper critical field Hc2 is approached. After subs…
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We present magnetisation data on crystalline and polycrystalline MgB2 before and after irradiation with ~1MeV protons. In the virgin crystal the critical current density is below our noise floor of 103A/cm2 over most of the field range. However, after irradiation a peak occurs in the current density as a function of applied magnetic field as the upper critical field Hc2 is approached. After subsequent ageing over a time period of three months, the peak effect is greatly enhanced, exhibiting much stronger pinning over a wide field range, and the upper critical field is approximately doubled, accompanied by a 2K reduction in transition temperature. Similar studies were made on polycrystalline fragments, where irradiation leads to an increased irreversibility field (Jc is enhanced at high fields but decreased at low fields) and a suppression in transition temperature. However, after two years of ageing both parameters returned towards those of the virgin sample.
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Submitted 12 May, 2003;
originally announced May 2003.
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Critical Fields and Critical Currents in MgB2
Authors:
A. D. Caplin,
Y. Bugoslavsky,
L. F. Cohen,
L. Cowey,
J. Driscoll,
J. Moore,
G. K. Perkins
Abstract:
We review recent measurements of upper (Hc2) and lower (Hc1) critical fields in clean single crystals of MgB2, and their anisotropies between the two principal crystallographic directions. Such crystals are far into the "clean limit" of Type II superconductivity, and indeed for fields applied in the c-direction, the Ginzburg-Landau parameter k is only about 3, just large enough for Type II behav…
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We review recent measurements of upper (Hc2) and lower (Hc1) critical fields in clean single crystals of MgB2, and their anisotropies between the two principal crystallographic directions. Such crystals are far into the "clean limit" of Type II superconductivity, and indeed for fields applied in the c-direction, the Ginzburg-Landau parameter k is only about 3, just large enough for Type II behaviour. Because m0Hc2 is so low, about 3 T for fields in the c-direction, MgB2 has to be modified for it to become useful for high-current applications. It should be possible to increase Hc2 by the introduction of strong electron scattering (but because of the electronic structure and the double gap that results, the scatterers will have to be chosen carefully). In addition, pinning defects on a scale of a few nm will have to be engineered in order to enhance the critical current density at high fields.
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Submitted 1 November, 2002;
originally announced November 2002.
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Effective Vortex Pinning in MgB2 thin films
Authors:
Y. Bugoslavsky,
L. Cowey,
T. J. Tate,
G. K. Perkins,
J. Moore,
Z. Lockman,
A. Berenov,
J. L. MacManus-Driscoll,
A. D. Caplin,
L. F. Cohen,
H Y Zhai,
H M Christen,
M P Paranthaman,
D H Lowndes,
M H Jo,
M G Blamire
Abstract:
We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD…
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We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc.
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Submitted 2 July, 2002;
originally announced July 2002.
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Super-conducting critical fields and anisotropy of a MgB2 single crystal
Authors:
G. K. Perkins,
J. Moore,
Y. Bugoslavsky,
L. F. Cohen,
J. Jun,
S. M. Kazakov,
J. Karpinski,
A. D. Caplin
Abstract:
Despite the intense activity in the year since the discovery of superconductivity in MgB2, key parameters, in particular the upper and lower critical fields Hc2 and Hc1 and their anisotropies, are not well-established, largely because of the difficulty of growing MgB2 crystals. Attempts have been made to deduce these parameters from experiments on polycrystalline material, but they have substant…
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Despite the intense activity in the year since the discovery of superconductivity in MgB2, key parameters, in particular the upper and lower critical fields Hc2 and Hc1 and their anisotropies, are not well-established, largely because of the difficulty of growing MgB2 crystals. Attempts have been made to deduce these parameters from experiments on polycrystalline material, but they have substantial uncertainties. Hc2 is particularly important for applications, as it is the field which quenches bulk super-conductivity. In terms of understanding MgB2, it is now clear that the conventional electron-phonon interaction is strong enough to account for the high transition temperature Tc, but the consequences of the double super-conducting gap for the anisotropy and its dependence on temperature, are uncertain. Here we describe detailed direct measurements of Hc1(T) and Hc2(T) for the two principal crystallographic directions in a clean single crystal of MgB2. For fields in the c-direction, $μ_0 H^c_{c1}(0)$ = $0.28 +- 0.01T$ and $μ_0 H^c_{c2}(0)$ is $3 +- 0.5T$; this ratio of critical fields is rather low and implies that MgB2 is only just a Type II super-conductor. The anisotropies of both critical fields are close to 2.
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Submitted 7 May, 2002; v1 submitted 2 May, 2002;
originally announced May 2002.
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High Critical Current Density and Improved Irreversibility Field in Bulk MgB2 Made By A Scaleable, Nanoparticle Addition Route
Authors:
J. Wang,
Y. Bugoslavsky,
A. Berenov,
L. Cowey,
A. D. Caplin,
L. F. Cohen,
J. L. MacManus Driscoll,
L. D. Cooley,
X. Song,
D. C. Larbalestier
Abstract:
Bulk samples of MgB2 were prepared with 5, 10, and 15% wt.% Y2O3 nanoparticles added using a simple solid-state reaction route. Transmission electron microscopy (TEM) showed a fine nanostructure consisting of ~3-5 nm YB4 nanoparticles embedded within MgB2 grains of ~400 nm size. Compared to an undoped control sample, an improvement in the in-field critical current density Jc was observed, most n…
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Bulk samples of MgB2 were prepared with 5, 10, and 15% wt.% Y2O3 nanoparticles added using a simple solid-state reaction route. Transmission electron microscopy (TEM) showed a fine nanostructure consisting of ~3-5 nm YB4 nanoparticles embedded within MgB2 grains of ~400 nm size. Compared to an undoped control sample, an improvement in the in-field critical current density Jc was observed, most notably for 10% doping. At 4.2K, the lower bound Jc value was ~2x105A.cm-2 at 2T. At 20K, the corresponding value was ~8x104A.cm-2. Irreversibility fields were ~11.5 T at 4.2K and 5.5T at 20K, compared to ~4T and ~8T, respectively, for high-pressure synthesized bulk samples.
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Submitted 22 April, 2002;
originally announced April 2002.
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The structure of the superconducting gap in MgB2 from point-contact spectroscopy
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. V. Berenov,
Z. Lockman,
J. L. MacManus-Driscoll,
L. F. Cohen,
A. D. Caplin,
H. Y. Zhai,
M. P. Paranthaman,
H. M. Christen,
M. Blamire
Abstract:
We have studied the structure of the superconducting gap in MgB2 thin films by means of point-contact spectroscopy using a gold tip. The films were produced by depositing pure boron on a sapphire substrate, using e-beam evaporation, followed by reaction with magnesium vapour. The films have a Tc of 38.6 +- 0.3 K and resistivity of about 20 microOhm cm at 40 K. The point-contact spectra prove dir…
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We have studied the structure of the superconducting gap in MgB2 thin films by means of point-contact spectroscopy using a gold tip. The films were produced by depositing pure boron on a sapphire substrate, using e-beam evaporation, followed by reaction with magnesium vapour. The films have a Tc of 38.6 +- 0.3 K and resistivity of about 20 microOhm cm at 40 K. The point-contact spectra prove directly the existence of a multi-valued order parameter in MgB2, with two distinct values of the gap, DELTA1=2.3+-0.3 meV and DELTA2=6.2+-0.7 meV at 4.2 K. Analysis of the spectra in terms of the Blonder-Tinkham-Klapwijk model reveals that both gaps close simultaneously at the Tc of the film. Possible mechanisms that can explain the intrinsic co-existence of two values of the gap are discussed.
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Submitted 15 October, 2001;
originally announced October 2001.
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Microwave Power, DC Magnetic Field, Frequency and Temperature Dependence of the Surface Resistance of MgB2
Authors:
A. A. Zhukov,
A. Purnell,
Y. Miyoshi,
Y. Bugoslavsky,
Z. Lockman,
A. Berenov,
J. L. MacManus-Driscoll,
L. F. Cohen,
H. Y. Zhai,
H. M. Christen,
M. P. Paranthaman,
D. H. Lowndes,
M. H. Jo,
M. G. Blamire,
Ling Hao,
J. C. Gallop
Abstract:
The microwave power, dc magnetic field, frequency and temperature dependence of the surface resistance of MgB2 films and powder samples were studied. Sample quality is relatively easy to identify by a number of characteristics, the most clear being the breakdown in the omega squared law for poor quality samples. Analysis of the experimental data suggests the most attractive procedure for high qu…
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The microwave power, dc magnetic field, frequency and temperature dependence of the surface resistance of MgB2 films and powder samples were studied. Sample quality is relatively easy to identify by a number of characteristics, the most clear being the breakdown in the omega squared law for poor quality samples. Analysis of the experimental data suggests the most attractive procedure for high quality film growth for technical applications.
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Submitted 21 September, 2001;
originally announced September 2001.
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Temperature dependence of the microwave surface impedance measured on different kinds of MgB$_2$ samples
Authors:
A. A. Zhukov,
L. F. Cohen,
A. Purnell,
Y. Bugoslavsky,
A. Berenov,
J. L. MacManus-Driscoll,
H. Y Zhai,
Hans M. Christen,
Mariappan P. Paranthaman,
Douglas H. Lowndes,
M. A. Jo,
M. C. Blamire,
Ling Hao,
J. Gallop
Abstract:
In this paper we present the results of measurements of the microwave surface impedance of a powder sample and two films of MgB$_2$. One film has $T_c=30$ K and is not textured, the other is partially c-axis orientated with $T_c=38$ K. These samples show different types of temperature dependence of the field penetration depth: linear for the powder sample, exponential with $Δ/kT_c<1.76$ (film wi…
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In this paper we present the results of measurements of the microwave surface impedance of a powder sample and two films of MgB$_2$. One film has $T_c=30$ K and is not textured, the other is partially c-axis orientated with $T_c=38$ K. These samples show different types of temperature dependence of the field penetration depth: linear for the powder sample, exponential with $Δ/kT_c<1.76$ (film with $T_c=30$ K) and strong coupling behaviour with $Δ/kT_c\sim 2.25$ (film with $T_c=38$ K). The results are well described in terms of an anisotropic gap model or presence of a slightly deficient MgB$_2$ phase. The data set for all samples - taken as a whole cannot be fitted into a two gap scenario.
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Submitted 15 July, 2001; v1 submitted 11 July, 2001;
originally announced July 2001.
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Growth of Strongly Biaxially Aligned MgB2 Thin Films on Sapphire by Post-annealing of Amorphous Precursors
Authors:
A. Berenov,
Z. Lockman,
X. Qi,
Y. Bugoslavsky,
L. F. Cohen,
M. -H. Jo,
N. A. Stelmashenko,
V. N. Tsaneva,
M. Kambara,
N. Hari Babu,
D. A. Cardwell,
M. G. Blamire,
J. L. MacManus-Driscoll
Abstract:
MgB2 thin films were cold-grown on sapphire substrates by pulsed laser deposition (PLD), followed by post-annealing in mixed, reducing gas, Mg-rich, Zr gettered, environments. The films had Tcs in the range 29 K to 34 K, Jcs (20K, H=0) in the range 30 kA/cm2 to 300 kA/cm2, and irreversibility fields at 20 K of 4 T to 6.2 T. An inverse correlation was found between Tc and irreversibility field. T…
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MgB2 thin films were cold-grown on sapphire substrates by pulsed laser deposition (PLD), followed by post-annealing in mixed, reducing gas, Mg-rich, Zr gettered, environments. The films had Tcs in the range 29 K to 34 K, Jcs (20K, H=0) in the range 30 kA/cm2 to 300 kA/cm2, and irreversibility fields at 20 K of 4 T to 6.2 T. An inverse correlation was found between Tc and irreversibility field. The films had grain sizes of 0.1-1 micron and a strong biaxial alignment was observed in the 950C annealed film.
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Submitted 14 June, 2001;
originally announced June 2001.
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Enhancement of the high-field critical current density of superconducting MgB2 by proton irradiation
Authors:
Y. Bugoslavsky,
L. F. Cohen,
G. K. Perkins,
M. Polichetti,
T. J. Tate,
R. Gwilliam,
A. D. Caplin
Abstract:
A relatively high critical temperature, Tc, approaching 40 K, places the recently-discovered superconductor magnesium diboride (MgB2) intermediate between the families of low- and copper-oxide-based high-temperature superconductors (HTS). Supercurrent flow in MgB2 is unhindered by grain boundaries, unlike the HTS materials. Thus, long polycrystalline MgB2 conductors may be easier to fabricate, a…
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A relatively high critical temperature, Tc, approaching 40 K, places the recently-discovered superconductor magnesium diboride (MgB2) intermediate between the families of low- and copper-oxide-based high-temperature superconductors (HTS). Supercurrent flow in MgB2 is unhindered by grain boundaries, unlike the HTS materials. Thus, long polycrystalline MgB2 conductors may be easier to fabricate, and so could fill a potentially important niche of applications in the 20 to 30 K temperature range. However, one disadvantage of MgB2 is that in bulk material the critical current density, Jc, appears to drop more rapidly with increasing magnetic field than it does in the HTS phases. The magnitude and field dependence of Jc are related to the presence of structural defects that can "pin" the quantised magnetic vortices that permeate the material, and prevent them from moving under the action of the Lorentz force. Vortex studies suggest that it is the paucity of suitable defects in MgB2 that causes the rapid decay of Jc with field. Here we show that modest levels of atomic disorder, induced by proton irradiation, enhance the pinning, and so increase Jc significantly at high fields. We anticipate that chemical doping or mechanical processing should be capable of generating similar levels of disorder, and so achieve technologically-attractive performance in MgB2 by economically-viable routes.
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Submitted 3 May, 2001; v1 submitted 9 April, 2001;
originally announced April 2001.
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Microwave Surface Resistance in MgB2
Authors:
A. A. Zhukov,
K. Yates,
G. K Perkins,
Y. Bugoslavsky,
M. Polichetti,
A. Berenov,
J. Driscoll,
A. D. Caplin,
L. F. Cohen,
Ling Hao,
J. Gallop
Abstract:
Measurements of the temperature dependence of the surface resistance at 3 GHz of 100 micron size grains of MgB_2 separated powder are presented and discussed. The microwave surface resistance data is compared to experimental results of Nb, Bi_2Sr_2CaCu_2O_{8+δ} (BSCCO) and theoretical predictions of s-wave weak coupling electron-phonon theory (BCS).
Measurements of the temperature dependence of the surface resistance at 3 GHz of 100 micron size grains of MgB_2 separated powder are presented and discussed. The microwave surface resistance data is compared to experimental results of Nb, Bi_2Sr_2CaCu_2O_{8+δ} (BSCCO) and theoretical predictions of s-wave weak coupling electron-phonon theory (BCS).
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Submitted 30 March, 2001; v1 submitted 28 March, 2001;
originally announced March 2001.
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Critical currents and vortex dynamics in super-conducting MgB2
Authors:
Y. Bugoslavsky,
G. K. Perkins,
X. Qi,
L. F. Cohen,
A. D. Caplin
Abstract:
The recently-discovered MgB2 super-conductor has a transition temperature Tc approaching 40K, placing it intermediate between the families of low and high temperature super-conductors (LTS and HTS). In practical applications, super-conductors are permeated by quantised magnetic flux vortices, and when a current flows there is dissipation unless the vortices are "pinned" in some way, and so inhib…
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The recently-discovered MgB2 super-conductor has a transition temperature Tc approaching 40K, placing it intermediate between the families of low and high temperature super-conductors (LTS and HTS). In practical applications, super-conductors are permeated by quantised magnetic flux vortices, and when a current flows there is dissipation unless the vortices are "pinned" in some way, and so inhibited from moving under the influence of the Lorentz force. This vortex motion sets the limiting critical current density Jc in the super-conductor. Vortex behaviour has proved to be more complicated in the HTS than in LTS materials. While this has stimulated extensive theoretical and experimental research, it has impeded applications. Clearly it is important to explore vortex behaviour in MgB2; here we report on Jc, and also on the creep rate S, which is a measure of how fast the "persistent" currents decay. Our results show that naturally-occurring grain boundaries are highly transparent to supercurrent, and suggest that the steep decline in Jc with increasing magnetic field H reflects a weakening of the vortex pinning energy, possibly because this compound forms naturally with a high degree of crystalline perfection.
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Submitted 20 February, 2001;
originally announced February 2001.
