Showing 1–3 of 3 results for author: Buettner, B

One-dimensional weak antilocalization and band Berry phases in HgTe wires

Authors: M. Mühlbauer, A. Budewitz, B. Büttner, G. Tkachov, E. M. Hankiewicz, C. Brüne, H. Buhmann, L. W. Molenkamp

Abstract: We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affected by Rashba spin-orbit splitting and persists when the Rashba splitting is about zero. The WAL signal in wires with normal band ordering is an order… ▽ More We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affected by Rashba spin-orbit splitting and persists when the Rashba splitting is about zero. The WAL signal in wires with normal band ordering is an order of magnitude smaller than for inverted ones. These observations are attributed to a Dirac-like topology of the energy bands in HgTe QWs. From the magnetic-field and temperature dependencies we extract the dephasing lengths and band Berry phases. The weaker WAL for samples with a normal band structure can be explained by a non-universal Berry phase which always exceeds π, the characteristic value for gapless Dirac fermions. △ Less

Submitted 12 June, 2013; originally announced June 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 112, 146803, 2014

Backscattering of Dirac fermions in HgTe quantum wells with a finite gap

Authors: G. Tkachov, C. Thienel, V. Pinneker, B. Buettner, C. Bruene, H. Buhmann, L. W. Molenkamp, E. M. Hankiewicz

Abstract: The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac… ▽ More The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac fermions from random fluctuations of the band gap (Dirac mass). Our findings open new avenues for the study of Dirac fermion transport with finite and random mass, which so far has been hard to access. △ Less

Submitted 21 April, 2011; v1 submitted 29 January, 2011; originally announced January 2011.

Comments: version as published in Phys. Rev. Lett. 106, 076802 (2011)

Journal ref: Phys. Rev. Lett. 106, 076802 (2011)

Single valley Dirac fermions in zero-gap HgTe quantum wells

Authors: B. Büttner, C. X. Liu, G. Tkachov, E. G. Novik, C. Brüne, H. Buhmann, E. M. Hankiewicz, P. Recher, B. Trauzettel, S. C. Zhang, L. W. Molenkamp

Abstract: Dirac fermions have been studied intensively in condensed matter physics in recent years. Many theoretical predictions critically depend on the number of valleys where the Dirac fermions are realized. In this work, we report the discovery of a two dimensional system with a single valley Dirac cone. We study the transport properties of HgTe quantum wells grown at the critical thickness separating b… ▽ More Dirac fermions have been studied intensively in condensed matter physics in recent years. Many theoretical predictions critically depend on the number of valleys where the Dirac fermions are realized. In this work, we report the discovery of a two dimensional system with a single valley Dirac cone. We study the transport properties of HgTe quantum wells grown at the critical thickness separating between the topologically trivial and the quantum spin Hall phases. At high magnetic fields, the quantized Hall plateaus demonstrate the presence of a single valley Dirac point in this system. In addition, we clearly observe the linear dispersion of the zero mode spin levels. Also the conductivity at the Dirac point and its temperature dependence can be understood from single valley Dirac fermion physics. △ Less

Submitted 23 September, 2010; v1 submitted 12 September, 2010; originally announced September 2010.

Comments: version 2: supplementary material added

Journal ref: Nature Phys.7:418-422,2011