Showing 1–41 of 41 results for author: Buerke, A

Combined Light Excitation and Scanning Gate Microscopy on Heterostructure Nanowire Photovoltaic Devices

Authors: Yen-Po Liu, Jonatan Fast, Yang Chen, Ren Zhe, Adam Burke, Rainer Timm, Heiner Linke, Anders Mikkelsen

Abstract: Nanoscale optoelectronic components achieve functionality via spatial variation in electronic structure induced by composition, defects, and dopants. To dynamically change the local band alignment and influence defect states, a scanning gate electrode is highly useful. However, this technique is rarely combined with photoexcitation by a controlled external light source. We explore a setup that com… ▽ More Nanoscale optoelectronic components achieve functionality via spatial variation in electronic structure induced by composition, defects, and dopants. To dynamically change the local band alignment and influence defect states, a scanning gate electrode is highly useful. However, this technique is rarely combined with photoexcitation by a controlled external light source. We explore a setup that combines several types of light excitation with high resolution scanning gate and atomic force microscopy (SGM/AFM). We apply the technique to InAs nanowires with an atomic scale defined InP segment, that have attracted considerable attention for studies of hot carrier devices. Using AFM we image the topography of the nanowire device. SGM measurements without light excitation show how current profiles can be influenced by local gating near the InP segment. Modelling of the tip and nanowire can well predict the results based on the axial band structure variation and an asymmetric tip. SGM studies including light excitation are then performed using both a white light LED and laser diodes at 515 and 780nm. Both negative and positive photoconductance can be observed and the combined effect of light excitation and local gating is observed. SGM can then be used to discriminate between effects related to the wire axial compositional structure and surface states. The setup explored in the current work has significant advantages to study optoelectronics at realistic conditions and with rapid turnover. △ Less

Submitted 19 February, 2025; originally announced February 2025.

Using $k$-means to sort spectra: electronic order mapping from scanning tunneling spectroscopy measurements

Authors: V. King, Seokhwan Choi, Dong Chen, Brandon Stuart, Jisun Kim, Mohamed Oudah, Jimin Kim, B. J. Kim, D. A. Bonn, S. A. Burke

Abstract: Hyperspectral imaging techniques have a unique ability to probe the inhomogeneity of material properties whether driven by compositional variation or other forms of phase segregation. In the doped cuprates, iridates, and related materials, scanning tunneling microscopy/spectroscopy (STM/STS) measurements have found the emergence of pseudogap 'puddles' from the macroscopically Mott insulating phase… ▽ More Hyperspectral imaging techniques have a unique ability to probe the inhomogeneity of material properties whether driven by compositional variation or other forms of phase segregation. In the doped cuprates, iridates, and related materials, scanning tunneling microscopy/spectroscopy (STM/STS) measurements have found the emergence of pseudogap 'puddles' from the macroscopically Mott insulating phase with increased doping. However, categorizing this hyperspectral data by electronic order is not trivial, and has often been done with ad hoc methods. In this paper we demonstrate the utility of $k$-means, a simple and easy-to-use unsupervised clustering method, as a tool for classifying heterogeneous scanning tunneling spectroscopy data by electronic order for Rh-doped Sr$_2$IrO$_{4}$, a cuprate-like material. Applied to STM data acquired within the Mott phase, $k$-means successfully identified areas of Mott order and of pseudogap order. The unsupervised nature of $k$-means limits avenues for bias, and provides clustered spectral shapes without a priori knowledge of the physics. Additionally, we demonstrate successful use of $k$-means as a preprocessing tool to constrain phenomenological function fitting. Clustering the data allows us to reduce the fitting parameter space, limiting over-fitting. We suggest $k$-means as a fast, simple model for processing hyperspectral data on materials of mixed electronic order. △ Less

Submitted 12 August, 2024; originally announced August 2024.

Comments: 6 pages, 4 figures

Two-stage growth for highly ordered epitaxial C$_{60}$ films on Au(111)

Authors: Alexandra B. Tully, Rysa Greenwood, MengXing Na, Vanessa King, Erik Mårsell, Yuran Niu, Evangelos Golias, Arthur K. Mills, Giorgio Levy de Castro, Matteo Michiardi, Darius Menezes, Jiabin Yu, Sergey Zhdanovich, Andrea Damascelli, David J. Jones, Sarah A. Burke

Abstract: As an organic semiconductor and a prototypical acceptor molecule in organic photovoltaics, C$_{60}$ has broad relevance to the world of organic thin film electronics. Although highly uniform C$_{60}$ thin films are necessary to conduct spectroscopic analysis of the electronic structure of these C$_{60}$-based materials, reported C$_{60}$ films show a relatively low degree of order beyond a monolay… ▽ More As an organic semiconductor and a prototypical acceptor molecule in organic photovoltaics, C$_{60}$ has broad relevance to the world of organic thin film electronics. Although highly uniform C$_{60}$ thin films are necessary to conduct spectroscopic analysis of the electronic structure of these C$_{60}$-based materials, reported C$_{60}$ films show a relatively low degree of order beyond a monolayer. Here, we develop a generalizable two-stage growth technique that consistently produces single-domain C$_{60}$ films of controllable thicknesses, using Au(111) as an epitaxially well-matched substrate. We characterize the films using low-energy electron diffraction, low-energy electron microscopy, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). We report highly oriented epitaxial film growth of C$_{60}$/Au(111) from 1 monolayer (ML) up to 20 ML films. The high-quality of the C$_{60}$ thin films enables the direct observation of the electronic dispersion of the HOMO and HOMO-1 bands via ARPES without need for small spot sizes. Our results indicate a path for the growth of organic films on metallic substrates with long-range ordering. △ Less

Submitted 15 April, 2024; originally announced April 2024.

Comments: 16 pages, 7 figures

Designing optoelectronic properties by on-surface synthesis: formation and electronic structure of an iron-terpyridine macromolecular complex

Authors: Agustin Schiffrin, Martina Capsoni, Gelareh Farahi, Chen-Guang Wang, Cornelius Krull, Marina Castelli, Tanya S. Roussy, Katherine A. Cochrane, Yuefeng Yin, Nikhil Medhekar, Adam Q. Shaw, Wei Ji, Sarah A. Burke

Abstract: Supramolecular chemistry protocols applied on surfaces offer compelling avenues for atomic scale control over organic-inorganic interface structures. In this approach, adsorbate-surface interactions and two-dimensional confinement can lead to morphologies and properties that differ dramatically from those achieved via conventional synthetic approaches. Here, we describe the bottom-up, on-surface s… ▽ More Supramolecular chemistry protocols applied on surfaces offer compelling avenues for atomic scale control over organic-inorganic interface structures. In this approach, adsorbate-surface interactions and two-dimensional confinement can lead to morphologies and properties that differ dramatically from those achieved via conventional synthetic approaches. Here, we describe the bottom-up, on-surface synthesis of one-dimensional coordination nanostructures based on an iron (Fe)-terpyridine (tpy) interaction borrowed from functional metal-organic complexes used in photovoltaic and catalytic applications. Thermally activated diffusion of sequentially deposited ligands and metal atoms, and intra-ligand conformational changes, lead to Fe-tpy coordination and formation of these nanochains. Low-temperature Scanning Tunneling Microscopy and Density Functional Theory were used to elucidate the atomic-scale morphology of the system, providing evidence of a linear tri-Fe linkage between facing, coplanar tpy groups. Scanning Tunneling Spectroscopy reveals highest occupied orbitals with dominant contributions from states located at the Fe node, and ligand states that mostly contribute to the lowest unoccupied orbitals. This electronic structure yields potential for hosting photo-induced metal-to-ligand charge transfer in the visible/near-infrared. The formation of this unusual tpy/tri-Fe/tpy coordination motif has not been observed for wet chemistry synthesis methods, and is mediated by the bottom-up on-surface approach used here. △ Less

Submitted 8 August, 2023; originally announced August 2023.

Geometric symmetry breaking and nonlinearity can increase thermoelectric power

Authors: Jonatan Fast, Hanna Lundström, Sven Dorsch, Lars Samuelson, Adam Burke, Peter Samuelsson, Heiner Linke

Abstract: Direct thermal-to-electric energy converters typically operate in the linear regime, where the ratio of actual maximum power relative to the ideal maximum power, the so-called fill factor (FF), is 0.25. By increasing the FF one can potentially increase maximum power by up to four times, but this is only possible in the nonlinear regime of transport and has previously rarely been considered. Here w… ▽ More Direct thermal-to-electric energy converters typically operate in the linear regime, where the ratio of actual maximum power relative to the ideal maximum power, the so-called fill factor (FF), is 0.25. By increasing the FF one can potentially increase maximum power by up to four times, but this is only possible in the nonlinear regime of transport and has previously rarely been considered. Here we show, based on fundamental symmetry considerations, that the leading order non-linear terms that can increase the FF require devices with broken spatial symmetry. To experimentally demonstrate such a system, we study nonlinear, thermoelectric transport across an asymmetric energy barrier epitaxially defined in a single semiconductor nanowire. We find in both experiment and theory that we can increase the FF above the linear-response limit of 0.25, accompanied by a drastic increase in short circuit current, open-circuit voltage and maximum power. Our results show that geometric symmetry breaking combined with the design of nonlinear behaviour represent a design strategy for increasing the performance of thermal-to-electric energy converters such as in hot-carrier photovoltaics, thermophotovoltaics or in anisotropic thermoelectric materials. △ Less

Submitted 4 April, 2023; originally announced April 2023.

Comments: 11 pages, 3 figures. Submitted to Nature Physics

Selective Hybridization of a Terpyridine-Based Molecule with a Noble Metal

Authors: M. Capsoni, A. Schiffrin, K. A. Cochrane, C. -G. Wang, T. Roussy, A. Q. Shaw, W. Ji, S. A. Burke

Abstract: The electronic properties of metal-molecule interfaces can in principle be controlled by molecular design and self-assembly, yielding great potential for future nano- and optoelectronic technologies. However, the coupling between molecular orbitals and the electronic states of the surface can significantly influence molecular states. In particular, molecules designed to create metal-organic self-a… ▽ More The electronic properties of metal-molecule interfaces can in principle be controlled by molecular design and self-assembly, yielding great potential for future nano- and optoelectronic technologies. However, the coupling between molecular orbitals and the electronic states of the surface can significantly influence molecular states. In particular, molecules designed to create metal-organic self-assembled networks have functional groups that by necessity are designed to interact strongly with metals. Here, we investigate the adsorption interactions of a terpyridine (tpy)-based molecule on a noble metal, Ag(111), by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS) together with density functional theory (DFT) calculations. By comparing the local density of states (DOS) information gained from STS for the molecule on the bare Ag(111) surface with that of the molecule decoupled from the underlying metal by a NaCl bilayer, we find that tpy-localized orbitals hybridize strongly with the metal substrate. Meanwhile, those related to the phenyl rings that link the two terminal tpy groups are less influenced by the interaction with the surface. The selective hybridization of the tpy groups provides an example of strong, orbital-specific electronic coupling between a functional group and a noble-metal surface, which may alter the intended balance of interactions and resulting electronic behavior of the molecule-metal interface. △ Less

Submitted 28 March, 2023; originally announced March 2023.

Journal ref: J. Phys. Chem. C 2017, 121, 42, 23574-23581

Molecularly Resolved Electronic Landscapes of Differing Acceptor-Donor Interface Geometries

Authors: Katherine A. Cochrane, Tanya S. Roussy, Bingkai Yuan, Gary Tom, Erik Mårsell, Sarah A. Burke

Abstract: Organic semiconductors are a promising class of materials for numerous electronic and optoelectronic applications, including solar cells. However, these materials tend to be extremely sensitive to the local environment and surrounding molecular geometry, causing the energy levels near boundaries and interfaces essential to device function to differ from those of the bulk. Scanning Tunneling Micros… ▽ More Organic semiconductors are a promising class of materials for numerous electronic and optoelectronic applications, including solar cells. However, these materials tend to be extremely sensitive to the local environment and surrounding molecular geometry, causing the energy levels near boundaries and interfaces essential to device function to differ from those of the bulk. Scanning Tunneling Microscopy and Spectroscopy (STM/STS) has the ability to examine both the structural and electronic properties of these interfaces on the molecular and submolecular scale. Here we investigate the prototypical acceptor/donor system PTCDA/CuPc using sub-molecularly resolved pixel-by-pixel STS to demonstrate the importance of subtle changes in interface geometry in prototypical solar cell materials. PTCDA and CuPc were sequentially deposited on NaCl bilayers to create lateral heterojunctions that were decoupled from the underlying substrate. Donor and acceptor states were observed to shift in opposite directions suggesting an equilibrium charge transfer between the two. Narrowing of the gap energy compared to isolated molecules on the same surface are indicative of the influence of the local dielectric environment. Further, we find that the electronic state energies of both acceptor and donor are strongly dependent on the ratio and positioning of both molecules in larger clusters. This molecular-scale structural dependence of the electronic states of both interfacial acceptor and donor has significant implications for device design where level alignment strongly correlates to device performance. △ Less

Submitted 28 March, 2023; originally announced March 2023.

Journal ref: J. Phys. Chem. C 2018, 122, 15, 8437-8444

Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices

Authors: Sven Dorsch, In-Pyo Yeo, Sebastian Lehmann, Kimberly Dick, Claes Thelander, Adam Burke

Abstract: Proposals for quantum information applications are frequently based on the coherent manipulation of spins confined to quantum dots. For these applications, p-type III-V material systems promise a reduction of the hyperfine interaction while maintaining large $g$-factors and strong spin-orbit interaction. In this work, we study bottom-gated device architectures to realize single and serial multi-qu… ▽ More Proposals for quantum information applications are frequently based on the coherent manipulation of spins confined to quantum dots. For these applications, p-type III-V material systems promise a reduction of the hyperfine interaction while maintaining large $g$-factors and strong spin-orbit interaction. In this work, we study bottom-gated device architectures to realize single and serial multi-quantum dot systems in Schottky contacted p-type GaSb nanowires. We find that the effect of potentials applied to gate electrodes on the nanowire is highly localized to the immediate vicinity of the gate electrode only, which prevents the formation of double quantum dots with commonly used device architectures. We further study the transport properties of a single quantum dot induced by bottom-gating, find large gate-voltage dependent variations of the $g^*$-factors up to $8.1\pm 0.2$ as well as spin-orbit energies between $110$-$230\,μ$eV. △ Less

Submitted 29 March, 2021; originally announced March 2021.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 103, 241411 (2021)

Quasiparticle interference observation of the topologically non-trivial drumhead surface state in ZrSiTe

Authors: B. A. Stuart, Seokhwan Choi, Jisun Kim, Lukas Muechler, Raquel Queiroz, Mohamed Oudah, L. M. Schoop, D. A. Bonn, S. A. Burke

Abstract: Drumhead surface states that link together loops of nodal lines arise in Dirac nodal-line semimetals as a consequence of the topologically non-trivial band crossings. We used low-temperature scanning tunneling microscopy and Fourier-transformed scanning tunneling spectroscopy to investigate the quasiparticle interference (QPI) properties of ZrSiTe. Our results show two scattering signals across th… ▽ More Drumhead surface states that link together loops of nodal lines arise in Dirac nodal-line semimetals as a consequence of the topologically non-trivial band crossings. We used low-temperature scanning tunneling microscopy and Fourier-transformed scanning tunneling spectroscopy to investigate the quasiparticle interference (QPI) properties of ZrSiTe. Our results show two scattering signals across the drumhead state resolving the energy-momentum relationship through the occupied and unoccupied energy ranges it is predicted to span. Observation of this drumhead state is in contrast to previous studies on ZrSiS and ZrSiSe, where the QPI was dominated by topologically trivial bulk bands and surface states. Furthermore, we observe a near $\mathbf{k} \rightarrow -\mathbf{k}$ scattering process across the $Γ$-point, enabled by scattering between the spin-split drumhead bands in this material. △ Less

Submitted 18 February, 2022; v1 submitted 30 September, 2020; originally announced October 2020.

Comments: 7 pages, 3 figures

Hot-Carrier Separation in Heterostructure Nanowires observed by Electron-Beam Induced Current

Authors: Jonatan Fast, Enrique Barrigon, Mukesh Kumar, Yang Chen, Lars Samuelson, Magnus Borgström, Anders Gustafsson, Steven Limpert, Adam Burke, Heiner Linke

Abstract: The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier separation such as: a high degree of control and flexibility in heterostructure-based band engineering, increased hot-carrier temperatures compared to bulk, and… ▽ More The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier separation such as: a high degree of control and flexibility in heterostructure-based band engineering, increased hot-carrier temperatures compared to bulk, and a geometry well suited for local control of light absorption. Indeed, InAs nanowires with a short InP energy barrier have been observed to produce electric power under global illumination, with an open-circuit voltage exceeding the Shockley-Queisser limit. To understand this behaviour in more detail, it is necessary to maintain control over the precise location of electron-hole pair-generation in the nanowire. In this work we perform electron-beam induced current measurements with high spatial resolution, and demonstrate the role of the InP barrier in extracting energetic electrons. We interprete the results in terms of hot-carrier separation, and extract estimates of the hot carrier mean free path. △ Less

Submitted 3 April, 2020; originally announced April 2020.

Heat driven transport in serial double quantum dot devices

Authors: Sven Dorsch, Artis Svilans, Martin Josefsson, Bahareh Goldozian, Mukesh Kumar, Claes Thelander, Andreas Wacker, Adam Burke

Abstract: Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation of fundamental thermodynamic concepts and the realization of thermal energy harvesters. We study a serial double quantum dot formed in an InAs/InP nanowire coupled to two electron reservoirs. By means of a specially designed local metallic joule-… ▽ More Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation of fundamental thermodynamic concepts and the realization of thermal energy harvesters. We study a serial double quantum dot formed in an InAs/InP nanowire coupled to two electron reservoirs. By means of a specially designed local metallic joule-heater, the temperature of the phonon bath in the vicinity of the double quantum dot can be enhanced. This results in phonon-assisted transport, enabling the conversion of local heat into electrical power in a nano-sized heat engine. Simultaneously, the electron temperatures of the reservoirs are affected, resulting in conventional thermoelectric transport. By detailed modelling and experimentally tuning the interdot coupling we disentangle both effects. Furthermore, we show that phonon-assisted transport gives access to the energy of excited states. Our findings demonstrate the versatility of our design to study fluctuations and fundamental nanothermodynamics. △ Less

Submitted 6 October, 2020; v1 submitted 25 March, 2020; originally announced March 2020.

Comments: 11 pages, 4 figures + SI

Journal ref: Nano Lett. 21 (2021) 988-994

Selective tuning of spin-orbital Kondo contributions in parallel-coupled quantum dots

Authors: Heidi Potts, Martin Leijnse, Adam Burke, Malin Nilsson, Sebastian Lehmann, Kimberly A. Dick, Claes Thelander

Abstract: We use co-tunneling spectroscopy to investigate spin-, orbital-, and spin-orbital Kondo transport in a strongly confined system of InAs double quantum dots (QDs) parallel-coupled to source and drain. In the one-electron transport regime, the higher symmetry spin-orbital Kondo effect manifests at orbital degeneracy and no external magnetic field. We then proceed to show that the individual Kondo co… ▽ More We use co-tunneling spectroscopy to investigate spin-, orbital-, and spin-orbital Kondo transport in a strongly confined system of InAs double quantum dots (QDs) parallel-coupled to source and drain. In the one-electron transport regime, the higher symmetry spin-orbital Kondo effect manifests at orbital degeneracy and no external magnetic field. We then proceed to show that the individual Kondo contributions can be isolated and studied separately; either by orbital detuning in the case of spin-Kondo transport, or by spin splitting in the case of orbital Kondo transport. By varying the inter-dot tunnel coupling, we show that lifting of the spin degeneracy is key to confirming the presence of an orbital degeneracy, and to detecting a small orbital hybridization gap. Finally, in the two-electron regime, we show that the presence of a spin-triplet ground state results in spin-Kondo transport at zero magnetic field. △ Less

Submitted 17 March, 2020; v1 submitted 11 December, 2019; originally announced December 2019.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 101, 115429 (2020)

Room temperature strain-induced Landau levels in graphene on a wafer-scale platform

Authors: P. Nigge, A. C. Qu, É. Lantagne-Hurtubise, E. Mårsell, S. Link, G. Tom, M. Zonno, M. Michiardi, M. Schneider, S. Zhdanovich, G. Levy, U. Starke, C. Gutiérrez, D. Bonn, S. A. Burke, M. Franz, A. Damascelli

Abstract: Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transpor… ▽ More Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T. This enables the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications. △ Less

Submitted 22 November, 2019; v1 submitted 1 February, 2019; originally announced February 2019.

Comments: Revised version as published in Science Advances

Journal ref: Science Advances 5, eaaw5593 (2019)

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Authors: J. G. Gluschke, J. Seidl, A. M. Burke, R. W. Lyttleton, D. J. Carrad, A. R. Ullah, S. Fahlvik Svensson, S. Lehmann, H. Linke, A. P. Micolich

Abstract: We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control… ▽ More We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length. △ Less

Submitted 8 October, 2018; originally announced October 2018.

Comments: Submitted to Nanotechnology

Spectroscopy and level detuning of few-electron spin states in parallel InAs quantum dots

Authors: Claes Thelander, Malin Nilsson, Florinda Viñas Boström, Adam Burke, Sebastian Lehmann, Kimberly A. Dick, Martin Leijnse

Abstract: We use tunneling spectroscopy to study the evolution of few-electron spin states in parallel InAs nanowire double quantum dots (QDs) as a function of level detuning and applied magnetic field. Compared to the much more studied serial configuration, parallel coupling of the QDs to source and drain greatly expands the probing range of excited state transport. Owing to a strong confinement, we can he… ▽ More We use tunneling spectroscopy to study the evolution of few-electron spin states in parallel InAs nanowire double quantum dots (QDs) as a function of level detuning and applied magnetic field. Compared to the much more studied serial configuration, parallel coupling of the QDs to source and drain greatly expands the probing range of excited state transport. Owing to a strong confinement, we can here isolate transport involving only the very first interacting single QD orbital pair. For the (2,0)-(1,1) charge transition, with relevance for spin-based qubits, we investigate the excited (1,1) triplet, and hybridization of the (2,0) and (1,1) singlets. An applied magnetic field splits the (1,1) triplet, and due to spin-orbit induced mixing with the (2,0) singlet, we clearly resolve transport through all triplet states near the avoided singlet-triplet crossings. Transport calculations, based on a simple model with one orbital on each QD, fully replicate the experimental data. Finally, we observe an expected mirrored symmetry between the 1-2 and 2-3 electron transitions resulting from the two-fold spin degeneracy of the orbitals. △ Less

Submitted 20 August, 2018; originally announced August 2018.

Comments: 17 pages, 8 figures

Journal ref: Phys. Rev. B 98, 245305 (2018)

Thermoelectric characterization of the Kondo resonance in nanowire quantum dots

Authors: Artis Svilans, Martin Josefsson, Adam M. Burke, Sofia Fahlvik, Claes Thelander, Heiner Linke, Martin Leijnse

Abstract: We experimentally verify hitherto untested theoretical predictions about the thermoelectric properties of Kondo correlated quantum dots (QDs). The specific conditions required for this study are obtained by using QDs epitaxially grown in nanowires, combined with a recently developed method for controlling and measuring temperature differences at the nanoscale. This makes it possible to obtain data… ▽ More We experimentally verify hitherto untested theoretical predictions about the thermoelectric properties of Kondo correlated quantum dots (QDs). The specific conditions required for this study are obtained by using QDs epitaxially grown in nanowires, combined with a recently developed method for controlling and measuring temperature differences at the nanoscale. This makes it possible to obtain data of very high quality both below and above the Kondo temperature, and allows a quantitative comparison with theoretical predictions. Specifically, we verify that Kondo correlations can induce a polarity change of the thermoelectric current, which can be reversed either by increasing the temperature or by applying a magnetic field. △ Less

Submitted 20 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. Lett. 121, 206801 (2018)

Determination of the Superconducting Order Parameter from Defect Bound State Quasiparticle Interference

Authors: Shun Chi, W. N. Hardy, Ruixing Liang, P. Dosanjh, Peter Wahl, S. A. Burke, D. A. Bonn

Abstract: The superconducting order parameter is directly related to the pairing interaction, with the amplitude determined by the interaction strength, while the phase reflects the spatial structure of the interaction. However, given the large variety of materials and their rich physical properties within the iron-based high-Tc superconductors, the structure of the order parameter remains controversial in… ▽ More The superconducting order parameter is directly related to the pairing interaction, with the amplitude determined by the interaction strength, while the phase reflects the spatial structure of the interaction. However, given the large variety of materials and their rich physical properties within the iron-based high-Tc superconductors, the structure of the order parameter remains controversial in many cases. Here, we introduce Defect Bound State Quasi Particle Interference (DBS-QPI) as a new method to determine the superconducting order parameter. Using a low-temperature scanning tunneling microscope, we image in-gap bound states in the stoichiometric iron-based superconductor LiFeAs and show that the bound states induced by defect scattering are formed from Bogoliubov quasiparticles that have significant spatial extent. Quasiparticle interference from these bound states has unique signatures from which one can determine the phase of the order parameter as well as the nature of the defect, i.e. whether it is better described as a magnetic vs a nonmagnetic scatterer. DBS-QPI provides an easy but general method to characterize the pairing symmetry of superconducting condensates. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Extracting phase information about the superconducting order parameter from defect bound states

Authors: Shun Chi, W. N. Hardy, Ruixing Liang, P. Dosanjh, Peter Wahl, S. A. Burke, D. A. Bonn

Abstract: Impurity bound states and quasi-particle scattering from these can serve as sensitive probes for identifying the pairing state of a superconducting condensate. We introduce and discuss defect bound state quasi-particle interference (DBS-QPI) imaging as a tool to extract information about the symmetry of the order parameter from spatial maps of the density of states around magnetic and non-magnetic… ▽ More Impurity bound states and quasi-particle scattering from these can serve as sensitive probes for identifying the pairing state of a superconducting condensate. We introduce and discuss defect bound state quasi-particle interference (DBS-QPI) imaging as a tool to extract information about the symmetry of the order parameter from spatial maps of the density of states around magnetic and non-magnetic impurities. We show that the phase information contained in the scattering patterns around impurities can provide valuable information beyond what is obtained through conventional QPI imaging. Keeping track of phase, rather than just magnitudes, in the Fourier transforms is achieved through phase-referenced Fourier transforms that preserve both real and imaginary parts of the QPI images. We further compare DBS-QPI to other approaches which have been proposed to use either QPI or defect scattering to distinguish different symmetries of the order parameter. △ Less

Submitted 25 October, 2017; originally announced October 2017.

A quantum-dot heat engine operating close to the thermodynamic efficiency limits

Authors: Martin Josefsson, Artis Svilans, Adam M. Burke, Eric A. Hoffmann, Sofia Fahlvik, Claes Thelander, Martin Leijnse, Heiner Linke

Abstract: Cyclical heat engines are a paradigm of classical thermodynamics, but are impractical for miniaturization because they rely on moving parts. A more recent concept is particle-exchange (PE) heat engines, which uses energy filtering to control a thermally driven particle flow between two heat reservoirs. As they do not require moving parts and can be realized in solid-state materials, they are suita… ▽ More Cyclical heat engines are a paradigm of classical thermodynamics, but are impractical for miniaturization because they rely on moving parts. A more recent concept is particle-exchange (PE) heat engines, which uses energy filtering to control a thermally driven particle flow between two heat reservoirs. As they do not require moving parts and can be realized in solid-state materials, they are suitable for low-power applications and miniaturization. It was predicted that PE engines could reach the same thermodynamically ideal efficiency limits as those accessible to cyclical engines, but this prediction has not been verified experimentally. Here, we demonstrate a PE heat engine based on a quantum dot (QD) embedded into a semiconductor nanowire. We directly measure the engine's steady-state electric power output and combine it with the calculated electronic heat flow to determine the electronic efficiency $η$. We find that at the maximum power conditions, $η$ is in agreement with the Curzon-Ahlborn efficiency and that the overall maximum $η$ is in excess of 70$\%$ of the Carnot efficiency while maintaining a finite power output. Our results demonstrate that thermoelectric power conversion can, in principle, be achieved close to the thermodynamic limits, with direct relevance for future hot-carrier photovoltaics, on-chip coolers or energy harvesters for quantum technologies. △ Less

Submitted 17 July, 2018; v1 submitted 2 October, 2017; originally announced October 2017.

Journal ref: Nature Nanotechnology 13, 920-924 (2018)

Thermoelectric power factor limit of a 1D nanowire

Authors: I-Ju Chen, Adam Burke, Artis Svilans, Heiner Linke, Claes Thelander

Abstract: In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effect in practice. Here we point out that there is an upper limit to the thermoelectric power factor of non-ballistic 1D nanowires, as a consequence of the recently est… ▽ More In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effect in practice. Here we point out that there is an upper limit to the thermoelectric power factor of non-ballistic 1D nanowires, as a consequence of the recently established quantum bound of thermoelectric power output. We experimentally test this limit in quasi-ballistic InAs nanowires by extracting the maximum power factor of the first 1D subband through I-V characterization, finding that the measured maximum power factors conform to the theoretical limit. The established limit predicts that a competitive power factor, on the order of mW/m-K^2, can be achieved by a single 1D electronic channel in state-of-the-art semiconductor nanowires with small cross-section and high crystal quality. △ Less

Submitted 29 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. Lett. 120, 177703 (2018)

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

Authors: Steven Limpert, Adam Burke, I-Ju Chen, Nicklas Anttu, Sebastian Lehmann, Sofia Fahlvik, Stephen Bremner, Gavin Conibeer, Claes Thelander, Mats-Erik Pistol, Heiner Linke

Abstract: Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where… ▽ More Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells. △ Less

Submitted 16 August, 2017; originally announced August 2017.

Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry

Authors: D. J. Carrad, A. B. Mostert, A. R. Ullah, A. M. Burke, H. J. Joyce, H. H. Tan, C. Jagadish, P. Krogstrup, J. Nygård, P. Meredith, A. P. Micolich

Abstract: A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic poly… ▽ More A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic polymers, gels or electrolytes. Here we demonstrate a new class of organic-inorganic transducing interface featuring semiconducting nanowires electrostatically gated using a solid proton-transporting hygroscopic polymer. This model platform allows us to study the basic transducing mechanisms as well as deliver high fidelity signal conversion by tapping into and drawing together the best candidates from traditionally disparate realms of electronic materials research. By combining complementary n- and p-type transducers we demonstrate functional logic with significant potential for scaling towards high-density integrated bioelectronic circuitry. △ Less

Submitted 29 April, 2017; originally announced May 2017.

Journal ref: Nano Letters 17, 827-833 (2017)

Imaging the Real Space Structure of the Spin Fluctuations in an Iron-based superconductor

Authors: Shun Chi, Ramakrishna Aluru, Stephanie Grothe, A. Kreisel, Udai Raj Singh, Brian M. Andersen, W. N. Hardy, Ruixing Liang, D. A. Bonn, S. A. Burke, Peter Wahl

Abstract: Spin fluctuations are a leading candidate for the pairing mechanism in high temperature superconductors, supported by the common appearance of a distinct resonance in the spin susceptibility across the cuprates, iron-based superconductors and many heavy fermion materials. The information we have about the spin resonance comes almost exclusively from neutron scattering. Here we demonstrate that by… ▽ More Spin fluctuations are a leading candidate for the pairing mechanism in high temperature superconductors, supported by the common appearance of a distinct resonance in the spin susceptibility across the cuprates, iron-based superconductors and many heavy fermion materials. The information we have about the spin resonance comes almost exclusively from neutron scattering. Here we demonstrate that by using low-temperature scanning tunnelling microscopy and spectroscopy we can characterize the spin resonance in real space. We show that inelastic tunnelling leads to the characteristic dip-hump feature seen in tunnelling spectra in high temperature superconductors and that this feature arises from excitations of the spin fluctuations. Spatial mapping of this feature near defects allows us to probe non-local properties of the spin susceptibility and to image its real space structure. △ Less

Submitted 29 June, 2017; v1 submitted 20 March, 2017; originally announced March 2017.

Comments: published version (7 pages, 5 figures)

Report number: NBI CMT 2017

Journal ref: Nat. Commun. 8, 15996 (2017)

Dispersing artifacts in FT-STS: a comparison of set point effects across acquisition modes

Authors: A J Macdonald, Y-S Tremblay-Johnston, S Grothe, S Chi, P Dosanjh, S Johnston, S A Burke

Abstract: Fourier transform scanning tunneling spectroscopy (FT-STS), or quasiparticle interference (QPI), has become an influential tool for the study of a wide range of important materials in condensed matter physics. However, FT-STS in complex materials is often challenging to interpret, requiring significant theoretical input in many cases, making it crucial to understand potential artifacts of the meas… ▽ More Fourier transform scanning tunneling spectroscopy (FT-STS), or quasiparticle interference (QPI), has become an influential tool for the study of a wide range of important materials in condensed matter physics. However, FT-STS in complex materials is often challenging to interpret, requiring significant theoretical input in many cases, making it crucial to understand potential artifacts of the measurement. Here, we compare the most common modes of acquiring FT-STS data and show through both experiment and simulations that artifact features can arise that depend on how the tip height is stabilized throughout the course of the measurement. The most dramatic effect occurs when a series of dI/dV maps at different energies are acquired with simultaneous constant current feedback; here a feature that disperses in energy appears that is not observed in other measurement modes. Such artifact features are similar to those arising from real physical processes in the sample and are susceptible to misinterpretation. △ Less

Submitted 3 August, 2016; v1 submitted 23 June, 2016; originally announced June 2016.

Comments: 8 pages, 6 figures

Nonlinear thermoelectric response due to energy-dependent transport properties of a quantum dot

Authors: Artis Svilans, Adam M. Burke, Sofia Fahlvik Svensson, Martin Leijnse, Heiner Linke

Abstract: Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been cha… ▽ More Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been challenging to observe because, first, it is experimentally difficult to apply a sufficiently large thermal bias at the nanoscale and, second, it is difficult to distinguish thermal bias effects from purely temperature-dependent effects due to overall heating of a device. Here we take advantage of a novel thermal biasing technique and demonstrate a nonlinear thermoelectric response in a quantum dot which is defined in a heterostructured semiconductor nanowire. We also show that a theoretical model based on the Master equations fully explains the observed nonlinear thermoelectric response given the energy-dependent transport properties of the quantum dot. △ Less

Submitted 28 October, 2015; originally announced October 2015.

Comments: Cite as: A. Svilans, et al., Physica E (2015), http://dx.doi.org/10.1016/j.physe.2015.10.007

Journal ref: Physica E 82 (2015) 34-38

InAs nanowire transistors with multiple, independent wrap-gate segments

Authors: A. M. Burke, D. J. Carrad, J. G. Gluschke, K. Storm, S. Fahlvik Svensson, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabri… ▽ More We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: 18 pages, 5 figures, In press for Nano Letters (DOI below)

Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics

Authors: Sofia Fahlvik Svensson, Adam M. Burke, Damon J. Carrad, Martin Leijnse, Heiner Linke, Adam P. Micolich

Abstract: We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and… ▽ More We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and thermovoltage measurements with modeling. Our results demonstrate that local polymer electrolyte gates are compatible with nanowire thermoelectrics, where they offer the advantage of a very low thermal conductivity, and hold great potential towards setting the optimal operating point for solid-state cooling applications. △ Less

Submitted 11 November, 2014; originally announced November 2014.

Comments: Published in Advanced Functional Materials. Includes colour versions of figures and supplementary information

Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

Authors: Wei Li, A. Glen Birdwell, Matin Amani, Robert A. Burke, Xi Ling, Yi-Hsien Lee, Xuelei Liang, Lianmao Peng, Curt A. Richter, Jing Kong, David J. Gundlach, N. V. Nguyen

Abstract: Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a… ▽ More Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation. A very strong optical critical point predicted to correspond to a quasi-particle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and gama points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at ~ 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurred in bulk semiconductors, is associated with a combination of several critical points.These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general, and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations. △ Less

Submitted 25 July, 2014; originally announced July 2014.

Comments: 6 figures

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Authors: D. J. Carrad, A. M. Burke, R. W. Lyttleton, H. J. Joyce, H. H. Tan, C. Jagadish, K. Storm, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces… ▽ More We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. △ Less

Submitted 7 April, 2014; originally announced April 2014.

Comments: 20 pages, 4 figures. Supplementary information available at Nano Letters or by contact with APM

Journal ref: Nano Letters 14, 94 (2014)

Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot

Authors: D. J. Carrad, A. M. Burke, O. Klochan, A. M. See, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si accept… ▽ More We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si acceptors in p-type AlGaAs/GaAs heterostructures. In particular, we use a surface gate to cause charge migration between Si acceptor sites at T = 40 mK, and detect the ensuing changes in the disorder potential using the MCF. We show that Si acceptors are metastable at T = 40 mK and that raising the device to a temperature T = 4.2 K and returning to T = 40 mK is sufficient to produce complete decorrelation of the MCF. The same decorrelation occurs at T ~ 165 K for electron quantum dots; by comparing with the known trap energy for Si DX centers, we estimate that the shallow acceptor traps in our heterostructures have an activation energy EA ~ 3 meV. Our method can be used to study charge noise and dopant stability towards optimisation of semiconductor materials and devices. △ Less

Submitted 7 April, 2014; v1 submitted 5 December, 2013; originally announced December 2013.

Sign inversion in the superconducting order parameter of LiFeAs inferred from Bogoliubov quasiparticle interference

Authors: Shun Chi, S. Johnston, G. Levy, S. Grothe, R. Szedlak, B. Ludbrook, Ruixing Liang, P. Dosanjh, S. A. Burke, A. Damascelli, D. A. Bonn, W. N. Hardy, Y. Pennec

Abstract: Quasiparticle interference (QPI) by means of scanning tunneling microscopy/spectroscopy (STM/STS), angle resolved photoemission spectroscopy (ARPES), and multi-orbital tight bind- ing calculations are used to investigate the band structure and superconducting order parameter of LiFeAs. Using this combination we identify intra- and interband scattering vectors between the hole (h) and electron (e)… ▽ More Quasiparticle interference (QPI) by means of scanning tunneling microscopy/spectroscopy (STM/STS), angle resolved photoemission spectroscopy (ARPES), and multi-orbital tight bind- ing calculations are used to investigate the band structure and superconducting order parameter of LiFeAs. Using this combination we identify intra- and interband scattering vectors between the hole (h) and electron (e) bands in the QPI maps. Discrepancies in the band dispersions inferred from previous ARPES and STM/STS are reconciled by recognizing a difference in the $k_z$ sensitivity for the two probes. The observation of both h-h and e-h scattering is exploited using phase-sensitive scattering selection rules for Bogoliubov quasiparticles. From this we infer an s$_\pm$ gap structure, where a sign change occurs in the superconducting order parameter between the e and h bands. △ Less

Submitted 14 March, 2014; v1 submitted 20 August, 2013; originally announced August 2013.

Comments: Replaced previous version after the paper was accepted for publication in PRB

Journal ref: Phys. Rev. B 89, 104522 (2014)

Quantifying many-body effects by high-resolution Fourier transform scanning tunneling spectroscopy

Authors: S. Grothe, S. Johnston, Shun Chi, P. Dosanjh, S. A. Burke, Y. Pennec

Abstract: Many-body phenomena are ubiquitous in solids, as electrons interact with one another and the many excitations arising from lattice, magnetic, and electronic degrees of freedom. These interactions can subtly influence the electronic properties of materials ranging from metals, exotic materials such as graphene, and topological insulators, or they can induce new phases of matter, as in conventional… ▽ More Many-body phenomena are ubiquitous in solids, as electrons interact with one another and the many excitations arising from lattice, magnetic, and electronic degrees of freedom. These interactions can subtly influence the electronic properties of materials ranging from metals, exotic materials such as graphene, and topological insulators, or they can induce new phases of matter, as in conventional and unconventional superconductors, heavy fermion systems, and other systems of correlated electrons. As no single theoretical approach describes all such phenomena, the development of versatile methods for measuring many-body effects is key for understanding these systems. To date, angle-resolved photoemission spectroscopy (ARPES) has been the method of choice for accessing this physics by directly imaging momentum resolved electronic structure. Scanning tunneling microscopy/spectroscopy (STM/S), renown for its real-space atomic resolution capability, can also access the electronic structure in momentum space using Fourier transform scanning tunneling spectroscopy (FT-STS). Here, we report a high-resolution FT-STS measurement of the Ag(111) surface state, revealing fine structure in the otherwise parabolic electronic dispersion. This deviation is induced by interactions with lattice vibrations and has not been previously resolved by any technique. This study advances STM/STS as a method for quantitatively probing many-body interactions. Combined with the spatial sensitivity of STM/STS, this technique opens a new avenue for studying such interactions at the nano-scale. △ Less

Submitted 9 July, 2013; originally announced July 2013.

Journal ref: Phys. Rev. Lett. 111, 246804 (2013)

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Authors: A. R. Ullah, H. J. Joyce, A. M. Burke, H. H. Tan, C. Jagadish, A. P. Micolich

Abstract: We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. △ Less

Submitted 18 June, 2013; originally announced June 2013.

Comments: Submitted to Physica Status Solidi - Rapid Research Letters Focus Issue on Semiconductor Nanowires

Adsorption of PTCDA and C60 on KBr(001): electrostatic interaction versus electronic hybridization

Authors: Q. Jia, W. Ji, S. A. Burke, H. J. Gao, P. Grutter, H. Guo

Abstract: The adsorption of functional molecules on insulator surfaces is of great importance to molecular electronics. We present a systematical investigation of geometric and electronic properties of PTCDA and C60 on KBr(001) using DFT and non-contact atomic force microscopy. It was found that electrostatics is the primary interaction mechanism for PTCDA and C60 adsorbed on KBr. It was thus concluded that… ▽ More The adsorption of functional molecules on insulator surfaces is of great importance to molecular electronics. We present a systematical investigation of geometric and electronic properties of PTCDA and C60 on KBr(001) using DFT and non-contact atomic force microscopy. It was found that electrostatics is the primary interaction mechanism for PTCDA and C60 adsorbed on KBr. It was thus concluded that alkali-halides is a competitive candidate to be adopted to support low polarizability molecules, such as PTCDA, in future electronics. △ Less

Submitted 25 March, 2013; originally announced March 2013.

Comments: 25 pages, 10 figures, 4 tables

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

Authors: D. J. Carrad, A. M. Burke, P. J. Reece, R. W. Lyttleton, D. E. J. Waddington, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in pho… ▽ More We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in photoluminescence intensity for the (100) surface, an increase of only 2 - 3 x is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface. △ Less

Submitted 8 July, 2013; v1 submitted 4 December, 2012; originally announced December 2012.

Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices

Authors: A. M. Burke, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton, A. P. Micolich

Abstract: Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 x 2e^2/h anomaly. We report on the dependence of the 1D Lande g-factor g* and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g* val… ▽ More Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 x 2e^2/h anomaly. We report on the dependence of the 1D Lande g-factor g* and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g* values up to 2.8 for the lowest 1D subband, significantly exceeding previous in-plane g-factor values in AlGaAs/GaAs QPCs, and approaching that in InGaAs/InP QPCs. We show that g* is highly sensitive to confinement potential, particularly for the lowest 1D subband. This suggests careful management of the QPC's confinement potential may enable the high g* desirable for spintronic applications without resorting to narrow-gap materials such as InAs or InSb. The 0.7 anomaly and zero-bias peak are also highly sensitive to confining potential, explaining the conflicting density dependencies of the 0.7 anomaly in the literature. △ Less

Submitted 23 August, 2012; originally announced August 2012.

Comments: 23 pages, 7 figures

Bound States of Defects in Superconducting LiFeAs Studied by Scanning Tunneling Spectroscopy

Authors: S. Grothe, Shun Chi, P. Dosanjh, Ruixing Liang, W. N. Hardy, S. A. Burke, D. A. Bonn, Y. Pennec

Abstract: Defects in LiFeAs are studied by scanning tunneling microscopy (STM) and spectroscopy (STS). Topographic images of the five predominant defects allow the identification of their position within the lattice. The most commonly observed defect is associated with an Fe site and does not break the local lattice symmetry, exhibiting a bound state near the edge of the smaller gap in this multi-gap superc… ▽ More Defects in LiFeAs are studied by scanning tunneling microscopy (STM) and spectroscopy (STS). Topographic images of the five predominant defects allow the identification of their position within the lattice. The most commonly observed defect is associated with an Fe site and does not break the local lattice symmetry, exhibiting a bound state near the edge of the smaller gap in this multi-gap superconductor. Three other common defects, including one also on an Fe site, are observed to break local lattice symmetry and are pair-breaking indicated by clear in-gap bound states, in addition to states near the smaller gap edge. STS maps reveal complex, extended real-space bound state patterns, including one with a chiral distribution of the local density of states (LDOS). The multiple bound state resonances observed within the gaps and at the inner gap edge are consistent with theoretical predictions for s$^{\pm}$ gap symmetry proposed for LiFeAs and other iron pnictides. △ Less

Submitted 15 October, 2012; v1 submitted 17 July, 2012; originally announced July 2012.

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Authors: A. M. Burke, D. Waddington, D. Carrad, R. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of… ▽ More Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-doping layer with deep-trapping centers (e.g., by co-doping with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states. △ Less

Submitted 15 September, 2012; v1 submitted 12 July, 2012; originally announced July 2012.

Comments: 15 pages, 11 figures; Accepted for Physical Review B

Scanning tunneling spectroscopy of superconducting LiFeAs single crystals: Evidence for two nodeless energy gaps and coupling to a bosonic mode

Authors: Shun Chi, S. Grothe, Ruixing Liang, P. Dosanjh, W. N. Hardy, S. A. Burke, D. A. Bonn, Y. Pennec

Abstract: The superconducting compound, LiFeAs, is studied by scanning tunneling microscopy and spectroscopy. A gap map of the unreconstructed surface indicates a high degree of homogeneity in this system. Spectra at 2 K show two nodeless superconducting gaps with $Δ_1=5.3\pm0.1$ meV and $Δ_2=2.5\pm0.2$ meV. The gaps close as the temperature is increased to the bulk $T_c$ indicating that the surface accurat… ▽ More The superconducting compound, LiFeAs, is studied by scanning tunneling microscopy and spectroscopy. A gap map of the unreconstructed surface indicates a high degree of homogeneity in this system. Spectra at 2 K show two nodeless superconducting gaps with $Δ_1=5.3\pm0.1$ meV and $Δ_2=2.5\pm0.2$ meV. The gaps close as the temperature is increased to the bulk $T_c$ indicating that the surface accurately represents the bulk. A dip-hump structure is observed below $T_c$ with an energy scale consistent with a magnetic resonance recently reported by inelastic neutron scattering. △ Less

Submitted 6 July, 2012; v1 submitted 1 April, 2012; originally announced April 2012.

The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots

Authors: A. M. See, I. Pilgrim, B. C. Scannell, R. D. Montgomery, O. Klochan, A. M. Burke, M. Aagesen, P. E. Lindelof, I. Farrer, D. A. Ritchie, R. P. Taylor, A. R. Hamilton, A. P. Micolich

Abstract: Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and tha… ▽ More Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and that by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for `ballistic' transport in quantum dots. △ Less

Submitted 31 March, 2012; originally announced April 2012.

Comments: In press for Phys. Rev. Lett

Journal ref: Physical Review Letters 108, 196807 (2012)

Carbon Based Resistive Memory

Authors: Franz Kreupl, Rainer Bruchhaus, Petra Majewski, Jan B. Philipp, Ralf Symanczyk, Thomas Happ, Christian Arndt, Mirko Vogt, Roy Zimmermann, Axel Buerke, Andrew P. Graham, Michael Kund

Abstract: We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully d… ▽ More We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully demonstrated. △ Less

Submitted 28 January, 2009; originally announced January 2009.

Comments: to be published in Digest of the International Electron Devices Meeting (IEDM) 2008, p. 521-524, 4 pages, 12 figures