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Single-interface superconductivity in two-layer semiconductor heterostructures
Authors:
N. Ya. Fogel,
E. I. Buchstab,
Yu. V. Bomze,
O. I. Yuzephovich,
M. Yu. Mikhailov,
A. Yu. Sipatov,
E. A. Pashitskii,
R. I. Shekhter,
M. Jonson
Abstract:
We have discovered superconductivity in the two-layer semiconducting monochalcogenide heterostrutures PbTe/PbS, PbTe/PbSe and PbTe/YbS. By comparing data from two-layer samples with data from single monochalcogenide films we conclude that the superconductivity is connected with the interface between the two semiconductors. Evidence for the low dimensional nature of the superconducting interlayer…
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We have discovered superconductivity in the two-layer semiconducting monochalcogenide heterostrutures PbTe/PbS, PbTe/PbSe and PbTe/YbS. By comparing data from two-layer samples with data from single monochalcogenide films we conclude that the superconductivity is connected with the interface between the two semiconductors. Evidence for the low dimensional nature of the superconducting interlayer is presented and a model that explains the appearance of single-interface superconductivity is proposed.
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Submitted 14 November, 2005; v1 submitted 20 April, 2004;
originally announced April 2004.
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Two band transport and the question of a metal-insulator transition in GaAs/GaAlAs two dimensional holes
Authors:
Yuval Yaish,
Oleg Prus,
Evgeny Buchstab,
Gidi Ben Yoseph,
Uri Sivan,
Iddo Ussishkin,
Ady Stern
Abstract:
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas frequencies, classical positive magnetoresistance, and weak antilocalization. The latter effect combined with inelastic scattering between the spin-orbit split bands…
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The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas frequencies, classical positive magnetoresistance, and weak antilocalization. The latter effect combined with inelastic scattering between the spin-orbit split bands lead to metallic characteristics, namely resistance increase with temperature. At lower densities, when splitting is smaller than the inverse elastic scattering time, the two bands effectively merge to yield the expected insulating characteristics and negative magnetoresistance due to weak localization and interaction corrections to the conductivity. The "metal to insulator" transition at intermediate densities is found to be a smooth crossover between the two regimes rather than a quantum phase transition. Two band calculations of conventional interference and interaction effects account well for the data in the whole parameter range.
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Submitted 25 September, 2001;
originally announced September 2001.
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On the Relation between Interband Scattering and the "Metallic Phase" of Two Dimensional Holes in GaAs/AlGaAs
Authors:
Yuval Yaish,
Oleg Prus,
Evgeny Buchstab,
Shye Shapira,
Gidi Ben Yoseph,
Uri Sivan,
Ady Stern
Abstract:
The "metallic" regime of holes in GaAs/AlGaAs heterostructures corresponds to densities where two splitted heavy hole bands exist at a zero magnetic field. Using Landau fan diagrams and weak field magnetoresistance curves we extract the carrier density in each band and the interband scattering rates. The measured inelastic rates depend Arrheniusly on temperature with an activation energy similar…
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The "metallic" regime of holes in GaAs/AlGaAs heterostructures corresponds to densities where two splitted heavy hole bands exist at a zero magnetic field. Using Landau fan diagrams and weak field magnetoresistance curves we extract the carrier density in each band and the interband scattering rates. The measured inelastic rates depend Arrheniusly on temperature with an activation energy similar to that characterizing the longitudinal resistance. The "metallic" characteristics, namely, the resistance increase with temperature, is hence traced to the activation of inelastic interband scattering. The data are used to extract the bands dispersion relations as well as the two particle-hole excitation continua. It is then argued that acoustic plasmon mediated Coulomb scattering might be responsible for the Arrhenius dependence on temperature. The absence of standard Coulomb scattering characterized by a power law dependence upon temperature is pointed out.
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Submitted 13 May, 1999; v1 submitted 22 April, 1999;
originally announced April 1999.
