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Thermally-activated current transport in MgB_2 films
Authors:
S. Patnaik,
A. Gurevich,
S. D. Bu,
J. Choi,
C. B. Eom,
D. C. Larbalestier
Abstract:
Thermally-activated flux flow (TAFF) resistivity above the irreversibility field is reported for two different c-axis textured MgB_2 superconducting films. Transport measurements at different perpendicular magnetic fields 0 < B < 9 T and temperatures from 5 to 40K reveal TAFF Ohmic resistivity described by the Arrhenius law with the quadratic field dependence of the activation energy. Our transp…
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Thermally-activated flux flow (TAFF) resistivity above the irreversibility field is reported for two different c-axis textured MgB_2 superconducting films. Transport measurements at different perpendicular magnetic fields 0 < B < 9 T and temperatures from 5 to 40K reveal TAFF Ohmic resistivity described by the Arrhenius law with the quadratic field dependence of the activation energy. Our transport measurements on bulk MgB_2 ceramic samples also show the TAFF behavior, but do not show the quadratic field dependence of U(T,B). We explain our results in terms of thermally-activated drift of pre-existing quenched dislocations in the vortex lattice. Our results indicate that thermal fluctuations can be essential in determining the irreversibility field in MgB2 though to a much lesser extent than in high-temperature superconductors.
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Submitted 12 June, 2004;
originally announced June 2004.
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Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering
Authors:
A. Gurevich,
S. Patnaik,
V. Braccini,
K. H. Kim,
C. Mielke,
X. Song,
L. D. Cooley,
S. D. Bu,
D. M. Kim,
J. H. Choi,
L. J. Belenky,
J. Giencke,
M. K. Lee,
W. Tian,
X. Q. Pan,
A. Siri,
E. E. Hellstrom,
C. B. Eom,
D. C. Larbalestier
Abstract:
We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprat…
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We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprate superconductors such as $Nb_3Sn$ and Nb-Ti. Our high-field transport measurements give record values $H_{c2}^\perp (0) \approx 34T$ and $H_{c2}\|(0) \approx 49 T$ for high resistivity films and $H_{c2}(0)\approx 29 T$ for untextured bulk polycrystals. The highest $H_{c2}$ film also exhibits a significant upward curvature of $H_{c2}(T)$, and temperature dependence of the anisotropy parameter $γ(T) = H_{c2}\|/ H_{c2}^\perp$ opposite to that of single crystals: $γ(T)$ decreases as the temperature decreases, from $γ(T_c) \approx 2$ to $γ(0) \approx 1.5$. This remarkable $H_{c2}$ enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in $MgB_2$, which offers special opportunities for further $H_{c2}$ increase by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of $H_{c2}(T)$ observed suggest that $MgB_2$ can be made into a versatile, competitive high-field superconductor.
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Submitted 17 September, 2003; v1 submitted 20 May, 2003;
originally announced May 2003.
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MgB2 Energy Gap Determination by Scanning Tunneling Spectroscopy
Authors:
T. W. Heitmann,
S. D. Bu,
D. M. Kim,
J. H. Choi,
J. Giencke,
C. B. Eom,
K. A. Regan,
N. Rogado,
M. A. Hayward,
T. He,
J. S. Slusky,
P. Khalifah,
M. Haas,
R. J. Cava,
D. C Larbalestier,
M. S. Rzchowski
Abstract:
We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunneling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-in…
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We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunneling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap delta=2.3-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, delta=7.2 meV, consistent with a proposed two-band model.
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Submitted 29 September, 2003; v1 submitted 9 December, 2002;
originally announced December 2002.
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Measurements of Spin Polarization of Epitaxial SrRuO3 Thin Films
Authors:
B. Nadgorny,
M. S. Osofsky,
D. J. Singh,
G. T. Woods,
R. J. Soulen, Jr.,
M. K. Lee,
S. D. Bu,
C. B. Eom
Abstract:
We have measured the transport spin-polarization of epitaxial thin films of the conductive ferromagnetic oxide, SrRuO3, using Point Contact Andreev Reflection Spectroscopy (PCAR). In spite of the fact that spin-up and spin-down electronic densities of states at the Fermi level for SrRuO3 calculated from band structure theory are practically the same, the experimental transport spin polarization…
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We have measured the transport spin-polarization of epitaxial thin films of the conductive ferromagnetic oxide, SrRuO3, using Point Contact Andreev Reflection Spectroscopy (PCAR). In spite of the fact that spin-up and spin-down electronic densities of states at the Fermi level for SrRuO3 calculated from band structure theory are practically the same, the experimental transport spin polarization for these films was found to be about 50%. This result is a direct consequence of the Fermi velocity disparity between the majority and minority bands and is in good agreement with our theoretical estimates.
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Submitted 6 September, 2002;
originally announced September 2002.
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Formation of Co nanoclusters in epitaxial Ti_{0.96} Co_{0.04} O_2 thin films and their ferromagnetism
Authors:
D. H. Kim,
J. S. Yang,
K. W. Lee,
S. D. Bu,
T. W. Noh,
S. -J. Oh,
Y. -W. Kim,
J. -S. Chung,
H. Tanaka,
H. Y. Lee,
T. Kawai
Abstract:
Anatase Ti0.96Co0.04O2 films were grown epitaxially on SrTiO3 (001) substrates by using plused laser deposition with in-situ reflection high-energy electron diffraction. The oxygen partial pressure, PO2, during the growth was systematically varied. As PO2 decreased, the growth behavior was changed from a 2-dimensional layer-by-layer-like growth to a 3-dimensional island-like one, which resulted…
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Anatase Ti0.96Co0.04O2 films were grown epitaxially on SrTiO3 (001) substrates by using plused laser deposition with in-situ reflection high-energy electron diffraction. The oxygen partial pressure, PO2, during the growth was systematically varied. As PO2 decreased, the growth behavior was changed from a 2-dimensional layer-by-layer-like growth to a 3-dimensional island-like one, which resulted in an increase in the saturation magnetization. These structural and magnetic changes were explained in terms of the formation of cobalt clusters whose existence was proved by transmission-electron-microscopie studies. Our work clearly indicates that the cobalt clustering will cause room-temperature ferromagnetism in the Co-doped TiO2 films.
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Submitted 3 August, 2002;
originally announced August 2002.
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Synthesis and Properties of c-axis Oriented Epitaxial MgB2 Thin Films
Authors:
S. D. Bu,
D. M. Kim,
J. H. Choi,
J. Giencke,
S. Patnaik,
L. Cooley,
E. E. Hellstrom,
D. C. Larbalestier,
C. B. Eom,
; J. Lettieri,
D. G. Schlom,
; W. Tian,
X. Pan
Abstract:
We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-ray diffraction and cross-sectional TEM reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate and…
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We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-ray diffraction and cross-sectional TEM reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate and a 30 degree rotation in the ab-plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2(parallel to the film) / Hc2(pendicular to the film), about 3 at 25K. The critical current densities at 4.2 K and 20 K (at 1 T perpendicular magnetic field) are 5x10E6 A/cm2 and 1x10E6 A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications.
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Submitted 29 March, 2002;
originally announced April 2002.
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Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films
Authors:
S. Patnaik,
L. D. Cooley,
A. Gurevich,
A. A. Polyanskii,
J. Jiang,
X. Y. Cai,
A. A. Squitieri,
M. T. Naus,
M. K. Lee,
J. H. Choi,
L. Belenky,
S. D. Bu,
J. Letteri,
X. Song,
D. G. Schlom,
S. E. Babcock,
C. B. Eom,
E. E. Hellstrom,
D. C. Larbalestier
Abstract:
An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase d…
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An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H* ~ 0.8Hc2perp(T) in untextured samples. Hc2par(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.
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Submitted 28 April, 2001;
originally announced April 2001.
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Thin Film Magnesium Boride Superconductor with Very High Critical Current Density and Enhanced Irreversibility Field
Authors:
C. B. Eom,
M. K. Lee,
J. H. Choi,
L. Belenky,
X. Song,
L. D. Cooley,
M. T. Naus,
S. Patnaik,
J. Jiang,
M. Rikel,
A. Polyanskii,
A. Gurevich,
X. Y. Cai,
S. D. Bu,
S. E. Babcock,
E. E. Hellstrom,
D. C. Larbalestier,
N. Rogado,
K. A. Regan,
M. A. Hayward,
T. He,
J. S. Slusky,
K. Inumaru,
M. K. Haas,
R. J. Cava
Abstract:
The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of Nb_3Sn and four times that of Nb-Ti alloy, MgB_2 has the potential to reach much higher fields and current densities than either of these technological superco…
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The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of Nb_3Sn and four times that of Nb-Ti alloy, MgB_2 has the potential to reach much higher fields and current densities than either of these technological superconductors. A vital prerequisite, strongly linked current flow, has already been demonstrated even at this early stage. One possible drawback is the observation that the field at which superconductivity is destroyed is modest. Further, the field which limits the range of practical applications, the irreversibility field H*(T), is ~7 T at liquid helium temperature (4.2 K), significantly lower than ~10 T for Nb-Ti and ~20 T for Nb_3Sn. Here we show that MgB_2 thin films can exhibit a much steeper temperature dependence of H*(T) than is observed in bulk materials, yielding H*(4.2 K) above 14 T. In addition, very high critical current densities at 4.2 K, 1 MA/cm_2 at 1 T and 10_5 A/cm_2 at 10 T, are possible. These data demonstrate that MgB_2 has credible potential for high-field superconducting applications.
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Submitted 20 March, 2001;
originally announced March 2001.