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Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10-1 mbar oxygen pressure
Authors:
Carmela Aruta,
Salvarore Amoruso,
Giovanni Ausanio,
Riccardo Bruzzese,
Emiliano Di Gennaro,
Marco Lanzano,
Fabio Miletto Granozio,
Muhammad Riaz,
Alessia Sambri,
Umberto Scotti di Uccio,
Xuan Wang
Abstract:
We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the inte…
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We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced content of oxygen defects is expected.
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Submitted 6 April, 2012; v1 submitted 2 January, 2012;
originally announced January 2012.
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Pulsed laser deposition of SrTiO3/LaGaO3 and SrTiO3/LaAlO3: plasma plume effects
Authors:
C. Aruta,
S. Amoruso,
R. Bruzzese,
X. Wang,
D. Maccariello,
F. Miletto Granozio,
U. Scotti di Uccio
Abstract:
Pulsed laser deposition of SrTiO3/LaGaO3 and SrTiO3/LaAlO3 interfaces has been analyzed with a focus on the kinetic energy of the ablated species. LaGaO3 and LaAlO3 plasma plumes were studied by fast photography and space-resolved optical emission spectroscopy. Reflection high energy electron diffraction was performed proving a layer-by-layer growth up to 10-1 mbar oxygen pressure. The role of the…
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Pulsed laser deposition of SrTiO3/LaGaO3 and SrTiO3/LaAlO3 interfaces has been analyzed with a focus on the kinetic energy of the ablated species. LaGaO3 and LaAlO3 plasma plumes were studied by fast photography and space-resolved optical emission spectroscopy. Reflection high energy electron diffraction was performed proving a layer-by-layer growth up to 10-1 mbar oxygen pressure. The role of the energetic plasma plume on the two-dimensional growth and the presence of interfacial defects at different oxygen growth pressure has been discussed in view of the conducting properties developing at such polar/non-polar interfaces.
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Submitted 2 October, 2010;
originally announced October 2010.
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Growth methods of c-axis oriented MgB2 thin films by pulsed laser deposition
Authors:
V. Ferrando,
S. Amoruso,
E. Bellingeri,
R. Bruzzese,
P. Manfrinetti,
D. Marre',
R. Velotta,
X. Wang,
C. Ferdeghini
Abstract:
High quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and on Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature starting both from stoichiometric target and from boron target: after this first step, it is annealed in magnesium atmosphere in order to crystallize the supercondu…
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High quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and on Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature starting both from stoichiometric target and from boron target: after this first step, it is annealed in magnesium atmosphere in order to crystallize the superconducting phase. The so obtained films show a strong c-axis orientation, evidenced by XRD analysis, a critical temperature up to 38 K and very high critical fields along the basal planes, up to 22T at 15K. Also an in situ one step technique for the realization of superconducting MgB2 thin films has been developed. In this case, the presence of an argon buffer gas during deposition is crucial and we observe a strong dependence of the quality of the deposited film on the background gas pressure. The influence of the Ar atmosphere has been confirmed by time and space-resolved spectroscopy measurements on the emission spectrum of the plume. The Ar pressure modifies strongly the plasma kinetics by promoting excitation and ionization of the plume species, especially of the most volatile Mg atoms, increasing their internal energy.
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Submitted 2 October, 2002;
originally announced October 2002.
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Optical emission investigation of laser-produced MgB2 plume expanding in an Ar buffer gas
Authors:
S. Amoruso,
R. Bruzzese,
N. Spinelli,
R. Velotta,
X. Wang,
C. Ferdeghini
Abstract:
Optical emission spectroscopy is used to study the dynamics of the plasma generated by pulsed-laser irradiation of a MgB2 target, both in vacuum and at different Ar buffer gas pressures. The analysis of the time-resolved emission of selected species shows that the Ar background gas strongly influences the plasma dynamics. Above a fixed pressure, plasma propagation into Ar leads to the formation…
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Optical emission spectroscopy is used to study the dynamics of the plasma generated by pulsed-laser irradiation of a MgB2 target, both in vacuum and at different Ar buffer gas pressures. The analysis of the time-resolved emission of selected species shows that the Ar background gas strongly influences the plasma dynamics. Above a fixed pressure, plasma propagation into Ar leads to the formation of blast waves causing both a considerable increase of the fraction of excited Mg atoms and a simultaneous reduction of their kinetic flux energy. These results can be particularly useful for optimizing MgB2 thin film deposition processes.
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Submitted 17 April, 2002;
originally announced April 2002.
