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Optical Properties of Anisotropic Excitons in Phosphorene
Authors:
Matthew N. Brunetti,
Oleg L. Berman,
Roman Ya. Kezerashvili
Abstract:
We study the eigenenergies and optical properties of both direct excitons in a phosphorene monolayer in different dielectric environments, and indirect excitons in heterostructures of phosphorene with hexagonal boron nitride. For these systems, we solve the 2D Schrödinger equation using the Rytova-Keldysh (RK) potential for direct, and both the RK and Coulomb potentials for indirect excitons. The…
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We study the eigenenergies and optical properties of both direct excitons in a phosphorene monolayer in different dielectric environments, and indirect excitons in heterostructures of phosphorene with hexagonal boron nitride. For these systems, we solve the 2D Schrödinger equation using the Rytova-Keldysh (RK) potential for direct, and both the RK and Coulomb potentials for indirect excitons. The results show that excitons formed from charge carriers with anisotropic effective mass exhibit enhanced (suppressed) optical absorption, compared to their 2D isotropic counterparts, under linearly polarized excitations along the crystal axis with relatively smaller (larger) effective carrier masses. This anisotropy leads to dramatically different excited states than the isotropic exciton. The direct exciton binding energy depends strongly on the dielectric environment, and shows good agreement with previously published data. For indirect excitons, the oscillator strength and absorption coefficient increase as the interlayer separation increases. The choice of RK or Coulomb potential does not significantly change the indirect exciton optical properties, but leads to significant differences in the binding energy for small interlayer separation.
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Submitted 25 July, 2019;
originally announced July 2019.
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High-temperature tunable superfluidity of polaritons in Xene monolayers in an optical microcavity
Authors:
Matthew N. Brunetti,
Oleg. L. Berman,
Roman Ya. Kezerashvili
Abstract:
We study tunable polaritons in monolayers of silicene, germanene, and stanene (Xenes) via an external electric field in an open optical microcavity whose length can be adjusted. An external electric field applied perpendicular to the plane of the Xene monolayer simultaneously changes the band gap and the exciton binding energy, while the variable length of the open microcavity allows one to keep t…
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We study tunable polaritons in monolayers of silicene, germanene, and stanene (Xenes) via an external electric field in an open optical microcavity whose length can be adjusted. An external electric field applied perpendicular to the plane of the Xene monolayer simultaneously changes the band gap and the exciton binding energy, while the variable length of the open microcavity allows one to keep the exciton and cavity photon modes in resonance. First, the Schrödinger equation for an electron and hole in an Xene monolayer is solved, yielding the eigenergies and eigenfunctions of the exciton as a function of the external electric field. The dependence of the polaritonic properties, such as the Rabi splitting and cavity photon damping, on the external electric field and on the cavity length, is analyzed. The Berezinskii-Kosterlitz-Thouless (BKT) transition temperature of polaritons is calculated as a function of the external electric field. We analyze and present the conditions for a room-temperature superfluid of lower polaritons by simultaneously maximizing the Rabi splitting and BKT transition temperature.
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Submitted 23 March, 2019;
originally announced March 2019.
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Can freestanding Xene monolayers behave as excitonic insulators?
Authors:
Matthew N. Brunetti,
Oleg L. Berman,
Roman Ya. Kezerashvili
Abstract:
We predict a phase transition in freestanding monolayer Xenes from the semiconducting phase to the excitonic insulating (EI) phase can be induced by reducing an external electric field below some critical value which is unique to each material. The splitting of the conduction and valence bands due to spin-orbit coupling at non-zero electric fields leads to the formation of $A$ and $B$ excitons in…
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We predict a phase transition in freestanding monolayer Xenes from the semiconducting phase to the excitonic insulating (EI) phase can be induced by reducing an external electric field below some critical value which is unique to each material. The splitting of the conduction and valence bands due to spin-orbit coupling at non-zero electric fields leads to the formation of $A$ and $B$ excitons in the larger or smaller band gap, with correspondingly larger or smaller binding energies. Our calculations show the coexistence of the semiconducting phase of $A$ excitons with the EI phase of $B$ excitons for a particular range of electric field. The dielectric environment precludes the existence of the EI phase in supported or encapsulated monolayer Xenes.
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Submitted 16 November, 2018; v1 submitted 11 September, 2018;
originally announced September 2018.
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On the Optical Properties of Excitons in Buckled 2D Materials in an External Electric Field
Authors:
Matthew N Brunetti,
Oleg L. Berman,
Roman Ya. Kezerashvili
Abstract:
We study the binding energies and optical properties of direct and indirect excitons in monolayers and double layer heterostructures of Xenes: silicene, germanene, and stanene. It is demonstrated that an external electric field can be used to tune the eigenenergies and optical properties of excitons by changing the effective mass of charge carriers. The Schrödinger equation with field-dependent ex…
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We study the binding energies and optical properties of direct and indirect excitons in monolayers and double layer heterostructures of Xenes: silicene, germanene, and stanene. It is demonstrated that an external electric field can be used to tune the eigenenergies and optical properties of excitons by changing the effective mass of charge carriers. The Schrödinger equation with field-dependent exciton reduced mass is solved by using the Rytova-Keldysh (RK) potential for direct excitons, while both the RK and Coulomb potentials are used for indirect excitons. It is shown that for indirect excitons, the choice of interaction potential can cause huge differences in the eigenenergies at large electric fields and significant differences even at small electric fields. Furthermore, our calculations show that the choice of material parameters has a significant effect on the binding energies and optical properties of direct and indirect excitons. These calculations contribute to the rapidly growing body of research regarding the excitonic and optical properties of this new class of two dimensional semiconductors.
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Submitted 1 July, 2018;
originally announced July 2018.
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Optical Absorption by Indirect Excitons in a Transition Metal Dichalcogenide Double Layer
Authors:
Matthew N. Brunetti,
Oleg L. Berman,
Roman Ya. Kezerashvili
Abstract:
We calculate the binding energy, transition energies, oscillator strength, and absorption coefficient of indirect excitons in transition metal dichalcogenide (TMDC) double layers separated by an integer number of hexagonal boron nitride (h-BN) monolayers. The absorption factor, a dimensionless quantity which gives the fraction of incoming photons absorbed by the indirect excitons in the double lay…
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We calculate the binding energy, transition energies, oscillator strength, and absorption coefficient of indirect excitons in transition metal dichalcogenide (TMDC) double layers separated by an integer number of hexagonal boron nitride (h-BN) monolayers. The absorption factor, a dimensionless quantity which gives the fraction of incoming photons absorbed by the indirect excitons in the double layer, is evaluated. The aforementioned optical quantities are obtained for transitions from the ground state to the first two excited states. All quantities are studied as a function of the interlayer separation, which may be experimentally controlled by varying the number of h-BN monolayers between the TMDC layers. Calculations are performed by using the exciton wave function and eigenenergies obtained for the Keldysh potential. For each material, we choose a combination of the exciton reduced mass and the dielectric screening length from the existing literature which give the largest and the smallest indirect exciton binding energy. These combinations of material parameters provide upper and lower bounds on all quantities presented. Our findings can be examined experimentally via two-photon spectroscopy.
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Submitted 2 March, 2018; v1 submitted 13 November, 2017;
originally announced November 2017.
