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Improper Ferroelectricity at the Monolayer Limit
Authors:
Yilin Evan Li,
Harikrishnan KP,
Haidong Lu,
Rachel A. Steinhardt,
Megan E. Holtz,
Mario Brützam,
Matthew M. Dykes,
Elke Arenholz,
Sankalpa Hazra,
Adriana LaVopa,
Xiaoxi Huang,
Wenwen Zhao,
Piush Behera,
Maya Ramesh,
Evan Krysko,
Venkatraman Gopalan,
Ramamoorthy Ramesh,
Craig J. Fennie,
Robert J. Cava,
Christo Guguschev,
Alexei Gruverman,
David A. Muller,
Darrell G. Schlom
Abstract:
Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are proper ferroelectrics, where spontaneous polarization is the primary order parameter. Unfortunately, the Curie temperature of proper ferroelectrics is drastically reduced as the ferroelectric becomes thin; nearly all prope…
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Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are proper ferroelectrics, where spontaneous polarization is the primary order parameter. Unfortunately, the Curie temperature of proper ferroelectrics is drastically reduced as the ferroelectric becomes thin; nearly all proper ferroelectrics need to be thicker than several unit cells. The absence of an ultrathin limit has been predicted, but not verified for improper ferroelectrics. These are ferroelectrics where the polarization emerges secondary to the primary order parameter, such as a structural distortion. Here we report improper ferroelectricity with an undiminished Curie temperature in a 0.75-unit-cell-thick hexagonal LuFeO3 (h-LuFeO3) film grown on a SrCo2Ru4O11 bottom electrode with an atomically engineered monolayer bridging layer. Our results demonstrate the absence of a critical thickness for improper ferroelectricity and provide a methodology for creating ultrathin improper ferroelectrics by stabilizing their primary order parameters.
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Submitted 8 March, 2025;
originally announced March 2025.
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Picosecond expansion in LaAlO3 resonantly driven by infrared-active phonons
Authors:
Jakob Gollwitzer,
Jeffrey Z. Kaaret,
Y. Eren Suyolcu,
Guru Khalsa,
Rylan C. Fernandes,
Oleg Gorobtsov,
Sören Buchenau,
ChanJu You,
Jayanti Higgins,
Ryan S. Russell,
Ziming Shao,
Yorick A. Birkhölzer,
Takahiro Sato,
Matthieu Chollet,
Giacomo Coslovich,
Mario Brützam,
Christo Guguschev,
John W. Harter,
Ankit S. Disa,
Darrell G. Schlom,
Nicole A. Benedek,
Andrej Singer
Abstract:
We investigate the ultrafast structural dynamics of LaAlO3 thin films driven by short mid-infrared laser pulses at 20 THz. Time-resolved X-ray diffraction reveals an immediate lattice expansion and an acoustic breathing mode of the film. First-principles theory and a spring-mass model identify the direct coupling between coherently driven infrared-active phonons and strain as the underlying mechan…
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We investigate the ultrafast structural dynamics of LaAlO3 thin films driven by short mid-infrared laser pulses at 20 THz. Time-resolved X-ray diffraction reveals an immediate lattice expansion and an acoustic breathing mode of the film. First-principles theory and a spring-mass model identify the direct coupling between coherently driven infrared-active phonons and strain as the underlying mechanism. Time-resolved optical birefringence measurements confirm that the amplitude of this acoustic mode scales linearly with the pump fluence, which agrees with the theory. Furthermore, time-resolved X-ray diffuse scattering indicates that THz excitation enhances crystallinity by inducing a non-thermal increase in structural symmetry originating from preexisting defects. These findings highlight the potential of a multimodal approach-combining time-resolved X-ray and optical measurements and first-principles theory-to elucidate and control structural dynamics in nanoscale materials.
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Submitted 22 December, 2024;
originally announced December 2024.
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Single crystal growth and characterization of Ba$_2$ScNbO$_6$ -- a novel substrate for BaSnO$_3$ films
Authors:
C. Guguschev,
D. Klimm,
M. Brützam,
T. M. Gesing,
M. Gogolin,
H. Paik,
A. Dittmar,
V. J. Fratello,
D. G. Schlom
Abstract:
Large single crystals of the double-perovskite Ba$_2$ScNbO$_6$ were grown from the melt for the first time. With a lattice parameter at room temperature of 4.11672(1) Å, this cubic double-perovskite has an excellent lattice match to BaSnO$_3$, PbZr$_{0.9}$Ti$_{0.1}$O$_3$, LaInO$_3$, BiScO$_3$, and other perovskites of contemporary interest. Differential thermal analysis showed that Ba$_2$ScNbO…
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Large single crystals of the double-perovskite Ba$_2$ScNbO$_6$ were grown from the melt for the first time. With a lattice parameter at room temperature of 4.11672(1) Å, this cubic double-perovskite has an excellent lattice match to BaSnO$_3$, PbZr$_{0.9}$Ti$_{0.1}$O$_3$, LaInO$_3$, BiScO$_3$, and other perovskites of contemporary interest. Differential thermal analysis showed that Ba$_2$ScNbO$_6$ melts at 2165$\pm$30°C in an inert atmosphere. Competitive grain growth was visualized by energy dispersive Laue mapping. X-ray diffraction rocking curve measurements revealed full width at half maximum values between 21 and 33 arcsec for 002 and 004 reflections. The crystals were sufficiently large to yield (100)-oriented single-crystal substrates with surface areas as large as 10 x 10 mm$^2$.
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Submitted 5 July, 2019;
originally announced July 2019.
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Superconductivity-localization interplay and fluctuation magnetoresistance in epitaxial BaPb$_{1-x}$Bi$_x$O$_3$ thin films
Authors:
David T. Harris,
Neil Campbell,
Reinhard Uecker,
Mario Brützam,
Darrell G. Schlom,
Alex Levchenko,
Mark S. Rzchowski,
Chang-Beom Eom
Abstract:
BaPb$_{1-x}$Bi$_x$O$_3$ is a superconductor, with transition temperature $T_c=11$ K, whose parent compound BaBiO$_3$ possess a charge ordering phase and perovskite crystal structure reminiscent of the cuprates. The lack of magnetism simplifies the BaPb$_{1-x}$Bi$_{x}$O$_3$ phase diagram, making this system an ideal platform for contrasting high-$T_c$ systems with isotropic superconductors. Here we…
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BaPb$_{1-x}$Bi$_x$O$_3$ is a superconductor, with transition temperature $T_c=11$ K, whose parent compound BaBiO$_3$ possess a charge ordering phase and perovskite crystal structure reminiscent of the cuprates. The lack of magnetism simplifies the BaPb$_{1-x}$Bi$_{x}$O$_3$ phase diagram, making this system an ideal platform for contrasting high-$T_c$ systems with isotropic superconductors. Here we use high-quality epitaxial thin films and magnetotransport to demonstrate superconducting fluctuations that extend well beyond $T_c$. For the thickest films (thickness above $\sim100$ nm) this region extends to $\sim27$ K, well above the bulk $T_c$ and remarkably close to the higher $T_c$ of Ba$_{1-x}$K$_x$BiO$_3$ ($T_c=31$ K). We drive the system through a superconductor-insulator transition by decreasing thickness and find the observed $T_c$ correlates strongly with disorder. This material manifests strong fluctuations across a wide range of thicknesses, temperatures, and disorder presenting new opportunities for understanding the precursor of superconductivity near the 2D-3D dimensionality crossover.
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Submitted 23 March, 2018; v1 submitted 11 January, 2018;
originally announced January 2018.
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Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Authors:
Hanjong Paik,
Zhen Chen,
Edward Lochocki,
Ariel H. Seidner,
Amit Verma,
Nicholas Tanen,
Jisung Park,
Masaki Uchida,
ShunLi Shang,
Bi-Cheng Zhou,
Mario Brützam,
Reinhard Uecker,
Zi-Kui Liu,
Debdeep Jena,
Kyle M. Shen,
David A. Muller,
Darrell G. Schlom
Abstract:
Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the high concentration (1.2x10^11 cm^-2) of threading dislocations present. In comparison…
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Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the high concentration (1.2x10^11 cm^-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden Popper crystallographic shear faults. This suggests that in addition to threading dislocations that other defects possibly (BaO)2 crystallographic shear defects or point defects significantly reduce the electron mobility.
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Submitted 1 November, 2017;
originally announced November 2017.
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Strain Control of Fermiology and Many-Body Interactions in Two-Dimensional Ruthenates
Authors:
B. Burganov,
C. Adamo,
A. Mulder,
M. Uchida,
P. D. C. King,
J. W. Harter,
D. E. Shai,
A. S. Gibbs,
A. P. Mackenzie,
R. Uecker,
M. Bruetzam,
M. R. Beasley,
C. J. Fennie,
D. G. Schlom,
K. M. Shen
Abstract:
Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr$_2$RuO$_4$ and its isoelectronic counterpart Ba$_2$RuO$_4$ using oxide molecular beam epitaxy (MBE), \emph{in situ} angle-resolved photoemission spectroscopy (ARPES), and transport measurements. Near the topological transition of the…
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Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr$_2$RuO$_4$ and its isoelectronic counterpart Ba$_2$RuO$_4$ using oxide molecular beam epitaxy (MBE), \emph{in situ} angle-resolved photoemission spectroscopy (ARPES), and transport measurements. Near the topological transition of the $γ$ Fermi surface sheet, we observe clear signatures of critical fluctuations, while the quasiparticle mass enhancement is found to increase rapidly and monotonically with increasing Ru-O bond distance. Our work demonstrates the possibilities for using epitaxial strain as a disorder-free means of manipulating emergent properties, many-body interactions, and potentially the superconductivity in correlated materials.
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Submitted 18 May, 2016;
originally announced May 2016.
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Growth and Investigation of Nd_{1-x}Sm_{x}ScO_{3} and Sm_{1-x}Gd_{x}ScO_{3} Solid-Solution Single Crystals
Authors:
R. Uecker,
D. Klimm,
R. Bertram,
M. Bernhagen,
I. Schulze-Jonack,
M. Brützam,
A. Kwasniewski,
Th. M. Gesing,
D. G. Schlom
Abstract:
The pseudo-cubic lattice parameters of rare-earth (RE) scandate, REScO3, single crystals grown by the Czochralski technique with RE=Dy to Pr lie between about 3.95 and 4.02 Angstrom. These crystals are the only available perovskite substrates in this lattice constant range that can withstand virtually any thin film growth conditions. Two members of this series, PmScO3 and EuScO3, are, however, not…
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The pseudo-cubic lattice parameters of rare-earth (RE) scandate, REScO3, single crystals grown by the Czochralski technique with RE=Dy to Pr lie between about 3.95 and 4.02 Angstrom. These crystals are the only available perovskite substrates in this lattice constant range that can withstand virtually any thin film growth conditions. Two members of this series, PmScO3 and EuScO3, are, however, not suitable for substrate applications. Because the pseudo-cubic lattice parameters between neighbouring REScO3 compounds decrease with rising atomic number of the RE in about 0.01 Angstrom steps, the unsuitability of PmScO3 (radioactivity) and EuScO3 (incompatibility with Si) causes an interruption in this lattice spacing sequence. To replace them, solid solutions of their adjacent rare-earth scandates, i.e., (Nd0.5Sm0.5)ScO3 and (Sm0.5Gd0.5)ScO3, were grown by the Czochralski method. Their average pseudo-cubic lattice parameters of 3.9979 Angstrom and 3.9784 Angstrom are very close to those of PmScO3 and EuScO3, respectively, and they show very low segregation. These qualities make these solid solutions excellent substitutes for PmScO3 and EuScO3.
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Submitted 10 June, 2013; v1 submitted 5 April, 2013;
originally announced April 2013.
