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Solution nuclear magnetic resonance spectroscopy on a nanostructured diamond chip
Authors:
P. Kehayias,
A. Jarmola,
N. Mosavian,
I. Fescenko,
F. M. Benito,
A. Laraoui,
J. Smits,
L. Bougas,
D. Budker,
A. Neumann,
S. R. J. Brueck,
V. M. Acosta
Abstract:
We demonstrate nuclear magnetic resonance (NMR) spectroscopy of picoliter-volume solutions with a nanostructured diamond chip. Using optical interferometric lithography, diamond surfaces were nanostructured with dense, high-aspect-ratio nanogratings, enhancing the surface area by more than a factor of 15 over mm^2 regions of the chip. The nanograting sidewalls were doped with nitrogen-vacancy (NV)…
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We demonstrate nuclear magnetic resonance (NMR) spectroscopy of picoliter-volume solutions with a nanostructured diamond chip. Using optical interferometric lithography, diamond surfaces were nanostructured with dense, high-aspect-ratio nanogratings, enhancing the surface area by more than a factor of 15 over mm^2 regions of the chip. The nanograting sidewalls were doped with nitrogen-vacancy (NV) centers so that more than 10 million NV centers in a (25 micrometer)^2 laser spot are located close enough to the diamond surface (5 nm) to detect the NMR spectrum of 1 pL of fluid lying within adjacent nanograting grooves. The platform was used to perform 1H and 19F NMR spectroscopy at room temperature in magnetic fields below 50 mT. Using a solution of CsF in glycerol, we demonstrate that 4 +/- 2 x 10^12 19F spins in a 1 pL volume, can be detected with a signal-to-noise ratio of 3 in 1 s integration. This represents nearly two orders of magnitude improvement in concentration sensitivity over previous NV and picoliter NMR studies.
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Submitted 5 January, 2017;
originally announced January 2017.
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Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime
Authors:
C. S. Mayberry,
Danhong Huang,
G. Balakrishnan,
C. Kouhestani,
N. Islam,
S. R. J. Brueck,
A. K. Sharma
Abstract:
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed oxide charges in the thermally grown SiO2 layer and the Si/SiO2 interface, the effective Si cross-sectional wall widths were considerably narrower than the act…
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We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed oxide charges in the thermally grown SiO2 layer and the Si/SiO2 interface, the effective Si cross-sectional wall widths were considerably narrower than the actual physical widths, due the formation of depletion regions from both sides. These nanostructures were configured into a metal-semiconductor-metal device configuration that was isolated from the substrate region. Dark currents, dc-photo-response, and carrier "time-of-flight" response measurements using a mode-locked femtosecond laser, were used in the study. In the narrowest wall devices, a considerable increase in conductivity was observed as a result of higher carrier mobilities due to lateral constriction and strain. The strain effects, which include the reversal splitting of light- and heavy- hole bands as well as the decrease of conduction-band effective mass by reduced Si bandgap energy, are formulated in our microscopic model for explaining the experimentally observed enhancements in both conduction- and valence-band mobilities with reduced Si wall thickness. The role of the biaxial strain buffing depth is elucidated and the quasi-quantum effect for the saturation hole mobility at small wall thickness is also found and explained. Specifically, the enhancements of the valence-band and conduction-band mobilities are found to be associated with different aspects of theoretical model.
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Submitted 23 May, 2015;
originally announced May 2015.
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Vortex configurations, matching, and domain structure in large arrays of artificial pinning centers
Authors:
S. B. Field,
S. S. James,
J. Barentine,
V. Metlushko,
G. Crabtree,
H. Shtrikman,
B. Ilic,
S. R. J. Brueck
Abstract:
High-resolution scanning Hall probe microscopy has been used to image vortex configurations in very large periodic arrays of artificial pinning sites. Strong matching effects are seen at fields where either one or two vortices can sit at a site; with three vortices per site, however, no clear matching is observed. Matching effects have been also been observed at several fractional multiples of t…
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High-resolution scanning Hall probe microscopy has been used to image vortex configurations in very large periodic arrays of artificial pinning sites. Strong matching effects are seen at fields where either one or two vortices can sit at a site; with three vortices per site, however, no clear matching is observed. Matching effects have been also been observed at several fractional multiples of the matching field, including 1/5, 1/4, 1/3, 1/2, and 3/4. These fractional values are characterized by striking domain structure and grain boundaries.
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Submitted 25 March, 2000;
originally announced March 2000.
