Projected mushroom-type phase-change memory
Authors:
Syed Ghazi Sarwat,
Timothy M. Philip,
Ching-Tzu Chen,
Benedikt Kersting,
Robert L Bruce,
Cheng-Wei Cheng,
Ning Li,
Nicole Saulnier,
Matthew BrightSky,
Abu Sebastian
Abstract:
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promi…
▽ More
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here we investigate the projection mechanism in a prominent phase-change memory device architecture, namely mushroom-type phase-change memory. Using nanoscale projected Ge2Sb2Te5 devices we study the key attributes of state-dependent resistance, drift coefficients, and phase configurations, and using them reveal how these devices fundamentally work.
△ Less
Submitted 3 January, 2022; v1 submitted 28 May, 2021;
originally announced May 2021.
