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Observation of Buried Phosphorus Dopants near Clean Si(100)-(2x1) with Scanning Tunneling Microscopy
Authors:
Geoffrey W. Brown,
Holger Grube,
Marilyn E. Hawley
Abstract:
We have used scanning tunneling microscopy to identify individual phosphorus dopant atoms near the clean silicon (100)-(2x1) reconstructed surface. The charge-induced band bending signature associated with the dopants shows up as an enhancement in both filled and empty states and is consistent with the appearance of n-type dopants on compound semiconductor surfaces and passivated Si(100)-(2x1).…
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We have used scanning tunneling microscopy to identify individual phosphorus dopant atoms near the clean silicon (100)-(2x1) reconstructed surface. The charge-induced band bending signature associated with the dopants shows up as an enhancement in both filled and empty states and is consistent with the appearance of n-type dopants on compound semiconductor surfaces and passivated Si(100)-(2x1). We observe dopants at different depths and see a strong dependence of the signature on the magnitude of the sample voltage. Our results suggest that, on this clean surface, the antibonding surface state band acts as an extension of the bulk conduction band into the gap. The positively charged dimer vacancies that have been observed previously appear as depressions in the filled states, as opposed to enhancements, because they disrupt these surface bands.
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Submitted 26 May, 2004;
originally announced May 2004.
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Split-off dimer defects on the Si(001)2x1 surface
Authors:
S. R. Schofield,
N. A. Marks,
N. J. Curson,
J. L. O'Brien,
G. W. Brown,
M. Y. Simmons,
R. G. Clark,
M. E. Hawley,
H. F. Wilson
Abstract:
Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated 'split-off' dimers in these defect complexes are imaged as pairs of protrusions while the surrounding Si surface dimers appear as the usual 'bean-shaped' protr…
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Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated 'split-off' dimers in these defect complexes are imaged as pairs of protrusions while the surrounding Si surface dimers appear as the usual 'bean-shaped' protrusions. We attribute this to the formation of pi-bonds between the two atoms of the split-off dimer and second layer atoms, and present charge density plots to support this assignment. We observe a local brightness enhancement due to strain for different DV complexes and provide the first experimental confirmation of an earlier prediction that the 1+2-DV induces less surface strain than other DV complexes. Finally, we present a previously unreported triangular shaped split-off dimer defect complex that exists at SB-type step edges, and propose a structure for this defect involving a bound Si monomer.
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Submitted 5 May, 2003;
originally announced May 2003.
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Towards the fabrication of phosphorus qubits for a silicon quantum computer
Authors:
J. L. O'Brien,
S. R. Schofield,
M. Y. Simmons,
R. G. Clark,
A. S. Dzurak,
N. J. Curson,
B. E. Kane,
N. S. McAlpine,
M. E. Hawley,
G. W. Brown
Abstract:
The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive due to the long spin relaxation times involved, their scalability, and the ease of integration with existing silicon technology. Fabrication of suc…
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The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive due to the long spin relaxation times involved, their scalability, and the ease of integration with existing silicon technology. Fabrication of such devices however requires atomic scale manipulation - an immense technological challenge. We demonstrate that it is possible to fabricate an atomically-precise linear array of single phosphorus bearing molecules on a silicon surface with the required dimensions for the fabrication of a silicon-based quantum computer. We also discuss strategies for the encapsulation of these phosphorus atoms by subsequent silicon crystal growth.
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Submitted 30 April, 2001;
originally announced April 2001.
