Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
Authors:
Daniel Brito,
Ana Pérez-Rodriguez,
Ishwor Khatri,
Carlos José Tavares,
Mario Amado,
Eduardo Castro,
Enrique Diez,
Sascha Sadewasser,
Marcel S Claro
Abstract:
Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting…
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Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting the chemical potential into the bandgap, turning the transport of the surface states to be more pronounced than the bulk counterpart. In this work, $Bi_2Se_3$ was grown by molecular beam epitaxy and doped with 0.8, 2, 7, and 14 at. % of Ga, with the aim of shifting the chemical potential into the bandgap. The structural, morphological, and electronic properties of the Ga doped $Bi_2Se_3$ are studied. Raman and X-ray diffraction measurements confirmed the incorporation of the dopants into the crystal structure. Transport and magnetoresistance measurements in the temperature range of 1.5 to 300 K show that Ga-doped $Bi_2Se_3$ is n-type with a bulk charge carrier concentration of $10^{19} cm^{-3}$. Remarkably, magnetotransport of the weak antilocalization effect (WAL) measurements confirm the existence of surface states up to a doping percentage of 2 at. % of Ga and coherence length values between 50-800 nm, which envisages the possibility of topological superconductivity in this material.
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Submitted 30 June, 2022;
originally announced June 2022.
Luminescent and Scintillating Properties of Lanthanum Fluoride Nanocrystals in Response to Gamma/Neutron Irradiation: Codoping with Ce Activator, Yb Wavelength Shifter, and Gd Neutron Captor
Authors:
José M. Vargas,
Juan Jerónimo Blostein,
Iván Sidelnik,
David Rondón Brito,
Luis A. Rodríguez Palomino,
Roberto E. Mayer
Abstract:
A novel concept for detection and spectroscopy of gamma rays, and detection of thermal neutrons based on codoped lanthanum fluoride nanocrystals containing gadolinium is presented.The trends of colloidal synthesis of the mentioned material, LaF3 co-doped with Ce as the activator, Yb as the wavelength-shifter and Gd as the neutron captor, is reported. Nanocrystals of the mentioned material were cha…
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A novel concept for detection and spectroscopy of gamma rays, and detection of thermal neutrons based on codoped lanthanum fluoride nanocrystals containing gadolinium is presented.The trends of colloidal synthesis of the mentioned material, LaF3 co-doped with Ce as the activator, Yb as the wavelength-shifter and Gd as the neutron captor, is reported. Nanocrystals of the mentioned material were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), optical absorption, and photoluminescence spectroscopy. Gamma detection and its potential spectroscopy feature have been confirmed. The neutron detection capability has been confirmed by experiments performed using a 252Cf neutron source.
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Submitted 14 April, 2016;
originally announced April 2016.
