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Nitrogen-Vacancy Centers in Epitaxial Laterally Overgrown Diamond: Towards Up-scaling of Color Center-based Quantum Technologies
Authors:
Nimba Oshnik,
Sebastian Westrich,
Nina Burmeister,
Oliver Roman Opaluch,
Lahcene Mehmel,
Riadh Issaoui,
Alexandre Tallaire,
Ovidiu Brinza,
Jocelyn Achard,
Elke Neu
Abstract:
Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g., via their reaction to stress. In this work, we inv…
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Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g., via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of microseconds, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal strain in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes.
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Submitted 2 April, 2025; v1 submitted 20 January, 2025;
originally announced January 2025.
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All-Optical Nuclear Quantum Sensing using Nitrogen-Vacancy Centers in Diamond
Authors:
Beat Bürgler,
Tobias F. Sjolander,
Ovidiu Brinza,
Alexandre Tallaire,
Jocelyn Achard,
Patrick Maletinsky
Abstract:
Solid state spins have demonstrated significant potential in quantum sensing with applications including fundamental science, medical diagnostics and navigation. The quantum sensing schemes showing best performance under ambient conditions all utilize microwave or radio-frequency driving, which poses a significant limitation for miniaturization, energy-efficiency and non-invasiveness of quantum se…
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Solid state spins have demonstrated significant potential in quantum sensing with applications including fundamental science, medical diagnostics and navigation. The quantum sensing schemes showing best performance under ambient conditions all utilize microwave or radio-frequency driving, which poses a significant limitation for miniaturization, energy-efficiency and non-invasiveness of quantum sensors. We overcome this limitation by demonstrating a purely optical approach to coherent quantum sensing. Our scheme involves the $^{15}$N nuclear spin of the Nitrogen-Vacancy (NV) center in diamond as a sensing resource, and exploits NV spin dynamics in oblique magnetic fields near the NV's excited state level anti-crossing to optically pump the nuclear spin into a quantum superposition state. We demonstrate all-optical free-induction decay measurements - the key protocol for low-frequency quantum sensing - both on single spins and spin ensembles. Our results pave the way for highly compact quantum sensors to be employed for magnetometry or gyroscopy applications in challenging environments.
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Submitted 14 December, 2022;
originally announced December 2022.
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Optimizing synthetic diamond samples for quantum sensing technologies by tuning the growth temperature
Authors:
S. Chouaieb,
L. J. Martínez,
W. Akhtar,
I. Robert-Philip,
A. Dréau,
O. Brinza,
J. Achard,
A. Tallaire,
V. Jacques
Abstract:
Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is significantly improved when the CVD growth temperature is decreased. This effect is then combined with temperature-…
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Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is significantly improved when the CVD growth temperature is decreased. This effect is then combined with temperature-dependent incorporation of NV defects during the CVD growth to obtain preferential alignment over dense ensembles of NV defects spatially localized in thin diamond layers. These results demonstrate that growth temperature can be exploited as an additional degree of freedom to engineer optimized diamond samples for quantum sensing applications.
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Submitted 29 June, 2018;
originally announced June 2018.
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Preferential orientation of NV defects in CVD diamond films grown on (113) substrates
Authors:
M. Lesik,
T. Plays,
A. Tallaire,
J. Achard,
O. Brinza,
L. William,
M. Chipaux,
L. Toraille,
T. Debuisschert,
A. Gicquel,
J. F. Roch,
V. Jacques
Abstract:
Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15-50 μm/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Electro…
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Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15-50 μm/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Electron spin resonance measurements were carried out to determine NV centers orientation and concluded that one specific orientation has an occurrence probability of 73 % when (100)-grown layers show an equal distribution in the 4 possible directions. A spin coherence time of around 270 μs was measured which is equivalent to that reported for material with similar isotopic purity. Although a higher degree of preferential orientation was achieved with (111)-grown layers (almost 100 %), the ease of growth and post-processing of the (113) orientation make it a potentially useful material for magnetometry or other quantum mechanical applications.
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Submitted 14 April, 2015; v1 submitted 8 April, 2015;
originally announced April 2015.
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Temperature dependent creation of nitrogen-vacancy centers in CVD diamond layers
Authors:
A. Tallaire,
M. Lesik,
V. Jacques,
S. Pezzagna,
V. Mille,
O. Brinza,
J. Meijer,
B. Abel,
J. -F. Roch,
A. Gicquel,
J. Achard
Abstract:
In this work, we explore the ability of plasma assisted chemical vapor deposition (PACVD) operating under high power densities to produce thin high-quality diamond layers with a controlled doping with negatively-charged nitrogen-vacancy (NV-) centers. This luminescent defect possesses specific physical characteristics that make it suitable as an addressable solid-state electron spin for measuring…
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In this work, we explore the ability of plasma assisted chemical vapor deposition (PACVD) operating under high power densities to produce thin high-quality diamond layers with a controlled doping with negatively-charged nitrogen-vacancy (NV-) centers. This luminescent defect possesses specific physical characteristics that make it suitable as an addressable solid-state electron spin for measuring magnetic fields with unprecedented sensitivity. To this aim, a relatively large number of NV- centers (> 10^12 cm^-3) should ideally be located in a thin diamond layer (a few tens of nm) close to the surface which is particularly challenging to achieve with the PACVD technique. Here we show that intentional temperature variations can be exploited to tune NV- creation efficiency during growth, allowing engineering complex stacking structures with a variable doping. Because such a temperature variation can be performed quickly and without any change of the gas phase composition, thin layers can be grown. Measurements show that despite the temperature variations, the luminescent centers incorporated using this technique exhibit spin coherence properties similar to those reached in ultra-pure bulk crystals, which suggests that they could be successfully employed in magnetometry applications.
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Submitted 6 October, 2014; v1 submitted 29 September, 2014;
originally announced September 2014.
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Self-propagating high-temperature synthesis of boron subphosphide, B12P2
Authors:
Vladimir A. Mukhanov,
Petr S. Sokolov,
Ovidiu Brinza,
Dominique Vrel,
Vladimir L. Solozhenko
Abstract:
Two new methods to produce nanopowders of B12P2 boron subphosphide by self-propagating high-temperature synthesis have been proposed. Bulk polycrystalline B12P2 with microhardness of HV = 35(3) GPa and stability in air up to 1300 K has been prepared by sintering these powders at 5.2 GPa and 2500 K.
Two new methods to produce nanopowders of B12P2 boron subphosphide by self-propagating high-temperature synthesis have been proposed. Bulk polycrystalline B12P2 with microhardness of HV = 35(3) GPa and stability in air up to 1300 K has been prepared by sintering these powders at 5.2 GPa and 2500 K.
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Submitted 23 February, 2014;
originally announced February 2014.
