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arXiv:2202.07495
[pdf]
cond-mat.mtrl-sci
cond-mat.mes-hall
physics.app-ph
physics.chem-ph
physics.optics
Laser-patterned submicron Bi2Se3-WS2 pixels with tunable circular polarization at room temperature
Authors:
Zachariah Hennighausen,
Darshana Wickramaratne,
Kathleen M. McCreary,
Bethany M. Hudak,
Todd Brintlinger,
Hsun-Jen Chuang,
Mehmet A. Noyan,
Berend T. Jonker,
Rhonda M. Stroud,
Olaf M. vant Erve
Abstract:
Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence…
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Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence (PL) intensity (factor of x161), peak position (38.4meV range), circular polarization (39.4% range), and valley polarization of a Bi2Se3-WS2 2D heterostructure using a low-power laser (0.762uW) in ambient. Changes are spatially confined to the laser spot, enabling submicron (814nm) features, and are long-term stable (>334 days). PL and valley polarization changes can be controllably reversed through laser exposure in vacuum, allowing the material to be erased and reused. Atmospheric experiments and first-principles calculations indicate oxygen diffusion modulates the exciton radiative vs. non-radiative recombination pathways, where oxygen absorption leads to brightening, and desorption to darkening.
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Submitted 15 February, 2022;
originally announced February 2022.
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Two-dimensional charge order stabilized in clean polytype heterostructures
Authors:
Suk Hyun Sung,
Noah Schnitzer,
Steve Novakov,
Ismail El Baggari,
Xiangpeng Luo,
Jiseok Gim,
Nguyen M. Vu,
Zidong Li,
Todd B. Brintlinger,
Yu Liu,
Wenjian Lu,
Yuping Sun,
Parag Deotare,
Kai Sun,
Liuyan Zhao,
Lena F. Kourkoutis,
John T. Heron,
Robert Hovden
Abstract:
Compelling evidence suggests distinct correlated electron behavior may exist only in clean 2D materials such as 1T-TaS2. Unfortunately, experiment and theory suggest that extrinsic disorder in free standing 2D layers disrupts correlation-driven quantum behavior. Here we demonstrate a route to realizing fragile 2D quantum states through endotaxial polytype engineering of van der Waals materials. Th…
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Compelling evidence suggests distinct correlated electron behavior may exist only in clean 2D materials such as 1T-TaS2. Unfortunately, experiment and theory suggest that extrinsic disorder in free standing 2D layers disrupts correlation-driven quantum behavior. Here we demonstrate a route to realizing fragile 2D quantum states through endotaxial polytype engineering of van der Waals materials. The true isolation of 2D charge density waves (CDWs) between metallic layers stabilizes commensurate long-range order and lifts the coupling between neighboring CDW layers to restore mirror symmetries via interlayer CDW twinning. The twinned-commensurate charge density wave (tC-CDW) reported herein has a single metal--insulator phase transition at ~350 K as measured structurally and electronically. Fast in-situ transmission electron microscopy and scanned nanobeam diffraction map the formation of tC-CDWs. This work introduces endotaxial polytype engineering of van der Waals materials to access latent 2D ground states distinct from conventional 2D fabrication.
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Submitted 20 January, 2022; v1 submitted 17 February, 2021;
originally announced February 2021.
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Enabling remote quantum emission in 2D semiconductors via porous metallic networks
Authors:
Jose J. Fonseca,
Andrew L. Yeats,
Brandon Blue,
Maxim Zalalutdinov,
Todd Brintlinger,
Blake S. Simpkins,
Daniel C. Ratchford,
James C. Culbertson,
Joel Q. Grim,
Samuel G. Carter,
Masa Ishigami,
Rhonda M. Stroud,
Cory Cress,
Jeremy T. Robinson
Abstract:
The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in…
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The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in a 'reverse epitaxial' process where initially nanocrystalline Au films become highly textured and in close crystallographic registry to the 2D crystal overlayer. With continued annealing, the metal underlayer dewets to form an oriented pore enabled network (OPEN) film in which the 2DC overlayer remains suspended above or coats the inside of the metal pores. This OPEN film geometry supports SPPs launched by either direct laser excitation or by light emitted from the TMD semiconductor itself, where energy in-coupling and out-coupling occurs at the metal pore sites such that dielectric spacers between the metal and 2DC layer are unnecessary. At low temperatures a high density of single-photon emitters (SPEs) is present across an OPEN-WSe2 film, and we demonstrate non-local excitation of SPEs at a distance of 17 μm with minimal loss of photon purity. Our results suggest the OPEN film geometry is a versatile platform that could facilitate the use of layered materials in quantum optics systems.
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Submitted 16 December, 2019;
originally announced December 2019.
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The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2
Authors:
Kathleen M. McCreary,
Aubrey T. Hanbicki,
Simranjeet Singh,
Roland K. Kawakami,
Glenn G. Jernigan,
Masa Ishigami,
Amy Ng,
Todd H. Brintlinger,
Rhonda M. Stroud,
Berend T. Jonker
Abstract:
We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). I…
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We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). In the case of CVD growth on Si/SiO2, following transfer to fresh Si/SiO2 there is a ~50 meV shift of the ground state exciton to higher emission energy in both photoluminescence emission and optical reflection. This shift is indicative of a reduction in tensile strain by ~0.25%. Additionally, the excitonic state in x-WS2 is easily modulated between neutral and charged exciton by exposure to moderate laser power, while such optical control is absent in as-WS2 for all growth substrates investigated. Finally, we observe dramatically different laser power-dependent behavior for as-grown and transferred WS2. These results demonstrate a strong sensitivity to sample preparation that is important for both a fundamental understanding of these novel materials as well as reliable reproduction of device properties.
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Submitted 21 October, 2016;
originally announced October 2016.
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Direct observation of the ice rule in artificial kagome spin ice
Authors:
Yi Qi,
T. Brintlinger,
John Cumings
Abstract:
Recently, significant interest has emerged in fabricated systems that mimic the behavior of geometrically-frustrated materials. We present the full realization of such an artificial spin ice system on a two-dimensional kagome lattice and demonstrate rigid adherence to the local ice rule by directly counting individual pseudo-spins. The resulting spin configurations show not only local ice rules…
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Recently, significant interest has emerged in fabricated systems that mimic the behavior of geometrically-frustrated materials. We present the full realization of such an artificial spin ice system on a two-dimensional kagome lattice and demonstrate rigid adherence to the local ice rule by directly counting individual pseudo-spins. The resulting spin configurations show not only local ice rules and long-range disorder, but also correlations consistent with spin ice Monte Carlo calculations. Our results suggest that dipolar corrections are significant in this system, as in pyrochlore spin ice, and they open a door to further studies of frustration in general.
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Submitted 31 January, 2008;
originally announced February 2008.
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Electron Thermal Microscopy
Authors:
Todd Brintlinger,
Yi Qi,
Kamal H. Baloch,
David Goldhaber-Gordon,
John Cumings
Abstract:
The progress of semiconductor electronics toward ever-smaller length scales and associated higher power densities brings a need for new high-resolution thermal microscopy techniques. Traditional thermal microscopy is performed by detecting infrared radiation with far-field optics, where the resolution is limited by the wavelength of the light. By adopting a serial, local-probe approach, near-fie…
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The progress of semiconductor electronics toward ever-smaller length scales and associated higher power densities brings a need for new high-resolution thermal microscopy techniques. Traditional thermal microscopy is performed by detecting infrared radiation with far-field optics, where the resolution is limited by the wavelength of the light. By adopting a serial, local-probe approach, near-field and scanned-probe microscopies can surpass this limit but sacrifice imaging speed. In the same way that electron microscopy was invented to overcome the resolution limits of light microscopy, we here demonstrate a thermal imaging technique that uses an electron microscope to overcome the limits of infrared thermal microscopy, without compromising imaging speed. With this new technique, which we call electron thermal microscopy, temperature is resolved by detecting the liquid-solid transition of arrays of nanoscale islands, producing thermal maps in real-time (30 thermal images per second over a 16um^2 field-of-view). The experimental demonstration is supported by combined electrical and thermal modeling.
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Submitted 20 August, 2007; v1 submitted 10 August, 2007;
originally announced August 2007.
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High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates
Authors:
B. M. Kim,
T. Brintlinger,
E. Cobas,
Haimei Zheng,
M. S. Fuhrer,
Z. Yu,
R. Droopad,
J. Ramdani,
K. Eisenbeiser
Abstract:
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increas…
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Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.
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Submitted 28 January, 2004;
originally announced January 2004.
