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Photoelectron diffraction of twisted bilayer graphene
Authors:
S. Tricot,
H. Ikeda,
H. -C. Tchouekem,
J. -C. Le Breton,
S. Yasuda,
P. Krüger,
P. Le Fèvre,
D. Sébilleau,
T. Jaouen,
P. Schieffer
Abstract:
Photoelectron diffraction (PED) is a powerful spectroscopic technique that combines elemental resolution with a high sensitivity to the local atomic arrangement at crystal surfaces, thus providing unique fingerprints of selected atomic sites in matter. Stimulated by the rapid innovation in the development of various analysis methods for probing the atomic and electronic structures of van der Waals…
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Photoelectron diffraction (PED) is a powerful spectroscopic technique that combines elemental resolution with a high sensitivity to the local atomic arrangement at crystal surfaces, thus providing unique fingerprints of selected atomic sites in matter. Stimulated by the rapid innovation in the development of various analysis methods for probing the atomic and electronic structures of van der Waals (vdW) heterostructures of two-dimensional materials, we present a theoretical assessment of the capacity of PED for extracting structural properties such as stacking, twist angles and interlayer distances. We provide a complete description of PED for the benchmark vdW heterostructure bilayer graphene (BLG), by calculating and analyzing the PED of BLG in Bernal and AA-stacking as well as twisted BLG for a wide range of the twist angle.
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Submitted 8 November, 2024;
originally announced November 2024.
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Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
Authors:
C. Cerqueira,
J. Y. Qin,
H. Dang,
A. Djeffal,
J. -C. Le Breton,
M. Hehn,
J. -C. Rojas-Sanchez,
X. Devaux,
S. Suire,
S. Migot,
P. Schieffer,
J. -G. Mussot,
P. Laczkowski,
A. Anane,
S. Petit-Watelot,
M. Stoffel,
S. Mangin,
Z. Liu,
B. W. Cheng,
X. F. Han,
H. Jaffrès,
J. -M. George,
Y. Lu
Abstract:
Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in…
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Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2μm in n-type Si at room temperature. In those experiments, a pure propagating spin-current is generated via ferromagnetic resonance spin-pumping and converted into a measurable voltage by using the inverse spin-Hall effect occurring in the top Pt layer. A systematic study by varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO/Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO/Si interface states appears to be a prerequisite to establish the necessary out-of-equilibrium spin-population in Si under the spin-pumping action.
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Submitted 10 February, 2019;
originally announced February 2019.
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Strain and Magnetic Field Induced Spin-Structure Transitions in Multiferroic BiFeO3
Authors:
A. Agbelele,
D. Sando,
C. Toulouse,
C. Paillard,
R. D. Johnson,
R. Ruffer,
A. F. Popkov,
C. Carretero,
P. Rovillain,
J. -M. Le Breton,
B. Dkhil,
M. Cazayous,
Y. Gallais,
M. -A. Measson,
A. Sacuto,
P. Manuel,
A. K. Zvezdin,
A. Barthelemy,
J. Juraszek,
M. Bibes
Abstract:
The magnetic-field-dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation of the Fe spins is found to be significantly lower than in the bulk, with appealing implications for field-controlled spintronic and magnonic devices.
The magnetic-field-dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation of the Fe spins is found to be significantly lower than in the bulk, with appealing implications for field-controlled spintronic and magnonic devices.
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Submitted 30 August, 2017;
originally announced August 2017.
