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Ferroelectricity of Wurtzite Al$_{1-x}$Hf$_{x}$N Heterovalent Alloys
Authors:
Nate S. P. Bernstein,
Daniel Drury,
Cheng-Wei Lee,
Tatau Shimada,
Yuki Sakai,
Oliver Rehm,
Lutz Baumgarten,
Martina Müller,
Prashun Gorai,
Yoshiki Iwazaki,
Glen R. Fox,
Keisuke Yazawa,
Brendan Hanrahan,
Geoff L. Brennecka
Abstract:
Thin films of aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single $c$-axis oriented wurtzite phase for all films. Hard X-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complemen…
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Thin films of aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single $c$-axis oriented wurtzite phase for all films. Hard X-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs. electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d$_{33,f,meas}$ measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent--and not just trivalent--alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices.
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Submitted 11 March, 2025;
originally announced March 2025.
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Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Authors:
Md Redwanul Islam,
Niklas Wolff,
Georg Schönweger,
Tom-Niklas Kreutzer,
Margaret Brown,
Maike Gremmel,
Patrik Straňák,
Lutz Kirste,
Geoff L. Brennecka,
Simon Fichtner,
Lorenz Kienle
Abstract:
This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping…
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This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, O-doped films showed almost a fourfold reduction of the leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude sub-coercive fields. Microstructure analysis using X-ray diffraction 1and scanning transmission electron microscopy (STEM) revealed no significant structural degradation of the bulk Al0.73Sc0.27N. In case of the maximum O-doped film, the c-axis out-of-plane texture increased by only 20% from 1.8° and chemical mapping revealed a uniform distribution of oxygen incorporation into the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al0.73Sc0.27N via the O-concentration, changing from nitrogen- to metal-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al0.73Sc0.27N without incurring any significant structural degradation of the bulk thin film quality, thereby making ferroelectric nitrides more suitable for microelectronic applications.
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Submitted 26 November, 2024;
originally announced November 2024.
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Combinatorial synthesis and characterization of thin film Al1-xRExN (RE = Pr3+, Tb3+) heterostructural alloys
Authors:
Binod Paudel,
John S. Mangum,
Christopher L. Rom,
Kingsley Egbo,
Cheng-Wei Lee,
Harvey Guthrey,
Sean Allen,
Nancy M. Haegel,
Keisuke Yazawa,
Geoff L. Brennecka,
Rebecca W. Smaha
Abstract:
The potential impact of cation-substituted AlN-based materials, such as Al1-xScxN, Al1-xGaxN, and Al1-xBxN, with exceptional electronic, electromechanical, and dielectric properties has spurred research into this broad family of materials. Rare earth (RE) cations are particularly appealing as they could additionally impart optoelectronic or magnetic functionality. However, success in incorporating…
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The potential impact of cation-substituted AlN-based materials, such as Al1-xScxN, Al1-xGaxN, and Al1-xBxN, with exceptional electronic, electromechanical, and dielectric properties has spurred research into this broad family of materials. Rare earth (RE) cations are particularly appealing as they could additionally impart optoelectronic or magnetic functionality. However, success in incorporating a significant level of RE cations into AlN has been limited so far because it is thermodynamically challenging to stabilize such heterostructural alloys. Using combinatorial co-sputtering, we synthesized Al1-xRExN (RE = Pr, Tb) thin films and performed a rapid survey of the composition-structure-property relationships as a function of RE alloying. Under our growth conditions, we observe that Al1-xPrxN maintains a phase-pure wurtzite structure until transitioning to amorphous for x>0.22. Al1-xTbxN exhibits a phase-pure wurtzite structure until x<0.15, then exhibits mixed wurtzite and rocksalt phases for 0.16<x<0.28, and finally becomes amorphous beyond that. Ellipsometry measurements reveal that the absorption onset decreases with increasing rare earth incorporation and has a strong dependence on the phases present. We observe the characteristic cathodoluminescence emission of Pr3+ and Tb3+, respectively. Using this synthesis approach, we have demonstrated incorporation of Pr and Tb into the AlN wurtzite structure up to higher compositions levels than previously reported and made the first measurements of corresponding structural and optoelectronic properties.
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Submitted 14 August, 2024;
originally announced August 2024.
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Low Leakage Ferroelectric Heteroepitaxial Al$_{0.7}$Sc$_{0.3}$N Films on GaN
Authors:
Keisuke Yazawa,
Charles Evans,
Elizabeth Dickey,
Brooks Tellekamp,
Geoff L. Brennecka,
Andriy Zakutayev
Abstract:
Wurtzite (Al,Sc)N ferroelectrics are attractive for microelectronics applications due to their chemical and epitaxial structural compatibility with wurtzite semiconductors such as GaN and (Al,Ga)N. However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Following the tradition of other semiconductor heterostructures, crystalline structural…
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Wurtzite (Al,Sc)N ferroelectrics are attractive for microelectronics applications due to their chemical and epitaxial structural compatibility with wurtzite semiconductors such as GaN and (Al,Ga)N. However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Following the tradition of other semiconductor heterostructures, crystalline structural quality, as measured by breadth of diffraction peaks and correlating with dislocation density, is commonly used as a proxy for leakage current, but we demonstrate here that the crystalline mosaicity that dominates the broadening of diffraction peaks in epitaxial Al$_{0.7}$Sc$_{0.3}$N stacks does not dominate leakage current. We report here well-saturated ferroelectric hysteresis loops and orders of magnitude lower leakage current (0.07 A cm$^{-2}$) compared to values reported in literature (1 ~ 19 A cm$^{-2}$) for sputter-deposited epitaxial Al$_{0.7}$Sc$_{0.3}$N/GaN of comparable crystalline quality to prior reports. Further, we show Al$_{0.7}$Sc$_{0.3}$N on lattice-matched InGaN buffers with improved structural characteristics exhibits increased leakage characteristics. This demonstration and understanding can help to guide further efforts towards reliable wurtzite ferroelectric devices and prioritize approaches targeting further leakage current reduction.
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Submitted 19 July, 2024;
originally announced July 2024.
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From Prediction to Experimental Realization of Ferroelectric Wurtzite Al$_{1-x}$Gd$_{x}$N Alloys
Authors:
Cheng-Wei Lee,
Rebecca W. Smaha,
Geoff L. Brennecka,
Nancy Haegel,
Prashun Gorai,
Keisuke Yazawa
Abstract:
AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors such as Si, SiC and III-Vs, enabling compute-in-memory archite…
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AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors such as Si, SiC and III-Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al$_{1-x}$Gd$_x$N alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction $x$ of $x>$ 0.10$-$0.15. Experimentally, ferroelectric switching is observed at room temperature in Al$_{1-x}$Gd$_x$N films with $x>$ 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously (Lee et al., $\textit{Science Advances}$ 10, eadl0848, 2024). This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.
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Submitted 15 July, 2024;
originally announced July 2024.
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Defects and Oxygen Impurities in Ferroelectric Wurtzite Al$_{1-x}$Sc$_x$N Alloys
Authors:
Naseem Ud Din,
Cheng-Wei Lee,
Geoff L. Brennecka,
Prashun Gorai
Abstract:
III-nitrides and related alloys are widely used for optoelectronics and as acoustic resonators. Ferroelectric wurtzite nitrides are of particular interest because of their potential for direct integration with Si and wide bandgap semiconductors, and unique polarization switching characteristics; such interest has taken off since the first report of ferroelectric Al$_{1-x}$Sc$_x$N alloys. However,…
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III-nitrides and related alloys are widely used for optoelectronics and as acoustic resonators. Ferroelectric wurtzite nitrides are of particular interest because of their potential for direct integration with Si and wide bandgap semiconductors, and unique polarization switching characteristics; such interest has taken off since the first report of ferroelectric Al$_{1-x}$Sc$_x$N alloys. However, the coercive fields needed to switch polarization are on the order of MV/cm, which is 1-2 orders of magnitude larger than oxide perovskite ferroelectrics. Atomic-scale point defects are known to impact the dielectric properties, including breakdown fields and leakage currents, as well as ferroelectric switching. However, very little is known about the native defects and impurities in Al$_{1-x}$Sc$_x$N, and their effect on the dielectric properties. In this study, we use first-principles calculations to determine the formation energetics of native defects and unintentional oxygen incorporation in Al$_{1-x}$Sc$_x$N. We find that nitrogen vacancies are the dominant native defects, and that they introduce multiple mid-gap states that can lead to premature dielectric breakdown in ferroelectrics and carrier recombination in optoelectronics. Growth under N-rich conditions will reduce the concentration of these deep defects. We also investigate unintentional oxygen incorporation on the nitrogen site and find that the substitutional defect is present in high concentrations, which can contribute to increased temperature-activated leakage currents. Our findings provide fundamental understanding of the defect physics in Al$_{1-x}$Sc$_x$N alloys, which is critical for future deployment of ferroelectric devices.
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Submitted 28 August, 2023;
originally announced August 2023.
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Anomalously Abrupt Switching of Ferroelectric Wurtzites
Authors:
Keisuke Yazawa,
John Hayden,
Jon-Paul Maria,
Wanlin Zhu,
Susan Trolier-McKinstry,
Andriy Zakutayev,
Geoff L. Brennecka
Abstract:
Ferroelectric polarization switching is one common example of a process that occurs via nucleation and growth, and understanding switching kinetics is crucial for applications such as ferroelectric memory. Here we describe and interpret anomalous switching dynamics in the wurtzite nitride thin film ferroelectrics Al0.7Sc0.3N and Al0.94B0.06N using a general model that can be directly applied to ot…
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Ferroelectric polarization switching is one common example of a process that occurs via nucleation and growth, and understanding switching kinetics is crucial for applications such as ferroelectric memory. Here we describe and interpret anomalous switching dynamics in the wurtzite nitride thin film ferroelectrics Al0.7Sc0.3N and Al0.94B0.06N using a general model that can be directly applied to other abrupt transitions that proceed via nucleation and growth. When substantial growth and impingement occur while nucleation rate is increasing, such as in these wurtzite ferroelectrics under high electric fields, abrupt polarization reversal leads to very large Avrami coefficients (e.g., n = 11), inspiring an extension of the KAI (Kolmogorov-Avrami-Ishibashi) model. We apply this extended model to two related but distinct scenarios that crossover between (typical) behavior described by sequential nucleation and growth and a more abrupt transition arising from significant growth prior to peak nucleation rate. This work therefore provides more complete description of general nucleation and growth kinetics applicable to any system while specifically addressing both the anomalously abrupt polarization reversal behavior in new wurtzite ferroelectrics.
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Submitted 10 March, 2023;
originally announced March 2023.
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On the thermal and mechanical properties of Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O across the high-entropy to entropy-stabilized transition
Authors:
Christina M. Rost,
Daniel L. Schmuckler,
Clifton Bumgardner,
Md Shafkat Bin Hoque,
David R. Diercks,
John T. Gaskins,
Jon-Paul Maria,
Geoffrey L. Brennecka,
Xiadong Li,
Patrick E. Hopkins
Abstract:
As various property studies continue to emerge on high entropy and entropy-stabilized ceramics, we seek further understanding of property changes across the phase boundary between \enquote{high-entropy} and \enquote{entropy-stabilized}. The thermal and mechanical properties of bulk ceramic entropy stabilized oxide composition Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O are investigated acr…
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As various property studies continue to emerge on high entropy and entropy-stabilized ceramics, we seek further understanding of property changes across the phase boundary between \enquote{high-entropy} and \enquote{entropy-stabilized}. The thermal and mechanical properties of bulk ceramic entropy stabilized oxide composition Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O are investigated across this critical transition temperature via the transient plane-source method, temperature-dependent X-ray diffraction, and nano-indentation. Thermal conductivity remains constant within uncertainty across the multi-to-single phase transition at a value of ~2.5 W/mK, while the linear coefficient of thermal expansion increases nearly 24 % from 10.8 to 14.1 x 10$^{-6}$ K$^{-1}$. Mechanical softening is also observed across the transition.
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Submitted 27 November, 2022;
originally announced November 2022.
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A Landau-Devonshire Analysis of Strain Effects on Ferroelectric Al1-xScxN
Authors:
Keisuke Yazawa,
Andriy Zakutayev,
Geoff L. Brennecka
Abstract:
We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials using the classic Landau-Devonshire approach. The electrostrictive and dielectric stiffness coefficients of Al1-xScxN with wurtzite structure (6mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first order phase transition based on the dielectric…
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We present a thermodynamic analysis of the recently discovered nitride ferroelectric materials using the classic Landau-Devonshire approach. The electrostrictive and dielectric stiffness coefficients of Al1-xScxN with wurtzite structure (6mm) are determined using a free energy density function assuming a hexagonal parent phase (6/mmm), with the first order phase transition based on the dielectric stiffness relationships. The results of this analysis show that the strain sensitivity of the energy barrier is one order of magnitude larger than that of the spontaneous polarization in these novel wurtzite ferroelectrics, yet both are less sensitive to strain compared to classic perovskite ferroelectrics. These analysis results reported here explain experimentally reported sensitivity of coercive field to elastic strain/stress in Al1-xScxN films, and would enable further thermodynamic analysis via phase field simulation and related methods.
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Submitted 4 May, 2022;
originally announced May 2022.
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Ionic Bonds Control Ferroelectric Behavior in Wurtzite Nitrides
Authors:
Keisuke Yazawa,
John Mangum,
Prashun Gorai,
Geoff L. Brennecka,
Andriy Zakutayev
Abstract:
Ferroelectricity enables key integrated technologies from non-volatile memory to precision ultrasound. Wurtzite ferroelectric Al1-xScxN has recently attracted attention because of its robust ferroelectricity and Si process compatibility in addition to being the first known ferroelectric wurtzite. However, the origin and control of ferroelectricity in wurtzite materials is not yet fully understood.…
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Ferroelectricity enables key integrated technologies from non-volatile memory to precision ultrasound. Wurtzite ferroelectric Al1-xScxN has recently attracted attention because of its robust ferroelectricity and Si process compatibility in addition to being the first known ferroelectric wurtzite. However, the origin and control of ferroelectricity in wurtzite materials is not yet fully understood. Here we show that the local bond ionicity, rather than simply the change in tetrahedral distortion, is key to controlling the macroscopic ferroelectric response, according to our coupled experimental and computational results. Across the composition gradient in Sc < 0.35 range and 140-260 nm thickness in combinatorial thin films of Al1-xScxN, the pure wurtzite phase exhibits a similar c/a ratio regardless of the Sc content, due to elastic interaction with neighboring crystals. The coercive field and spontaneous polarization significantly decrease with increasing Sc content despite this invariant c/a ratio, due to the more ionic bonding nature of Sc-N relative to the more covalent Al-N bonds, supported by DFT calculations. Based on these insights, ionicity engineering is introduced as an approach to reduce coercive field of Al1-xScxN for memory and other applications and to control ferroelectric properties in other wurtzites.
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Submitted 4 May, 2022;
originally announced May 2022.
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Improving Reproducibility of Sputter Deposited Ferroelectric Wurtzite Al0.6Sc0.4N Films using In-situ Optical Emission Spectrometry
Authors:
Daniel Drury,
Keisuke Yazawa,
Allison Mis,
Kevin Talley,
Andriy Zakutayev,
Geoff L. Brennecka
Abstract:
High-Sc Al1-xScxN thin films are of tremendous interest because of their attractive piezoelectric and ferroelectric properties, but overall film quality and reproducibility are widely reported to suffer as x increases. In this study, we correlate the structure and electrical properties of Al0.6Sc0.4N with in-situ observations of glow discharge optical emission during growth. This in-situ technique…
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High-Sc Al1-xScxN thin films are of tremendous interest because of their attractive piezoelectric and ferroelectric properties, but overall film quality and reproducibility are widely reported to suffer as x increases. In this study, we correlate the structure and electrical properties of Al0.6Sc0.4N with in-situ observations of glow discharge optical emission during growth. This in-situ technique uses changes in the Ar(I) and N2(I) emission lines of the glow discharge during growth to identify films that subsequently exhibit unacceptable structural and electrical performance. We show that a steady deposition throughout film growth produces ferroelectric Al0.6Sc0.4N with a reversible 80 μC cm-1 polarization and 3.1 MV cm-1 coercive field. In other films deposited using identical settings, fluctuations in both Ar(I) and N2(I) line intensities correspond to decreased wurtzite phase purity, nm-scale changes to the film microstructure, and a non-ferroelectric response. These results illustrate the power of optical emission spectroscopy for tracking changes when fabricating process-sensitive samples such as high-Sc Al1-xScxN films.
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Submitted 21 January, 2021;
originally announced January 2021.
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Reduced Coercive Field in Epitaxial Thin Film of Ferroelectric Wurtzite Al0.7Sc0.3N
Authors:
Keisuke Yazawa,
Daniel Drury,
Andriy Zakutayev,
Geoff L. Brennecka
Abstract:
The first epitaxial ferroelectric wurtzite film with clear polarization-electric field hysteresis behavior is presented. The coercive field of this epitaxial Al0.7Sc0.3N film on W/c-sapphire substrate is 0.4 +- 0.3 MV cm-1 (8 %) smaller than that of a conventional fiber textured film on a Pt/TiOx/SiO2/Si substrate, attributed to the 0.01 +- 0.007 Å smaller c-axis lattice parameter in the epitaxial…
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The first epitaxial ferroelectric wurtzite film with clear polarization-electric field hysteresis behavior is presented. The coercive field of this epitaxial Al0.7Sc0.3N film on W/c-sapphire substrate is 0.4 +- 0.3 MV cm-1 (8 %) smaller than that of a conventional fiber textured film on a Pt/TiOx/SiO2/Si substrate, attributed to the 0.01 +- 0.007 Å smaller c-axis lattice parameter in the epitaxial film. The strain and decrease of the coercive field most likely originate from epitaxial strain rather than the mismatch in thermal coefficient of expansion. These results provide an insight for further coercive field reduction of novel wurtzite ferroelectrics using epitaxial mismatch strain.
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Submitted 17 January, 2021;
originally announced January 2021.
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Thin Film Growth Effects on Electrical Conductivity in Entropy Stabilized Oxides
Authors:
Valerie Jacobson,
Dave Diercks,
Bobby To,
Andriy Zakutayev,
Geoff Brennecka
Abstract:
Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leaving entropy-stabilized thin films relatively underexplored. Following an extensive multi-variable investigation of polycrystalline (Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)O thin films deposited via pulsed lase…
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Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leaving entropy-stabilized thin films relatively underexplored. Following an extensive multi-variable investigation of polycrystalline (Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)O thin films deposited via pulsed laser deposition (PLD), it is shown here that substrate temperature and deposition pressure have strong and repeatable effects on film texture and lattice parameter. Further analysis shows that films deposited at lower temperatures and under lower oxygen chamber pressure are $\sim$40x more electrically conductive than otherwise identical films grown at higher temperature and pressure. This electronic conductivity is hypothesized to be the result of polaron hopping mediated by transition metal valence changes which compensate for oxygen off-stoichiometry.
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Submitted 25 June, 2020;
originally announced June 2020.
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Synthesis of ferroelectric LaWN3 -- the first nitride perovskite
Authors:
Kevin R. Talley,
Craig L. Perkins,
David R. Diercks,
Geoff L. Brennecka,
Andriy Zakutayev
Abstract:
Next generation telecommunication technologies would benefit from strong piezoelectric and ferroelectric response in materials that are compatible with nitride radio-frequency electronic devices. Ferroelectric oxides with perovskite structure have been used in sensors and actuators for half a century, and halide perovskites transformed photovoltaics research in the past decade, but neither of them…
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Next generation telecommunication technologies would benefit from strong piezoelectric and ferroelectric response in materials that are compatible with nitride radio-frequency electronic devices. Ferroelectric oxides with perovskite structure have been used in sensors and actuators for half a century, and halide perovskites transformed photovoltaics research in the past decade, but neither of them is compatible with nitride semiconductors. Nitride perovskites, despite numerous computational predictions, have not been experimentally demonstrated and their properties remain unknown. Here we report the experimental realization of the first nitride perovskite: lanthanum tungsten nitride (LaWN3). Oxygen-free LaWN3 thin films in a polar perovskite structure are confirmed by spectroscopy, scattering, and microscopy techniques. Scanning probe measurements confirm a large piezoelectric response and strongly suggest ferroelectric behavior, making it the first stable nitride ferroelectric compound. These results should lead to integration of LaWN3 with nitride semiconductors for wireless telecommunication applications, while enabling synthesis of many other predicted nitride perovskites.
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Submitted 2 January, 2020;
originally announced January 2020.
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COMBIgor: data analysis package for combinatorial materials science
Authors:
Kevin R. Talley,
Sage R. Bauers,
Celeste L. Melamed,
Meagan C. Papac,
Karen Heinselman,
Imran Khan,
Dennice M. Roberts,
Valerie Jacobson,
Allison Mis,
Geoff L. Brennecka,
John D. Perkins,
Andriy Zakutayev
Abstract:
Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially-resolved characterization of structure and properties. Due to maturation of combinatorial methods and their successful application in many fields, the modern combinatorial laboratory produces diverse and complex data sets requiring advanced analysis and visualization techniques. I…
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Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially-resolved characterization of structure and properties. Due to maturation of combinatorial methods and their successful application in many fields, the modern combinatorial laboratory produces diverse and complex data sets requiring advanced analysis and visualization techniques. In order to utilize these large data sets to uncover new knowledge, the combinatorial scientist must engage in data science. For data science tasks, most laboratories adopt common-purpose data management and visualization software. However, processing and cross-correlating data from various measurement tools is no small task for such generic programs. Here we describe COMBIgor, a purpose-built open-source software package written in the commercial Igor Pro environment, designed to offer a systematic approach to loading, storing, processing, and visualizing combinatorial data sets. It includes (1) methods for loading and storing data sets from combinatorial libraries, (2) routines for streamlined data processing, and (3) data analysis and visualization features to construct figures. Most importantly, COMBIgor is designed to be easily customized by a laboratory, group, or individual in order to integrate additional instruments and data-processing algorithms. Utilizing the capabilities of COMBIgor can significantly reduce the burden of data management on the combinatorial scientist.
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Submitted 30 April, 2019; v1 submitted 16 April, 2019;
originally announced April 2019.
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Large Piezoelectric Response of van der Waals Layered Solids
Authors:
Sukriti Manna,
Prashun Gorai,
Geoff L. Brennecka,
Cristian V. Ciobanu,
Vladan Stevanović
Abstract:
The bulk piezoelectric response, as measured by the piezoelectric modulus tensor (\textbf{d}), is determined by a combination of charge redistribution due to strain and the amount of strain produced by the application of stress (stiffness). Motivated by the notion that less stiff materials could exhibit large piezoelectric responses, herein we investigate the piezoelectric modulus of van der Waals…
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The bulk piezoelectric response, as measured by the piezoelectric modulus tensor (\textbf{d}), is determined by a combination of charge redistribution due to strain and the amount of strain produced by the application of stress (stiffness). Motivated by the notion that less stiff materials could exhibit large piezoelectric responses, herein we investigate the piezoelectric modulus of van der Waals-bonded quasi-2D ionic compounds using first-principles calculations. From a pool of 869 known binary and ternary quasi-2D materials, we have identified 135 non-centrosymmetric crystals of which 48 systems are found to have \textbf{d} components larger than the longitudinal piezoelectric modulus of AlN (a common piezoelectric for resonators), and three systems with the response greater than that of PbTiO$_3$, which is among the materials with largest known piezoelectric modulus. None of the identified materials have previously been considered for piezoelectric applications. Furthermore, we find that large \textbf{d} components always couple to the deformations (shearing or axial) of van der Waals "gaps" between the layers and are indeed enabled by the weak intra-layer interactions.
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Submitted 29 April, 2018;
originally announced April 2018.
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Enhanced piezoelectric response of AlN via CrN alloying
Authors:
Sukriti Manna,
Kevin R. Talley,
Prashun Gorai,
John Mangum,
Andriy Zakutayev,
Geoff L. Brennecka,
Vladan Stevanović,
Cristian V. Ciobanu
Abstract:
Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. Herein, we report density functional theory calculations of structure and properties of the Cr-AlN system for Cr concentrations ranging past the wurtzite…
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Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. Herein, we report density functional theory calculations of structure and properties of the Cr-AlN system for Cr concentrations ranging past the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in Cr$_x$Al$_{1-x}$N alloys is the increase of the internal parameter $u$ of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we have found that Cr-AlN has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that Cr-AlN is a viable piezoelectric material whose properties can be tuned via Cr composition; we support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30\% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus $d_{33}$ is approximately four times larger than that of pure AlN. This finding, combined with the relative ease of synthesis, may propel Cr-AlN as the prime piezoelectric material for applications such as resonators and acoustic wave generators.
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Submitted 9 March, 2018; v1 submitted 1 August, 2017;
originally announced August 2017.
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Tuning the piezoelectric and mechanical properties of the AlN system via alloying with YN and BN
Authors:
Sukriti Manna,
Geoff L. Brennecka,
Vladan Stevanović,
Cristian V. Ciobanu
Abstract:
Recent advances in microelectromechanical systems often require multifunctional materials, which are designed so as to optimize more than one property. Using density functional theory calculations for alloyed nitride systems, we illustrate how co-alloying a piezoelectric material (AlN) with different nitrides helps tune both its piezoelectric and mechanical properties simultaneously. Wurtzite AlN-…
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Recent advances in microelectromechanical systems often require multifunctional materials, which are designed so as to optimize more than one property. Using density functional theory calculations for alloyed nitride systems, we illustrate how co-alloying a piezoelectric material (AlN) with different nitrides helps tune both its piezoelectric and mechanical properties simultaneously. Wurtzite AlN-YN alloys display increased piezoelectric response with YN concentration, accompanied by mechanical softening along the crystallographic c direction. Both effects increase the electromechanical coupling coefficients relevant for transducers and actuators. Resonator applications, however, require superior stiffness, thus leading to the need to decouple the increased piezoelectric response from a softened lattice. We show that co-alloying of AlN with YN and BN results in improved elastic properties while retaining most of the piezoelectric enhancements from YN alloying. This finding may lead to new avenues for tuning the design properties of piezoelectrics through composition-property maps.
Keywords: piezoelectricity, electromechanical coupling, density functional theory, co-alloying
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Submitted 11 August, 2017; v1 submitted 1 June, 2017;
originally announced June 2017.
