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Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films
Authors:
Lena N. Majer,
Tolga Acartürk,
Peter A. van Aken,
Wolfgang Braun,
Luca Camuti,
Johan Eckl-Haese,
Jochen Mannhart,
Takeyoshi Onuma,
Ksenia S. Rabinovich,
Darrell G. Schlom,
Sander Smink,
Ulrich Starke,
Jacob Steele,
Patrick Vogt,
Hongguang Wang,
Felix V. E. Hensling
Abstract:
Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the…
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Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties such as a single-crystal-like bandgap and a low density of F+ centers.
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Submitted 24 July, 2024;
originally announced July 2024.
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alpha-Ta Films on c-plane Sapphire with Enhanced Microstructure
Authors:
Lena N. Majer,
Sander Smink,
Wolfgang Braun,
Bernhard Fenk,
Varun Harbola,
Benjamin Stuhlhofer,
Hongguang Wang,
Peter A. van Aken,
Jochen Mannhart,
Felix V. E. Hensling
Abstract:
Superconducting films of alpha-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, alpha-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We have therefore explored a new synthesis method for alpha-Ta films which allows the growth of these films with unprecedented quality. Using this method, high qua…
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Superconducting films of alpha-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, alpha-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We have therefore explored a new synthesis method for alpha-Ta films which allows the growth of these films with unprecedented quality. Using this method, high quality alpha-Ta films are deposited at a comparably high substrate temperature of 1150 C. They are single-phase alpha-Ta and have a single out-of-plane (110) orientation. They consist of grains above 2 um that have one of three possible in-plane orientations. As shown by scanning transmission electron microscopy and electron energy loss studies the substrate-film interfaces are sharp with no observable intermixing. The obtained insights into the epitaxial growth of body-centered-cubic films on quasi-hexagonal substrates lay the basis for harnessing the high structural coherence of such films in various applications.
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Submitted 23 July, 2024;
originally announced July 2024.
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Adsorption-controlled epitaxy of perovskites
Authors:
Wolfgang Braun
Abstract:
I propose to use laser heating both for the substrate and the thermal evaporation sources in a vacuum chamber operating at pressures from XHV to values where the mean free path of the particles approaches or slightly exceeds the source-substrate distance. The concept combines the advantages of the molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) methods to allow ultrapure deposition…
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I propose to use laser heating both for the substrate and the thermal evaporation sources in a vacuum chamber operating at pressures from XHV to values where the mean free path of the particles approaches or slightly exceeds the source-substrate distance. The concept combines the advantages of the molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) methods to allow ultrapure deposition with continuous stoichiometry variation at high background pressures of arbitrary gases or molecular beams. Theory and preliminary experiments suggest that this setup is capable of growing complex oxides such as SrTiO$_3$ in the adsorption-controlled regime, similar to GaAs, in a background of molecular oxygen. This regime is neither accessible to MBE nor to PLD, making this laser epitaxy approach a unique tool to explore new growth regimes with the potential to fabricate structures such as modulation-doped heterostructures with low levels of background impurities that are impossible to synthesize with the current techniques. The technological simplicity and exceedingly compact size of the deposition chamber enable easy and rapid switching between different materials systems and the efficient synthesis of new materials that involve corrosive constituents. In contrast to PLD, the method may be scaled in a straightforward manner to large substrate sizes, providing a direct path from research to mass production.
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Submitted 7 May, 2024;
originally announced May 2024.
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Thermal laser evaporation of elements from across the periodic table
Authors:
Thomas J. Smart,
Jochen Mannhart,
Wolfgang Braun
Abstract:
We propose and demonstrate that thermal laser evaporation can be applied to all solid, non-radioactive elements in the periodic table. By depositing thin films, we achieve growth rates exceeding 1 angstrom/s with output laser powers less than 500 W, using identical beam parameters for many different elements. The source temperature is found to vary linearly with laser power within the examined pow…
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We propose and demonstrate that thermal laser evaporation can be applied to all solid, non-radioactive elements in the periodic table. By depositing thin films, we achieve growth rates exceeding 1 angstrom/s with output laser powers less than 500 W, using identical beam parameters for many different elements. The source temperature is found to vary linearly with laser power within the examined power range. High growth rates are possible using free-standing sources for most of the elements tested, eliminating the need for crucibles.
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Submitted 23 March, 2021;
originally announced March 2021.
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High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures
Authors:
Arnaud P. Nono Tchiomo,
Wolfgang Braun,
Bryan P. Doyle,
Wilfried Sigle,
Peter van Aken,
Jochen Mannhart,
Prosper Ngabonziza
Abstract:
By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mobility of 140 cm$^2$ V$^{-1}\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations…
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By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mobility of 140 cm$^2$ V$^{-1}\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\times 10^{9}$ cm$^{-2}$ for buffered films prepared on (110) TbScO$_3$ substrates by pulsed laser deposition.
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Submitted 29 March, 2019; v1 submitted 27 March, 2019;
originally announced March 2019.
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Magnetic Properties of Epitaxially-grown $SrRuO_3$ Nanodots
Authors:
Gennadii Laskin,
Hongguang Wang,
Hans Boschker,
Wolfgang Braun,
Vesna Srot,
Peter A. van Aken,
Jochen Mannhart
Abstract:
We present the fabrication and exploration of arrays of nanodots of $SrRuO_3$ with dot sizes between 500 nm and 15 nm. Down to the smallest dot size explored, the samples were found to be magnetic with a maximum of the Curie temperature $T_C$ achieved by dots of 30 nm diameter. This peak in $T_C$ is associated with a dot-size-induced relief of the epitaxial strain, as evidenced by scanning transmi…
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We present the fabrication and exploration of arrays of nanodots of $SrRuO_3$ with dot sizes between 500 nm and 15 nm. Down to the smallest dot size explored, the samples were found to be magnetic with a maximum of the Curie temperature $T_C$ achieved by dots of 30 nm diameter. This peak in $T_C$ is associated with a dot-size-induced relief of the epitaxial strain, as evidenced by scanning transmission electron microscopy.
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Submitted 1 February, 2019;
originally announced February 2019.
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Independence of surface morphology and reconstruction during the thermal preparation of perovskite oxide surfaces
Authors:
Maren Jäger,
Ali Teker,
Jochen Mannhart,
Wolfgang Braun
Abstract:
Using a CO$_2$ laser to directly heat the crystals from the back side, SrTiO$_3$ substrates may be thermally prepared in situ for epitaxy without the need for ex-situ etching and annealing. We find that the formation of large terraces with straight steps at 900-1100 °C is independent from the formation of the ideal surface reconstruction for epitaxy, which requires temperatures in excess of 1200 °…
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Using a CO$_2$ laser to directly heat the crystals from the back side, SrTiO$_3$ substrates may be thermally prepared in situ for epitaxy without the need for ex-situ etching and annealing. We find that the formation of large terraces with straight steps at 900-1100 °C is independent from the formation of the ideal surface reconstruction for epitaxy, which requires temperatures in excess of 1200 °C to complete. The process may be universal, at least for perovskite oxide surfaces, as it also works, at different temperatures, for LaAlO$_3$ and NdGaO$_3$, two other widely used oxide substrate materials.
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Submitted 23 February, 2018;
originally announced February 2018.
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Global dynamics of oscillator populations under common noise
Authors:
W. Braun,
A. Pikovsky,
M. A. Matias,
P. Colet
Abstract:
Common noise acting on a population of identical oscillators can synchronize them. We develop a description of this process which is not limited to the states close to synchrony, but provides a global picture of the evolution of the ensembles. The theory is based on the Watanabe-Strogatz transformation, allowing us to obtain closed stochastic equations for the global variables. We show that on the…
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Common noise acting on a population of identical oscillators can synchronize them. We develop a description of this process which is not limited to the states close to synchrony, but provides a global picture of the evolution of the ensembles. The theory is based on the Watanabe-Strogatz transformation, allowing us to obtain closed stochastic equations for the global variables. We show that on the initial stage, the order parameter grows linearly in time, while on the late stages the convergence to synchrony is exponentially fast. Furthermore, we extend the theory to nonidentical ensembles with the Lorentzian distribution of natural frequencies and determine the stationary values of the order parameter in dependence on driving noise and mismatch.
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Submitted 14 May, 2012;
originally announced May 2012.
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In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films
Authors:
Bernd Jenichen,
Vladimir Kaganer,
Wolfgang Braun,
Roman Shayduk,
Bradley Tinkham,
Jens Herfort
Abstract:
Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of x-ray intensity oscillations due to a gradual surface roughening during growth is found. The corresponding sequence of coverages of the different terrace leve…
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Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of x-ray intensity oscillations due to a gradual surface roughening during growth is found. The corresponding sequence of coverages of the different terrace levels is obtained. The after-deposition surface recovery is very slow. Annealing at 310 degrees Celsius combined with the deposition of one monolayer of Fe3Si restores the surface to high perfection and minimal roughness. Our stoichiometric films possess long-range order and a high quality heteroepitaxial interface.
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Submitted 18 December, 2007; v1 submitted 13 December, 2007;
originally announced December 2007.
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Ostwald ripening of faceted two-dimensional islands
Authors:
V. M. Kaganer,
W. Braun,
K. K. Sabelfeld
Abstract:
We study Ostwald ripening of two-dimensional adatom and advacancy islands on a crystal surface by means of kinetic Monte Carlo simulations. At large bond energies the islands are square-shaped, which qualitatively changes the coarsening kinetics. The Gibbs--Thomson chemical potential is violated: the coarsening proceeds through a sequence of `magic' sizes corresponding to square or rectangular i…
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We study Ostwald ripening of two-dimensional adatom and advacancy islands on a crystal surface by means of kinetic Monte Carlo simulations. At large bond energies the islands are square-shaped, which qualitatively changes the coarsening kinetics. The Gibbs--Thomson chemical potential is violated: the coarsening proceeds through a sequence of `magic' sizes corresponding to square or rectangular islands. The coarsening becomes attachment-limited, but Wagner's asymptotic law is reached after a very long transient time. The unusual coarsening kinetics obtained in Monte Carlo simulations are well described by the Becker--Döring equations of nucleation kinetics. These equations can be applied to a wide range of coarsening problems.
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Submitted 15 January, 2007;
originally announced January 2007.
