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Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS$_2$/GaAs
Authors:
Rafael R. Rojas-Lopez,
Juliana C. Brant,
Maíra S. O. Ramos,
Túlio H. L. G. Castro,
Marcos H. D. Guimarães,
Bernardo R. A. Neves,
Paulo S. S. Guimarães
Abstract:
The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS$_2$ wit…
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The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS$_2$ with GaAs it is possible to develop high quality photodetectors and solar cells. Here, we present a study of the effects of intrinsic GaAs, p-doped GaAs, and n-doped GaAs substrates on the photoluminescence of monolayer MoS$_2$. We observe a decrease of an order of magnitude in the emission intensity of MoS$_2$ in all MoS$_2$/GaAs heterojunctions, when compared to a control sample consisting of a MoS$_2$ monolayer isolated from GaAs by a few layers of hexagonal boron nitride. We also see a dependence of the trion to A-exciton emission ratio in the photoluminescence spectra on the type of substrate, a dependence that we relate to the static charge exchange between MoS$_2$ and the substrates when the junction is formed. Scanning Kelvin probe microscopy measurements of the heterojunctions suggest type-I band alignments, so that excitons generated on the MoS$_2$ monolayer will be transferred to the GaAs substrate. Our results shed light on the charge exchange leading to band offsets in 2D/3D heterojunctions which play a central role in the understanding and further improvement of electronic devices.
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Submitted 3 December, 2021;
originally announced December 2021.
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Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
Authors:
M. H. D. Guimarães,
P. J. Zomer,
J. Ingla-Aynés,
J. C. Brant,
N. Tombros,
B. J. van Wees
Abstract:
We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 $μ$m even at room temperature. We obtain that the ratio of the spin rel…
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We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 $μ$m even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is $τ_{\bot} / τ_{||} \approx$ 0.75 for zero applied perpendicular electric field. By tuning the electric field this anisotropy changes to $\approx$0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling.
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Submitted 26 August, 2014; v1 submitted 18 June, 2014;
originally announced June 2014.
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Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
Authors:
P. J. Zomer,
M. H. D. Guimarães,
J. C. Brant,
N. Tombros,
B. J. van Wees
Abstract:
We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49 000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method pr…
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We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49 000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.
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Submitted 3 March, 2014;
originally announced March 2014.
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Electron Transport in Disordered Graphene Nanoribbons
Authors:
Melinda Y. Han,
Juliana C. Brant,
Philip Kim
Abstract:
We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is inversely proportional to the width. In this gap, electron is localized, and charge transport exhibits a transition between simple thermally activated behavior at h…
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We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is inversely proportional to the width. In this gap, electron is localized, and charge transport exhibits a transition between simple thermally activated behavior at higher temperatures and a variable range hopping at lower temperatures. By varying the geometric capacitance through the addition of top gates, we find that charging effects constitute a significant portion of the activation energy.
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Submitted 26 October, 2009;
originally announced October 2009.
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Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
Authors:
L. M. Malard,
J. Nilsson,
D. C. Elias,
J. C. Brant,
F. Plentz,
E. S. Alves,
A. H. Castro Neto,
M. A. Pimenta
Abstract:
The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of ele…
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The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.
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Submitted 9 August, 2007;
originally announced August 2007.
