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Out-of-plane orientation of luminescent excitons in atomically thin indium selenide flakes
Authors:
Mauro Brotons-Gisbert,
Raphaël Proux,
Raphaël Picard,
Daniel Andres-Penares,
Artur Branny,
Alejandro Molina-Sánchez,
Juan F. Sánchez-Royo,
Brian D. Gerardot
Abstract:
Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and…
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Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe$_2$ and MoSe$_2$. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe$_2$ and MoSe$_2$ at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.
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Submitted 26 September, 2019; v1 submitted 20 January, 2019;
originally announced January 2019.
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Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir
Authors:
Mauro Brotons-Gisbert,
Artur Branny,
Santosh Kumar,
Raphaël Picard,
Raphaël Proux,
Mason Gray,
Kenneth S. Burch,
Kenji Watanabe,
Takashi Taniguchi,
Brian D. Gerardot
Abstract:
Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical example is a semiconductor quantum dot separated from a gated contact by a tunnel barrier. This enables Coulomb blockade, the phenomenon whereby electrons or holes ca…
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Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical example is a semiconductor quantum dot separated from a gated contact by a tunnel barrier. This enables Coulomb blockade, the phenomenon whereby electrons or holes can be loaded one-by-one into a quantum dot. Depending on the tunnel-coupling strength, this capability facilitates single spin quantum bits or coherent many-body interactions between the confined spin and the Fermi reservoir. Van der Waals (vdW) heterostructures, in which a wide range of unique atomic layers can easily be combined, offer novel prospects to engineer coherent quantum confined spins, tunnel barriers down to the atomic limit or a Fermi reservoir beyond the conventional flat density of states. However, gate-control of vdW nanostructures at the single particle level is needed to unlock their potential. Here we report Coulomb blockade in a vdW heterostructure consisting of a transition metal dichalcogenide quantum dot coupled to a graphene contact through an atomically thin hexagonal boron nitride (hBN) tunnel barrier. Thanks to a tunable Fermi reservoir, we can deterministically load either a single electron or a single hole into the quantum dot. We observe hybrid excitons, composed of localized quantum dot states and delocalized continuum states, arising from ultra-strong spin-conserving tunnel coupling through the atomically thin tunnel barrier. Probing the charged excitons in applied magnetic fields, we observe large gyromagnetic ratios (~8). Our results establish a foundation for engineering next-generation devices to investigate either novel regimes of Kondo physics or isolated quantum bits in a vdW heterostructure platform.
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Submitted 24 April, 2019; v1 submitted 5 October, 2018;
originally announced October 2018.
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Microcavity enhanced single photon emission from two-dimensional WSe2
Authors:
L. C. Flatten,
L. Weng,
A. Branny,
S. Johnson,
P. R. Dolan,
A. A. P. Trichet,
B. D. Gerardot,
J. M. Smith
Abstract:
Atomically flat semiconducting materials such as monolayer WSe$_2$ hold great promise for novel optoelectronic devices. Recently, quantum light emission has been observed from bound excitons in exfoliated WSe$_2$. As part of developing optoelectronic devices, the control of the radiative properties of such emitters is an important step. Here we report the coupling of a bound exciton in WSe$_2$ to…
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Atomically flat semiconducting materials such as monolayer WSe$_2$ hold great promise for novel optoelectronic devices. Recently, quantum light emission has been observed from bound excitons in exfoliated WSe$_2$. As part of developing optoelectronic devices, the control of the radiative properties of such emitters is an important step. Here we report the coupling of a bound exciton in WSe$_2$ to open microcavities. We use a range of radii of curvature in the plano-concave cavity geometry with mode volumes in the $λ^3$ regime, giving Purcell factors of up to 8 while increasing the photon flux five-fold. Additionally we determine the quantum efficiency of the single photon emitter to be $η= 0.46 \pm 0.03$. Our findings pave the way to cavity-enhanced monolayer based single photon sources for a wide range of applications in nanophotonics and quantum information technologies.
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Submitted 8 July, 2018;
originally announced July 2018.
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Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
Authors:
Artur Branny,
Santosh Kumar,
Raphaël Proux,
Brian D. Gerardot
Abstract:
An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal…
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An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funneling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. These arrays of non-classical light emitters open new vistas for two-dimensional semiconductors in cavity quantum electrodynamics and integrated on-chip quantum photonics.
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Submitted 5 October, 2016;
originally announced October 2016.
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Resonance fluorescence and laser spectroscopy of three-dimensionally confined excitons in monolayer WSe$_2$
Authors:
S. Kumar,
M. Brotons-Gisbert,
R. Al-Khuzheyri,
A. Branny,
G. Ballesteros-Garcia,
J. F. Sanchez-Royo,
B. D. Gerardot
Abstract:
Resonant optical excitation of few-level quantum systems enables coherent quantum control, resonance fluorescence, and direct characterization of dephasing mechanisms. Experimental demonstrations have been achieved in a variety of atomic and solid-state systems. An alternative but intriguing quantum photonic platform is based on single layer transition metal chalcogenide semiconductors, which exhi…
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Resonant optical excitation of few-level quantum systems enables coherent quantum control, resonance fluorescence, and direct characterization of dephasing mechanisms. Experimental demonstrations have been achieved in a variety of atomic and solid-state systems. An alternative but intriguing quantum photonic platform is based on single layer transition metal chalcogenide semiconductors, which exhibit a direct band-gap with optically addressable exciton valley-pseudospins in a uniquely two-dimensional form. Here we perform resonance and near-resonance excitation of three-dimensionally confined excitons in monolayer WSe$_2$ to reveal near ideal single photon fluorescence with count rates up to 3 MHz and uncover a weakly-fluorescent exciton state ~ 5 meV blue-shifted from the ground-state exciton. We perform high-resolution photoluminescence excitation spectroscopy of the localized excitons, providing important information to unravel the precise nature of the quantum states. Successful demonstration of resonance fluorescence paves the way to probe the localized exciton coherence. Moreover, these results yield a route for investigations of the spin and valley coherence of confined excitons in two-dimensional semiconductors.
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Submitted 19 April, 2016;
originally announced April 2016.
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Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, Magneto-optics and Charge tuning
Authors:
Artur Branny,
Gang Wang,
Santosh Kumar,
Cedric Robert,
Benjamin Lassagne,
Xavier Marie,
Brian D. Gerardot,
Bernhard Urbaszek
Abstract:
Transition metal dichalcogenide monolayers such as MoSe2,MoS2 and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the…
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Transition metal dichalcogenide monolayers such as MoSe2,MoS2 and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We extract an exciton g-factor of the discrete emitters close to -4, as for 2D excitons in this material. In a charge tunable sample we record discrete jumps on the meV scale as charges are added to the emitter when changing the applied voltage. The control of the emission properties of these quantum dot like emitters paves the way for further engineering of the light matter interaction in these atomically thin materials.
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Submitted 25 February, 2016;
originally announced February 2016.
