Showing 1–2 of 2 results for author: Bruckel, T

Enhanced anisotropy and study of magnetization reversal in Co/C60 bilayer thin film

Authors: Srijani Mallik, Purbasha Sharangi, Biswajit Sahoo, Stefan Mattauch, Thomas Bruckel, Subhankar Bedanta

Abstract: The interface between organic semiconductor [OSC]/ferromagnetic [FM] material can exhibit ferromagnetism due to their orbital hybridization. Charge/spin transfer may occur from FM to OSC layer leading to the formation of `spinterface' i.e. the interface exhibiting a finite magnetic moment. In this work, the magnetic properties of Co/C$_{60}$ bilayer thin film have been studied to probe the interfa… ▽ More The interface between organic semiconductor [OSC]/ferromagnetic [FM] material can exhibit ferromagnetism due to their orbital hybridization. Charge/spin transfer may occur from FM to OSC layer leading to the formation of `spinterface' i.e. the interface exhibiting a finite magnetic moment. In this work, the magnetic properties of Co/C$_{60}$ bilayer thin film have been studied to probe the interface between Co and C$_{60}$ layer. Polarized neutron reflectivity [PNR] measurement indicates that the thickness and moment of the spinterface are $\sim$ 2 $\pm$ 0.18 nm and 0.8 $\pm$ 0.2 $μ_B$/cage, respectively. The comparison of the magnetization reversal between the Co/C$_{60}$ bilayer and the parent single layer Co thin film reveals that spinterface modifies the domain microstructure. Further, the anisotropy of the bilayer system shows a significant enhancement ($\sim$ two times) in comparison to its single layer counterpart which is probably due to an additional interfacial anisotropy arising from the orbital hybridization at the Co/C$_{60}$ interface. △ Less

Submitted 26 November, 2019; originally announced November 2019.

Tuning spinterface properties in Iron/Fullerene thin films

Authors: Srijani Mallik, Amir Syed Mohd., Alexandros Koutsioubas, Stefan Mattauch, Biswarup Satpati, Thomas Bruckel, Subhankar Bedanta

Abstract: In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in the OSC which leads to a finite magnetic moment at the OSC interface and it is called the "spinterface". One of the main motivation in this field of organic spin… ▽ More In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in the OSC which leads to a finite magnetic moment at the OSC interface and it is called the "spinterface". One of the main motivation in this field of organic spintronics is how to control the magnetic moment in the spinterface. In this regard, there are several open questions such as (i) which combination of FM and OSC can lead to more moment at the spinterface? (ii) Is the thickness of OSC also important? (iii) How does the spinterface moment vary with the FM thickness? (iv) Does the crystalline quality of the FM matters? (v) What is the effect of spinterface on magnetization reversal, domain structure and anisotropy? In this context, we have tried to answer the last three issues in this paper by studying Fe/C$_{60}$ bilayers of variable Fe thickness deposited on Si substrates. We find that both the induced moment and thickness of the spinterface vary proportionally with the Fe thickness. Such behavior is explained in terms of the growth quality of the Fe layer on the native oxide of the Si (100) substrate. The magnetization reversal, domain structure and anisotropy of these bilayer samples were studied and compared with their respective reference samples without having the C$_{60}$ layer. It is observed that the formation of spinterface leads to reduction in uniaxial anisotropy in Fe/C$_{60}$ on Si (100) in comparison to their reference samples. △ Less

Submitted 18 July, 2019; originally announced July 2019.