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AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
Authors:
N. Buatip,
T. Auzelle,
P. John,
S. Rauwerdink,
M. Sohdi,
M. Saluan,
B. Fernandez,
E. Monroy,
D. Mornex,
C. R. Bowen,
R. Songmuang
Abstract:
In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of invest…
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In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of investigation. Our presented results are utilized to determine the performance figures of merit (FoM) of nanowire-based VINGs, namely the piezoelectric voltage constant (g) for sensing, and the product d g for energy harvesting, where d is the piezoelectric charge constant. By comparison of these metrics with those of freestanding single crystal GaN and quartz substrates, as well as sputtered AlN thin films, we suggest that the nanowires can outperform their rigid counterparts in terms of mechanical sensing and energy generation. This work provides experimental guidelines for understanding the direct piezo-characteristics of VINGs and facilitates a quantitative comparison between nanostructured piezoelectric devices fabricated using different materials or architectures.
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Submitted 1 June, 2024; v1 submitted 15 February, 2024;
originally announced February 2024.
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Thermal energy harvesting using pyroelectric-electrochemical coupling in ferroelectric materials
Authors:
Yan Zhang,
Pham Thi Thuy Phuong,
Eleanor Roake,
Hamideh Khanbareh,
Yaqiong Wang,
Steve Dunn,
Chris Bowen
Abstract:
Recently, the coupling of ferroelectrics with electrochemical reactions has attracted increasing interest for harvesting waste heat. The change of polarisation of a ferroelectric with temperature can be used to influence chemical reactions, especially when the material is cycled near its Curie temperature. In this perspective, we introduce the principle of pyroelectric controlled electrochemical p…
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Recently, the coupling of ferroelectrics with electrochemical reactions has attracted increasing interest for harvesting waste heat. The change of polarisation of a ferroelectric with temperature can be used to influence chemical reactions, especially when the material is cycled near its Curie temperature. In this perspective, we introduce the principle of pyroelectric controlled electrochemical processes by harvesting waste heat energy and explore their potential electrochemical applications, such as water treatment, air purificiation and hydrogen generation. As an emerging approach for driving electrochemical reactions, the presence of thermal fluctuations and/or transient waste heat in the environment has the potential to be the primary thermal input for driving the change in polarisation of a pyroelectric to release charge for such reactions. There are a number of avenues to explore and we summarize strategies for forming multi-functional or hybrid materials and future directions such as selecting pyroelectrics with low Curie temperature (< 100 °C), improved heat conductivity, enhanced surface area or porosity, tailored microstructures and systems capable of operating over a broader temperature range.
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Submitted 17 February, 2020;
originally announced February 2020.
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Energy harvesting from coupled bending-twisting oscillations in carbon-fibre reinforced polymer laminates
Authors:
Mengying Xie,
Yan Zhang,
Marcin J. Kraśny,
Andrew Rhead,
Chris Bowen,
Mustafa Arafa
Abstract:
The energy harvesting capability of resonant harvesting structures, such as piezoelectric cantilever beams, can be improved by utilizing coupled oscillations that generate favourable strain mode distributions. In this work, we present the first demonstration of the use of a laminated carbon fibre reinforced polymer to create cantilever beams that undergo coupled bending-twisting oscillations for e…
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The energy harvesting capability of resonant harvesting structures, such as piezoelectric cantilever beams, can be improved by utilizing coupled oscillations that generate favourable strain mode distributions. In this work, we present the first demonstration of the use of a laminated carbon fibre reinforced polymer to create cantilever beams that undergo coupled bending-twisting oscillations for energy harvesting applications. Piezoelectric layers that operate in bending and shear mode are attached to the bend-twist coupled beam surface at locations of maximum bending and torsional strains in the first mode of vibration to fully exploit the strain distribution along the beam. Modelling of this new bend-twist harvesting system is presented, which compares favourably with experimental results. It is demonstrated that the variety of bend and torsional modes of the harvesters can be utilized to create a harvester that operates over a wider range of frequencies and such multi-modal device architectures provides a unique approach to tune the frequency response of resonant harvesting systems.
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Submitted 1 February, 2019;
originally announced February 2019.
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Understanding the effect of porosity on the polarisation-field response of ferroelectric materials
Authors:
Yan Zhang,
James Roscow,
Rhodri Lewis,
Hamideh Khanbareh,
Vitaly Yu. Topolov,
Mengying Xie,
Chris R. Bowen
Abstract:
This paper combines experimental and modelling studies to provide a detailed examination of the influence of porosity volume fraction and morphology on the polarisation-electric field response of ferroelectric materials. The broadening of the electric field distribution and a decrease in the electric field experienced by the ferroelectric ceramic medium due to the presence of low-permittivity pore…
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This paper combines experimental and modelling studies to provide a detailed examination of the influence of porosity volume fraction and morphology on the polarisation-electric field response of ferroelectric materials. The broadening of the electric field distribution and a decrease in the electric field experienced by the ferroelectric ceramic medium due to the presence of low-permittivity pores is examined and its implications on the shape of the hysteresis loop, remnant polarisation and coercive field is discussed. The variation of coercive field with porosity level is seen to be complex and is attributed to two competing mechanisms where at high porosity levels the influence of the broadening of the electric field distribution dominates, while at low porosity levels an increase in the compliance of the matrix is more important. This new approach to understanding these materials enables the seemingly conflicting observations in the existing literature to be clarified and provides an effective approach to interpret the influence of pore fraction and morphology on the polarisation behaviour of ferroelectrics. Such information provides new insights in the interpretation of the physical properties of porous ferroelectric materials to inform future effort in the design of ferroelectric materials for piezoelectric sensor, actuator, energy harvesting, and transducer applications.
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Submitted 1 February, 2019;
originally announced February 2019.
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High piezoelectric sensitivity and hydrostatic figures of merit in unidirectional porous ferroelectric ceramics fabricated by freeze casting
Authors:
Yan Zhang,
James Roscow,
Mengying Xie,
Chris Bowen
Abstract:
High performance lead zirconate titanate (PZT) ceramics with aligned porosity for sensing applications were fabricated by an ice-templating method. To demonstrate the enhanced properties of these materials and their potential for sensor and hydrophone applications, the piezoelectric voltage constants hydrostatic parameters and AC conductivity as a function of the porosity in directions both parall…
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High performance lead zirconate titanate (PZT) ceramics with aligned porosity for sensing applications were fabricated by an ice-templating method. To demonstrate the enhanced properties of these materials and their potential for sensor and hydrophone applications, the piezoelectric voltage constants hydrostatic parameters and AC conductivity as a function of the porosity in directions both parallel and perpendicular to the freezing temperature gradient were studied. As the porosity level was increased, PZT poled parallel to the freezing direction exhibited the highest coefficients, and hydrostatic figures of merit compared to the dense and PZT poled perpendicular to the freezing direction. This work demonstrates that piezoelectric ceramics produced with aligned pores by freeze casting are a promising candidate for a range of sensor applications and the polarisation orientation relative to the freezing direction can be used to tailor the microstructure and optimise sensitivity for sensor and hydrostatic transducer applications.
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Submitted 1 February, 2019;
originally announced February 2019.
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Perovskites for Solar and Thermal Energy Harvesting: State of the Art Technologies, Current Scenario and Future Directions
Authors:
Richa Pandey,
Gaurav Vats,
Jae Yun,
Chris R Bowen,
Anita W. Y. Ho-Baillie,
Jan Seidel
Abstract:
Solar energy is anticipated to be the most viable source of sustainable green energy. Perovskites have gained significant research attention in recent years as a solar energy harvesting material due to their desirable photovoltaic enabling properties. The potential strategies for a more effective use of these materials can involve multiple energy conversion mechanisms through a single device or em…
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Solar energy is anticipated to be the most viable source of sustainable green energy. Perovskites have gained significant research attention in recent years as a solar energy harvesting material due to their desirable photovoltaic enabling properties. The potential strategies for a more effective use of these materials can involve multiple energy conversion mechanisms through a single device or employing materials where a solar or thermal input provides multiple electrical outputs to enhance the overall energy harvesting capability. In this context, the present review focuses on perovskites, including both organic halide perovskites and inorganic oxide perovskites, due to their proven properties as photovoltaic materials and their intriguing potential for additional functionality, such as ferroelectricity. Ferroelectrics are a special class of perovskites that have been studied in detail for photoferroic, pyroelectric and thermoelectric effects and energy storage, which we briefly review here. Furthermore, the possibilities of simultaneously tuning these mechanisms in perovskite materials for multiple energy conversion mechanisms and storage for ultra-high density capacitor and battery applications is also examined in order to attain a better understanding and to present novel opportunities. An understanding of all these mechanisms and device prospects will inspire and inform the selection of appropriate materials and potential novel designs so that the available solar and thermal resource could be utilized in a more effective manner. This review will not only help in selecting an appropriate material from the existing pool of perovskite materials, but will also provide an outlook and assistance to researchers in developing new material systems.
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Submitted 16 May, 2017;
originally announced May 2017.
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Machine-learned approximations to Density Functional Theory Hamiltonians
Authors:
Ganesh Hegde,
R. Chris Bowen
Abstract:
Large scale Density Functional Theory (DFT) based electronic structure calculations are highly time consuming and scale poorly with system size. While semi-empirical approximations to DFT result in a reduction in computational time versus ab initio DFT, creating such approximations involves significant manual intervention and is highly inefficient for high-throughput electronic structure screening…
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Large scale Density Functional Theory (DFT) based electronic structure calculations are highly time consuming and scale poorly with system size. While semi-empirical approximations to DFT result in a reduction in computational time versus ab initio DFT, creating such approximations involves significant manual intervention and is highly inefficient for high-throughput electronic structure screening calculations. In this letter, we propose the use of machine-learning for fast and accurate prediction of DFT Hamiltonians. Using suitable representations of atomic neighborhoods and Kernel Ridge Regression, we show that an accurate and transferable prediction of DFT Hamiltonians for a variety of material environments can be achieved. Electronic transmission spectra computed using predicted Hamiltonians compare accurately with their DFT counterparts. The method is independent of the specifics of the DFT basis or material system used and can easily be automated and scaled for predicting Hamiltonians of any material system of interest.
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Submitted 19 December, 2016; v1 submitted 19 September, 2016;
originally announced September 2016.
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Lower limits of line resistance in nanocrystalline Back End of Line Cu interconnects
Authors:
Ganesh Hegde,
R. Chris Bowen,
Mark S. Rodder
Abstract:
The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use first principles density functional theory based electronic structure of Cu interconnects to find the lower limits of their line resistance for metal linewidths corresponding to future technology nodes. We find that eve…
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The strong non-linear increase in Cu interconnect line resistance with a decrease in linewidth presents a significant obstacle to their continued downscaling. In this letter we use first principles density functional theory based electronic structure of Cu interconnects to find the lower limits of their line resistance for metal linewidths corresponding to future technology nodes. We find that even in the absence of scattering due to grain boundaries, edge roughness or interfaces, quantum confinement causes a severe reduction in current carrying capacity of Cu. We discuss the causes of transport orientation dependent anisotropy of quantum confinement in Cu. We also find that when the simplest scattering mechanism in the grain boundary scattering dominated limit is added to otherwise coherent electronic transmission in monocrystalline nanowires, the lower limits of line resistance are significantly higher than projected roadmap requirements in the International Technology Roadmap for Semiconductors.
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Submitted 9 August, 2016; v1 submitted 25 January, 2016;
originally announced January 2016.
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On the feasibility of ab initio electronic structure calculations for Cu using a single s orbital basis
Authors:
Ganesh Hegde,
R. Chris Bowen
Abstract:
The accuracy of a single s-orbital representation of Cu towards enabling multi-thousand atom ab initio calculations of electronic structure is evaluated in this work. If an electrostatic compensation charge of approximately 0.3 electrons per atom is used in this basis representation of copper, the electronic transmission in bulk and nanocrystalline Cu compares accurately to that obtained with a Do…
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The accuracy of a single s-orbital representation of Cu towards enabling multi-thousand atom ab initio calculations of electronic structure is evaluated in this work. If an electrostatic compensation charge of approximately 0.3 electrons per atom is used in this basis representation of copper, the electronic transmission in bulk and nanocrystalline Cu compares accurately to that obtained with a Double Zeta Polarized basis set. The use of this representation is analogous to the use of single band effective mass representation for semiconductor electronic structure. With a basis of just one s-orbital per Cu atom, the representation is extremely computationally efficient and can be used to provide much needed ab initio insight into electronic transport in nanocrystalline Cu interconnects at realistic dimensions.
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Submitted 3 September, 2015;
originally announced September 2015.
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Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts
Authors:
Ganesh Hegde,
R. Chris Bowen
Abstract:
The effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding (TB) calculations. Using simulation unit cells guided by the interface chemistry of epitaxial CoSi2 on [100] oriented Si observed experimentally, it is shown that the 'ideal metal' assumption fails in…
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The effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding (TB) calculations. Using simulation unit cells guided by the interface chemistry of epitaxial CoSi2 on [100] oriented Si observed experimentally, it is shown that the 'ideal metal' assumption fails in some situations and consequently underestimates the lower limit of contact resistivity in n-Si by at least an order of magnitude at high doping concentrations. The mismatch in transverse momentum space in the metal and the semiconductor, the so-called 'valley filtering effect', is shown to be dependent on the interface chemistry simulated. The results emphasize the need for explicit inclusion of the metal atomic and electronic structure in the atomistic modeling of transport across metal-semiconductor contacts
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Submitted 6 May, 2014;
originally announced May 2014.
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A comparison of the carrier density at the surface of quantum wells for different crystal orientations of silicon, gallium arsenide and indium arsenide
Authors:
Ryan Hatcher,
Chris Bowen
Abstract:
We report the carrier densities at the surface of single-crystal quantum wells as a function of material, orientation and well width. We include wells constructed from silicon, gallium arsenide and indium arsenide with three crystal orientations, (100), (110) and (111), included for each material. We find that the D2 states in a silicon (100) quantum well have the smallest density near the surface…
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We report the carrier densities at the surface of single-crystal quantum wells as a function of material, orientation and well width. We include wells constructed from silicon, gallium arsenide and indium arsenide with three crystal orientations, (100), (110) and (111), included for each material. We find that the D2 states in a silicon (100) quantum well have the smallest density near the surface of the slab. Inspection of the planar average of the carrier densities reveals a characteristic shape that depends on the material and orientation, which leads to a varying degree of suppression or enhancement of the density near the surface. The physics responsible for the suppression or enhancement of the density near the surface can be traced to a constraint imposed by the symmetry of quantum well wavefunction on the phases of the bulk Bloch states of the crystal from which it can be constructed.
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Submitted 1 August, 2013;
originally announced August 2013.
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Physical insight into reduced surface roughness scattering in strained silicon inversion layers
Authors:
Chris Bowen,
Ryan Hatcher
Abstract:
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this discrepancy is due to a bulging effect in the electron Δ4 wavefunction at the silicon surface. This renders Δ4 electrons more susceptible to perturbations in surf…
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A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this discrepancy is due to a bulging effect in the electron Δ4 wavefunction at the silicon surface. This renders Δ4 electrons more susceptible to perturbations in surface structure thereby increasing surface roughness scattering for these states. Strain engineering utilized by the CMOS industry reduces the relative occupancy of the Δ4 states resulting in less overall surface roughness scattering in the channel. We show that the origin of this effect can be explained by moving beyond the effective mass approximation and contrasting the properties of the Δ2 and Δ4 wavefunctions in a representation that comprehends full crystal and Bloch state symmetry.
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Submitted 26 April, 2012; v1 submitted 5 April, 2012;
originally announced April 2012.
