Growth of Highly Conductive PtSe2 Films Controlled by Raman Metrics for High-Frequency Photodetectors and Optoelectronic Mixers at 1.55 μm
Authors:
Eva Desgué,
Ivan Verschueren,
Marin Tharrault,
Djordje Dosenovic,
Ludovic Largeau,
Eva Grimaldi,
Delphine Pommier,
Doriane Jussey,
Bérangère Moreau,
Dominique Carisetti,
Laurent Gangloff,
Patrick Plouhinec,
Naomie Messudom,
Zineb Bouyid,
Didier Pribat,
Julien Chaste,
Abdelkarim Ouerghi,
Bernard Plaçais,
Emmanuel Baudin,
Hanako Okuno,
Pierre Legagneux
Abstract:
Two-dimensional PtSe2 exhibits outstanding intrinsic properties such as high carrier mobility, tunable bandgap, broadband absorption and air stability, making it ideal for (opto)electronic applications. However, achieving films of high crystalline quality with controlled properties on low-cost and insulating substrates remains challenging. Here, highly crystalline semimetallic PtSe2 films are grow…
▽ More
Two-dimensional PtSe2 exhibits outstanding intrinsic properties such as high carrier mobility, tunable bandgap, broadband absorption and air stability, making it ideal for (opto)electronic applications. However, achieving films of high crystalline quality with controlled properties on low-cost and insulating substrates remains challenging. Here, highly crystalline semimetallic PtSe2 films are grown by molecular beam epitaxy on sapphire substrates. It is shown that a post-growth annealing remarkably improves the out-of-plane crystallinity and leads to record sheet conductances, up to 1.6 mS. In-depth structural analyses reveal the strong influence of the domain arrangement within the films on their sheet conductance. Moreover, it is demonstrated that the A1g Raman peak width, in addition to the commonly used Eg peak width, are both effective metrics for evaluating the quality of PtSe2: films with narrower Eg and A1g peaks exhibit higher in-plane and out-of-plane crystalline quality, as well as higher sheet conductance. Finally, coplanar waveguides integrating a semimetallic PtSe2 channel are fabricated on a 2-inch sapphire substrate to demonstrate optoelectronic devices operating at the 1.55 um telecom wavelength. This includes photodetectors with a record bandwidth of 60 GHz and the first PtSe2-based optoelectronic mixer with a 30 GHz bandwidth.
△ Less
Submitted 23 May, 2025; v1 submitted 26 March, 2025;
originally announced March 2025.
