Study of the optimal conditions for NV- center formation in type 1b diamond, using photoluminescence and positron annihilation spectroscopies
Authors:
J. Botsoa,
T. Sauvage,
M. -P. Adam,
P. Desgardin,
E. Leoni,
B. Courtois,
F. Treussart,
M. -F. Barthe
Abstract:
We studied the parameters to optimize the production of negatively-charged nitrogen-vacancy color centers (NV-) in type~1b single crystal diamond using proton irradiation followed by thermal annealing under vacuum. Several samples were treated under different irradiation and annealing conditions and characterized by slow positron beam Doppler-broadening and photoluminescence (PL) spectroscopies. A…
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We studied the parameters to optimize the production of negatively-charged nitrogen-vacancy color centers (NV-) in type~1b single crystal diamond using proton irradiation followed by thermal annealing under vacuum. Several samples were treated under different irradiation and annealing conditions and characterized by slow positron beam Doppler-broadening and photoluminescence (PL) spectroscopies. At high proton fluences another complex vacancy defect appears limiting the formation of NV-. Concentrations as high as 2.3 x 10^18 cm^-3 of NV- have been estimated from PL measurements. Furthermore, we inferred the trapping coefficient of positrons by NV-. This study brings insight into the production of a high concentration of NV- in diamond, which is of utmost importance in ultra-sensitive magnetometry and quantum hybrid systems applications.
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Submitted 24 August, 2011; v1 submitted 30 April, 2011;
originally announced May 2011.
