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Observation and mitigation of microwave echoes from dielectric defects in Josephson traveling wave amplifiers
Authors:
Matteo Boselli,
Joel Grebel,
Ambroise Peugeot,
Rémy Dassonneville,
Benjamin Huard,
Audrey Bienfait
Abstract:
Amplifying microwave signals with a noise close to the minimum imposed by quantum mechanics is now routinely performed with superconducting quantum devices. In particular, Josephson-based Traveling Wave Parametric Amplifiers (JTWPA) have shown record bandwidth with added noise close to the quantum limit. In this work, we report the appearance of echo signals emitted by JTWPAs driven by trains of h…
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Amplifying microwave signals with a noise close to the minimum imposed by quantum mechanics is now routinely performed with superconducting quantum devices. In particular, Josephson-based Traveling Wave Parametric Amplifiers (JTWPA) have shown record bandwidth with added noise close to the quantum limit. In this work, we report the appearance of echo signals emitted by JTWPAs driven by trains of high-power pulses exceeding their dynamical range. we explore the case of weak signals generated through high power pulses. By sending a train of such high-power pulses, beyond the 1 dB compression point of such amplifiers, we observe the appearance of echoes, solely due to the JTWPA. These echoes have micro-second coherence and we attribute their origin to microscopic defects in the amplifier dielectric layer. By analyzing the power and the coherence of the echo signal as a function of temperature, we estimate the dielectric loss brought by these defects, and their impact on the JTWPA quantum efficiency. We introduce a mitigation technique (BLAST) to prevent the appearance of these echoes, consisting in an additional high-power tone sent concurrently with each pulse. We demonstrate that it suppresses the spurious defect signals and we recover the typical gain and noise figure within 95% of their low-power values in 300 ns. These results can help to extend the use of JTWPAs in experiments where fast high-power sequences are necessary to generate weak microwave responses from the system under study, and also provide a path towards characterizing in-situ the dielectric losses of these devices.
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Submitted 20 August, 2025; v1 submitted 28 February, 2025;
originally announced March 2025.
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Improving magnetic-field resilience of NbTiN planar resonators using a hard-mask fabrication technique
Authors:
Arne Bahr,
Matteo Boselli,
Benjamin Huard,
Audrey Bienfait
Abstract:
High-quality factor microwave resonators operating in a magnetic field are a necessity for some quantum sensing applications and hybrid platforms. Losses in microwave superconducting resonators can have several origins, including microscopic defects, usually known as two-level-systems (TLS). Here, we characterize the magnetic field response of NbTiN resonators patterned on sapphire and observe cle…
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High-quality factor microwave resonators operating in a magnetic field are a necessity for some quantum sensing applications and hybrid platforms. Losses in microwave superconducting resonators can have several origins, including microscopic defects, usually known as two-level-systems (TLS). Here, we characterize the magnetic field response of NbTiN resonators patterned on sapphire and observe clear absorption lines occurring at specific magnetic fields. We identify the spin systems responsible for these features, including a yet unreported spin with $g=1.85$ that we attribute to defects in the NbTiN thin film. We develop mitigation strategies involving namely an aluminum etch mask, resulting in maintaining quality factors above $Q>2 \times 10^5$ in the range $0$-$0.3$ T.
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Submitted 21 December, 2023;
originally announced December 2023.
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Thermal and electrostatic tuning of surface phonon-polaritons in LaAlO3/SrTiO3 heterostructures
Authors:
Yixi Zhou,
Adrien Waelchli,
Margherita Boselli,
Iris Crassee,
Adrien Bercher,
Weiwei Luo,
Jiahua Duan,
J. L. M. van Mechelen,
Dirk van der Marel,
Jérémie Teyssier,
Carl Willem Rischau,
Lukas Korosec,
Stefano Gariglio,
Jean-Marc Triscone,
Alexey B. Kuzmenko
Abstract:
Phonon polaritons are promising for infrared applications due to a strong light-matter coupling and subwavelength energy confinement they offer. Yet, the spectral narrowness of the phonon bands and difficulty to tune the phonon polariton properties hinder further progress in this field. SrTiO3 - a prototype perovskite oxide - has recently attracted attention due to two prominent far-infrared phono…
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Phonon polaritons are promising for infrared applications due to a strong light-matter coupling and subwavelength energy confinement they offer. Yet, the spectral narrowness of the phonon bands and difficulty to tune the phonon polariton properties hinder further progress in this field. SrTiO3 - a prototype perovskite oxide - has recently attracted attention due to two prominent far-infrared phonon polaritons bands, albeit without any tuning reported so far. Here we show, using cryogenic infrared near-field microscopy, that long-propagating surface phonon polaritons are present both in bare SrTiO3 and in LaAlO3/SrTiO3 heterostructures hosting a two-dimensional electron gas. The presence of the two-dimensional electron gas increases dramatically the thermal variation of the upper limit of the surface phonon polariton band due to temperature dependent polaronic screening of the surface charge carriers. Furthermore, we demonstrate a tunability of the upper surface phonon polariton frequency in LaAlO3/SrTiO3 via electrostatic gating. Our results suggest that oxide interfaces are a new platform bridging unconventional electronics and long-wavelength nanophotonics.
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Submitted 13 November, 2023;
originally announced December 2023.
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A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces
Authors:
Siobhan McKeown Walker,
Margherita Boselli,
Emanuel A. Martínez,
Stefano Gariglio,
Flavio Y. Bruno,
Felix Baumberger
Abstract:
We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. We demonstrate the possibility of tuning the electronic density in A…
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We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. We demonstrate the possibility of tuning the electronic density in Al/STO by varying the Al layer thickness and show that the electronic structure evolution is well described by self-consistent tight binding supercell calculations, but differs qualitatively from a rigid band shift model. We show that both 2DES are strongly coupled to longitudinal optical phonons, in agreement with previous reports of a polaronic ground state in similar STO based 2DESs. Tuning the electronic density in Al/STO to match that of LAO/STO and comparing both systems, we estimate that the intrinsic LAO/STO 2DES has a bare band width of ~ 60 meV and a carrier density of ~ 6 10^13 cm-2.
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Submitted 11 February, 2022;
originally announced February 2022.
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Electronic transport in sub-micrometric channels at the LaAlO$_{3}$/SrTiO$_{3}$ interface
Authors:
Margherita Boselli,
Gernot Scheerer,
Michele Filippone,
Weiwei Luo,
Adrien Waelchli,
Alexey B. Kuzmenko,
Stefano Gariglio,
Thierry Giamarchi,
Jean-Marc Triscone
Abstract:
Nanoscale channels realized at the conducting interface between LaAlO$_{3}$ and SrTiO$_{3}$ provide a perfect playground to explore the effect of dimensionality on the electronic properties of complex oxides. Here we compare the electric transport properties of devices realized using the AFM-writing technique and conventional photo-lithography. We find that the lateral size of the conducting paths…
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Nanoscale channels realized at the conducting interface between LaAlO$_{3}$ and SrTiO$_{3}$ provide a perfect playground to explore the effect of dimensionality on the electronic properties of complex oxides. Here we compare the electric transport properties of devices realized using the AFM-writing technique and conventional photo-lithography. We find that the lateral size of the conducting paths has a strong effect on their transport behavior at low temperature. We observe a crossover from metallic to insulating regime occurring at about 50 K for channels narrower than 100 nm. The insulating upturn can be suppressed by the application of a positive backgate. We compare the behavior of nanometric constrictions in lithographically patterned channels with the result of model calculations and we conclude that the experimental observations are compatible with the physics of a quantum point contact.
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Submitted 16 September, 2020;
originally announced September 2020.
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High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces
Authors:
Weiwei Luo,
Margherita Boselli,
Jean-Marie Poumirol,
Ivan Ardizzone,
Jeremie Teyssier,
Dirk van der Marel,
Stefano Gariglio,
Jean-Marc Triscone,
Alexey B. Kuzmenko
Abstract:
Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6…
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Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6 K. We show that the near-field optical signal, in particular its phase component, is highly sensitive to the transport properties of the electron system present at the interface. Our modelling reveals that such sensitivity originates from the interaction of the AFM tip with coupled plasmon-phonon modes with a small penetration depth. The model allows us to quantitatively correlate changes in the optical signal with the variation of the 2DES transport properties induced by cooling and by electrostatic gating. To probe the spatial resolution of the technique, we image conducting nano-channels written in insulating heterostructures with a voltage-biased tip of an atomic force microscope.
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Submitted 13 May, 2019;
originally announced May 2019.
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Artificial quantum confinement in LAO3/STO heterostructure
Authors:
Marco Caputo,
Margherita Boselli,
Alessio Filippetti,
Sebastien Lamal,
Danfeng Li,
Alla Chickina,
Claudia Cancellieri,
Thorsten Schmitt,
Jean-Marc Triscone,
Philippe Ghosez,
Stefano Gariglio,
Vladimir N. Strocov
Abstract:
Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation o…
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Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands.
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Submitted 26 March, 2019;
originally announced March 2019.
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Modulation of superconductivity by quantum confinement in doped strontium titanate
Authors:
Davide Valentinis,
Zhenping Wu,
Stefano Gariglio,
Dangfeng Li,
Gernot Scheerer,
Margherita Boselli,
Jean-Marc Triscone,
Dirk van der Marel,
Christophe Berthod
Abstract:
Quantum confinement in a thin-film geometry offers viable routes for tuning the critical properties of superconductors through modification of both density of states and pairing interaction. Low-density systems like doped strontium titanate are especially susceptible to these confinement-induced effects. In this paper, we show that the superconducting critical temperature $T_c$ is enhanced through…
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Quantum confinement in a thin-film geometry offers viable routes for tuning the critical properties of superconductors through modification of both density of states and pairing interaction. Low-density systems like doped strontium titanate are especially susceptible to these confinement-induced effects. In this paper, we show that the superconducting critical temperature $T_c$ is enhanced through quantum confinement in SrTiO$_3$/SrTi$_{1-x}$Nb$_x$O$_3$/SrTiO$_3$ heterostructures at $x=1\%$ concentration, by measuring resistivity transitions and the Hall carrier density for different thicknesses of the doped layer. We observe a nonmonotonic raise of $T_c$ with decreasing layer thickness at constant carrier density as estimated from the Hall effect. We analyze the results by solving a two-band model with a pairing interaction reproducing the density-dependent $T_c$ of doped SrTiO$_3$ in the bulk, that we confine to a potential well established self-consistently by the charged Nb dopants. The evolution of the theoretical $T_c$ with thickness agrees well with experiments. We point out the possible role of density inhomogeneities and suggest novel methods for engineering superconductivity in epitaxial thin films.
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Submitted 24 November, 2018;
originally announced November 2018.
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Probing Quantum Confinement and Electronic Structure at Polar Oxide Interfaces
Authors:
Danfeng Li,
Sébastien Lemal,
Stefano Gariglio,
Zhenping Wu,
Alexandre Fête,
Margherita Boselli,
Philippe Ghosez,
Jean-Marc Triscone
Abstract:
Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such structures, a reconfiguration of the charge landscape sets in at the interface via chemical modifications, adsorbates or charge transfer. In the latter case, one…
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Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such structures, a reconfiguration of the charge landscape sets in at the interface via chemical modifications, adsorbates or charge transfer. In the latter case, one may expect a local electronic doping of one material: one sparkling example is the two-dimensional electron liquid (2DEL) appearing in SrTiO$_3$ once covered by a polar LaAlO$_3$ layer. Here we show that tuning the formal polarisation of a (La,Al)$_{1-x}$(Sr,Ti)$_x$O$_3$ (LASTO:$x$) overlayer through chemical composition modifies the quantum confinement of the 2DEL in SrTiO$_3$ and its electronic band structure. The analysis of the behaviour in magnetic field of superconducting field-effect devices reveals, in agreement with $ab\ initio$ calculations and self-consistent Poisson-Schrödinger modelling, that quantum confinement and energy splitting between electronic bands of different symmetries strongly depend on interface charge densities. These results not only strongly support the polar discontinuity mechanisms with a full charge transfer to explain the origin of the 2DEL at the celebrated LaAlO$_3$/SrTiO$_3$ interface, but also demonstrate an effective tool for tailoring the electronic structure at oxide interfaces.
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Submitted 11 September, 2018;
originally announced September 2018.
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Magneto-transport study of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures
Authors:
W. Liu,
S. Gariglio,
A. F,
D. Li,
M. Boselli,
D. Stornaiuolo,
J. -M. Triscone
Abstract:
We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the…
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We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.
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Submitted 18 May, 2015;
originally announced May 2015.
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NMR study of electronic correlations in Mn-doped Ba(Fe1-xCox)2As2 and BaFe(As1-xPx)2
Authors:
D. LeBoeuf,
Y. Texier,
M. Boselli,
A. Forget,
D. Colson,
J. Bobroff
Abstract:
We probe the real space electronic response to a local magnetic impurity in isovalent and heterovalent doped BaFe2As2 (122) using Nuclear Magnetic Resonance (NMR). The local moments carried by Mn impurities doped into Ba(Fe1-xCox)2As2(Co-122) and BaFe(As1-xPx)2(P-122) at optimal doping induce a spin polarization in the vicinity of the impurity. The amplitude, shape and extension of this polarisati…
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We probe the real space electronic response to a local magnetic impurity in isovalent and heterovalent doped BaFe2As2 (122) using Nuclear Magnetic Resonance (NMR). The local moments carried by Mn impurities doped into Ba(Fe1-xCox)2As2(Co-122) and BaFe(As1-xPx)2(P-122) at optimal doping induce a spin polarization in the vicinity of the impurity. The amplitude, shape and extension of this polarisation is given by the real part of the susceptibility chi'(r) of FeAs layers, and is consequently related to the nature and strength of the electronic correlations present in the system. We study this polarisation using 75As NMR in Co-122 and both 75As and 31P NMR in P-122. The NMR spectra of Mn-doped materials is made of two essential features. First is a satellite line associated with nuclei located as nearest neighbor of Mn impurities. The analysis of the temperature dependence of the shift of this satellite line shows that Mn local moments behave as isolated Curie moments. The second feature is a temperature dependent broadening of the central line. We show that the broadening of the central line follows the susceptibility of Mn local moments, as expected from typical RKKY-like interactions. This demonstrates that the susceptibility chi'(r) of FeAs layers does not make significant contribution to the temperature dependent broadening of the central line. chi'(r) is consequently only weakly temperature dependent in optimally doped Co-122 and P-122. This behaviour is in contrast with that of strongly correlated materials such as underdoped cuprate high-Tc superconductors where the central line broadens faster than the impurity susceptibility grows, because of the development of strong magnetic correlations when T is lowered. Moreover, the FeAs layer susceptibility is found quantitatively similar in both heterovalent doped and isolvalent doped BaFe2As2.
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Submitted 24 October, 2013; v1 submitted 18 October, 2013;
originally announced October 2013.
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A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers
Authors:
E. J. R. de Oliveira,
E. Dias Cabral,
M. A. Boselli,
I. C. da Cunha Lima
Abstract:
We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band determining the extended ("metallic" transport) or localized (hopping by thermal excitation) nature of the states at and near the Fermi level. Magnetic or…
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We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band determining the extended ("metallic" transport) or localized (hopping by thermal excitation) nature of the states at and near the Fermi level. Magnetic order and resistivity are inter-related due to the influence of the spin polarization of the impurity band and the effect of the Zeeman splitting on the mobility edge. We obtain, for a given range of Mn concentration and carrier density, a "metallic" behavior in which the transport by extended carriers dominates at low temperature, and is dominated by the thermally excited localized carriers near and above the transition temperature. This gives rise to a conspicuous hump of the resistivity which has been experimentally observed and brings light onto the relationship between transport and magnetic properties of this material.
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Submitted 3 November, 2010;
originally announced November 2010.
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On the nature of the spin-polarized hole states in a quasi-two-dimensional GaMnAs ferromagnetic layer
Authors:
E. Dias Cabral,
M. A. Boselli,
A. T. da Cunha Lima,
A. Ghazali,
I. C. da Cunha Lima
Abstract:
A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering approximation. Using parameters corresponding to GaMnAs thin layers, a wide range of Mn concentrations and hole densities have been explored to understand the nature, localized or extended, of the spin-polarized holes…
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A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering approximation. Using parameters corresponding to GaMnAs thin layers, a wide range of Mn concentrations and hole densities have been explored to understand the nature, localized or extended, of the spin-polarized holes at the Fermi level for several values of the average magnetization of the Mn ystem. We show that, for a certain interval of Mn and hole densities, an increase on the magnetic order of the Mn ions come together with a change of the nature of the states at the Fermi level. This fact provides a delocalization of spin-polarized extended states anti-aligned to the average Mn magnetization, and a higher spin-polarization of the hole gas. These results are consistent with the occurrence of ferromagnetism with relatively high transition temperatures observed in some thin film samples and multilayered structures of this material.
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Submitted 2 February, 2007;
originally announced February 2007.
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Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures
Authors:
E. J. R. Oliveira,
A. T. da Cunha Lima,
M. A. Boselli,
G. M. Sipahi,
S. C. P. Rodrigues,
I. C. da Cunha Lima
Abstract:
The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the…
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The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials.
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Submitted 10 October, 2006;
originally announced October 2006.
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Charge and spin distributions in GaMnAs/GaAs Ferromagnetic Multilayers
Authors:
S. C. P. Rodrigues,
L. M. R. Scolfaro,
J. R. Leite,
I. C. da Cunha Lima,
G. M. Sipahi,
M. A. Boselli
Abstract:
A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration (considered as 5% in our calculation) makes it possible to assume the density of magnetic moments as a continuous distribution, when treating the magnetic int…
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A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration (considered as 5% in our calculation) makes it possible to assume the density of magnetic moments as a continuous distribution, when treating the magnetic interaction between holes and the localized moment on the Mn(++) sites. Our calculation shows the distribution of heavy holes and light holes in the structure. A strong spin-polarization is observed, and the charge is concentrated mostly on the GaMnAs layers, due to heavy and light holes with their total angular momentum aligned anti-parallel to the average magnetization. The charge and spin distributions are analyzed in terms of their dependence on the number of multilayers, the widths of the GaMnAs and GaAs layers, and the width of lateral GaAs layers at the borders of the structure.
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Submitted 13 July, 2004;
originally announced July 2004.
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Indirect exchange in GaMnAs bilayers via spin-polarized inhomogeneous hole gas: Monte Carlo simulation
Authors:
M. A. Boselli,
I. C. da Cunha Lima,
A. Ghazali
Abstract:
The magnetic order resulting from an indirect exchange between magnetic moments provided by spin-polarized hole gas in the metallic phase of a GaMnAs double layer structure is studied via Monte Carlo simulation. The coupling mechanism involves a perturbative calculation in second order of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarizat…
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The magnetic order resulting from an indirect exchange between magnetic moments provided by spin-polarized hole gas in the metallic phase of a GaMnAs double layer structure is studied via Monte Carlo simulation. The coupling mechanism involves a perturbative calculation in second order of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas due to the existence of an average magnetization in the magnetic layers, establishing, in this way, a self-consistency between the magnetic order and the electronic structure. That interaction leads to an internal ferromagnetic order inside each layer, and a parallel arrangement between their magnetizations, even in the case of thin layers. This fact is analyzed in terms of the inter- and intra-layer interactions.
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Submitted 19 December, 2002;
originally announced December 2002.
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Spin-polarized transport in GaMnAs multilayers
Authors:
L. Loureiro da Silva,
M. A. Boselli,
X. F. Wang,
I. C. da Cunha Lima,
A. Ghazali
Abstract:
The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into account the direct Coulomb Hartree and exchange-correlation terms, besides the sp-d exchange interaction with the Mn magnetic moments.
The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into account the direct Coulomb Hartree and exchange-correlation terms, besides the sp-d exchange interaction with the Mn magnetic moments.
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Submitted 8 May, 2001; v1 submitted 7 May, 2001;
originally announced May 2001.
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Hole spin polarization in GaAlAs:Mn structures
Authors:
A. Ghazali,
I. C. da Cunha Lima,
M. A. Boselli
Abstract:
A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.
A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.
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Submitted 29 January, 2001; v1 submitted 6 October, 2000;
originally announced October 2000.
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Ferromagnetism and Canted Spin Phase in AlAs/GaMnAs Single Quantum Wells: Monte Carlo Simulation
Authors:
M. A. Boselli,
A. Ghazali,
I. C. da Cunha Lima
Abstract:
The magnetic order resulting from a confinement-adapted Ruderman-Kittel-Kasuya-Yosida indirect exchange between magnetic moments in the metallic phase of a AlAs/Ga(1-x)Mn(x)As quantum well is studied by Monte Carlo simulation. This coupling mechanism involves magnetic moments and carriers (holes), both coming from the same Mn(2+) ions. It leads to a paramagnetic, a ferromagnetic, or a canted spi…
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The magnetic order resulting from a confinement-adapted Ruderman-Kittel-Kasuya-Yosida indirect exchange between magnetic moments in the metallic phase of a AlAs/Ga(1-x)Mn(x)As quantum well is studied by Monte Carlo simulation. This coupling mechanism involves magnetic moments and carriers (holes), both coming from the same Mn(2+) ions. It leads to a paramagnetic, a ferromagnetic, or a canted spin phase, depending on the carrier concentration, and on the magnetic layer width. It is shown that high transition temperatures may be obtained.
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Submitted 16 February, 2000;
originally announced February 2000.
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Magnetic ordering in GaAlAs:Mn double well structure
Authors:
M. A. Boselli,
I. C. da Cunha Lima,
A. Ghazali
Abstract:
The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs: Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on the barrier width and the hole concentration a ferromagnetic or a spin-glass order can be established…
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The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs: Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on the barrier width and the hole concentration a ferromagnetic or a spin-glass order can be established.
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Submitted 1 December, 1999;
originally announced December 1999.
