Operando XPS in Reactive Plasmas: The Importance of The Wall Reactions
Authors:
J. Trey Diulus,
Ashley R. Head,
Jorge Anibal Boscoboinik,
Andrei Kolmakov
Abstract:
Advancements in differential pumping and electron optics over the past few decades have enabled x-ray photoelectron spectroscopy (XPS) measurements at (near-)ambient pressures, bridging the pressure gap for characterizing realistic sample chemistries. Recently, we demonstrated the capabilities of an ambient pressure XPS (APXPS) setup for in-situ plasma environment measurements, allowing plasma-sur…
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Advancements in differential pumping and electron optics over the past few decades have enabled x-ray photoelectron spectroscopy (XPS) measurements at (near-)ambient pressures, bridging the pressure gap for characterizing realistic sample chemistries. Recently, we demonstrated the capabilities of an ambient pressure XPS (APXPS) setup for in-situ plasma environment measurements, allowing plasma-surface interactions to be studied in operando rather than using the traditional before-and-after analysis approach. This new plasma-XPS technique facilitates the identification of reaction intermediates critical for understanding plasma-assisted surface processes relevant to semiconductor nanomanufacturing, such as physical vapor deposition, etching, atomic layer deposition, etc. In this report, we apply the plasma-XPS approach to monitor real-time surface chemical changes on a model Ag(111) single crystal exposed to oxidizing and reducing plasmas. We correlate surface-sensitive data with concurrent gas-phase XPS measurements and residual gas mass-spectra analysis of species generated during plasma exposure, highlighting the significant role of plasma-induced chamber wall reactions. Ultimately, we demonstrate that plasma-XPS provides comprehensive insights into both surface and gas-phase chemistry, establishing it as a versatile and dynamic characterization tool with broad applications in microelectronics research.
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Submitted 26 February, 2025;
originally announced February 2025.
Operando Plasma-XPS for Process Monitoring: Hydrogenation of Copper Oxide Confined Under h-BN Case Study
Authors:
J. Trey Diulus,
Andrew E. Naclerio,
Anibal Boscoboinik,
Ashley R. Head,
Evgheni Strelcov,
Piran R. Kidambi,
Andrei Kolmakov
Abstract:
We demonstrate that ambient pressure x-ray photoelectron spectroscopy (APXPS) can be used for in situ studies of dynamic changes in surface chemistry in a plasma environment. Hexagonal boron nitride (h-BN) was used in this study as a model system since it exhibits a wide array of unique chemical, optical, and electrical properties that make it a prospective material for advanced electronics. To be…
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We demonstrate that ambient pressure x-ray photoelectron spectroscopy (APXPS) can be used for in situ studies of dynamic changes in surface chemistry in a plasma environment. Hexagonal boron nitride (h-BN) was used in this study as a model system since it exhibits a wide array of unique chemical, optical, and electrical properties that make it a prospective material for advanced electronics. To better understand the stability and surface chemistry of h-BN during plasma-assisted processing, we used polycrystalline Cu foils with single-layer h-BN, grown via chemical vapor deposition (CVD), and tracked in real-time the plasma-induced reduction of the underlying Cu oxide using APXPS equipped with 22 kHz 75 W discharge plasma source operating at 13 Pa. Residual gas analysis (RGA) mass-spectra were concurrently collected during plasma-XPS to track reaction products formed during plasma exposure. A clear reduction of CuxO is seen, while an h-BN layer remains intact, suggesting H radical species can attack the exposed and h-BN-covered Cu oxide patches and partially reduce the underlying substrate. In addition to the demonstration and discussion of plasma-XPS capabilities, our results indicate the h-BN encapsulated metallic Cu interface might be repaired without significantly damaging the overlaying h-BN, which is of practical importance for the development of h-BN encapsulated devices and interfaces
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Submitted 2 January, 2024;
originally announced January 2024.
