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Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$
Authors:
W. Román Acevedo,
M. H. Aguirre,
C. Ferreyra,
M. J. Sánchez,
M. Rengifo,
C. A. M. van den Bosch,
A. Aguadero,
B. Noheda,
D. Rubi
Abstract:
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. Ho…
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Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices
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Submitted 7 October, 2021;
originally announced October 2021.
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Large memcapacitance and memristance at Nb:SrTiO$_{3}$ / La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-δ}$ Topotactic Redox Interface
Authors:
W. R. Acevedo,
C. A. M. van den Bosch,
M. H. Aguirre,
C. Acha,
A. Cavallaro,
C. Ferreyra,
M. J. Sánchez,
L. Patrone,
A. Aguadero,
D. Rubi
Abstract:
The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large…
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The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-δ}$ (LSMCO, 0 $\leq$ $δ$ $\leq$ 0.62). We demonstrate that the multi-mem behaviour originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO$_{3}$/LSMCO/Pt devices a memcapacitive effect C$_{HIGH}$/C$_{LOW}$ ~ 100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology.
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Submitted 28 January, 2020; v1 submitted 14 May, 2019;
originally announced May 2019.
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Quenching the CME via the gravitational anomaly and holography
Authors:
Karl Landsteiner,
Esperanza Lopez,
Guillermo Milans del Bosch
Abstract:
In the presence of a gravitational contribution to the chiral anomaly, the chiral magnetic effect induces an energy current proportional to the square of the temperature in equilibrium. In holography the thermal state corresponds to a black hole. We numerically study holographic quenches in which a planar shell of scalar matter falls into a black hole and rises its temperature. During the process…
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In the presence of a gravitational contribution to the chiral anomaly, the chiral magnetic effect induces an energy current proportional to the square of the temperature in equilibrium. In holography the thermal state corresponds to a black hole. We numerically study holographic quenches in which a planar shell of scalar matter falls into a black hole and rises its temperature. During the process the momentum density (energy current) is conserved. The energy current has two components, a non-dissipative one induced by the anomaly and a dissipative flow component. The dissipative component can be measured via the drag it asserts on an additional auxiliary color charge. Our results indicate strong suppression very far from equilibrium.
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Submitted 25 September, 2017;
originally announced September 2017.
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Planar and Stripe Orders of Doped Mott Insulators In Dual Spin Models
Authors:
Marco Bosch,
Zohar Nussinov
Abstract:
We focus on very general, very large U, doped Mott Insulators with arbitrary hopping and interactions. We provide simple testimony to the competition between magnetic and superconducting orders in these systems. By mapping hard core bosons, spinless, and spinful fermions onto XXZ models, we aim to make very simple precise statements. We try to address optimal and expected filling fractions of ho…
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We focus on very general, very large U, doped Mott Insulators with arbitrary hopping and interactions. We provide simple testimony to the competition between magnetic and superconducting orders in these systems. By mapping hard core bosons, spinless, and spinful fermions onto XXZ models, we aim to make very simple precise statements. We try to address optimal and expected filling fractions of holes within the plane and on stripes in a variety of hole and hole pair geometries. We examine the role of attractions/repulsion amongst hole pairs and single holes, and provide trivial expected numerical values for filling fractions in various scenarios. We demnostrate that plaquette states seem to naturally provide the correct stripe filling fractions.
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Submitted 3 September, 2002; v1 submitted 30 August, 2002;
originally announced August 2002.
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Kinetic energy driven stripe formation and pairing in repulsive electronic systems
Authors:
Marco Bosch,
Zohar Nussinov
Abstract:
We study repulsive Hubbard and t-J type systems on a square lattice (long believed to capture certain quintessential aspects of the high temperature superconductors). These models (alongside the parent compounds of the high temperature superconductors) are antiferromagnetic in the absence of hole doping. As we illustrate, a unifying underlying principle for the dynamics of holes introduced by dopi…
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We study repulsive Hubbard and t-J type systems on a square lattice (long believed to capture certain quintessential aspects of the high temperature superconductors). These models (alongside the parent compounds of the high temperature superconductors) are antiferromagnetic in the absence of hole doping. As we illustrate, a unifying underlying principle for the dynamics of holes introduced by doping rationalizes the emergence of nonuniform electronic structures- "stripes" and possible pairing tendencies therein. Specifically, our analysis invokes the following (numerically verified) sublattice parity principle: a strong antiferromagnetic background forces injected holes to hop in steps of two such that they always remain on the same sub lattice. When applied to a domain wall in an antiferromagnet, this simple principle naturally gives rise to (bond centered) stripes. We demonstrate that the holes are self-consistently localized on stripes. Extending this picture, we then show that the holes on a stripe favor the formation of pairs on neighboring rungs or sites. Throughout this work much emphasis is placed on the problem of a two leg ladder immersed in a staggered magnetic field. Although we will focus on the square lattice, our considerations may be extended to similar electronic structures appearing in other models on bipartite lattices when these exhibit antiferromagnetic correlations with an underlying sublattice structure.
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Submitted 14 March, 2016; v1 submitted 20 August, 2002;
originally announced August 2002.
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Do shifting Bragg peaks of cuprate stripes reveal fractionally charged kinks?
Authors:
Marco Bosch,
Wim van Saarloos,
Jan Zaanen
Abstract:
The stripe phases found in correlated oxides can be viewed as an ordering of the solitons associated with doping the Mott-insulating state. Inspired by the recent observation that the stripes tilt away from the main axis of the crystal lattice in the regime x = 1/8, we propose that a new type of stripe phase is realized in the large doping regime. This new phase should be viewed as a doped versi…
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The stripe phases found in correlated oxides can be viewed as an ordering of the solitons associated with doping the Mott-insulating state. Inspired by the recent observation that the stripes tilt away from the main axis of the crystal lattice in the regime x = 1/8, we propose that a new type of stripe phase is realized in the large doping regime. This new phase should be viewed as a doped version of the microscopically insulating x = 1/8 stripes. The topological excitations associated with the extra doping are fractionally charged kinks along the stripes whose motions make the stripe fluctuate. We argue that the directional degree of freedom of the kinks might order, causing the stripe phase to tilt. Quantitative predictions follow for the doping dependence of the tilt angle, which in turn can be used to determine the fundamental charge quantum associated with the stripe phase.
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Submitted 14 March, 2000;
originally announced March 2000.
