Showing 1–19 of 19 results for author: Borsoi, F

Optimising germanium hole spin qubits with a room-temperature magnet

Authors: Cecile X. Yu, Barnaby van Straaten, Alexander S. Ivlev, Valentin John, Stefan D. Oosterhout, Lucas E. A. Stehouwer, Francesco Borsoi, Giordano Scappucci, Menno Veldhorst

Abstract: Germanium spin qubits exhibit strong spin-orbit interaction, which allow for high-fidelity qubit control, but also provide a strong dependence on the magnetic field. Superconducting vector magnets are often used to minimize dephasing due to hyperfine interactions and to maximize spin control, but these compromise the sample space and thus challenge scalability. Here, we explore whether a permanent… ▽ More Germanium spin qubits exhibit strong spin-orbit interaction, which allow for high-fidelity qubit control, but also provide a strong dependence on the magnetic field. Superconducting vector magnets are often used to minimize dephasing due to hyperfine interactions and to maximize spin control, but these compromise the sample space and thus challenge scalability. Here, we explore whether a permanent magnet outside the cryostat can be used as an alternative. Operating in a hybrid mode with an internal and external magnet, we find that we can fine-tune the magnetic field to an in-plane orientation. We obtain a qubit dephasing time T2*=13 microseconds, Hahn-echo times T2H=88 microseconds, and an average single-qubit Clifford gate fidelity above 99.9%, from which we conclude that room temperature magnets allow for high qubit performance. Furthermore, we probe the qubit resonance frequency using only the external magnet, with the internal superconducting magnet switched off. Our approach may be used to scale semiconductor qubits and use the increased sample space for the integration of cryogenic control circuitry and wiring to advance to large-scale quantum processors. △ Less

Submitted 4 July, 2025; originally announced July 2025.

A two-dimensional 10-qubit array in germanium with robust and localised qubit control

Authors: Valentin John, Cécile X. Yu, Barnaby van Straaten, Esteban A. Rodríguez-Mena, Mauricio Rodríguez, Stefan Oosterhout, Lucas E. A. Stehouwer, Giordano Scappucci, Stefano Bosco, Maximilian Rimbach-Russ, Yann-Michel Niquet, Francesco Borsoi, Menno Veldhorst

Abstract: Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabricati… ▽ More Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabrication, and qubit control to realise a two-dimensional 10-spin qubit array, with qubits coupled up to four neighbours that can be controlled with high fidelity. By exploring the large parameter space of gate voltages and quantum dot occupancies, we demonstrate that plunger gate driving in the three-hole occupation enhances electric-dipole spin resonance (EDSR), creating a highly localised qubit drive. Our findings, confirmed with analytical and numerical models, highlight the crucial role of intradot Coulomb interaction and magnetic field direction. Furthermore, the ability to engineer qubits for robust control is a key asset for further scaling. △ Less

Submitted 17 February, 2025; v1 submitted 20 December, 2024; originally announced December 2024.

Comments: 10 pages, 3 figures

Modular Autonomous Virtualization System for Two-Dimensional Semiconductor Quantum Dot Arrays

Authors: Anantha S. Rao, Donovan Buterakos, Barnaby van Straaten, Valentin John, Cécile X. Yu, Stefan D. Oosterhout, Lucas Stehouwer, Giordano Scappucci, Menno Veldhorst, Francesco Borsoi, Justyna P. Zwolak

Abstract: Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders indep… ▽ More Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders independent tuning of chemical potentials and interdot couplings. While virtual gates offer a practical solution, determining all the required cross-capacitance matrices accurately and efficiently in large quantum dot registers is an open challenge. Here, we establish a modular automated virtualization system (MAViS) -- a general and modular framework for autonomously constructing a complete stack of multilayer virtual gates in real time. Our method employs machine learning techniques to rapidly extract features from two-dimensional charge stability diagrams. We then utilize computer vision and regression models to self-consistently determine all relative capacitive couplings necessary for virtualizing plunger and barrier gates in both low- and high-tunnel-coupling regimes. Using MAViS, we successfully demonstrate accurate virtualization of a dense two-dimensional array comprising ten quantum dots defined in a high-quality Ge/SiGe heterostructure. Our work offers an elegant and practical solution for the efficient control of large-scale semiconductor quantum dot systems. △ Less

Submitted 6 May, 2025; v1 submitted 19 November, 2024; originally announced November 2024.

Comments: 14 pages, 5 figures, 9 pages of supplemental material

Journal ref: Phys. Rev. X 15, 021034 (2025)

Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale

Authors: Lucas E. A. Stehouwer, Cécile X. Yu, Barnaby van Straaten, Alberto Tosato, Valentin John, Davide Degli Esposti, Asser Elsayed, Davide Costa, Stefan D. Oosterhout, Nico W. Hendrickx, Menno Veldhorst, Francesco Borsoi, Giordano Scappucci

Abstract: Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit low-disorder epitaxial strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micron-scale dev… ▽ More Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit low-disorder epitaxial strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micron-scale devices comprising of up to ten quantum dots and four rf-charge sensors arranged in a two-dimensional array. We demonstrate an average charge noise of $\sqrt{S_{0}}=0.3(1)$ $μ\mathrm{eV}/\sqrt{\mathrm{Hz}}$ at 1 Hz across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish hole-spin qubit control in these heterostructures and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the power spectral density components arising from the hyperfine interaction with $^{73}$Ge spinful isotopes and identify coherence modulations associated with the interaction with the $^{29}$Si nuclear spin bath near the Ge quantum well. We estimate an integrated hyperfine noise amplitude $σ_f$ of 180(8) kHz from $^{73}$Ge and of 47(5) kHz from $^{29}$Si, underscoring the need for full isotopic purification of the qubit host environment. △ Less

Submitted 17 February, 2025; v1 submitted 18 November, 2024; originally announced November 2024.

Operating semiconductor quantum processors with hopping spins

Authors: Chien-An Wang, Valentin John, Hanifa Tidjani, Cécile X. Yu, Alexander S. Ivlev, Corentin Déprez, Floor van Riggelen-Doelman, Benjamin D. Woods, Nico W. Hendrickx, William I. L. Lawrie, Lucas E. A. Stehouwer, Stefan D. Oosterhout, Amir Sammak, Mark Friesen, Giordano Scappucci, Sander L. de Snoo, Maximilian Rimbach-Russ, Francesco Borsoi, Menno Veldhorst

Abstract: Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. While resonant control is used to execute high-fidelity quantum gates, the scalability is challenged by the integration of high-frequency oscillating signals, qubit crosstalk and heating. Here, we show that by engineering the hopping of spins between quantum dots with site-dependent spin quant… ▽ More Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. While resonant control is used to execute high-fidelity quantum gates, the scalability is challenged by the integration of high-frequency oscillating signals, qubit crosstalk and heating. Here, we show that by engineering the hopping of spins between quantum dots with site-dependent spin quantization axis, quantum control can be established with discrete signals. We demonstrate hopping-based quantum logic and obtain single-qubit gate fidelities of 99.97\%, coherent shuttling fidelities of 99.992\% per hop, and a two-qubit gate fidelity of 99.3\%, corresponding to error rates that have been predicted to allow for quantum error correction. We also show that hopping spins constitute a tuning method by statistically mapping the coherence of a 10-quantum dot system. Our results show that dense quantum dot arrays with sparse occupation could be developed for efficient and high-connectivity qubit registers. △ Less

Submitted 15 October, 2024; v1 submitted 28 February, 2024; originally announced February 2024.

Comments: main text with 18 pages and 3 figures, supplementary materials with 64 pages and 26 figures, in a single file

Bichromatic Rabi Control of Semiconductor Qubits

Authors: Valentin John, Francesco Borsoi, Zoltán György, Chien-An Wang, Gábor Széchenyi, Floor van Riggelen, William I. L. Lawrie, Nico W. Hendrickx, Amir Sammak, Giordano Scappucci, András Pályi, Menno Veldhorst

Abstract: Electrically driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially selective approach for large qubit arrays. By applying simultaneous microwave bursts to different… ▽ More Electrically driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially selective approach for large qubit arrays. By applying simultaneous microwave bursts to different gate electrodes, we observe multichromatic resonance lines and resonance anticrossings that are caused by the ac Stark shift. Our theoretical framework aligns with experimental data, highlighting interdot motion as the dominant mechanism for bichromatic driving. △ Less

Submitted 2 January, 2025; v1 submitted 3 August, 2023; originally announced August 2023.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 132, 067001 (2024)

A 2D quantum dot array in planar $^{28}$Si/SiGe

Authors: Florian K. Unseld, Marcel Meyer, Mateusz T. Mądzik, Francesco Borsoi, Sander L. de Snoo, Sergey V. Amitonov, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking… ▽ More Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking advantage of high-quality heterostructures and carefully designed gate patterns, we are able to form a tunnel coupled 2 $\times$ 2 quantum dot array in a $^{28}$Si/SiGe heterostructure. We are able to load a single electron in all four quantum dots, thus reaching the (1,1,1,1) charge state. Furthermore we characterise and control the tunnel coupling between all pairs of dots by measuring polarisation lines over a wide range of barrier gate voltages. Tunnel couplings can be tuned from about $30~\rm μeV$ up to approximately $400~\rm μeV$. These experiments provide a first step toward the operation of spin qubits in $^{28}$Si/SiGe quantum dots in two dimensions. △ Less

Submitted 6 June, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: 8 pages, 6 figures

Electrical control of uniformity in quantum dot devices

Authors: Marcel Meyer, Corentin Déprez, Timo R. van Abswoude, Dingshan Liu, Chien-An Wang, Saurabh Karwal, Stefan Oosterhout, Franscesco Borsoi, Amir Sammak, Nico W. Hendrickx, Giordano Scappucci, Menno Veldhorst

Abstract: Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the int… ▽ More Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots reducing the spread in pinch-off voltage by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays. △ Less

Submitted 24 November, 2022; originally announced November 2022.

Impact of junction length on supercurrent resilience against magnetic field in InSb-Al nanowire Josephson junctions

Authors: Vukan Levajac, Grzegorz P. Mazur, Nick van Loo, Francesco Borsoi, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, Sebastian Heedt, Leo P. Kouwenhoven, Ji-Yin Wang

Abstract: Semiconducting nanowire Josephson junctions represent an attractive platform to investigate the anomalous Josephson effect and detect topological superconductivity by studying Josephson supercurrent. However, an external magnetic field generally suppresses the supercurrent through hybrid nanowire junctions and significantly limits the field range in which the supercurrent phenomena can be studied.… ▽ More Semiconducting nanowire Josephson junctions represent an attractive platform to investigate the anomalous Josephson effect and detect topological superconductivity by studying Josephson supercurrent. However, an external magnetic field generally suppresses the supercurrent through hybrid nanowire junctions and significantly limits the field range in which the supercurrent phenomena can be studied. In this work, we investigate the impact of the length of InSb-Al nanowire Josephson junctions on the supercurrent resilience against magnetic fields. We find that the critical parallel field of the supercurrent can be considerably enhanced by reducing the junction length. Particularly, in 30 nm-long junctions supercurrent can persist up to 1.3 T parallel field - approaching the critical field of the superconducting film. Furthermore, we embed such short junctions into a superconducting loop and obtain the supercurrent interference at a parallel field of 1 T. Our findings are highly relevant for multiple experiments on hybrid nanowires requiring a magnetic field-resilient supercurrent. △ Less

Submitted 14 November, 2022; originally announced November 2022.

Comments: 17 pages, 5 figures in main text. 22 pages, 10 figures in supporting information

Shared control of a 16 semiconductor quantum dot crossbar array

Authors: Francesco Borsoi, Nico W. Hendrickx, Valentin John, Sayr Motz, Floor van Riggelen, Amir Sammak, Sander L. de Snoo, Giordano Scappucci, Menno Veldhorst

Abstract: The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires at least one unique control line, an approach that will become unsustainable when scaling to the required millions of qubits. Here, inspired by random access a… ▽ More The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires at least one unique control line, an approach that will become unsustainable when scaling to the required millions of qubits. Here, inspired by random access architectures in classical electronics, we introduce the shared control of semiconductor quantum dots to efficiently operate a two-dimensional crossbar array in planar germanium. We tune the entire array, comprising 16 quantum dots, to the few-hole regime and, to isolate an unpaired spin per dot, we confine an odd number of holes in each site. Moving forward, we establish a method for the selective control of the quantum dots interdot coupling and achieve a tunnel coupling tunability over more than 10 GHz. The operation of a quantum electronic device with fewer control terminals than tunable experimental parameters represents a compelling step forward in the construction of scalable quantum technology. △ Less

Submitted 14 September, 2022; originally announced September 2022.

Comments: 33 pages including supplementary information

Hard superconducting gap in germanium

Authors: Alberto Tosato, Vukan Levajac, Ji-Yin Wang, Casper J. Boor, Francesco Borsoi, Marc Botifoll, Carla N. Borja, Sara Martí-Sánchez, Jordi Arbiol, Amir Sammak, Menno Veldhorst, Giordano Scappucci

Abstract: The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free o… ▽ More The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free of subgap states (hard gap) has proven difficult. Here we solve this challenge by developing a low-disorder, oxide-free interface between high-mobility planar germanium and a germanosilicide parent superconductor. This superconducting contact is formed by the thermally-activated solid phase reaction between a metal (Pt) and the semiconductor heterostructure (Ge/SiGe). Electrical characterization reveals near-unity transparency in Josephson junctions and, importantly, a hard induced superconducting gap in quantum point contacts. Furthermore, we demonstrate phase control of a Josephson junction and study transport in a gated two-dimensional superconductor-semiconductor array towards scalable architectures. These results expand the quantum technology toolbox in germanium and provide new avenues for exploring monolithic superconductor-semiconductor quantum circuits towards scalable quantum information processing. △ Less

Submitted 8 December, 2022; v1 submitted 1 June, 2022; originally announced June 2022.

Journal ref: Communications Materials, 4, 23 (2023)

Parametric exploration of zero-energy modes in three-terminal InSb-Al nanowire devices

Authors: Ji-Yin Wang, Nick van Loo, Grzegorz P. Mazur, Vukan Levajac, Filip K. Malinowski, Mathilde Lemang, Francesco Borsoi, Ghada Badawy, Sasa Gazibegovic, Erik P. A. M. Bakkers, Marina Quintero-Perez, Sebastian Heedt, Leo P. Kouwenhoven

Abstract: We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field and junction transparencies. Identifying the lowest-energy state allows for the construction of lowest- and zero-energy state diagrams, which… ▽ More We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field and junction transparencies. Identifying the lowest-energy state allows for the construction of lowest- and zero-energy state diagrams, which show how the states evolve as a function of the aforementioned parameters. Importantly, comparing the diagrams taken for each end of the hybrids enables the identification of states which do not coexist simultaneously, ruling out a significant amount of the parameter space as candidates for a topological phase. Furthermore, altering junction transparencies filters out zero-energy states sensitive to a local gate potential. Such a measurement strategy significantly reduces the time necessary to identify a potential topological phase and minimizes the risk of falsely recognizing trivial bound states as Majorana zero modes. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: Main text: 12 pages, 9 figures. SupplementaryMaterials: 12 pages, 14 figures

Spin-mixing enhanced proximity effect in aluminum-based superconductor-semiconductor hybrids

Authors: G. P. Mazur, N. van Loo, J. Y. Wang, T. Dvir, G. Wang, A. Khindanov, S. Korneychuk, F. Borsoi, R. C. Dekker, G. Badawy, P. Vinke, S. Gazibegovic, E. P. A. M. Bakkers, M. Quintero-Perez, S. Heedt, L. P. Kouwenhoven

Abstract: In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. In this application, however, aluminum-based devices suffer from poor magnetic field compatibility. In this article, we resolve this limitation by showing that adatoms of heavy elements (e.g. platinum) increase the crit… ▽ More In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. In this application, however, aluminum-based devices suffer from poor magnetic field compatibility. In this article, we resolve this limitation by showing that adatoms of heavy elements (e.g. platinum) increase the critical field of thin aluminum films by more than a factor of two. Using tunnel junctions, we show that the increased field resilience originates from spin-orbit scattering introduced by Pt. We exploit this property in the context of the superconducting proximity effect in semiconductor-superconductor hybrids, where we show that InSb nanowires strongly coupled to Al/Pt films can maintain superconductivity up to 7T. The two-electron charging effect, a fundamental requirement for topological quantum computation, is shown to be robust against the presence of heavy adatoms. Additionally, we use non-local spectroscopy in a three-terminal geometry to probe the bulk of hybrid devices, showing that it remains free of sub-gap states. Finally, we demonstrate that semiconductor states which are proximitized by Al/Pt films maintain their ability to Zeeman-split in an applied magnetic field. Combined with the chemical stability and well-known fabrication routes of aluminum, Al/Pt emerges as the natural successor to Al-based systems and is a compelling alternative to other superconductors, whenever high-field resilience is required. △ Less

Submitted 21 February, 2022; originally announced February 2022.

Full parity phase diagram of a proximitized nanowire island

Authors: J. Shen, G. W. Winkler, F. Borsoi, S. Heedt, V. Levajac, J. Y. Wang, D. van Driel, D. Bouman, S. Gazibegovic, R. L. M. Op Het Veld, D. Car, J. A. Logan, M. Pendharkar, C. J. Palmstrom, E. P. A. M. Bakkers, L. P. Kouwenhoven, B. van Heck

Abstract: We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our nume… ▽ More We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity changes from $2e$ to $1e$ at a gate-dependent value of the magnetic field, $B^*$, decreasing from a high to a low limit upon increasing the gate voltage. In the gate voltage region between the two limits, which our numerical simulations indicate to be the most promising for locating Majorana zero modes, we observe correlated oscillations of peak spacings and heights. For positive gate voltages, the $2e$-$1e$ transition with low $B^*$ is due to the presence of non-topological states whose energy quickly disperses below the charging energy due to the orbital effect of the magnetic field. Our measurements demonstrate the importance of a careful exploration of the entire available phase space of a proximitized nanowire as a prerequisite to define future topological qubits. △ Less

Submitted 3 August, 2021; v1 submitted 18 December, 2020; originally announced December 2020.

Comments: 5 pages, 4 figures plus supplementary. v2: improved manuscript. v3: published version. Raw data and source code available at https://doi.org/10.4121/13333451.v4

Journal ref: Phys. Rev. B 104, 045422 (2021)

Single-shot fabrication of semiconducting-superconducting nanowire devices

Authors: Francesco Borsoi, Grzegorz P. Mazur, Nick van Loo, Michał P. Nowak, Léo Bourdet, Kongyi Li, Svetlana Korneychuk, Alexandra Fursina, Elvedin Memisevic, Ghada Badawy, Sasa Gazibegovic, Kevin van Hoogdalem, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Sebastian Heedt, Marina Quintero-Pérez

Abstract: Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for topological quantum computation. However, the search for Majorana signatures is challenging because reproducible hybrid devices with desired nanowire lengths and material parameters need to be reliably fabricated to perform systematic explor… ▽ More Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for topological quantum computation. However, the search for Majorana signatures is challenging because reproducible hybrid devices with desired nanowire lengths and material parameters need to be reliably fabricated to perform systematic explorations in gate voltages and magnetic fields. Here, we exploit a fabrication platform based on shadow walls that enables the in-situ, selective and consecutive depositions of superconductors and normal metals to form normal-superconducting junctions. Crucially, this method allows to realize devices in a single shot, eliminating fabrication steps after the synthesis of the fragile semiconductor/superconductor interface. At the atomic level, all investigated devices reveal a sharp and defect-free semiconducting-superconducting interface and, correspondingly, we measure electrically a hard induced superconducting gap. While our advancement is of crucial importance for enhancing the yield of complex hybrid devices, it also offers a straightforward route to explore new material combinations for hybrid devices. △ Less

Submitted 14 September, 2020; originally announced September 2020.

Shadow-wall lithography of ballistic superconductor-semiconductor quantum devices

Authors: Sebastian Heedt, Marina Quintero-Pérez, Francesco Borsoi, Alexandra Fursina, Nick van Loo, Grzegorz P. Mazur, Michał P. Nowak, Mark Ammerlaan, Kongyi Li, Svetlana Korneychuk, Jie Shen, May An Y. van de Poll, Ghada Badawy, Sasa Gazibegovic, Kevin van Hoogdalem, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of novel quantum devices and ultimately topological qubits whi… ▽ More The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of novel quantum devices and ultimately topological qubits while eliminating many fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables, in particular, the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Transmission phase read-out of a large quantum dot in a nanowire interferometer

Authors: Francesco Borsoi, Kun Zuo, Sasa Gazibegovic, Roy L. M. Op het Veld, Erik P. A. M. Bakkers, Leo P. Kouwenhoven, Sebastian Heedt

Abstract: Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the transmission phase of a quantum dot in a nanowire has not yet been established. Here, we exploit recent breakthroughs in the… ▽ More Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the transmission phase of a quantum dot in a nanowire has not yet been established. Here, we exploit recent breakthroughs in the growth of one-dimensional networks and demonstrate interferometric read-out in a nanowire-based architecture. In our two-path interferometer, we define a quantum dot in one branch and use the other path as a reference arm. We observe Fano resonances stemming from the interference between electrons that travel through the reference arm and undergo resonant tunnelling in the quantum dot. Between consecutive Fano peaks, the transmission phase exhibits phase lapses that are affected by the presence of multiple trajectories in the interferometer. These results provide critical insights for the design of future topological qubits. △ Less

Submitted 25 June, 2020; originally announced June 2020.

Comments: to be published in Nature Communications

Journal ref: Nat. Commun. 11, 3666 (2020)

Magnetic field resilient superconducting coplanar waveguide resonators for hybrid cQED experiments

Authors: J. G. Kroll, F. Borsoi, K. L. van der Enden, W. Uilhoorn, D. de Jong, M Quintero-Pérez, D. J. van Woerkom, A. Bruno, S. R. Plissard, D. Car, E. P. A. M. Bakkers, M. C. Cassidy, L. P. Kouwenhoven

Abstract: Superconducting coplanar waveguide resonators that can operate in strong magnetic fields are important tools for a variety of high frequency superconducting devices. Magnetic fields degrade resonator performance by creating Abrikosov vortices that cause resistive losses and frequency fluctuations, or suppressing superconductivity entirely. To mitigate these effects we investigate lithographically… ▽ More Superconducting coplanar waveguide resonators that can operate in strong magnetic fields are important tools for a variety of high frequency superconducting devices. Magnetic fields degrade resonator performance by creating Abrikosov vortices that cause resistive losses and frequency fluctuations, or suppressing superconductivity entirely. To mitigate these effects we investigate lithographically defined artificial defects in resonators fabricated from NbTiN superconducting films. We show that by controlling the vortex dynamics the quality factor of resonators in perpendicular magnetic fields can be greatly enhanced. Coupled with the restriction of the device geometry to enhance the superconductors critical field, we demonstrate stable resonances that retain quality factors $\simeq 10^5$ at the single photon power level in perpendicular magnetic fields up to $B_\perp \simeq$ 20 mT and parallel magnetic fields up to $B_\parallel \simeq$ 6 T. We demonstrate the effectiveness of this technique for hybrid systems by integrating an InSb nanowire into a field resilient superconducting resonator, and use it to perform fast charge readout of a gate defined double quantum dot at $B_\parallel =$ 1 T. △ Less

Submitted 11 September, 2018; originally announced September 2018.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Applied 11, 064053 (2019)

Parity transitions in the superconducting ground state of hybrid InSb-Al Coulomb islands

Authors: Jie Shen, Sebastian Heedt, Francesco Borsoi, Bernard Van Heck, Sasa Gazibegovic, Roy L. M. Op het Veld, Diana Car, John A. Logan, Mihir Pendharkar, Senja J. J. Ramakers, Guanzhong Wang, Di Xu, Daniel Bouman, Attila Geresdi, Chris J. Palmstrom, Erik P. A. M. Bakkers, Leo P. Kouwenhoven

Abstract: The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we stu… ▽ More The number of electrons in small metallic or semiconducting islands is quantized. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we study a hybrid superconducting-semiconducting island and find three typical GS evolutions in a parallel magnetic field: a robust 2e-periodic even-parity GS, a transition to a 2e-periodic odd-parity GS,and a transition from a 2e- to a 1e-periodic GS. The 2e-periodic odd-parity GS persistent in gate-voltage occurs when a spin-resolved subgap state crosses zero energy. For our 1e-periodic GSs we explicitly show the origin being a single zero-energy state gapped from the continuum, i.e. compatible with an Andreev bound states stabilized at zero energy or the presence of Majorana zero modes. △ Less

Submitted 5 November, 2018; v1 submitted 9 April, 2018; originally announced April 2018.

Journal ref: Nature Communicationsvolume 9, Article number: 4801 (2018)