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Chemical vapor deposited graphene: From synthesis to applications
Authors:
Satender Kataria,
Stefan Wagner,
Jasper Ruhkopf,
Aamit Gahoi,
Himadri Pandey,
Rainer Bornemann,
Sam Vaziri,
Anderson D. Smith,
Mikael Östling,
Max C. Lemme
Abstract:
Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD…
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Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process.
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Submitted 27 March, 2021;
originally announced March 2021.
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High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
Authors:
Sarah Riazimehr,
Satender Kataria,
Rainer Bornemann,
Peter Haring Bolivar,
Francisco Javier Garcia Ruiz,
Olof Engström,
Andres Godoy,
Max Christian Lemme
Abstract:
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO$_2$)/Si areas, where the graphene is contacted. Here, we utilize scanning photocurrent measurements to investigate the spatial dis…
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Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO$_2$)/Si areas, where the graphene is contacted. Here, we utilize scanning photocurrent measurements to investigate the spatial distribution and explain the physical origin of photocurrent generation in these devices. We observe distinctly higher photocurrents underneath the isolating region of graphene on SiO$_2$ adjacent to the Schottky junction of G/Si. A certain threshold voltage (V$_T$) is required before this can be observed, and its origins are similar to that of the threshold voltage in metal oxide semiconductor field effect transistors. A physical model serves to explain the large photocurrents underneath SiO$_2$ by the formation of an inversion layer in Si. Our findings contribute to a basic understanding of graphene / semiconductor hybrid devices which, in turn, can help in designing efficient optoelectronic devices and systems based on such 2D/3D heterojunctions.
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Submitted 30 May, 2017; v1 submitted 4 February, 2017;
originally announced February 2017.
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Optimizing the Optical and Electrical Properties of Graphene Ink Thin Films by Laser-annealing
Authors:
Sepideh Khandan Del,
Rainer Bornemann,
Andreas Bablich,
Heiko Schäfer-Eberwein,
Jiantong Li,
Torsten Kowald,
Mikael Östling,
Peter Haring-Bolívar,
Max. C. Lemme
Abstract:
We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop casting of high-concentration graphene ink. The resulting thin films are uniform and exhibit a transparency of more than 85% at 550 nm and a sheet resistance of about…
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We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop casting of high-concentration graphene ink. The resulting thin films are uniform and exhibit a transparency of more than 85% at 550 nm and a sheet resistance of about 30 kΩ/sq. These values constitute an increase of 45% in transparency, a reduction of surface roughness by a factor of four and a decrease of 70% in sheet resistance compared to unannealed films.
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Submitted 15 January, 2015;
originally announced January 2015.
