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2$Φ_{0}$-periodic magnetic interference in ballistic graphene Josephson junctions
Authors:
C. T. Ke,
A. W. Draelos,
A. Seredinski,
M. T. Wei,
H. Li,
M. Hernandez-Rivera,
K. Watanabe,
T. Taniguchi,
M. Yamamoto,
S. Tarucha,
Y. Bomze,
I. V. Borzenets,
F. Amet,
G. Finkelstein
Abstract:
We investigate supercurrent interference patterns measured as a function of magnetic field in ballistic graphene Josephson junctions. At high doping, the expected $Φ_{0}$-periodic "Fraunhofer" pattern is observed, indicating a uniform current distribution. Close to the Dirac point, we find anomalous interference patterns with an apparent 2$Φ_{0}$ periodicity, similar to that predicted for topologi…
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We investigate supercurrent interference patterns measured as a function of magnetic field in ballistic graphene Josephson junctions. At high doping, the expected $Φ_{0}$-periodic "Fraunhofer" pattern is observed, indicating a uniform current distribution. Close to the Dirac point, we find anomalous interference patterns with an apparent 2$Φ_{0}$ periodicity, similar to that predicted for topological Andreev bound states carrying a charge of $e$ instead of $2e$. This feature persists with increasing temperature, ruling out a non-sinusoidal current-phase relationship. It also persists in junctions in which sharp vacuum edges are eliminated. Our results indicate that the observed behavior may originate from an intrinsic property of ballistic graphene Josephson junctions, though the exact mechanism remains unclear.
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Submitted 19 June, 2019; v1 submitted 19 June, 2019;
originally announced June 2019.
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Scaling properties of noise-induced switching in a bistable tunnel diode circuit
Authors:
Stephen W. Teitsworth,
Matthew E. Olson,
Yuriy Bomze
Abstract:
Noise-induced switching between coexisting metastable states occurs in a wide range of far-from-equilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in tunneling structures such as semiconductor superlattices and tunnel diodes. In the case of tunnel diode circuits, noise-induced switching behavior is associated wi…
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Noise-induced switching between coexisting metastable states occurs in a wide range of far-from-equilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in tunneling structures such as semiconductor superlattices and tunnel diodes. In the case of tunnel diode circuits, noise-induced switching behavior is associated with negative differential resistance in the static current-voltage characteristics and bistability, i.e., the existence of two macroscopic current states for a given applied voltage. Noise effects are particularly strong near the onset and offset of bistable current behavior, corresponding to bifurcation points in the associated dynamical system. In this paper, we show that the tunnel diode system provides an excellent experimental platform for the precision measurement of scaling properties of mean switching times versus applied voltage near bifurcation points. More specifically, experimental data confirm that the mean switching time scales logarithmically as the 3/2 power of voltage difference over an exceptionally wide range of time scales and noise intensities.
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Submitted 22 February, 2019;
originally announced February 2019.
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Ballistic graphene Josephson junctions from the short to the long regime
Authors:
I. V. Borzenets,
F. Amet,
C. T. Ke,
A. W. Draelos,
M. T. Wei,
A. Seredinski,
K. Watanabe,
T. Taniguchi,
Y. Bomze,
M. Yamamoto,
S. Tarucha,
G Finkelstein
Abstract:
We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, $I_S$ is found to scale as $\propto \exp(-k_bT/δE)$. The extracted energies $δE$ are independent of the carrier density and pr…
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We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, $I_S$ is found to scale as $\propto \exp(-k_bT/δE)$. The extracted energies $δE$ are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As $T\rightarrow 0$ the critical current of a long (or short) junction saturates at a level determined by the product of $δE$ (or $Δ$) and the number of the junction's transversal modes.
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Submitted 11 October, 2016; v1 submitted 25 April, 2016;
originally announced April 2016.
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Critical current scaling in long diffusive graphene-based Josephson junctions
Authors:
Chung-Ting Ke,
Ivan V. Borzenets,
Anne W. Draelos,
Francois Amet,
Yuriy Bomze,
Gareth Jones,
Monica Craciun,
Saverio Russo,
Michihisa Yamamoto,
Seigo Tarucha,
Gleb Finkelstein
Abstract:
We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$μ$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5μ$A, while t…
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We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$μ$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5μ$A, while the Thouless energy, ETh, covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IcRn is found to scale linearly with ETh, as expected from theory. However, the ratio IcRn /ETh is found to be 0.1-0.2: much smaller than the predicted ~10 for long diffusive SNS junctions.
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Submitted 9 February, 2016; v1 submitted 9 February, 2016;
originally announced February 2016.
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Supercurrent in the quantum Hall regime
Authors:
Francois Amet,
Chung Ting Ke,
Ivan V. Borzenets,
Ying-Mei Wang,
Keji Watanabe,
Takashi Taniguchi,
Russell S. Deacon,
Michihisa Yamamoto,
Yuriy Bomze,
Seigo Tarucha,
Gleb Finkelstein
Abstract:
A novel promising route for creating topological states and excitations is to combine superconductivity and the quantum Hall (QH) effect. Despite this potential, signatures of superconductivity in the quantum Hall regime remain scarce, and a superconducting current through a QH weak link has so far eluded experimental observation. Here we demonstrate the existence of a new type of supercurrent-car…
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A novel promising route for creating topological states and excitations is to combine superconductivity and the quantum Hall (QH) effect. Despite this potential, signatures of superconductivity in the quantum Hall regime remain scarce, and a superconducting current through a QH weak link has so far eluded experimental observation. Here we demonstrate the existence of a new type of supercurrent-carrying states in a QH region at magnetic fields as high as 2Tesla. The observation of supercurrent in the quantum Hall regime marks an important step in the quest for exotic topological excitations such as Majorana fermions and parafermions, which may find applications in fault-tolerant quantum computations.
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Submitted 30 December, 2015;
originally announced December 2015.
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Phonon bottleneck in graphene-based Josephson junctions at millikelvin temperatures
Authors:
I. V. Borzenets,
U. C. Coskun,
H. T. Mebrahtu,
Yu. V. Bomze,
A. I. Smirnov,
G. Finkelstein
Abstract:
We examine the nature of the transitions between the normal and the superconducting branches of superconductor-graphene-superconductor Josephson junctions. We attribute the hysteresis between the switching (superconducting to normal) and retrapping (normal to superconducting) transitions to electron overheating. In particular, we demonstrate that the retrapping current corresponds to the critical…
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We examine the nature of the transitions between the normal and the superconducting branches of superconductor-graphene-superconductor Josephson junctions. We attribute the hysteresis between the switching (superconducting to normal) and retrapping (normal to superconducting) transitions to electron overheating. In particular, we demonstrate that the retrapping current corresponds to the critical current at an elevated temperature, where the heating is caused by the retrapping current itself. The superconducting gap in the leads suppresses the hot electron outflow, allowing us to further study electron thermalization by phonons at low temperatures ($T \lesssim 1$K). The relationship between the applied power and the electron temperature was found to be $P\propto T^3$, which we argue is consistent with cooling due to electron-phonon interactions.
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Submitted 26 December, 2012;
originally announced December 2012.
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Observation of Majorana Quantum Critical Behavior in a Resonant Level Coupled to a Dissipative Environment
Authors:
H. T. Mebrahtu,
I. V. Borzenets,
H. Zheng,
Y. V. Bomze,
A. I. Smirnov,
S. Florens,
H. U. Baranger,
G. Finkelstein
Abstract:
We investigate experimentally an exotic state of electronic matter obtained by fine-tuning to a quantum critical point (QCP), realized in a spin-polarized resonant level coupled to strongly dissipative electrodes. Several transport scaling laws near and far from equilibrium are measured, and then accounted for theoretically. Our analysis reveals a splitting of the resonant level into two quasi-ind…
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We investigate experimentally an exotic state of electronic matter obtained by fine-tuning to a quantum critical point (QCP), realized in a spin-polarized resonant level coupled to strongly dissipative electrodes. Several transport scaling laws near and far from equilibrium are measured, and then accounted for theoretically. Our analysis reveals a splitting of the resonant level into two quasi-independent Majorana modes, one strongly hybridized to the leads, and the other tightly bound to the quantum dot. Residual interactions involving these Majorana fermions result in the observation of a striking quasi-linear non-Fermi liquid scattering rate at the QCP. Our devices constitute a viable alternative to topological superconductors as a platform for studying strong correlation effects within Majorana physics.
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Submitted 16 December, 2012;
originally announced December 2012.
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Quantum Phase Transition in a Resonant Level Coupled to Interacting Leads
Authors:
Henok T. Mebrahtu,
Ivan V. Borzenets,
Dong E. Liu,
Huaixiu Zheng,
Yuriy V. Bomze,
Alex I. Smirnov,
Harold U. Baranger,
Gleb Finkelstein
Abstract:
An interacting one-dimensional electron system, the Luttinger liquid, is distinct from the "conventional" Fermi liquids formed by interacting electrons in two and three dimensions. Some of its most spectacular properties are revealed in the process of electron tunneling: as a function of the applied bias or temperature the tunneling current demonstrates a non-trivial power-law suppression. Here, w…
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An interacting one-dimensional electron system, the Luttinger liquid, is distinct from the "conventional" Fermi liquids formed by interacting electrons in two and three dimensions. Some of its most spectacular properties are revealed in the process of electron tunneling: as a function of the applied bias or temperature the tunneling current demonstrates a non-trivial power-law suppression. Here, we create a system which emulates tunneling in a Luttinger liquid, by controlling the interaction of the tunneling electron with its environment. We further replace a single tunneling barrier with a double-barrier resonant level structure and investigate resonant tunneling between Luttinger liquids. For the first time, we observe perfect transparency of the resonant level embedded in the interacting environment, while the width of the resonance tends to zero. We argue that this unique behavior results from many-body physics of interacting electrons and signals the presence of a quantum phase transition (QPT). In our samples many parameters, including the interaction strength, can be precisely controlled; thus, we have created an attractive model system for studying quantum critical phenomena in general. Our work therefore has broadly reaching implications for understanding QPTs in more complex systems, such as cold atoms and strongly correlated bulk materials.
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Submitted 9 August, 2012;
originally announced August 2012.
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Retrapping Current, Self-Heating, and Hysteretic Current-Voltage Curves in Ultra-Narrow Superconducting Aluminum Nanowires
Authors:
Peng Li,
Phillip M. Wu,
Yuriy Bomze,
Ivan V. Borzenets,
Gleb Finkelstein,
A. M. Chang
Abstract:
Hysteretic I-V (current-voltage) is studied in narrow Al nanowires. The nanowires have a cross section as small as 50 nm^2. We focus on the retapping current in a down-sweep of the current, at which a nanowire re-enters the superconducting state from a normal state. The retrapping current is found to be significantly smaller than the switching current at which the nanowire switches into the normal…
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Hysteretic I-V (current-voltage) is studied in narrow Al nanowires. The nanowires have a cross section as small as 50 nm^2. We focus on the retapping current in a down-sweep of the current, at which a nanowire re-enters the superconducting state from a normal state. The retrapping current is found to be significantly smaller than the switching current at which the nanowire switches into the normal state from a superconducting state during a current up-sweep. For wires of different lengths, we analyze the heat removal due to various processes, including electronic and phonon processes. For a short wires 1.5 um in length, electronic thermal conduction is effective; for longer wires 10um in length, phonon conduction becomes important. We demonstrate that the measured retrapping current as a function of temperature can be quantitatively accounted for by the selfheating occurring in the normal portions of the nanowires to better than 20 % accuracy. For the phonon processes, the extracted thermal conduction parameters support the notion of a reduced phase-space below 3-dimensions, consistent with the phonon thermal wavelength having exceeded the lateral dimensions at temperatures below ~ 1.3K. Nevertheless, surprisingly the best fit was achieved with a functional form corresponding to 3-dimensional phonons, albeit requiring parameters far exceeding known values in the literature.
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Submitted 18 June, 2011;
originally announced June 2011.
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Two-Stage Kondo Effect and Kondo Box Level Spectroscopy in a Carbon Nanotube
Authors:
Yu. Bomze,
I. Borzenets,
H. Mebrahtu,
A. Makarovski,
H. U. Baranger,
G. Finkelstein
Abstract:
The concept of the "Kondo box" describes a single spin, antiferromagnetically coupled to a quantum dot with a finite level spacing. Here, a Kondo box is formed in a carbon nanotube interacting with a localized electron. We investigate the spins of its first few eigenstates and compare them to a recent theory. In an 'open' Kondo-box, strongly coupled to the leads, we observe a non-monotonic tempera…
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The concept of the "Kondo box" describes a single spin, antiferromagnetically coupled to a quantum dot with a finite level spacing. Here, a Kondo box is formed in a carbon nanotube interacting with a localized electron. We investigate the spins of its first few eigenstates and compare them to a recent theory. In an 'open' Kondo-box, strongly coupled to the leads, we observe a non-monotonic temperature dependence of the nanotube conductance, which results from a competition between the Kondo-box singlet and the 'conventional' Kondo state that couples the nanotube to the leads.
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Submitted 7 October, 2010;
originally announced October 2010.
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Resonant Tunneling in a Dissipative Environment
Authors:
Yu. Bomze,
H. Mebrahtu,
I. Borzenets,
A. Makarovski,
G. Finkelstein
Abstract:
We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the tunneling rate. In the regime of sequential tunneling, the height of the single-electron conductance peaks increases as the temperature is lowered, although it sc…
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We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the tunneling rate. In the regime of sequential tunneling, the height of the single-electron conductance peaks increases as the temperature is lowered, although it scales more weekly than the conventional 1/T. In the resonant tunneling regime (temperature smaller than the level width), the peak width approaches saturation, while the peak height starts to decrease. Overall, the peak height shows a non-monotonic temperature dependence. We associate this unusual behavior with the transition from the sequential to the resonant tunneling through a single quantum level in a dissipative environment.
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Submitted 7 October, 2010;
originally announced October 2010.
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Single Phase Slip Limited Switching Current in 1-Dimensional Superconducting Al Nanowires
Authors:
Peng Li,
Phillip M. Wu,
Yuriy Bomze,
Ivan V. Borzenets,
Gleb Finkelstein,
A. M. Chang
Abstract:
An Aluminum nanowire switches from superconducting to normal as the current is increased in an upsweep. The switching current (I_s) averaged over upsweeps approximately follows the depairing critical current (I_c) but falls below it. Fluctuations in I_s exhibit three distinct regions of behaviors and are non-monotonic in temperature: saturation well below the critical temperature T_c, an increase…
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An Aluminum nanowire switches from superconducting to normal as the current is increased in an upsweep. The switching current (I_s) averaged over upsweeps approximately follows the depairing critical current (I_c) but falls below it. Fluctuations in I_s exhibit three distinct regions of behaviors and are non-monotonic in temperature: saturation well below the critical temperature T_c, an increase as T^{2/3} at intermediate temperatures, and a rapid decrease close to T_c. Heat dissipation analysis indicates that a single phase slip is able to trigger switching at low and intermediate temperatures, whereby the T^{2/3} dependence arises from the thermal activation of a phase slip, while saturation at low temperatures provides striking evidence that the phase slips by macroscopic quantum tunneling.
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Submitted 18 June, 2011; v1 submitted 2 June, 2010;
originally announced June 2010.
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Detection of non-Gaussian Fluctuations in a Quantum Point Contact
Authors:
G. Gershon,
Yu. Bomze,
E. V. Sukhorukov,
M. Reznikov
Abstract:
An experimental study of current fluctuations through a tunable transmission barrier, a quantum point contact, are reported. We measure the probability distribution function of transmitted charge with precision sufficient to extract the first three cumulants. To obtain the intrinsic quantities, corresponding to voltage-biased barrier, we employ a procedure that accounts for the response of the e…
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An experimental study of current fluctuations through a tunable transmission barrier, a quantum point contact, are reported. We measure the probability distribution function of transmitted charge with precision sufficient to extract the first three cumulants. To obtain the intrinsic quantities, corresponding to voltage-biased barrier, we employ a procedure that accounts for the response of the external circuit and the amplifier. The third cumulant, obtained with a high precision, is found to agree with the prediction for the statistics of transport in the non-Poissonian regime.
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Submitted 19 January, 2009; v1 submitted 9 October, 2007;
originally announced October 2007.
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Measurement of Counting Statistics of Electron Transport in a Tunnel Junction
Authors:
Yu. Bomze,
G. Gershon,
D. Shovkun,
L. S. Levitov,
M. Reznikov
Abstract:
We present measurements of the time-dependent fluctuations in electrical current in a voltage-biased tunnel junction. We were able to simultaneously extract the first three moments of the tunnel current counting statistics. Detailed comparison of the second and the third moment reveals that counting statistics is accurately described by the Poissonian distribution expected for spontaneous curren…
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We present measurements of the time-dependent fluctuations in electrical current in a voltage-biased tunnel junction. We were able to simultaneously extract the first three moments of the tunnel current counting statistics. Detailed comparison of the second and the third moment reveals that counting statistics is accurately described by the Poissonian distribution expected for spontaneous current fluctuations due to electron charge discreteness, realized in tunneling transport at negligible coupling to environment.
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Submitted 5 May, 2005; v1 submitted 15 April, 2005;
originally announced April 2005.
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Single-interface superconductivity in two-layer semiconductor heterostructures
Authors:
N. Ya. Fogel,
E. I. Buchstab,
Yu. V. Bomze,
O. I. Yuzephovich,
M. Yu. Mikhailov,
A. Yu. Sipatov,
E. A. Pashitskii,
R. I. Shekhter,
M. Jonson
Abstract:
We have discovered superconductivity in the two-layer semiconducting monochalcogenide heterostrutures PbTe/PbS, PbTe/PbSe and PbTe/YbS. By comparing data from two-layer samples with data from single monochalcogenide films we conclude that the superconductivity is connected with the interface between the two semiconductors. Evidence for the low dimensional nature of the superconducting interlayer…
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We have discovered superconductivity in the two-layer semiconducting monochalcogenide heterostrutures PbTe/PbS, PbTe/PbSe and PbTe/YbS. By comparing data from two-layer samples with data from single monochalcogenide films we conclude that the superconductivity is connected with the interface between the two semiconductors. Evidence for the low dimensional nature of the superconducting interlayer is presented and a model that explains the appearance of single-interface superconductivity is proposed.
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Submitted 14 November, 2005; v1 submitted 20 April, 2004;
originally announced April 2004.
