-
The electronic structure of Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$: experimental evidence of topological phase transition
Authors:
D. A. Estyunin,
T. P. Estyunina,
I. I. Klimovskikh,
K. A. Bokai,
V. A. Golyashov,
K. A. Kokh,
O. E. Tereshchenko,
S. Ideta,
Y. Miyai,
Y. Kumar,
T. Iwata,
T. Kosa,
T. Okuda,
K. Miyamoto,
K. Kuroda,
K. Shimada,
A. M. Shikin
Abstract:
This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substitution enables tunable magnetic and electronic properties. Using various angle-resolved photoemission spectroscopy (ARPES) techniques, including spin-resolved and ci…
▽ More
This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substitution enables tunable magnetic and electronic properties. Using various angle-resolved photoemission spectroscopy (ARPES) techniques, including spin-resolved and circular dichroism (CD) measurements, we analyzed the evolution of the electronic structure across different Pb concentrations, with a focus on topological phase transitions (TPT) near x = 50 %. Key indicators of TPT include the presence or absence of topological surface states (TSS) and bulk band gap closure. The results show a gradual decrease of the bulk band gap in the electronic structure of MPBT up to x = 40 %, where it nearly vanishes, followed by a constant gap value between 40 - 60 %, and its reopening above 80 %, which is accompanied by a transition of the electronic structure of MPBT to a PbBi$_2$Te$_4$-like electronic structure. TSS were observed at x less than 30 % and greater than 80 %, as confirmed by CD and spin-resolved ARPES data, but were absent near x = 55 %, suggesting a distinct topological phase - possibly semi-metallic or a trivial insulator with a narrow gap phase. These findings demonstrate the tunability of the electronic structure of MPBT, making it a promising candidate for topological and spintronic applications.
△ Less
Submitted 15 November, 2024;
originally announced November 2024.
-
Gate-controlled proximity effect in superconductor/ferromagnet van der Waals heterostructures
Authors:
G. A. Bobkov,
K. A. Bokai,
M. M. Otrokov,
A. M. Bobkov,
I. V. Bobkova
Abstract:
The discovery of 2D materials opens up unprecedented opportunities to design new materials with specified properties. In many cases, the design guiding principle is based on one or another proximity effect, i.e. the nanoscale-penetration of electronic correlations from one material to another. In a few layer van der Waals (vdW) heterostructures the proximity regions occupy the entire system. Here…
▽ More
The discovery of 2D materials opens up unprecedented opportunities to design new materials with specified properties. In many cases, the design guiding principle is based on one or another proximity effect, i.e. the nanoscale-penetration of electronic correlations from one material to another. In a few layer van der Waals (vdW) heterostructures the proximity regions occupy the entire system. Here we demonstrate that the physics of magnetic and superconducting proximity effects in 2D superconductor/ferromagnet vdW heterostructures is determined by the effects of interface hybridization of the electronic spectra of both materials. The degree of hybridization can be adjusted by gating, which makes it possible to achieve a high degree of controllability of the proximity effect. In particular, we show that this allows for electrical switching of superconductivity in such structures on and off, as well as for control of the amplitude and sign of the Zeeman splitting of superconducting spectra, opening interesting opportunities for spintronics and spin caloritronics.
△ Less
Submitted 20 October, 2024; v1 submitted 13 May, 2024;
originally announced May 2024.
-
Magnetism, heat capacity and electronic structure of EuCd$_2$P$_2$ in view of its colossal magnetoresistance
Authors:
Dmitry Yu. Usachov,
Sarah Krebber,
Kirill A. Bokai,
Artem V. Tarasov,
Marvin Kopp,
Charu Garg,
Alexander Virovets,
Jens Müller,
Max Mende,
Georg Poelchen,
Denis V. Vyalikh,
Cornelius Krellner,
Kristin Kliemt
Abstract:
The mechanism of the peculiar transport properties around the magnetic ordering temperature of semiconducting antiferromagnetic EuCd$_2$P$_2$ is not yet understood. With a huge peak in the resistivity observed above the Néel temperature, $T_{\rm N}=10.6\,\rm K$, it exhibits a colossal magnetoresistance effect. Recent reports on observations of ferromagnetic contributions above $T_{\rm N}$ as well…
▽ More
The mechanism of the peculiar transport properties around the magnetic ordering temperature of semiconducting antiferromagnetic EuCd$_2$P$_2$ is not yet understood. With a huge peak in the resistivity observed above the Néel temperature, $T_{\rm N}=10.6\,\rm K$, it exhibits a colossal magnetoresistance effect. Recent reports on observations of ferromagnetic contributions above $T_{\rm N}$ as well as metallic behavior below this temperature have motivated us to perform a comprehensive characterization of this material, including its resistivity, heat capacity, magnetic properties and electronic structure. Our transport measurements revealed quite different temperature dependence of resistivity with the maximum at $14\,\rm K$ instead of previously reported $18\,\rm K$. Low-field susceptibility data support the presence of static ferromagnetism above $T_{\rm N}$ and show a complex behavior of the material at small applied magnetic fields. Namely, signatures of reorientation of magnetic domains are observed up to $T=16\,\rm K$. Our magnetization measurements indicate a magnetocrystalline anisotropy which also leads to a preferred alignment of the magnetic clusters above $T_{\rm N}$. The momentum-resolved photoemission experiments at temperatures from $24\,\rm K$ down to $2.5\,\rm K$ indicate the permanent presence of a fundamental band gap without change of the electronic structure when going through $T_N$ that is in contradiction with previous results. We performed \textit{ab initio} band structure calculations which are in good agreement with the measured photoemission data when assuming an antiferromagnetic ground state. Calculations for the ferromagnetic phase show a much smaller bandgap, indicating the importance of possible ferromagnetic contributions for the explanation of the colossal magnetoresistance effect in the related EuZn$_2$P$_2$.
△ Less
Submitted 29 February, 2024;
originally announced February 2024.
-
Magnetic Dirac semimetal state of (Mn,Ge)Bi$_2$Te$_4$
Authors:
Alexander S. Frolov,
Dmitry Yu. Usachov,
Artem V. Tarasov,
Alexander V. Fedorov,
Kirill A. Bokai,
Ilya Klimovskikh,
Vasily S. Stolyarov,
Anton I. Sergeev,
Alexander N. Lavrov,
Vladimir A. Golyashov,
Oleg E. Tereshchenko,
Giovanni Di Santo,
Luca Petaccia,
Oliver J. Clark,
Jaime Sanchez-Barriga,
Lada V. Yashina
Abstract:
For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dep…
▽ More
For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs.
△ Less
Submitted 22 June, 2023;
originally announced June 2023.
