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Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics
Authors:
C. Weiss,
S. Park,
J. Lefèvre,
B. Boizot,
C. Mohr,
O. Cavani,
S. Picard,
R. Kurstjens,
T. Niewelt,
S. Janz
Abstract:
We report on the effect of electron and proton irradiation on effective minority carrier lifetimes ($τ_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay ($μ$W-PCD) method. We examine the dependence of $τ_{eff}$ on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured $τ_{eff}$ before and a…
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We report on the effect of electron and proton irradiation on effective minority carrier lifetimes ($τ_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay ($μ$W-PCD) method. We examine the dependence of $τ_{eff}$ on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured $τ_{eff}$ before and after irradiation are used to estimate the minority carriers diffusion lengths, which is an important parameter for solar cell operation. We observe $τ_{eff}$ ranging from 50 to 230 $μ$s for Ge doping levels between 1E17 and 1E16 at.cm$^{-3}$, corresponding to diffusion lengths of 500-1400 $μ$m. A separation of $τ_{eff}$ in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.
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Submitted 15 May, 2020;
originally announced May 2020.
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Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells
Authors:
R. Lang,
J. Schön,
J. Lefèvre,
B. Boizot,
F. Dimroth,
D. Lackner
Abstract:
Recent developments have renewed the demand for solar cells with increased tolerance to radiation damage. To investigate the specific irradiation damage of 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying In and P contents, a simulation based analysis is employed: by fitting the quantum efficiency and open-circuit voltage simultaneously before and after irradiation, the ind…
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Recent developments have renewed the demand for solar cells with increased tolerance to radiation damage. To investigate the specific irradiation damage of 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying In and P contents, a simulation based analysis is employed: by fitting the quantum efficiency and open-circuit voltage simultaneously before and after irradiation, the induced changes in lifetime are detected. Furthermore, the reduction of irradiation damage during regeneration under typical satellite operating conditions for GEO missions (60°C and AM0 illumination) is investigated. A clear decrease of the radiation damage is observed after post irradiation regeneration. This regeneration effect is stronger for increasing InP-fraction. It is demonstrated that the irradiation induced defect recombination coefficient for irradiation with 1 MeV electrons after regeneration for 216 hours can be described with a linear function of InP-fraction between 1*10$^{-5}$ cm$^2$/s for GaAs and 7*10$^{-7}$ cm$^2$/s for InP. The results show that GaInAsP is a promising material for radiation hard space solar cells.
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Submitted 8 April, 2020; v1 submitted 1 April, 2020;
originally announced April 2020.
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Effect of Sm-, Gd- codoping on structural modifications in aluminoborosilicate glasses under beta-irradiation
Authors:
Evguenia Malchukova,
Bruno Boizot,
Guillaume Petite,
Dominique Ghaleb
Abstract:
Two series of Sm-, Gd-codoped aluminoborosilicate glasses with different total rare earth content have been studied in order to examine the codoping effect on the structural modifications of beta-irradiated glasses. The data obtained by Electron Paramagnetic Resonance spectroscopy indicated that relative amount of Gd3+ ions located in network former position reveals non-linear dependence on Sm/G…
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Two series of Sm-, Gd-codoped aluminoborosilicate glasses with different total rare earth content have been studied in order to examine the codoping effect on the structural modifications of beta-irradiated glasses. The data obtained by Electron Paramagnetic Resonance spectroscopy indicated that relative amount of Gd3+ ions located in network former position reveals non-linear dependence on Sm/Gd ratio. Besides, codoping leads to the evolution of the EPR signal attributed to defects created by irradiation: superhyperfine structure of boron oxygen hole centres EPR line becomes less noticeable and resolved with increase of Gd amount. This fact manifests that Gd3+ ions are mainly diluted in vicinity of the boron network. By Raman spectroscopy, we showed that the structural changes induced by the irradiation also reveal non-linear behaviour with Sm/Gd ratio. In fact, the shift of the Si-O-Si bending vibration modes has a clear minimum for the samples containing equal amount of Sm and Gd (50:50) in both series of the investigated glasses. In contrast, for single doped glass there is no influence of dopant's content on Si-O-Si shift (in case of Gd) or its diminution (in case of Sm) occurs which is explained by the reduction process influence. At the same time, no noticeable effect of codoping on Sm3+ intensity as well as on Sm2+ emission or on Sm reduction process was observed.
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Submitted 30 October, 2008;
originally announced October 2008.
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Spectroscopic parameters related to non bridging oxygen hole centers in amorphous-SiO2
Authors:
L. Vaccaro,
M. Cannas,
B. Boizot
Abstract:
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with the model in which they are assigned to a single defect. This finding allows t…
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The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with the model in which they are assigned to a single defect. This finding allows to determine spectroscopic parameters related to optical transitions efficiency: the oscillator strength of the 4.8 eV results ~200 times higher than that of the 2.0 eV; the 1.9 eV luminescence quantum yield under 4.8 eV excitation is lower (by a factor ~3) than that under 2.0 eV excitation. These results are consistent with the energetic level scheme, proposed in literature for non bridging oxygen hole center, and account for the excitation/luminescence pathways occurring after UV and visible absorption
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Submitted 30 March, 2005;
originally announced March 2005.
