Graphene as a p-type metal for ultimate miniaturization
Authors:
Francesca Iacopi,
Tim Gould,
John J. Boeckl,
Neeraj Mishra,
Dayle Goding,
Aiswarya Pradeepkumar,
Benjamin V. Cunning,
Barry Wood,
Ryan E. Brock,
Reinhold H. Dauskardt,
Sima Dimitrijev
Abstract:
We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 Ω per square over macroscopic scales, and obtained in-situ over a thin cushion of molecular oxygen on a silicon substrate. The electric and electronic properties of this specific configuration remain stable upon thermal…
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We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 Ω per square over macroscopic scales, and obtained in-situ over a thin cushion of molecular oxygen on a silicon substrate. The electric and electronic properties of this specific configuration remain stable upon thermal anneals and months of exposure to air. We further report a complementary ab-initio study, predicting an enhancement of graphene adhesion energy of up to a factor 20, also supported by experimental fracture tests. Our results show that the remarkable properties of graphene can be realized in a reliable fashion using a high-throughput process. In addition to providing exceptional material properties, the growth process we employed is scalable to large areas so that the outstanding conduction properties of graphene can be harnessed in devices fabricated via conventional semiconductor manufacturing processes. We anticipate that the approach will provide the necessary scalability and reliability for future developments in the graphene nanoscience and technology fields, especially in areas where further miniaturization is hampered by size effects and electrical reliability of classical conductors.
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Submitted 7 July, 2016; v1 submitted 20 March, 2015;
originally announced March 2015.
Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity
Authors:
Shriram Shivaraman,
M. V. S. Chandrashekhar,
John J. Boeckl,
Michael G. Spencer
Abstract:
A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder using the spectra. The attenuation of the substrate Raman signal due to the graphene overlayer is found to be dependent on the graphene film thickness deduce…
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A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder using the spectra. The attenuation of the substrate Raman signal due to the graphene overlayer is found to be dependent on the graphene film thickness deduced from X-ray photoelectron spectroscopy and transmission electron microscopy of the surfaces. We explain this dependence using an absorbing overlayer model. This method can be used for mapping graphene thickness over a region and is capable of estimating thickness of multilayer graphene films beyond that possible by XPS and Auger electron spectroscopy (AES).
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Submitted 31 March, 2009; v1 submitted 21 July, 2008;
originally announced July 2008.
