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Engineering correlated Dirac fermions and flat bands on SiC with transition-metal adatom lattices
Authors:
Henri Menke,
Niklas Enderlein,
Yi-Ting Tseng,
Michel Bockstedte,
Janina Maultzsch,
Giorgio Sangiovanni,
Philipp Hansmann
Abstract:
We propose three transition-metal adatom systems on 3C-SiC(111) surfaces as a versatile platform to realize massless Dirac fermions and flat bands with strong electronic correlations. Using density functional theory combined with the constrained random phase approximation and dynamical mean-field theory, we investigate the electronic properties of Ti, V, and Cr adatoms. The triangular surface latt…
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We propose three transition-metal adatom systems on 3C-SiC(111) surfaces as a versatile platform to realize massless Dirac fermions and flat bands with strong electronic correlations. Using density functional theory combined with the constrained random phase approximation and dynamical mean-field theory, we investigate the electronic properties of Ti, V, and Cr adatoms. The triangular surface lattices exhibit narrow bandwidths and effective two-band Hubbard models near the Fermi level, originating from partially filled, localized d-orbitals of the adatoms. Our study reveals a materials trend from a flat band Fermi liquid (Cr) via a paramagnetic Mott insulator with large local moments (V) to a Mott insulator on the verge to a heavy Dirac semimetal (Ti) showcasing the diverse nature of these strongly correlated systems. Specifically, the flat bands in the Cr and the well-defined Dirac cones in the strained metallic~Ti lattice indicate high potential for realizing topological and correlated phases.
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Submitted 22 October, 2024;
originally announced October 2024.
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Spin-phonon interaction and short range order in $\mathrm{Mn_3Si_{2}Te_6}$
Authors:
Sanja Djurdjić Mijin,
Andrijana Šolajić,
Jelena Pešić,
Yu Liu,
Cedomir Petrovic,
Michel Bockstedte,
Alberta Bonanni,
Zoran V. Popović,
Nenad Lazarević
Abstract:
The vibrational properties of ferrimagnetic $\mathrm{Mn_3Si_{2}Te_6}$ single crystals are investigated using Raman spectroscopy and density functional theory calculations. Eighteen Raman-active modes are identified, fourteen of which are assigned according to with the trigonal symmetry. Four additional peaks, obeying the $A_{1g}$ selection rules, are attributed to the overtones. The unconventional…
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The vibrational properties of ferrimagnetic $\mathrm{Mn_3Si_{2}Te_6}$ single crystals are investigated using Raman spectroscopy and density functional theory calculations. Eighteen Raman-active modes are identified, fourteen of which are assigned according to with the trigonal symmetry. Four additional peaks, obeying the $A_{1g}$ selection rules, are attributed to the overtones. The unconventional temperature evolution of the $A_{1g}^5$ mode self-energy suggests a competition between different short-range magnetic correlations that significantly impact the spin-phonon interaction in $\mathrm{Mn_3Si_{2}Te_6}$. The research provides a comprehensive insight to the lattice properties, studies their temperature dependence and shows the arguments for existence of competing short-range magnetic phases in $\mathrm{Mn_3Si_{2}Te_6}$.
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Submitted 6 September, 2022;
originally announced September 2022.
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Impact of electron solvation on ice structures at the molecular scale
Authors:
Cord Bertram,
Philipp Auburger,
Michel Bockstedte,
Julia Stähler,
Uwe Bovensiepen,
Karina Morgenstern
Abstract:
We determine the impact of electron solvation on D$_2$O structures adsorbed on Cu(111) with low temperature scanning tunneling microscopy, two-photon photoemission, and ab initio theory. UV photons generating solvated electrons lead not only to transient, but also to permanent structural changes through the rearrangement of individual molecules. The persistent changes occur near sites with a high…
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We determine the impact of electron solvation on D$_2$O structures adsorbed on Cu(111) with low temperature scanning tunneling microscopy, two-photon photoemission, and ab initio theory. UV photons generating solvated electrons lead not only to transient, but also to permanent structural changes through the rearrangement of individual molecules. The persistent changes occur near sites with a high density of dangling OH groups that facilitate electron solvation. We conclude that energy dissipation during solvation triggers permanent molecular rearrangement via vibrational excitation.
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Submitted 10 September, 2019; v1 submitted 9 September, 2019;
originally announced September 2019.
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Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
Authors:
Matthias Widmann,
Matthias Niethammer,
Dmitry Yu. Fedyanin,
Igor A. Khramtsov,
Torsten Rendler,
Ian D. Booker,
Jawad Ul Hassan,
Naoya Morioka,
Yu-Chen Chen,
Ivan G. Ivanov,
Nguyen Tien Son,
Takeshi Ohshima,
Michel Bockstedte,
Adam Gali,
Cristian Bonato,
Sang-Yun Lee,
Jörg Wrachtrup
Abstract:
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of indi…
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Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the colour centre in an integrated silicon carbide opto-electronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active colour centres for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.
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Submitted 23 June, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
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Vibrationally dependent electron-electron interactions in resonant electron transport through single-molecule junctions
Authors:
Andre Erpenbeck,
Rainer Härtle,
Michel Bockstedte,
Michael Thoss
Abstract:
We investigate the role of electronic-vibrational coupling in resonant electron transport through single-molecule junctions, taking into account that the corresponding coupling strengths may depend on the charge and excitation state of the molecular bridge. In the presence of multiple electronic states, this requires to extend the commonly used model and include vibrationally dependent electron-el…
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We investigate the role of electronic-vibrational coupling in resonant electron transport through single-molecule junctions, taking into account that the corresponding coupling strengths may depend on the charge and excitation state of the molecular bridge. In the presence of multiple electronic states, this requires to extend the commonly used model and include vibrationally dependent electron-electron interaction. We use Born-Markov master equation methods and consider selected models to exemplify the effect of the additional interaction on the transport characteristics of a single-molecule junction. In particular, we show that it has a significant influence on local cooling and heating mechanisms, may result in negative differential resistance, and cause pronounced asymmetries in the conductance map of a single-molecule junction.
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Submitted 10 August, 2015;
originally announced August 2015.
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Coupling of excitons and defect states in boron-nitride nanostructures
Authors:
C. Attaccalite,
M. Bockstedte,
A. Marini,
A. Rubio,
L. Wirtz
Abstract:
The signature of defects in the optical spectra of hexagonal boron nitride (BN) is investigated using many body perturbation theory. A single BN-sheet serves as a model for different layered BN- nanostructures and crystals. In the sheet we embed prototypical defects such as a substitutional impurity, isolated Boron and Nitrogen vacancies, and the di-vacancy. Transitions between the deep defect lev…
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The signature of defects in the optical spectra of hexagonal boron nitride (BN) is investigated using many body perturbation theory. A single BN-sheet serves as a model for different layered BN- nanostructures and crystals. In the sheet we embed prototypical defects such as a substitutional impurity, isolated Boron and Nitrogen vacancies, and the di-vacancy. Transitions between the deep defect levels and extended states produce characteristic excitation bands that should be responsible for the emission band around 4 eV, observed in luminescence experiments. In addition, defect bound excitons occur that are consistently treated in our ab initio approach along with the "free" exciton. For defects in strong concentration, the co-existence of both bound and free excitons adds sub-structure to the main exciton peak and provides an explanation for the corresponding feature in cathodo and photo-luminescence spectra.
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Submitted 14 March, 2011;
originally announced March 2011.
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Electron spectrum of epitaxial graphene monolayers
Authors:
Oleg Pankratov,
Stephan Hensel,
Michel Bockstedte
Abstract:
Epitaxial graphene on SiC possesses, quite remarkably, an electron spectrum similar to that of freestanding samples. Yet, the coupling to the substrate, albeit small, affects the quasiparticle properties. Combining \emph{ab initio} calculations with symmetry analysis, we derive a modified Dirac-Weyl Hamiltonian for graphene epilayers. While for the epilayer on the C-face the Dirac cone remains alm…
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Epitaxial graphene on SiC possesses, quite remarkably, an electron spectrum similar to that of freestanding samples. Yet, the coupling to the substrate, albeit small, affects the quasiparticle properties. Combining \emph{ab initio} calculations with symmetry analysis, we derive a modified Dirac-Weyl Hamiltonian for graphene epilayers. While for the epilayer on the C-face the Dirac cone remains almost intact, for epilayers on the Si-face the band splitting is about 30\,meV. At certain energies, the Dirac bands are significantly distorted by the resonant interaction with interface states, which should lead to mobility suppression, especially on the Si-face.
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Submitted 11 September, 2010;
originally announced September 2010.
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Many body effects in the excitation spectrum of a defect in SiC
Authors:
Michel Bockstedte,
Andrea Marini,
Oleg Pankratov,
Angel Rubio
Abstract:
We show that electron correlations control the photophysics of defects in SiC through both renormalization of the quasiparticle bandstructure and exciton effects. We consider the carbon vacancy, which is a well-identified defect with two possible excitation channels that involve conduction and valence band states. Corrections to the Kohn-Sham ionization levels are found to strongly depend on the…
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We show that electron correlations control the photophysics of defects in SiC through both renormalization of the quasiparticle bandstructure and exciton effects. We consider the carbon vacancy, which is a well-identified defect with two possible excitation channels that involve conduction and valence band states. Corrections to the Kohn-Sham ionization levels are found to strongly depend on the occupation of the defect state. Excitonic effects introduce a red shift of 0.23 eV. The analysis unambigiously re-assigns excitation mechanism at the thresholds in photo-induced paramagnetic resonance measurements [J. Dashdorj \emph{et al.}, J. Appl. Phys. \textbf{104}, 113707 (2008)].
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Submitted 20 March, 2010;
originally announced March 2010.
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Thermally stable carbon-related centers in 6H-SiC: photoluminescence spectra and microscopic models
Authors:
Alexander Mattausch,
Michel Bockstedte,
Oleg Pankratov,
John W. Steeds,
Suzanne Furkert,
Jonathan M. Hayes,
Wayne Sullivan,
Nick G. Wright
Abstract:
Recent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C_3)_Si and the U photoluminescence center in 6H-SiC [Evans et al., Phys. Rev. B 66, 35204 (2002)]. Yet, some of the predicted vibrational modes were not observed experimentally. Here we report experiments which indeed confirm the…
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Recent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C_3)_Si and the U photoluminescence center in 6H-SiC [Evans et al., Phys. Rev. B 66, 35204 (2002)]. Yet, some of the predicted vibrational modes were not observed experimentally. Here we report experiments which indeed confirm the existence of a low-energy mode for the U-center (as well as for the HT3- and HT4-centers with spectral details similar to the U-center). We calculated the isotope splitting for the (C_3)_Si-defect and found near-perfect agreement with our data. In addition, we discuss the carbon di-interstitial (C_2)_Hex as a model for the Z- and HT5-centers. The isotope splitting is also well reproduced, but the absolute values of the local mode energies show a discrepancy of about 10 meV.
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Submitted 23 March, 2006;
originally announced March 2006.
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Structure and vibrational spectra of carbon clusters in SiC
Authors:
Alexander Mattausch,
Michel Bockstedte,
Oleg Pankratov
Abstract:
The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess sizable dissociation energies and may be formed via condensation of carbon interstitials, e.g. generated in the course of ion implantation. All considered defect complexes possess localized vibrational modes (LVM's) w…
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The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess sizable dissociation energies and may be formed via condensation of carbon interstitials, e.g. generated in the course of ion implantation. All considered defect complexes possess localized vibrational modes (LVM's) well above the SiC bulk phonon spectrum. In particular, the compact antisite clusters exhibit high-frequency LVM's up to 250meV. The isotope shifts resulting from a_{13}C enrichment are analyzed. In the light of these results, the photoluminescence centers D_{II} and P-U are discussed. The dicarbon antisite is identified as a plausible key ingredient of the D_{II}-center, whereas the carbon split-interstitial is a likely origin of the P-T centers. The comparison of the calculated and observed high-frequency modes suggests that the U-center is also a carbon-antisite based defect.
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Submitted 13 September, 2004;
originally announced September 2004.
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Ab initio study of the migration of intrinsic defects in 3C-SiC
Authors:
Michel Bockstedte,
Alexander Mattausch,
Oleg Pankratov
Abstract:
The diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. The carbon split-interstitials and the two relevant silicon interstitials, namely the tetrahedrally carbon-coordinated interstitial and the <110>-oriented split-interstitial, are found to be by far more mobile than the v…
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The diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. The carbon split-interstitials and the two relevant silicon interstitials, namely the tetrahedrally carbon-coordinated interstitial and the <110>-oriented split-interstitial, are found to be by far more mobile than the vacancies. The metastability of the silicon vacancy, which transforms into a vacancy-antisite complex in p-type and compensated material, kinetically suppresses its contribution to diffusion processes. The role of interstitials and vacancies in the self-diffusion is analyzed. Consequences for the dopant diffusion are qualitatively discussed. Our analysis emphasizes the relevance of mechanisms based on silicon and carbon interstitials.
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Submitted 30 September, 2003;
originally announced September 2003.
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Annealing mechanisms of intrinsic defects in 3C-SiC: a theoretical study
Authors:
Michel Bockstedte,
Alexander Mattausch,
Oleg Pankratov
Abstract:
The annealing kinetics of mobile intrinsic defects is investigated by an ab initio method based on density functional theory. The interstitial-vacancy recombination, the diffusion of vacancies and interstitials to defect sinks (e.g. surfaces or dislocations) as well as the formation of interstitial-clusters are considered. The calculated migration and reaction barriers suggest a hierarchical ord…
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The annealing kinetics of mobile intrinsic defects is investigated by an ab initio method based on density functional theory. The interstitial-vacancy recombination, the diffusion of vacancies and interstitials to defect sinks (e.g. surfaces or dislocations) as well as the formation of interstitial-clusters are considered. The calculated migration and reaction barriers suggest a hierarchical ordering of competing annealing mechanisms. The higher mobility of carbon and silicon interstitials as compared to the vacancies drives the annealing mechanims at lower temperatures including the vacancy-interstitial recombination and the formation of interstitial carbon clusters. These clusters act as a source for carbon interstials at elevated temperatures. In p-type material we discuss the transformation of the silicon vacancy into the more stable vacancy-antisite complex as an annealing mechanism, which is activated before the vacancy migration. Recent annealing studies of vacancy-related centers in irradiated 3C- and 4H-SiC and semi-insulating 4H-SiC are interpreted in terms of the proposed hierarchy of annealing mechanisms.
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Submitted 30 September, 2003;
originally announced September 2003.
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Carbon antisite clusters in SiC: a possible pathway to the D_{II} center
Authors:
Alexander Mattausch,
Michel Bockstedte,
Oleg Pankratov
Abstract:
The photoluminescence center D_{II} is a persistent intrinsic defect which is common in all SiC polytypes. Its fingerprints are the characteristic phonon replicas in luminescence spectra. We perform ab-initio calculations of vibrational spectra for various defect complexes and find that carbon antisite clusters exhibit vibrational modes in the frequency range of the D_{II} spectrum. The clusters…
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The photoluminescence center D_{II} is a persistent intrinsic defect which is common in all SiC polytypes. Its fingerprints are the characteristic phonon replicas in luminescence spectra. We perform ab-initio calculations of vibrational spectra for various defect complexes and find that carbon antisite clusters exhibit vibrational modes in the frequency range of the D_{II} spectrum. The clusters possess very high binding energies which guarantee their thermal stability--a known feature of the D_{II} center. The di-carbon antisite (C_{2})_{Si} (two carbon atoms sharing a silicon site) is an important building block of these clusters.
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Submitted 4 February, 2004; v1 submitted 4 September, 2003;
originally announced September 2003.
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Pseudopotential study of binding properties of solids within generalized gradient approximations: The role of core-valence exchange-correlation
Authors:
Martin Fuchs,
Michel Bockstedte,
Eckhard Pehlke,
Matthias Scheffler
Abstract:
In ab initio pseudopotential calculations within density-functional theory the nonlinear exchange-correlation interaction between valence and core electrons is often treated linearly through the pseudopotential. We discuss the accuracy and limitations of this approximation regarding a comparison of the local density approximation (LDA) and generalized gradient approximations (GGA), which we find…
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In ab initio pseudopotential calculations within density-functional theory the nonlinear exchange-correlation interaction between valence and core electrons is often treated linearly through the pseudopotential. We discuss the accuracy and limitations of this approximation regarding a comparison of the local density approximation (LDA) and generalized gradient approximations (GGA), which we find to describe core-valence exchange-correlation markedly different. (1) Evaluating the binding properties of a number of typical solids we demonstrate that the pseudopotential approach and namely the linearization of core-valence exchange-correlation are both accurate and limited in the same way in GGA as in LDA. (2) Examining the practice to carry out GGA calculations using pseudopotentials derived within LDA we show that the ensuing results differ significantly from those obtained using pseudopotentials derived within GGA. As principal source of these differences we identify the distinct behavior of core-valence exchange-correlation in LDA and GGA which, accordingly, contributes substantially to the GGA induced changes of calculated binding properties.
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Submitted 23 July, 1997;
originally announced July 1997.
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Density-functional theory calculations for poly-atomic systems: Electronic structure, static and elastic properties and ab initio molecular dynamics
Authors:
Michel Bockstedte,
Alexander Kley,
Joerg Neugebauer,
Matthias Scheffler
Abstract:
The package "fhi96md" is an efficient code to perform density-functional theory total-energy calculations for materials ranging from insulators to transition metals. The package employs first-principles pseudopotentials, and a plane-wave basis-set. For exchange and correlation both the local density and generalized gradient approximations are implemented. The code has a low storage demand and pe…
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The package "fhi96md" is an efficient code to perform density-functional theory total-energy calculations for materials ranging from insulators to transition metals. The package employs first-principles pseudopotentials, and a plane-wave basis-set. For exchange and correlation both the local density and generalized gradient approximations are implemented. The code has a low storage demand and performs efficiently on low budget personal computers as well as high performance computers.
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Submitted 26 May, 1997;
originally announced May 1997.
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Theory of self-diffusion in GaAs
Authors:
Michel Bockstedte,
Matthias Scheffler
Abstract:
Ab initio molecular dynamics simulations are employed to investigate the dominant migration mechanism of the gallium vacancy in gaas as well as to assess its free energy of formation and the rate constant of gallium self-diffusion. our analysis suggests that the vacancy migrates by second nearest neighbour hops. the calculated self-diffusion constant is in good agreement with the experimental va…
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Ab initio molecular dynamics simulations are employed to investigate the dominant migration mechanism of the gallium vacancy in gaas as well as to assess its free energy of formation and the rate constant of gallium self-diffusion. our analysis suggests that the vacancy migrates by second nearest neighbour hops. the calculated self-diffusion constant is in good agreement with the experimental value obtained in ^69 GaAs/ ^71 GaAs isotope heterostructures and at significant variance with that obtained earlier from interdiffusion experiments in GaAlAs/GaAs-heterostructures.
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Submitted 2 December, 1996;
originally announced December 1996.
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Ab initio molecular dynamics study of the desorption of D_2 from Si(100)
Authors:
Axel Gross,
Michel Bockstedte,
Matthias Scheffler
Abstract:
Ab initio molecular dynamics calculations of deuterium desorbing from Si(100) have been performed in order to monitor the energy redistribution among the various D$_2$ and silicon degrees of freedom during the desorption process. The calculations show that a considerable part of the potential energy at the transition state to desorption is transferred to the silicon lattice. The deuterium molecu…
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Ab initio molecular dynamics calculations of deuterium desorbing from Si(100) have been performed in order to monitor the energy redistribution among the various D$_2$ and silicon degrees of freedom during the desorption process. The calculations show that a considerable part of the potential energy at the transition state to desorption is transferred to the silicon lattice. The deuterium molecules leave the surface vibrationally hot and rotationally cold, in agreement with thermal desorption experiments; the mean kinetic energy, however, is larger than found in a laser-induced desorption experiment. We discuss possible reasons for this discrepancy.
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Submitted 5 March, 1997; v1 submitted 25 September, 1996;
originally announced September 1996.
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Ab initio Molecular Dynamics Study of D_2 Desorption from Si(100)
Authors:
Axel Gross,
Michel Bockstedte,
Matthias Scheffler
Abstract:
Ab initio molecular dynamics calculations of deuterium desorbing from Si(100) have been performed in order to monitor the energy redistribution among the hydrogen and silicon degrees of freedom during the desorption process. The calculations show that part of the potential energy at the transition state to desorption is transferred to the silicon lattice. The deuterium molecules leave the surfac…
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Ab initio molecular dynamics calculations of deuterium desorbing from Si(100) have been performed in order to monitor the energy redistribution among the hydrogen and silicon degrees of freedom during the desorption process. The calculations show that part of the potential energy at the transition state to desorption is transferred to the silicon lattice. The deuterium molecules leave the surface vibrationally hot and rotationally cold, in agreement with experiments; the mean kinetic energy, however, is larger than found in experiments.
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Submitted 19 July, 1996;
originally announced July 1996.
