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Edge effects in radial porosity profiles from CT measurements and melt pool signal intensities for laser powder bed fusion
Authors:
Jorrit Voigt,
Thomas Bock,
Uwe Hilpert,
Ralf Hellmann,
Michael Moeckel
Abstract:
Limited process control can cause metallurgical defect formation and inhomogeneous relative density in laser powder bed fusion manufactured parts. In this study, cylindrical 15-5 PH stainless steel specimens are investigated by computer tomography; it shows an edge enhanced relative density profile. Additionally, the on axis monitoring signal, obtained from recording the thermal radiation of the m…
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Limited process control can cause metallurgical defect formation and inhomogeneous relative density in laser powder bed fusion manufactured parts. In this study, cylindrical 15-5 PH stainless steel specimens are investigated by computer tomography; it shows an edge enhanced relative density profile. Additionally, the on axis monitoring signal, obtained from recording the thermal radiation of the melt pool, is considered. Analyzing data for the full duration of the building process results in a statistically increased melt pool signature close to the edge corresponding to the density profile. Edge specific patterns in the on axis signal are found by unsupervised times series clustering. The observations are interpreted using finite element method modeling: For exemplary points at the center and edge it shows different local thermal histories attributed to the chosen laser scan pattern. The results motivate a route towards future design of components with locally dependent material parameters.
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Submitted 27 January, 2022;
originally announced January 2022.
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GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission
Authors:
S. Dadgostar,
J. Schmidtbauer,
T. Boeck,
A. Torres,
O. Martínez,
J. Jiménez,
J. W. Tomm,
A. Mogilatenko,
W. T. Masselink,
F. Hatami
Abstract:
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode after deposition of more than 1.2 monolayers of GaAs. The quantum dots have an areal density between 6 and 7.6x1010 per cm-2 and multimodal size distribution. The l…
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We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode after deposition of more than 1.2 monolayers of GaAs. The quantum dots have an areal density between 6 and 7.6x1010 per cm-2 and multimodal size distribution. The luminescence spectra show two peaks in the range of 1.7 and 2.1 eV. The samples with larger quantum dots have red emission and show less thermal quenching compared to the samples with smaller QDs. The large QDs luminescence up to room temperature. We attribute the high energy emission to indirect carrier recombination in the thin quantum wells or small strained quantum dots, whereas the low energy red emission is due to the direct electron-hole recombination in the relaxed quantum dots.
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Submitted 8 December, 2015;
originally announced December 2015.
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Pattern formation in directional solidification under shear flow. I: Linear stability analysis and basic patterns
Authors:
Yannick Marietti,
Jean-Marc Debierre,
Thomas-Michael Bock,
Klaus Kassner
Abstract:
An asymptotic interface equation for directional solidification near the absolute stabiliy limit is extended by a nonlocal term describing a shear flow parallel to the interface. In the long-wave limit considered, the flow acts destabilizing on a planar interface. Moreover, linear stability analysis suggests that the morphology diagram is modified by the flow near the onset of the Mullins-Sekerk…
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An asymptotic interface equation for directional solidification near the absolute stabiliy limit is extended by a nonlocal term describing a shear flow parallel to the interface. In the long-wave limit considered, the flow acts destabilizing on a planar interface. Moreover, linear stability analysis suggests that the morphology diagram is modified by the flow near the onset of the Mullins-Sekerka instability. Via numerical analysis, the bifurcation structure of the system is shown to change. Besides the known hexagonal cells, structures consisting of stripes arise. Due to its symmetry-breaking properties, the flow term induces a lateral drift of the whole pattern, once the instability has become active. The drift velocity is measured numerically and described analytically in the framework of a linear analysis. At large flow strength, the linear description breaks down, which is accompanied by a transition to flow-dominated morphologies, described in a companion paper. Small and intermediate flows lead to increased order in the lattice structure of the pattern, facilitating the elimination of defects. Locally oscillating structures appear closer to the instability threshold with flow than without.
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Submitted 7 June, 2001;
originally announced June 2001.
