-
Hyperbolic Metamaterials via Hierarchical Block Copolymer Nanostructures
Authors:
I. Murataj,
M. Channab,
E. Cara,
C. F. Pirri,
L. Boarino,
A. Angelini,
F. Ferrarese Lupi
Abstract:
Hyperbolic metamaterials (HMMs) offer unconventional properties in the field of optics, enabling opportunities for confinement and propagation of light at the nanoscale. In-plane orientation of the optical axis, in the direction coinciding with the anisotropy of the HMMs, is desirable for a variety of novel applications in nanophotonics and imaging. Here, a method for creating localized HMMs with…
▽ More
Hyperbolic metamaterials (HMMs) offer unconventional properties in the field of optics, enabling opportunities for confinement and propagation of light at the nanoscale. In-plane orientation of the optical axis, in the direction coinciding with the anisotropy of the HMMs, is desirable for a variety of novel applications in nanophotonics and imaging. Here, a method for creating localized HMMs with in-plane optical axis, based on block copolymer (BCP) blend instability, is introduced. The dewetting of BCP thin film over topographically defined substrates generates droplets composed of highly ordered lamellar nanostructures in hierarchical configuration. The hierarchical nanostructures represent a valuable platform for the subsequent pattern transfer into a Au/air HMM, exhibiting hyperbolic behavior in a broad wavelength range in the visible spectrum. A computed Purcell factor as high as 32 at 580 nm supports the strong reduction in the fluorescence lifetime of defects in nanodiamonds placed on top of the HMM.
△ Less
Submitted 2 March, 2021;
originally announced March 2021.
-
Self-organizing memristive nanowire networks with structural plasticity emulate biological neuronal circuits
Authors:
Gianluca Milano,
Giacomo Pedretti,
Matteo Fretto,
Luca Boarino,
Fabio Benfenati,
Daniele Ielmini,
Ilia Valov,
Carlo Ricciardi
Abstract:
Acting as artificial synapses, two-terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Organized into large arrays with a top-down approach, memristive devices in conventional crossbar architecture demonstrated the implementation of brain-inspired computing for supervised and unsupervised learning. Alternative way using unconven…
▽ More
Acting as artificial synapses, two-terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Organized into large arrays with a top-down approach, memristive devices in conventional crossbar architecture demonstrated the implementation of brain-inspired computing for supervised and unsupervised learning. Alternative way using unconventional systems consisting of many interacting nano-parts have been proposed for the realization of biologically plausible architectures where the emergent behavior arises from a complexity similar to that of biological neural circuits. However, these systems were unable to demonstrate bio-realistic implementation of synaptic functionalities with spatio-temporal processing of input signals similarly to our brain. Here we report on emergent synaptic behavior of biologically inspired nanoarchitecture based on self-assembled and highly interconnected nanowire (NW) networks realized with a bottom up approach. The operation principle of this system is based on the mutual electrochemical interaction among memristive NWs and NW junctions composing the network and regulating its connectivity depending on the input stimuli. The functional connectivity of the system was shown to be responsible for heterosynaptic plasticity that was experimentally demonstrated and modelled in a multiterminal configuration, where the formation of a synaptic pathway between two neuron terminals is responsible for a variation in synaptic strength also at non-stimulated terminals. These results highlight the ability of nanowire memristive architectures for building brain-inspired intelligent systems based on complex networks able to physically compute the information arising from multi-terminal inputs.
△ Less
Submitted 5 September, 2019;
originally announced September 2019.
-
Single-photon emitters based on NIR colour centres in diamond coupled with solid immersion lenses
Authors:
D. Gatto Monticone,
J. Forneris,
M. Levi,
A. Battiato,
F. Picollo,
P. Olivero,
P. Traina,
E. Moreva,
E. Enrico,
G. Brida,
I. P. Degiovanni,
M. Genovese,
G. Amato,
L. Boarino
Abstract:
Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of…
▽ More
Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centres emitting in the Near Infra-Red. In the present work, we report on the coupling of native near-infrared-emitting centres in high-quality single crystal diamond with Solid Immersion Lens structures fabricated by Focused Ion Beam lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.
△ Less
Submitted 25 August, 2016;
originally announced August 2016.
-
Effects of high-power laser irradiation on sub-superficial graphitic layers in single crystal diamond
Authors:
F. Picollo,
S. Rubanov,
C. Tomba,
A. Battiato,
E. Enrico,
A. Perrat-Mabilon,
C. Peaucelle,
T. N. Tran Thi,
L. Boarino,
E. Gheeraert,
P. Olivero
Abstract:
We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different e…
▽ More
We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different electron microscopy techniques. The main feature observed after laser irradiation is the thickening of the pre-existing graphitic layer. Cross sectional SEM imaging was performed to directly measure the thickness of the modified layers, and subsequent selective etching of the buried layers was employed to both assess their graphitic nature and enhance the SEM imaging contrast. In particular, it was found that for optimal irradiation parameters the laser processing induces a six-fold increase the thickness of sub superficial graphitic layers without inducing mechanical failures in the surrounding crystal. TEM microscopy and EELS spectroscopy allowed a detailed analysis of the internal structure of the laser irradiated layers, highlighting the presence of different nano graphitic and amorphous layers. The obtained results demonstrate the effectiveness and versatility of high-power laser irradiation for an accurate tuning of the geometrical and structural features of graphitic structures embedded in single crystal diamond, and open new opportunities in diamond fabrication.
△ Less
Submitted 25 August, 2016;
originally announced August 2016.
-
Characterization of the recovery of mechanical properties of ion-implanted diamond after thermal annealing
Authors:
M. Mohr,
F. Picollo,
A. Battiato,
E. Bernardi,
J. Forneris,
A. Tengattini,
E. Enrico,
L. Boarino,
F. Bosia,
H. J. Fecht,
P. Olivero
Abstract:
Due to their outstanding mechanical properties, diamond and diamond-like materials find significant technological applications ranging from well-established industrial fields (cutting tools, coatings, etc.) to more advanced mechanical devices as micro- and nano-electromechanical systems. The use of energetic ions is a powerful and versatile tool to fabricate three-dimensional micro-mechanical stru…
▽ More
Due to their outstanding mechanical properties, diamond and diamond-like materials find significant technological applications ranging from well-established industrial fields (cutting tools, coatings, etc.) to more advanced mechanical devices as micro- and nano-electromechanical systems. The use of energetic ions is a powerful and versatile tool to fabricate three-dimensional micro-mechanical structures. In this context, it is of paramount importance to have an accurate knowledge of the effects of ion-induced structural damage on the mechanical properties of this material, firstly to predict potential undesired side-effects of the ion implantation process, and possibly to tailor the desired mechanical properties of the fabricated devices. We present an Atomic Force Microscopy (AFM) characterization of free-standing cantilevers in single-crystal diamond obtained by a FIB-assisted lift-off technique, which allows a determination of the Young's modulus of the diamond crystal after the MeV ion irradiation process concurrent to the fabrication of the microstructures, and subsequent thermal annealing. The AFM measurements were performed with the beam-bending technique and show that the thermal annealing process allows for an effective recovery of the mechanical properties of the pristine crystal.
△ Less
Submitted 25 August, 2016;
originally announced August 2016.
-
Electrical control of deep NV centers in diamond by means of sub-superficial graphitic micro-electrodes
Authors:
J. Forneris,
S. Ditalia Tchernij,
A. Tengattini,
E. Enrico,
V. Grilj,
N. Skukan,
G. Amato,
L. Boarino,
M. Jakšić,
P. Olivero
Abstract:
The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-ele…
▽ More
The control of the charge state of nitrogen-vacancy (NV) centers in diamond is of primary importance for the stabilization of their quantum-optical properties, in applications ranging from quantum sensing to quantum computing. To this purpose, in this work current-injecting micro-electrodes were fabricated in bulk diamond for NV charge state control. Buried (i.e. 3 μm in depth) graphitic micro-electrodes with spacing of 9 μm were created in single-crystal diamond substrates by means of a 6 MeV C scanning micro-beam. The high breakdown field of diamond was exploited to electrically control the variation in the relative population of the negative (NV-) and neutral (NV0) charge states of sub-superficial NV centers located in the inter- electrode gap regions, without incurring into current discharges. Photoluminescence spectra acquired from the biased electrodes exhibited an electrically induced increase up to 40% in the NV- population at the expense of the NV0 charge state. The variation in the relative charge state populations showed a linear dependence from the injected current at applied biases smaller than 250 V, and was interpreted as the result of electron trapping at NV sites, consistently with the Space Charge Limited Current interpretation of the abrupt current increase observed at 300 V bias voltage. In correspondence of such trap-filling-induced transition to a high-current regime, a strong electroluminescent emission from the NV0 centers was observed. In the high-current-injection regime, a decrease in the NV- population was observed, in contrast with the results obtained at lower bias voltages. These results disclose new possibilities in the electrical control of the charge state of NV centers located in the diamond bulk, which are characterized by longer spin coherence times.
△ Less
Submitted 19 July, 2016;
originally announced July 2016.
-
Electroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes
Authors:
J. Forneris,
S. Ditalia Tchernij,
A. Battiato,
F. Picollo,
A. Tengattini,
V. Grilj,
N. Skukan,
G. Amato,
L. Boarino,
I. P. Degiovanni,
E. Enrico,
P. Traina,
M. Jakšić,
M. Genovese,
P. Olivero
Abstract:
We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) charact…
▽ More
We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication.
△ Less
Submitted 8 July, 2015;
originally announced July 2015.
-
Realization of a diamond based high density multi electrode array by means of deep ion beam lithography
Authors:
Federico Picollo,
Alfio Battiato,
Ettore Bernardi,
Luca Boarino,
Emanuele Enrico,
Jacopo Forneris,
Daniele Gatto Monticone,
Paolo Olivero
Abstract:
In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an…
▽ More
In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an optically transparent and highly insulating matrix. The proposed fabrication process consists in the combination of Deep Ion Beam Lithography (DIBL) and Focused Ion Beam (FIB) milling. FIB micromachining is employed to define micro-apertures in the contact masks consisting of thin (<10 um) deposited metal layers through which ions are implanted in the sample. A prototypical single-cell biosensor was realized with the above described technique. The biosensor has 16 independent electrodes converging inside a circular area of 20 um diameter (typical neuroendocrine cells size) for the simultaneous recording of amperometric signals.
△ Less
Submitted 6 December, 2014;
originally announced December 2014.
-
Electrical stimulation of single-photon emission from nitrogen-vacancy centers in diamond with sub-superficial graphitic electrodes
Authors:
J. Forneris,
D. Gatto Monticone,
P. Traina,
V. Grilj,
G. Brida,
G. Amato,
L. Boarino,
E. Enrico,
I. P. Degiovanni,
E. Moreva,
N. Skukan,
M. Jakšić,
M. Genovese,
P. Olivero
Abstract:
Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond…
▽ More
Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs with a spacing of 10 $μ$m were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current above an effective voltage threshold of 150V, which was interpreted according to the theory of Space Charge Limited Current. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced bright electroluminescent emission from native neutrally-charged nitrogen-vacancy centers ($NV^0$); the acquired spectra highlighted the absence of EL associated with radiation damage.
△ Less
Submitted 12 September, 2014; v1 submitted 1 August, 2014;
originally announced August 2014.
-
Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes
Authors:
J. Forneris,
A. Battiato,
D. Gatto Monticone,
F. Picollo,
G. Amato,
L. Boarino,
G. Brida,
I. P. Degiovanni,
E. Enrico,
M. Genovese,
E. Moreva,
P. Traina,
C. Verona,
G. Verona-Rinati,
P. Olivero
Abstract:
Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of colour centres in diamond. Di…
▽ More
Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of colour centres in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the colour centres. With this purpose, buried graphitic electrodes with a spacing of 10 micrometers were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He micro-beam. The current flowing in the gap region between the electrodes upon the application of a 250 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of colour centres localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centres ($NV^0$, $λ_{ZPL}$ = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400-500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected ($λ_{ZPL}$ = 536.3 nm, $λ_{ZPL}$ = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centres. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.
△ Less
Submitted 29 July, 2014;
originally announced July 2014.
-
Magnetic and electronic transport percolation in epitaxial GeMn films
Authors:
N. Pinto,
L. Morresi,
M. Ficcadenti,
R. Murri,
F. D'Orazio,
F. Lucari,
L. Boarino,
G. Amato
Abstract:
Electronic transport and magnetic properties of Ge1-xMnx/Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an insulator-like behavior in the whole temperature range and, below about 80 K, two distinct activation energies are observed. At a higher temperature value, TR, resis…
▽ More
Electronic transport and magnetic properties of Ge1-xMnx/Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an insulator-like behavior in the whole temperature range and, below about 80 K, two distinct activation energies are observed. At a higher temperature value, TR, resistivity experiences a sudden reduction. Hall coefficient shows a strong contribution from the anomalous Hall effect and, at TR, a sign inversion, from positive to negative, is recorded. The magnetic properties, inferred from magneto-optical Kerr effect, evidence a progressive decrease of the ferromagnetic long range order as the temperature is raised, with a Curie temperature TC not far from TR. The transport and magnetic results are qualitatively consistent with a percolation mechanism due to bound magnetic polarons in a GeMn diluted magnetic semiconductor, with localized holes [A. Kaminski and S. Das Sarma, Phys. Rev. B 68, 235210 (2003)].
△ Less
Submitted 5 September, 2005;
originally announced September 2005.
