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Spin Texture Control and Magnetic Gap Engineering in a Ferromagnetic Insulator-Topological Insulator Sandwiched Heterostructure
Authors:
Mohammad T. H. Bhuiyan,
Qile Li,
James Blyth,
Ji-Eun Lee,
Jonathan Denlinger,
Jaime Sánchez-Barriga,
Alexander Fedorov,
Anton Tadich,
Emile Reinks,
Sung-Kwan Mo,
Alexei Fedorov,
Oliver J. Clark,
Mark T. Edmonds
Abstract:
Quantum materials combining magnetism and topological fermions are a key platform for low-energy electronics, spintronics, and quantum phases that break time-reversal symmetry (TRS), such as the quantum anomalous Hall effect (QAHE). Coupling a topological insulator to a magnetic material allows proximity magnetization with the potential to achieve these phases at elevated temperatures. One potenti…
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Quantum materials combining magnetism and topological fermions are a key platform for low-energy electronics, spintronics, and quantum phases that break time-reversal symmetry (TRS), such as the quantum anomalous Hall effect (QAHE). Coupling a topological insulator to a magnetic material allows proximity magnetization with the potential to achieve these phases at elevated temperatures. One potential architecture for realizing QAHE at elevated temperature is a heterostructure comprising two single-septuple layers (1SL) of MnBi2Te4 (a 2D ferromagnetic insulator) with four-quintuple layer (4QL) Bi2Te3 in the middle. However, the origin of this gap has not yet been explicitly determined, as there are other non-magnetic mechanisms that have been shown to produce bandgaps in similar systems. Here, through spin- and angle-resolved photoemission, the magnetic nature of the gap opening is investigated to demonstrates direct control of the spin state via small magnetic fields and confirm the magnetic origin of the gap through spin splitting and broken TRS. Furthermore, the hallmark chiral spin texture of non-magnetic topological insulators is preserved away from the Γ-point, despite the large 72+/-10 meV exchange gap at the Dirac point. The robust magnetic gap and controllable spin texture hold significant promise for future technologies requiring both magnetic properties and topological protection.
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Submitted 13 March, 2025;
originally announced March 2025.
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Three-dimensional flat band in ultra-thin Kagome metal Mn3Sn film
Authors:
Mengting Zhao,
James Blyth,
Grace L. Causer,
Hongrun Zhang,
Tianye Yu,
Jiayu Liu,
Wenchuan Jin,
Mohammad T. H. Bhuiyan,
Zheng-Tai Liu,
Mao Ye,
Yi Du,
Zhiping Yin,
Michael S. Fuhrer,
Anton Tadich,
Mark T. Edmonds
Abstract:
Flat bands with small energy dispersion can give rise to strongly correlated electronic and topological phases, especially when located at the Fermi level. Whilst flat bands have been experimentally realized in two-dimensional (2D) twisted van der Waals heterostructures, they are highly sensitive to twist angle, necessitating complex fabrication techniques. Geometrically frustrated kagome lattices…
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Flat bands with small energy dispersion can give rise to strongly correlated electronic and topological phases, especially when located at the Fermi level. Whilst flat bands have been experimentally realized in two-dimensional (2D) twisted van der Waals heterostructures, they are highly sensitive to twist angle, necessitating complex fabrication techniques. Geometrically frustrated kagome lattices have emerged as an attractive platform as they natively host flat bands that have been observed experimentally in quasi-2D bulk-crystal kagome metals. An outstanding experimental question is whether flat bands can be realized in atomically thin metals, with opportunities for stronger electron-electron interactions through tuning of the surrounding dielectric environment. Here we use angle-resolved photoelectron spectroscopy, scanning tunnelling microscopy and band structure calculations to show that ultra-thin films of the kagome metal Mn3Sn host a robust dispersionless flat band with a bandwidth of 50 meV. Furthermore, we demonstrate chemical tuning of the flat band to near the Fermi level via manganese defect engineering. The realization of tunable kagome-derived flat bands in an ultra-thin kagome metal, represents a promising platform to study strongly correlated and topological phenomena, with applications in quantum computing, spintronics and low-energy electronics.
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Submitted 7 March, 2025;
originally announced March 2025.
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Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2
Authors:
Liam Watson,
Iolanda Di Bernardo,
James Blyth,
Benjamin Lowe,
Thi-Hai-Yen Vu,
Daniel McEwen,
Mark T. Edmonds,
Anton Tadich,
Michael S. Fuhrer
Abstract:
The strong electron-electron interaction in transition metal dichalcogenides (TMDs) gives rise to phenomena such as strong exciton and trion binding and excitonic condensation, as well as large negative exchange and correlation contributions to the electron energies, resulting in negative electronic compressibility. Here we use angle-resolved photoemission spectroscopy to demonstrate a striking ef…
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The strong electron-electron interaction in transition metal dichalcogenides (TMDs) gives rise to phenomena such as strong exciton and trion binding and excitonic condensation, as well as large negative exchange and correlation contributions to the electron energies, resulting in negative electronic compressibility. Here we use angle-resolved photoemission spectroscopy to demonstrate a striking effect of negative electronic compressibility in semiconducting TMD MoS2 on the charge transfer to and from a partial overlayer of monolayer semimetallic WTe2. We track the changes in binding energy of the valence bands of both WTe2 and MoS2 as a function of surface transfer doping with donor (K) and acceptor (F4-TCNQ) species. Donor doping increases the binding energy of the MoS2 valence band, as expected, while counterintuitively reducing the binding energy of the WTe2 valence bands and core levels. The inverse effect is observed for acceptor doping, where a typical reduction in the MoS2 binding energies is accopanied by an unexpected increase in those of WTe2. The observations imply a reversal of the expected charge transfer; donor (acceptor) deposition decreases (increases) the carrier density in the WTe2 adlayer. The charge transfer reversal is a direct consequence of the negative electronic compressibility of the MoS2 surface layer, for which addition (subtraction) of charge leads to attraction (repulsion) of further charge from neighbouring layers. These findings highlight the importance of many-body interactions for the electrons in transition metal dichalcogenides and underscore the potential for exploring strongly correlated quantum states in two-dimensional semiconductors.
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Submitted 18 September, 2024;
originally announced September 2024.
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Reactivity of ultra-thin Kagome Metal FeSn towards Oxygen and Water
Authors:
James Blyth,
Sadhana Sridhar,
Mengting Zhao,
Sajid Ali2,
Thi Hai Yen Vu,
Qile Li,
Johnathon Maniatis,
Grace Causer,
Michael S. Fuhrer,
Nikhil V. Medhekar,
Anton Tadich,
Mark Edmonds
Abstract:
The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and spintronics because of an ideal combination of novel topological phases and high-temperature magnetic ordering. Robust synthesis methods for ultra-thin FeSn films, as well as an understanding of their air stability is cr…
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The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and spintronics because of an ideal combination of novel topological phases and high-temperature magnetic ordering. Robust synthesis methods for ultra-thin FeSn films, as well as an understanding of their air stability is crucial for its development and long-term operation in future devices. In this work, we realize large area, sub-10 nm epitaxial FeSn thin films, and explore the oxidation process via synchrotron-based photoelectron spectroscopy using in-situ oxygen and water dosing, as well as ex-situ air exposure. Upon exposure to atmosphere the FeSn films are shown to be highly reactive, with a stable ~3 nm thick oxide layer forming at the surface within 10 minutes. Notably the surface Fe remains largely unoxidized when compared to Sn, which undergoes near-complete oxidation. This is further confirmed with controlled in-situ dosing of O2 and H2O where only the Sn2 (stanene) inter-layers within the FeSn lattice oxidize, suggesting the Fe3Sn kagome layers remain almost pristine. These results are in excellent agreement with first principles calculations, which show Fe-O bonds to the Fe3Sn layer are energetically unfavorable, and furthermore, a large formation energy preference of 1.37 eV for Sn-O bonds in the stanene Sn2 layer over Sn-O bonds in the kagome Fe3Sn layer. The demonstration that oxidation only occurs within the stanene layers may provide new avenues in how to engineer, handle and prepare future kagome metal devices.
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Submitted 9 July, 2024;
originally announced July 2024.
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Defects, band bending and ionization rings in MoS2
Authors:
Iolanda Di Bernardo,
James Blyth,
Liam Watson,
Kaijian Xing,
Yi-Hsun Chen,
Shao-Yu Chen,
Mark T. Edmonds,
Michael S. Fuhrer
Abstract:
Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a comb…
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Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a combination of scanning tunnelling microscopy (STM) and STS to study embedded sulphur vacancies in bulk MoS2 crystals. We observe spectroscopic features dispersing in real space and in energy, which we interpret as tip position- and bias-dependent ionization of the sulphur vacancy donor due to tip induced band bending (TIBB). The observations indicate that care must be taken in interpreting defect spectra as reflecting in-gap density of states, and may explain discrepancies in the literature.
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Submitted 18 July, 2023;
originally announced July 2023.
