-
Universal logic with encoded spin qubits in silicon
Authors:
Aaron J. Weinstein,
Matthew D. Reed,
Aaron M. Jones,
Reed W. Andrews,
David Barnes,
Jacob Z. Blumoff,
Larken E. Euliss,
Kevin Eng,
Bryan Fong,
Sieu D. Ha,
Daniel R. Hulbert,
Clayton Jackson,
Michael Jura,
Tyler E. Keating,
Joseph Kerckhoff,
Andrey A. Kiselev,
Justine Matten,
Golam Sabbir,
Aaron Smith,
Jeffrey Wright,
Matthew T. Rakher,
Thaddeus D. Ladd,
Matthew G. Borselli
Abstract:
Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-…
▽ More
Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-yielding quantum dot arrays. Here we show a device made using the single-layer etch-defined gate electrode architecture that achieves both the required functional yield needed for full control and the coherence necessary for thousands of calibrated exchange pulses to be applied. We measure an average two-qubit Clifford fidelity of $97.1 \pm 0.2\%$ with randomized benchmarking. We also use interleaved randomized benchmarking to demonstrate the controlled-NOT gate with $96.3 \pm 0.7\%$ fidelity, SWAP with $99.3 \pm 0.5\%$ fidelity, and a specialized entangling gate that limits spreading of leakage with $93.8 \pm 0.7\%$ fidelity.
△ Less
Submitted 7 February, 2022;
originally announced February 2022.
-
Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
Authors:
Edward H. Chen,
Kate Raach,
Andrew Pan,
Andrey A. Kiselev,
Edwin Acuna,
Jacob Z. Blumoff,
Teresa Brecht,
Maxwell Choi,
Wonill Ha,
Daniel Hulbert,
Michael P. Jura,
Tyler Keating,
Ramsey Noah,
Bo Sun,
Bryan J. Thomas,
Matthew Borselli,
C. A. C. Jackson,
Matthew T. Rakher,
Richard S. Ross
Abstract:
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniq…
▽ More
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniques, easing the extraction of energy spectra in multiple-dot devices. We use this method to measure dozens of valley excited state energies spanning multiple wafers, quantum dots, and orbital states, crucial for evaluating the dependence of valley splitting on quantum well width and other epitaxial conditions. Our results suggest that narrower wells can be beneficial for improving valley splittings, but this effect can be confounded by variations in growth and fabrication conditions. These results underscore the importance of valley splitting measurements for guiding the development of Si qubits.
△ Less
Submitted 26 February, 2021; v1 submitted 9 October, 2020;
originally announced October 2020.
-
Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
Authors:
A. M. Jones,
E. J. Pritchett,
E. H. Chen,
T. E. Keating,
R. W. Andrews,
J. Z. Blumoff,
L. A. De Lorenzo,
K. Eng,
S. D. Ha,
A. A. Kiselev,
S. M. Meenehan,
S. T. Merkel,
J. A. Wright,
L. F. Edge,
R. S. Ross,
M. T. Rakher,
M. G. Borselli,
A. Hunter
Abstract:
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the mea…
▽ More
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting.
△ Less
Submitted 21 September, 2018;
originally announced September 2018.
-
Micromachined integrated quantum circuit containing a superconducting qubit
Authors:
T. Brecht,
Y. Chu,
C. Axline,
W. Pfaff,
J. Z. Blumoff,
K. Chou,
L. Krayzman,
L. Frunzio,
R. J. Schoelkopf
Abstract:
We present a device demonstrating a lithographically patterned transmon integrated with a micromachined cavity resonator. Our two-cavity, one-qubit device is a multilayer microwave integrated quantum circuit (MMIQC), comprising a basic unit capable of performing circuit-QED (cQED) operations. We describe the qubit-cavity coupling mechanism of a specialized geometry using an electric field picture…
▽ More
We present a device demonstrating a lithographically patterned transmon integrated with a micromachined cavity resonator. Our two-cavity, one-qubit device is a multilayer microwave integrated quantum circuit (MMIQC), comprising a basic unit capable of performing circuit-QED (cQED) operations. We describe the qubit-cavity coupling mechanism of a specialized geometry using an electric field picture and a circuit model, and finally obtain specific system parameters using simulations. Fabrication of the MMIQC includes lithography, etching, and metallic bonding of silicon wafers. Superconducting wafer bonding is a critical capability that is demonstrated by a micromachined storage cavity lifetime $34.3~\mathrm{μs}$, corresponding to a quality factor of 2 million at single-photon energies. The transmon coherence times are $T_1=6.4~\mathrm{μs}$, and $T_2^{Echo}= 11.7~\mathrm{μs}$. We measure qubit-cavity dispersive coupling with rate $χ_{qμ}/2π=-1.17~$MHz, constituting a Jaynes-Cummings system with an interaction strength $g/2π=49~$MHz. With these parameters we are able to demonstrate cQED operations in the strong dispersive regime with ease. Finally, we highlight several improvements and anticipated extensions of the technology to complex MMIQCs.
△ Less
Submitted 7 November, 2016;
originally announced November 2016.
