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Thermolectricity in irradiated bilayer graphene flakes
Authors:
Cynthia Ihuoma Osuala,
Tanu Choudhary,
Raju K. Biswas,
Sudin Ganguly,
Santanu K. Maiti
Abstract:
We present a comprehensive study on enhancing the thermoelectric (TE) performance of bilayer graphene (BLG) through irradiation with arbitrarily polarized light, focusing on $AA$- and $AB$-stacked configurations with zigzag edges. Utilizing a combination of tight-binding theory and density functional theory (DFT), we systematically analyze the impact of light irradiation on electronic and phononic…
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We present a comprehensive study on enhancing the thermoelectric (TE) performance of bilayer graphene (BLG) through irradiation with arbitrarily polarized light, focusing on $AA$- and $AB$-stacked configurations with zigzag edges. Utilizing a combination of tight-binding theory and density functional theory (DFT), we systematically analyze the impact of light irradiation on electronic and phononic transport properties. Light irradiation alters the electronic hopping parameters, creating an asymmetric transmission function, which significantly increases the Seebeck coefficient, thereby boosting the overall {\it figure of merit} (FOM). For the phononic contribution, DFT calculations reveal that $AB$-stacked BLG exhibits lower lattice thermal conductivity compared to $AA$-stacked, attributed to enhanced anharmonic scattering and phonon group velocity. The combined analysis shows that FOM exceeds unity in both stacking types, with notable improvements near the irradiation-induced gap. Additionally, we explore the dependence of FOM on the system dimensions and temperature, demonstrating that light-irradiated BLG holds great promise for efficient thermoelectric energy conversion and waste heat recovery. Our results show favorable responses over a wide range of irradiation parameters. These findings provide crucial insights into optimizing BLG for advanced TE applications through light-induced modifications.
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Submitted 24 September, 2024; v1 submitted 16 September, 2024;
originally announced September 2024.
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Enhanced thermoelectric properties of two-dimensional Janus ferromagnetic LaBrI with strain-induced valley degeneracy
Authors:
Anuja Kumari,
D. K. Raman,
Tanu Choudhary,
Raju K. Biswas,
Abhinav Nag,
Santanu K. Maiti,
Jagdish Kumar
Abstract:
Since the successful synthesis of the MoSSe monolayer, which violated the out-of-plane mirror symmetry of TMDs monolayers, considerable and systematic research has been conducted on Janus monolayer materials. By systematically analyzing the LaBrI monolayer, we are able to learn more about the novel Janus material by focusing on the halogen family next to group VIA (S, Se, Te). The structural optim…
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Since the successful synthesis of the MoSSe monolayer, which violated the out-of-plane mirror symmetry of TMDs monolayers, considerable and systematic research has been conducted on Janus monolayer materials. By systematically analyzing the LaBrI monolayer, we are able to learn more about the novel Janus material by focusing on the halogen family next to group VIA (S, Se, Te). The structural optimizations have been carried out using pseudopotential based Quantum espresso code. Computed structural parameters are in good agreement with literature reports. The optimized crystal structures were used for computing effect of strain on electronic and thermoelectric properties. Dynamical stability predicts that this material can withstand up to 10% of tensile strain. Computed electronic structure reveals material to be indirect wide band gap ferromagnet with magnetic moment 1μB. With increase in the biaxial tensile strain the band gap decreases. Furthermore, the computed magneto-thermoelectric properties predict high Seebeck coefficient ~ 400 μV/K and low thermal conductivity of ~ 0.93 W/m.K in LaBrI which results in a high ZT ~ 1.84 for 4% strain at 800 K. The present study supports the fact that tensile strain on ferromagnetic LaBrI material can further enhance TE properties making it to be a promising material for TE applications at higher temperatures.
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Submitted 2 April, 2025; v1 submitted 3 January, 2024;
originally announced January 2024.
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Realizing high Near-Room-Temperature Thermoelectric Performance in n-type Ag2Se through Rashba Effect and Entropy Engineering
Authors:
Raju K Biswas,
Swapan K Pati
Abstract:
Although there are enormous numbers of high-temperature thermoelectric materials present, designing a near-room-temperature especially n-type thermoelectric material with high zT is extremely challenging. Generally, pristine Ag2Se exhibits unusual low thermal conductivity along with high electrical conductivity and Seebeck coefficient, which leads to high thermoelectric performance (n-type) at roo…
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Although there are enormous numbers of high-temperature thermoelectric materials present, designing a near-room-temperature especially n-type thermoelectric material with high zT is extremely challenging. Generally, pristine Ag2Se exhibits unusual low thermal conductivity along with high electrical conductivity and Seebeck coefficient, which leads to high thermoelectric performance (n-type) at room temperature. Herein, we report a pseudoternary phase, Ag2Se0.5Te0.25S0.25, which shows improved thermoelectric performance (zT ~ 2.1 at 400 K). Density functional theory reveals that the Rashba type of spin-dependent band spitting originated because of Te-doping, enhancing carrier mobility. Using density functional perturbation theory, we hereby realize that the intrinsic carrier mobility is not only controlled by carrier effective mass, neither deformation potential theory, instead it is substantially limited by longitudinal optical phonon scattering. In fact, locally off-centered S atoms and rising configurational entropy via substitution of Te and S atoms in Ag2Se significantly reduce the lattice thermal conductivity (klat ~ 0.34 at 400 K). In order to accurately obtain electrical as well as thermal transport coefficient, we adopt deformation potential theory based on Boltzmann transport formalism. The combined consequence of the Rashba effect coupled with configurational entropy synergistically results in such high thermoelectric performance with the development of new n-type thermoelectric material working at the near-room-temperature regime.
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Submitted 28 March, 2021;
originally announced March 2021.
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Vibrational Spectra of MO (M=Sn/Pb) in Their Bulk and Single Layer Forms: Role of Avoided Crossing in their Thermodynamic Properties
Authors:
Raju K Biswas,
Swapan K Pati
Abstract:
We report ab-initio calculations of the phonon dispersion relation on the bulk and single layer of SnO and PbO. We identify Raman active modes and infrared active modes at the zone center Γ point. In agreement with experimental observations of Raman spectroscopy measurement, we find that A1g mode is higher in frequency than that of Eg mode. Moreover, the reason behind the shift of A2u mode to high…
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We report ab-initio calculations of the phonon dispersion relation on the bulk and single layer of SnO and PbO. We identify Raman active modes and infrared active modes at the zone center Γ point. In agreement with experimental observations of Raman spectroscopy measurement, we find that A1g mode is higher in frequency than that of Eg mode. Moreover, the reason behind the shift of A2u mode to higher frequency for monolayer of both SnO and PbO is revealed from our calculations. We also find that long-range Coulomb interaction enhances the dielectric constant and Born effective charges in bulk SnO and bulk PbO, compared to their monolayer. Here, we observe avoided crossing or Landau degeneracy between longitudinal acoustics (LA) and low energetic transverse optical (TO) modes in bulk form of both SnO and PbO. Additionally, monolayer SnO also shows low energetic Raman modes (Eg and A1g) of same frequency as bulk. As a result, we notice avoided crossing between LA and TO modes in monolayer SnO. Interestingly, higher Born effective charge and low dielectric constant enhances self-force constants and the interatomic force constants (IFCs) between the M-O bonds. The enhanced force constants give rise to higher vibrational frequency of phonon modes for monolayer PbO. Our studies reveal that due to avoided crossing between two degenerate bands, the phonon dispersion near high symmetry X point lowers specific heat and vibrational entropy in bulk SnO, bulk PbO and only in monolayer SnO upto temperature 150 K. Moreover, the large mass difference between Pb and Oxygen atoms and absence of interlayer van der Waal interactions give rise to high phonon vibration which reduces the occurrence of band crossing between two degenerate energy levels. The absence of avoided crossing leads higher specific heat and vibrational entropy in monolayer PbO at low temperatures.
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Submitted 20 July, 2019;
originally announced July 2019.