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Room Temperature Dy Spin-Flop Switching in Strained DyFeO3 Thin Films
Authors:
Banani Biswas,
Federico Stramaglia,
Ekatarina V. Pomjakushina,
Thomas Lippert,
Carlos A. F. Vaz,
Christof W. Schneider
Abstract:
Epitaxial strain in thin films can yield surprising magnetic and electronic properties not accessible in bulk. One materials system destined to be explored in this direction are orthoferrites with two intertwined spin systems where strain is predicted to have a significant impact on magnetic and polar properties by modifying the strength of the rare earth-Fe interaction. Here we report the impact…
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Epitaxial strain in thin films can yield surprising magnetic and electronic properties not accessible in bulk. One materials system destined to be explored in this direction are orthoferrites with two intertwined spin systems where strain is predicted to have a significant impact on magnetic and polar properties by modifying the strength of the rare earth-Fe interaction. Here we report the impact of epitaxial strain is reported on the linear magneto-electric DyFeO3, a canted bulk antiferromagnet with a high Neel temperature (645 K) exhibiting a Dy-induced spin reorientation transition at approx. 50 K and antiferromagnetic ordering of the Dy spins at 4 K. An increase in the spin transition of > 20 K is found and a strictly linear, abnormal temperature magnetic response under an applied magnetic field between 100 and 400 K for [010]-oriented DyFeO3 thin films with an in-plane compressive strain between 2% and 3.5%. At room temperature and above, we found that application of approx. 0.06 T causes a spin-flop of the Dy spins coupled to the antiferromagnetic Fe spin lattice, whereby the Dy spins change from an antiferromagnetic alignment to ferromagnetic. The spin-flop field gives a lower energy bound on the Dy-Fe exchange interaction of approx. 15 microeV.
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Submitted 5 February, 2025;
originally announced February 2025.
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Two superconducting thin films systems with potential integration of different quantum functionalities
Authors:
Snehal Mandal,
Biplab Biswas,
Suvankar Purakait,
Anupam Roy,
Biswarup Satpati,
Indranil Das,
B. N. Dev
Abstract:
Quantum computation based on superconducting circuits utilizes superconducting qubits with Josephson tunnel junctions. Engineering high-coherence qubits requires materials optimization. In this work, we present two superconducting thin film systems, grown on silicon (Si), and one obtained from the other via annealing. Cobalt (Co) thin films grown on Si were found to be superconducting [EPL 131 (20…
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Quantum computation based on superconducting circuits utilizes superconducting qubits with Josephson tunnel junctions. Engineering high-coherence qubits requires materials optimization. In this work, we present two superconducting thin film systems, grown on silicon (Si), and one obtained from the other via annealing. Cobalt (Co) thin films grown on Si were found to be superconducting [EPL 131 (2020) 47001]. These films also happen to be a self-organised hybrid superconductor/ferromagnet/superconductor (S/F/S) structure. The S/F/S hybrids are important for superconducting $π$-qubits [PRL 95 (2005) 097001] and in quantum information processing. Here we present our results on the superconductivity of a hybrid Co film followed by the superconductivity of a CoSi$_2$ film, which was prepared by annealing the Co film. CoSi$_2$, with its $1/f$ noise about three orders of magnitude smaller compared to the most commonly used superconductor aluminium (Al), is a promising material for high-coherence qubits. The hybrid Co film revealed superconducting transition temperature $T_c$ = 5 K and anisotropy in the upper critical field between the in-plane and out-of-plane directions. The anisotropy was of the order of ratio of lateral dimensions to thickness of the superconducting Co grains, suggesting a quasi-2D nature of superconductivity. On the other hand, CoSi$_2$ film showed a $T_c$ of 900 mK. In the resistivity vs. temperature curve, we observe a peak near $T_c$. Magnetic field scan as a function of $T$ shows a monotonic increase in intensity of this peak with temperature. The origin of the peak has been explained in terms of parallel resistive model for the particular measurement configuration. Although our CoSi$_2$ film contains grain boundaries, we observed a perpendicular critical field of 15 mT and a critical current density of 3.8x10$^7$ A/m$^2$, comparable with epitaxial CoSi$_2$ films.
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Submitted 27 December, 2024;
originally announced December 2024.
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Colloidal Clusters as models for chiral active micromotors
Authors:
Bipul Biswas,
Manasa Kandula
Abstract:
Circular swimmers with tunable orbit radius and chirality are gaining attention due to their potential to illustrate novel collective phases in simulations and synthetic and biological active matter. Here, we present a facile experimental strategy for fabricating active rotors using chemically cross-linked clusters of Janus colloids. Janus clusters are propelled by induced charge electrophoresis i…
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Circular swimmers with tunable orbit radius and chirality are gaining attention due to their potential to illustrate novel collective phases in simulations and synthetic and biological active matter. Here, we present a facile experimental strategy for fabricating active rotors using chemically cross-linked clusters of Janus colloids. Janus clusters are propelled by induced charge electrophoresis in an alternating electric field. We demonstrate capillary-assisted assembly as a feasible path toward expanding the fabrication process to get large amounts of uniform circular clusters. Systematic studies of the Janus clusters reveal circular motion with tunable angular velocity, orbit radius, and chirality and a relation between the radius of gyration of the cluster and their rotational dynamics. Importantly, clusters with uniform azimuthal angles behave distinctly exhibiting larger orbit radii, while those with random angles exhibit higher angular velocities and smaller radii. We also validate the kinetic model for clusters beyond dimers. Collectively, our studies highlight that Janus clusters as promising candidates as controlled circular rotors with tunable properties and, hence in the future, will facilitate studies on the collective behaviors of synthetic chiral rotors.
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Submitted 21 July, 2024;
originally announced July 2024.
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Correlation of Structural and Magnetic Properties of RFeO3 (R=Dy, Lu)
Authors:
Banani Biswas,
Pavel Naumov,
Federico Motti,
Patrick Hautle,
Marek Bartkowiak,
Ekaterina V. Pomjakushina,
Uwe Stuhr,
Dirk Fuchs,
Thomas Lippert,
Christof W. Schneider
Abstract:
In orthoferrites the rare-earth (R) ion has a big impact on structural and magnetic properties in particular the ionic size influences the octahedral tilt and the R3+- Fe3+ interaction modifies properties like the spin reorientation. Growth induced strain in thin films is another means to modify materials properties since the sign of strain affects the bond length and therefore directly the orbita…
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In orthoferrites the rare-earth (R) ion has a big impact on structural and magnetic properties in particular the ionic size influences the octahedral tilt and the R3+- Fe3+ interaction modifies properties like the spin reorientation. Growth induced strain in thin films is another means to modify materials properties since the sign of strain affects the bond length and therefore directly the orbital interaction. Our study focuses on epitaxially grown (010) oriented DyFeO3 and LuFeO3 thin films, thereby investigating the impact of compressive lattice strain on the magnetically active Dy3+ and magnetically inactive Lu3+ compared to uniaxially strained single crystal DyFeO3. The DyFeO3 films exhibits a shift of more than 20K in spin-reorientation temperatures, maintain the antiferromagnetic Γ4 phase of the Fe-lattice below the spin reorientation, and show double step hysteresis loops for both in-plane directions between 5 K and 390 K. This is the signature of an Fe-spin induced ferromagnetic Dy3+ lattice above the Néel temperature of the Dy. The observed shift in the film spin reorientation temperatures vs lattice strain is in good agreement with isostatic single crystal neutron diffraction experiments with a rate of 2 K/ kbar bar.
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Submitted 1 April, 2024;
originally announced April 2024.
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Role of Dy on the magnetic properties of orthorhombic DyFeO3
Authors:
Banani Biswas,
Veronica F. Michel,
Oystein S. Fjellvag,
Gesara Bimashofer,
Max Dobeli,
Michal Jambor,
Lukas Keller,
Elisabeth Muller,
Victor Ukleev,
Ekaterina V. Pomjakushina,
Deepak Singh,
Uwe Stuhr,
Carlos A. F. Vaz,
Thomas Lippert,
Christof W. Schneider
Abstract:
Orthoferrites are a class of magnetic materials with a magnetic ordering temperature above 600 K, predominant G-type antiferromagnetic ordering of the Fe-spin system and, depending on the rare-earth ion, a spin reorientation of the Fe spin taking place at lower temperatures. DyFeO3 is of particular interest since the spin reorientation is classified as a Morin transition with the transition temper…
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Orthoferrites are a class of magnetic materials with a magnetic ordering temperature above 600 K, predominant G-type antiferromagnetic ordering of the Fe-spin system and, depending on the rare-earth ion, a spin reorientation of the Fe spin taking place at lower temperatures. DyFeO3 is of particular interest since the spin reorientation is classified as a Morin transition with the transition temperature depending strongly on the Dy-Fe interaction. Here, we report a detailed study of the magnetic and structural properties of microcrystalline DyFeO3 powder and bulk single crystal using neutron diffraction and magnetometry between 1.5 and 450 K. We find that, while the magnetic properties of the single crystal are largely as expected, the powder shows strongly modified magnetic properties, including a modified spin reorientation and a smaller Dy-Fe interaction energy of the order of 10 μeV. Subtle structural differences between powder and single crystal show that they belong to distinct magnetic space groups. In addition, the Dy ordering at 2 K in the powder is incommensurate, with a modulation vector of 0.0173(5) c*, corresponding to a periodicity of ~58 unit cells.
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Submitted 13 July, 2022;
originally announced July 2022.
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Secondary Phase Limited Metal-Insulator Phase Transition in Chromium Nitride Thin Films
Authors:
Bidesh Biswas,
Sourjyadeep Chakraborty,
Anjana Joseph,
Shashidhara Acharya,
Ashalatha Indiradevi Kamalasanan Pillai,
Chandrabhas Narayana,
Vijay Bhatia,
Magnus Garbrecht,
Bivas Saha
Abstract:
Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and corrosion-resistant properties. In recent years, CrN has also attracted significant interest due to its high thermoelectric power factor, and for its unique and intriguin…
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Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and corrosion-resistant properties. In recent years, CrN has also attracted significant interest due to its high thermoelectric power factor, and for its unique and intriguing metal-insulator phase transition. While CrN bulk single-crystals exhibit the characteristic metal-insulator transition accompanied with structural (orthorhombic-to-rocksalt) and magnetic (antiferromagnetic-to-paramagnetic) transition at ~260-280K, observation of such phase transition in thin-film CrN has been scarce and highly debated. In this work, the formation of the secondary metallic Cr2N phase during the growth is demonstrated to inhibit the observation of metal-insulator phase transition in CrN thin films. When the Cr-flux during deposition is reduced below a critical limit, epitaxial and stoichiometric CrN thin film is obtained that reproducibly exhibits the phase transition. Annealing of the mixed-phase film inside reducing NH3 environment converts the Cr2N into CrN, and a discontinuity in the electrical resistivity at ~ 277 K appears which supports the underlying hypothesis. A clear demonstration of the origin behind the controversy of the metal-insulator transition in CrN thin films marks significant progress and would enable its nanoscale device realization.
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Submitted 19 January, 2022;
originally announced January 2022.
