Showing 1–9 of 9 results for author: Bisquert, J

Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications

Authors: Agustin Bou, Patricio Ramirez, Juan Bisquert

Abstract: Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their memristic properties and are candidate devices for liquid neuromorphic systems. Such properties are visible through an inductive hysteresis in the current-volt… ▽ More Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their memristic properties and are candidate devices for liquid neuromorphic systems. Such properties are visible through an inductive hysteresis in the current-voltage sweeps, which is then confirmed by the inductive characteristics in impedance spectroscopy measurements. The dynamic behaviour of memristors is largely determined by a voltage-dependent relaxation time. Here, we obtain the kinetic relaxation time of a multipore nanofluidic memristor via its impedance spectra. We show that the behaviour of this characteristic of memristors is comparable to that of natural neural systems. Hence, we open a way to study the mimic of neuron characteristics by searching for memristors with the same kinetic times. △ Less

Submitted 14 September, 2024; originally announced September 2024.

A biology-inspired model for the electrical response of solid state memristors

Authors: Agustin Bou, Cedric Gonzales, Pablo P. Boix, Antonio Guerrero, Juan Bisquert

Abstract: Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes transitions of the conductance, determined by different physical mechanisms such as the formation of conducting filaments in an insulating surrounding. Here we p… ▽ More Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes transitions of the conductance, determined by different physical mechanisms such as the formation of conducting filaments in an insulating surrounding. Here we provide a unified description of the set and reset processes, by means of a single voltage activated relaxation time of the memory variable. This approach is based on the Hodgkin-Huxley model that is widely used to describe action potentials dynamics in neurons. We focus on halide perovskite memristors and their intersection with neuroscience-inspired computing. We show that the modelling approach adeptly replicates the experimental traits of both volatile and nonvolatile memristors. Its versatility extends across various device materials and configurations, capturing nuanced behaviors such as scan rate- and upper vertex-dependence. The model also describes well the response to sequences of voltage pulses that cause synaptic potentiation effects. This model serves as a potent tool for comprehending and probing the underlying mechanisms of memristors, by indicating the relaxation properties that control observable response, which opens the way for a detailed physical interpretation. △ Less

Submitted 14 September, 2024; originally announced September 2024.

Ionic-electronic transistors small signal AC admittance: Theory and experiment

Authors: Juan Bisquert, Scott T. Keene

Abstract: The transient behaviour of organic electrochemical transistors (OECT) is complex due to mixed ionic-electronic properties that play a central role in bioelectronics, sensing and neuromorphic applications. We investigate the impedance response of ion-controlled transistors using a model that combines electronic motion along the channel and vertical ion diffusion by insertion from the electrolyte, d… ▽ More The transient behaviour of organic electrochemical transistors (OECT) is complex due to mixed ionic-electronic properties that play a central role in bioelectronics, sensing and neuromorphic applications. We investigate the impedance response of ion-controlled transistors using a model that combines electronic motion along the channel and vertical ion diffusion by insertion from the electrolyte, depending on the chemical capacitance, the diffusion coefficient of ions, the electronic transit time, and the series impedance components due to the electrolyte and its interfaces. Based on transport and charge conservation equations, we show that the vertical impedance produces a standard result of diffusion in intercalation systems, while the transversal impedance (drain current vs gate voltage) contains the electronic parameters of hole accumulation and transport along the channel. We establish the spectral shapes of drain and gate currents and the complex admittance spectra by reference to equivalent circuit models for the vertical and transversal impedances, that describe well the measurements of a PEDOT:PSS OECT. We obtain new insights to the determination of mobility by the relationship between drain and gate currents. △ Less

Submitted 5 August, 2024; originally announced August 2024.

Biorealistic Response in Optoelectrically-Driven Flexible Halide-Perovskite Single-Crystal Memristors

Authors: Ivan Matchenya, Anton Khanas, Roman Podgornyi, Daniil Shirkin, Alexey Ekgardt, Nikita Sizykh, Sergey Anoshkin, Dmitry V. Krasnikov, Alexei Yulin, Alexey Zhukov, Albert G. Nasibulin, Ivan Scheblykin, Anatoly Pushkarev, Andrei Zenkevich, Juan Bisquert, Alexandr Marunchenko

Abstract: The transition to smart wearable and flexible optoelectronic devices communicating with each other and performing neuromorphic computing at the edge is a big goal in next-generation optoelectronics. These devices should perform their regular tasks supported by energy-efficient in-memory calculations. Here, we study the response of the CsPbBr$_3$ halide-perovskite single crystal fabricated on the f… ▽ More The transition to smart wearable and flexible optoelectronic devices communicating with each other and performing neuromorphic computing at the edge is a big goal in next-generation optoelectronics. These devices should perform their regular tasks supported by energy-efficient in-memory calculations. Here, we study the response of the CsPbBr$_3$ halide-perovskite single crystal fabricated on the flexible polymer substrate and integrated with the single-walled carbon nanotube thin film electrodes in a lateral geometry. We show both photodetection functions combined with the synaptic functionality in our device under the application of hybrid optoelectrical stimuli. Furthermore, we demonstrate that our device exhibits frequency-dependent bidirectional modification of synaptic weight with a sliding threshold similar to biologically plausible Bienenstock-Cooper-Munro learning. The demonstrated optoelectronic synaptic behavior in halide-perovskite single-crystals opens the opportunity for the development of hybrid organic-inorganic artificial visual systems. △ Less

Submitted 25 April, 2025; v1 submitted 14 December, 2023; originally announced December 2023.

Interpretation of Mott-Schottky Plots of Photoanodes for Water Splitting

Authors: Sandheep Ravishankar, Juan Bisquert, Thomas Kirchartz

Abstract: A large body of literature reports that both bismuth vanadate and haematite photoanodes are semiconductors with an extremely high doping density between 10^18-10^21 cm^-3. Such values are obtained from Mott-Schottky plots by assuming that the measured capacitance is dominated by the capacitance of the depletion layer formed by the doping density within the photoanode. In this work, we show that su… ▽ More A large body of literature reports that both bismuth vanadate and haematite photoanodes are semiconductors with an extremely high doping density between 10^18-10^21 cm^-3. Such values are obtained from Mott-Schottky plots by assuming that the measured capacitance is dominated by the capacitance of the depletion layer formed by the doping density within the photoanode. In this work, we show that such an assumption is erroneous in many cases because the injection of electrons from the collecting contact creates a ubiquitous capacitance step that is very difficult to distinguish from that of the depletion layer. Based on this reasoning, we derive an analytical resolution limit that is independent of the assumed active area and surface roughness of the photoanode, below which doping densities cannot be measured in a capacitance measurement. We find that the reported doping densities in literature lie very close to this value and therefore conclude that there is no credible evidence from capacitance measurements that confirms that bismuth vanadate and haematite photoanodes contain high doping densities. △ Less

Submitted 21 March, 2022; v1 submitted 11 January, 2022; originally announced January 2022.

Unravelling the role of vacancies in lead halide perovskite through electrical switching of photoluminescence

Authors: Cheng Li, Antonio Guerrero, Sven Huettner, Juan Bisquert

Abstract: Methylammonium lead triiodide perovskite (MAPbI3) semiconductor displays outstanding photovoltaic and light emitting properties. We address the unique behavior in which a bias voltage can be used to switch on and off the luminescence of a planar film with lateral symmetric electrodes. Instead of a homogeneous suppression of emission, as in other organic semiconductor films, in MAPbI3 films a dark… ▽ More Methylammonium lead triiodide perovskite (MAPbI3) semiconductor displays outstanding photovoltaic and light emitting properties. We address the unique behavior in which a bias voltage can be used to switch on and off the luminescence of a planar film with lateral symmetric electrodes. Instead of a homogeneous suppression of emission, as in other organic semiconductor films, in MAPbI3 films a dark region advances from the positive electrode at a slow velocity of order of 1 um s-1. Here we explain the existence of the sharp front in terms of the drift of ionic vacancies that drastically reduce the radiative recombination rate in the film. Based on a dynamic transport model we show that the square reciprocal of the electrical current is linear with time in agreement with the experimental observations. This insight leads to a direct determination of the diffusion coefficient of iodine vacancies D = 6 10-9 cm2 s-1 and provides detailed information and control on the effect of ionic conduction over the electrooptical properties of hybrid perovskite materials. △ Less

Submitted 20 April, 2018; originally announced April 2018.

Calculation of Energy Band Diagram of a Photoelectrochemical Water Splitting Cell

Authors: P. Cendula, S. D. Tilley, S. Gimenez, M. Schmid, J. Bisquert, M. Graetzel, J. O. Schumacher

Abstract: A physical model is presented for a semiconductor electrode of a photoelectrochemical (PEC) cell, accounting for the potential drop in the Helmholtz layer. Hence both band edge pinning and unpinning are naturally included in our description. The model is based on the continuity equations for charge carriers and direct charge transfer from the energy bands to the electrolyte. A quantitative calcula… ▽ More A physical model is presented for a semiconductor electrode of a photoelectrochemical (PEC) cell, accounting for the potential drop in the Helmholtz layer. Hence both band edge pinning and unpinning are naturally included in our description. The model is based on the continuity equations for charge carriers and direct charge transfer from the energy bands to the electrolyte. A quantitative calculation of the position of the energy bands and the variation of the quasi-Fermi levels in the semiconductor with respect to the water reduction and oxidation potentials is presented. Calculated current-voltage curves are compared with established analytical models and measurement. Our model calculations are suitable to enhance understanding and improve properties of semiconductors for photoelectrochemical water splitting. △ Less

Submitted 22 July, 2014; originally announced July 2014.

Comments: 20 pages single column, 5 figures, 2 tables, submission to ACS

Charge separation in organic photovoltaic cells

Authors: Paraskevas Giazitzidis, Panos Argyrakis, Juan Bisquert, Vyacheslav S. Vikhrenko

Abstract: We consider a simple model for the geminate electron-hole separation process in organic photovoltaic cells, in order to illustrate the influence of dimensionality of conducting channels on the efficiency of the process. The Miller-Abrahams expression for the transition rates between nearest neighbor sites was used for simulating random walks of the electron in the Coulomb field of the hole. The no… ▽ More We consider a simple model for the geminate electron-hole separation process in organic photovoltaic cells, in order to illustrate the influence of dimensionality of conducting channels on the efficiency of the process. The Miller-Abrahams expression for the transition rates between nearest neighbor sites was used for simulating random walks of the electron in the Coulomb field of the hole. The non-equilibrium kinetic Monte Carlo simulation results qualitatively confirm the equilibrium estimations, although quantitatively the efficiency of the higher dimensional systems is less pronounced. The lifetime of the electron prior to recombination is approximately equal to the lifetime prior to dissociation. Their values indicate that electrons perform long stochastic walks before they are captured by the collector or recombined. The non-equilibrium free energy considerably differs from the equilibrium one. The efficiency of the separation process decreases with increasing the distance to the collector, and this decrease is considerably less pronounced for the three dimensional system. The simulation results are in good agreement with the extension of the continuum Onsager theory that accounts for the finite recombination rate at nonzero reaction radius and non-exponential kinetics of the charge separation process. △ Less

Submitted 26 March, 2014; originally announced March 2014.

Journal ref: Organic Electronics , 2014, 15, 1043 - 1049

Assessing Possibilities & Limits for Solar Cells

Authors: Pabitra K. Nayak, Juan Bisquert, David Cahen

Abstract: This paper has been withdrawn by the authors. This paper has been withdrawn by the authors. △ Less

Submitted 8 March, 2011; v1 submitted 13 February, 2011; originally announced February 2011.

Comments: This paper has been withdrawn by the authors