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Showing 1–7 of 7 results for author: Birkhölzer, Y

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  1. arXiv:2412.17192  [pdf

    cond-mat.mtrl-sci

    Picosecond expansion in LaAlO3 resonantly driven by infrared-active phonons

    Authors: Jakob Gollwitzer, Jeffrey Z. Kaaret, Y. Eren Suyolcu, Guru Khalsa, Rylan C. Fernandes, Oleg Gorobtsov, Sören Buchenau, ChanJu You, Jayanti Higgins, Ryan S. Russell, Ziming Shao, Yorick A. Birkhölzer, Takahiro Sato, Matthieu Chollet, Giacomo Coslovich, Mario Brützam, Christo Guguschev, John W. Harter, Ankit S. Disa, Darrell G. Schlom, Nicole A. Benedek, Andrej Singer

    Abstract: We investigate the ultrafast structural dynamics of LaAlO3 thin films driven by short mid-infrared laser pulses at 20 THz. Time-resolved X-ray diffraction reveals an immediate lattice expansion and an acoustic breathing mode of the film. First-principles theory and a spring-mass model identify the direct coupling between coherently driven infrared-active phonons and strain as the underlying mechan… ▽ More

    Submitted 22 December, 2024; originally announced December 2024.

  2. arXiv:2212.12096  [pdf

    cond-mat.mtrl-sci physics.app-ph

    Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy

    Authors: Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

    Abstract: We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti… ▽ More

    Submitted 22 December, 2022; originally announced December 2022.

    Comments: 19 pages, 7 figures, 2 tables, 2 pages supplementary materials

  3. arXiv:2210.07408  [pdf, other

    cond-mat.mtrl-sci cond-mat.mes-hall

    High-strain-induced local modification of the electronic properties of VO$_2$ thin films

    Authors: Yorick A. Birkhölzer, Kai Sotthewes, Nicolas Gauquelin, Lars Riekehr, Daen Jannis, Emma van der Minne, Yibin Bu, Johan Verbeeck, Harold J. W. Zandvliet, Gertjan Koster, Guus Rijnders

    Abstract: Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long and short range elastic distortions, as well as the symmetry change, and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the… ▽ More

    Submitted 13 October, 2022; originally announced October 2022.

    Comments: Y.A.B. and K.S. contributed equally. 30 pages, 4 figures, Supplemental Material (28 pages, 16 figures)

    Journal ref: ACS Applied Electronic Materials 2022

  4. arXiv:2202.02372  [pdf

    cond-mat.dis-nn cond-mat.mes-hall cond-mat.stat-mech cs.NE nlin.CD

    Direct observation of a dynamical glass transition in a nanomagnetic artificial Hopfield network

    Authors: Michael Saccone, Francesco Caravelli, Kevin Hofhuis, Sergii Parchenko, Yorick A. Birkhölzer, Scott Dhuey, Armin Kleibert, Sebastiaan van Dijken, Cristiano Nisoli, Alan Farhan

    Abstract: Spin glasses, generally defined as disordered systems with randomized competing interactions, are a widely investigated complex system. Theoretical models describing spin glasses are broadly used in other complex systems, such as those describing brain function, error-correcting codes, or stock-market dynamics. This wide interest in spin glasses provides strong motivation to generate an artificial… ▽ More

    Submitted 4 February, 2022; originally announced February 2022.

    Comments: Initial submission to Nature Physics. 20 pages, 4 figures

    Journal ref: Nature Physics 18, 517-521 (2022)

  5. Giant strain gradient elasticity in SrTiO3 membranes: bending versus stretching

    Authors: Varun Harbola, Samuel Crossley, Seung Sae Hong, Di Lu, Yorick A. Birkholzer, Yasuyuki Hikita, Harold Y. Hwang

    Abstract: Young's modulus determines the mechanical loads required to elastically stretch a material, and also, the loads required to bend it, given that bending stretches one surface while compressing the opposite one. Flexoelectric materials have the additional property of becoming electrically polarized when bent. While numerous studies have characterized this flexoelectric coupling, its impact on the me… ▽ More

    Submitted 23 September, 2020; originally announced September 2020.

  6. arXiv:2006.00054  [pdf

    physics.app-ph cond-mat.mtrl-sci

    Single-source, solvent-free, room temperature deposition of black $γ$-CsSnI$_3$ films

    Authors: Vivien M. Kiyek, Yorick A. Birkhölzer, Yury Smirnov, Martin Ledinsky, Zdenek Remes, Jamo Momand, Bart J. Kooi, Gertjan Koster, Guus Rijnders, Monica Morales-Masis

    Abstract: The presence of a non-optically active polymorph (yellow-phase) competing with the optically active polymorph (black $γ$-phase) at room temperature in CsSnI3 and the susceptibility of Sn to oxidation, represent two of the biggest obstacles for the exploitation of CsSnI3 in optoelectronic devices. Here room-temperature single-source in vacuum deposition of smooth black $γ$ - CsSnI3 thin films is re… ▽ More

    Submitted 29 April, 2020; originally announced June 2020.

    Comments: Accepted by Advanced Materials Interfaces, 16 pages, 4 figures, and supplement

    Journal ref: Adv. Mater. Interfaces (2020), 2000162

  7. Stabilization of phase-pure rhombohedral HfZrO4 in Pulsed Laser Deposited thin films

    Authors: Laura Bégon-Lours, Martijn Mulder, Pavan Nukala, Sytze de Graaf, Yorick Birkhölzer, Bart Kooi, Beatriz Noheda, Gertjan Koster, Guus Rijnders

    Abstract: Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques… ▽ More

    Submitted 25 November, 2019; originally announced November 2019.

    Journal ref: Phys. Rev. Materials 4, 043401 (2020)