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Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification
Authors:
Dario De Angelis,
Francesco Presel,
Naila Jabeen,
Luca Bignardi,
Daniel Lizzit,
Paolo Lacovig,
Silvano Lizzit,
Tiziano Montini,
Paolo Fornasiero,
Dario Alfè,
Alessandro Baraldi
Abstract:
A two-dimensional layer of oxide reveals itself as a essential element to drive the photocatalytic activity in a nanostructured hybrid material, which combines high-quality epitaxial graphene and titanium dioxide nanoparticles. In particular, it has been revealed that the addition of a 2D Ti oxide layer sandwiched between graphene and metal induces a p-doping of graphene and a consistent shift in…
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A two-dimensional layer of oxide reveals itself as a essential element to drive the photocatalytic activity in a nanostructured hybrid material, which combines high-quality epitaxial graphene and titanium dioxide nanoparticles. In particular, it has been revealed that the addition of a 2D Ti oxide layer sandwiched between graphene and metal induces a p-doping of graphene and a consistent shift in the Ti d states. These modifications induced by the interfacial oxide layer induce a reduction of the probability of charge carrier recombination and enhance the photocatalytic activity of the heterostructure. This is indicative of a capital role played by thin oxide films in fine-tuning the properties of heterostructures based on graphene and pave the way to new combinations of graphene/oxides for photocatalysis-oriented applications.
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Submitted 11 May, 2023;
originally announced May 2023.
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Ultrafast electronic line width broadening in the C 1s core level of graphene
Authors:
Davide Curcio,
Sahar Pakdel,
Klara Volckaert,
Jill A. Miwa,
Søren Ulstrup,
Nicola Lanatà,
Marco Bianchi,
Dmytro Kutnyakhov,
Federico Pressacco,
Günter Brenner,
Siarhei Dziarzhytski,
Harald Redlin,
Steinn Agustsson,
Katerina Medjanik,
Dmitry Vasilyev,
Hans-Joachim Elmers,
Gerd Schönhense,
Christian Tusche,
Ying-Jiun Chen,
Florian Speck,
Thomas Seyller,
Kevin Bühlmann,
Rafael Gort,
Florian Diekmann,
Kai Rossnagel
, et al. (9 additional authors not shown)
Abstract:
Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivity, elementary excitations and magnetism. X-ray photoemission spectroscopy (XPS) in particular, can provide information about the electronic and vibrational many-body interactions in a solid as these are reflected in the…
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Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivity, elementary excitations and magnetism. X-ray photoemission spectroscopy (XPS) in particular, can provide information about the electronic and vibrational many-body interactions in a solid as these are reflected in the detailed energy distribution of the photoelectrons. Ultrafast pump-probe techniques add a new dimension to such studies, introducing the ability to probe a transient state of the many-body system. Here we use a free electron laser to investigate the effect of a transiently excited electron gas on the core level spectrum of graphene, showing that it leads to a large broadening of the C 1s peak. Confirming a decade-old prediction, the broadening is found to be caused by an exchange of energy and momentum between the photoemitted core electron and the hot electron system, rather than by vibrational excitations. This interpretation is supported by a line shape analysis that accounts for the presence of the excited electrons. Fitting the spectra to this model directly yields the electronic temperature of the system, in agreement with electronic temperature values obtained from valence band data. Furthermore, making use of time- and momentum-resolved C 1s spectra, we illustrate how the momentum change of the outgoing core electrons leads to a small but detectable change in the time-resolved photoelectron diffraction pattern and to a nearly complete elimination of the core level binding energy variation associated with the narrow $σ$-band in the C 1s state. The results demonstrate that the XPS line shape can be used as an element-specific and local probe of the excited electron system and that X-ray photoelectron diffraction investigations remain feasible at very high electronic temperatures.
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Submitted 21 May, 2021;
originally announced May 2021.
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Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors
Authors:
P. Majchrzak,
K. Volckaert,
A. G. Cabo,
D. Biswas,
M. Bianchi,
S. K. Mahatha,
M. Dendzik,
F. Andreatta,
S. S. Grønborg,
I. Marković,
J. M. Riley,
J. C. Johannsen,
D. Lizzit,
L. Bignardi,
S. Lizzit,
C. Cacho,
O. Alexander,
D. Matselyukh,
A. S. Wyatt,
R. T. Chapman,
E. Springate,
J. V. Lauritsen,
P. D. C. King,
C. E. Sanders,
J. A. Miwa
, et al. (2 additional authors not shown)
Abstract:
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing…
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The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.
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Submitted 31 March, 2021;
originally announced March 2021.
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Layer and orbital interference effects in photoemission from transition metal dichalcogenides
Authors:
Habib Rostami,
Klara Volckaert,
Nicola Lanata,
Sanjoy K. Mahatha,
Charlotte E. Sanders,
Marco Bianchi,
Daniel Lizzit,
Luca Bignardi,
Silvano Lizzit,
Jill A. Miwa,
Alexander V. Balatsky,
Philip Hofmann,
Søren Ulstrup
Abstract:
In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a $\vec{k} \cdot \vec{p}$ Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the…
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In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a $\vec{k} \cdot \vec{p}$ Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the $\bar{K}$-valley of MoS$_2$. In SL MoS$_2$ we find a significant masking of intensity outside the first Brillouin zone, which originates from an in-plane interference effect between photoelectrons emitted from the Mo $d$ orbitals. In BL MoS$_2$ an additional inter-layer interference effect leads to a distinctive modulation of intensity with photon energy. Finally, we use the semiconductor Bloch equations to model the optical excitation in a time- and angle-resolved pump-probe photoemission experiment. We find that the momentum dependence of an optically excited population in the conduction band leads to an observable dichroism in both SL and BL MoS$_2$.
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Submitted 4 October, 2019;
originally announced October 2019.
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Momentum-resolved linear dichroism in bilayer MoS$_2$
Authors:
Klara Volckaert,
Habib Rostami,
Deepnarayan Biswas,
Igor Marković,
Federico Andreatta,
Charlotte E. Sanders,
Paulina Majchrzak,
Cephise Cacho,
Richard T. Chapman,
Adam Wyatt,
Emma Springate,
Daniel Lizzit,
Luca Bignardi,
Silvano Lizzit,
Sanjoy K. Mahatha,
Marco Bianchi,
Nicola Lanata,
Phil D. C. King,
Jill A. Miwa,
Alexander V. Balatsky,
Philip Hofmann,
Søren Ulstrup
Abstract:
Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemissio…
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Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemission spectroscopy. We model the polarization-dependent photoemission intensity in the transiently-populated conduction band using the semiconductor Bloch equations and show that the observed dichroism emerges from intralayer single-particle effects within the isotropic part of the dispersion. This leads to optical excitations with an anisotropic momentum-dependence in an otherwise inversion symmetric material.
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Submitted 4 October, 2019;
originally announced October 2019.
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Larger than 80$\,$% Valley Polarization of Free Carriers in Singly-Oriented Single Layer WS$_2$ on Au(111)
Authors:
H. Beyer,
G. Rohde,
A. Grubišić Čabo,
A. Stange,
T. Jacobsen,
L. Bignardi,
D. Lizzit,
P. Lacovig,
C. E. Sanders,
S. Lizzit,
K. Rossnagel,
P. Hofmann,
M. Bauer
Abstract:
We employ time- and angle-resolved photoemission spectroscopy to study the spin- and valley-selective photoexcitation and dynamics of free carriers at the K and K' points in singly-oriented single layer WS$_2$/Au(111). Our results reveal that in the valence band maximum an ultimate valley polarization of free holes of 84$\,$% can be achieved upon excitation with circularly polarized light at room…
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We employ time- and angle-resolved photoemission spectroscopy to study the spin- and valley-selective photoexcitation and dynamics of free carriers at the K and K' points in singly-oriented single layer WS$_2$/Au(111). Our results reveal that in the valence band maximum an ultimate valley polarization of free holes of 84$\,$% can be achieved upon excitation with circularly polarized light at room temperature. Notably, we observe a significantly smaller valley polarization for the photoexcited free electrons in the conduction band minimum. Clear differences in the carrier dynamics between electrons and holes imply intervalley scattering processes into dark states being responsible for the efficient depolarization of the excited electron population.
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Submitted 24 July, 2019;
originally announced July 2019.
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Electron-phonon coupling in single-layer MoS2
Authors:
Sanjoy K. Mahatha,
Arlette S. Ngankeu,
Nicki Frank Hinsche,
Ingrid Mertig,
Kevin Guilloy,
Peter L. Matzen,
Marco Bianchi,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Daniel Lizzit,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Philip Hofmann
Abstract:
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye mo…
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The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $λ$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS$_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS$_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS$_2$ at K is almost degenerate with the local valence band maximum at $Γ$ can potentially be used to tune the strength of the electron-phonon interaction in this material.
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Submitted 18 November, 2018;
originally announced November 2018.
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Spin structure of K valleys in single-layer WS$_2$ on Au(111)
Authors:
Philipp Eickholt,
Charlotte Sanders,
Maciej Dendzik,
Luca Bignardi,
Daniel Lizzit,
Silvano Lizzit,
Albert Bruix,
Philip Hofmann,
Markus Donath
Abstract:
The spin structure of the valence and conduction bands at the $\overline{\text{K}}$ and $\overline{\text{K}}$' valleys of single-layer WS$_2$ on Au(111) is determined by spin- and angle-resolved photoemission and inverse photoemission. The bands confining the direct band gap of 1.98 eV are out-of-plane spin polarized with spin-dependent energy splittings of 417 meV in the valence band and 16 meV i…
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The spin structure of the valence and conduction bands at the $\overline{\text{K}}$ and $\overline{\text{K}}$' valleys of single-layer WS$_2$ on Au(111) is determined by spin- and angle-resolved photoemission and inverse photoemission. The bands confining the direct band gap of 1.98 eV are out-of-plane spin polarized with spin-dependent energy splittings of 417 meV in the valence band and 16 meV in the conduction band. The sequence of the spin-split bands is the same in the valence and in the conduction bands and opposite at the $\overline{\text{K}}$ and the $\overline{\text{K}}$' high-symmetry points. The first observation explains "dark" excitons discussed in optical experiments, the latter points to coupled spin and valley physics in electron transport. The experimentally observed band dispersions are discussed along with band structure calculations for a freestanding single layer and for a single layer on Au(111).
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Submitted 1 October, 2018; v1 submitted 30 July, 2018;
originally announced July 2018.
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Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
Authors:
Luca Bignardi,
Daniel Lizzit,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Moritz Ewert,
Lars Buß,
Jens Falta,
Jan Ingo Flege,
Alessandro Baraldi,
Rosanna Larciprete,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, s…
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We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.
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Submitted 19 September, 2018; v1 submitted 13 June, 2018;
originally announced June 2018.
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Novel single-layer vanadium sulphide phases
Authors:
Fabian Arnold,
Raluca-Maria Stan,
Sanjoy K. Mahatha,
H. E. Lund,
Davide Curcio,
Maciej Dendzik,
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Daniel Lizzit,
Zheshen Li,
Marco Bianchi,
Jill A. Miwa,
Martin Bremholm,
Silvano Lizzit,
Philip Hofmann,
C. E. Sanders
Abstract:
VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new…
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VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new two-dimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H2S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments.
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Submitted 21 March, 2018;
originally announced March 2018.
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Epitaxial Growth of Single-Orientation High-Quality MoS$_2$ Monolayers
Authors:
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Daniel Lizzit,
Francesco Presel,
Dario De Angelis,
Nicoleta Apostol,
Pranab Kumar Das,
Jun Fujii,
Ivana Vobornik,
Rosanna Larciprete,
Alessandro Baraldi,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- a…
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We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.
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Submitted 9 February, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Photoemission Investigation of Oxygen Intercalated Epitaxial Graphene on Ru(0001)
Authors:
Søren Ulstrup,
Paolo Lacovig,
Fabrizio Orlando,
Daniel Lizzit,
Luca Bignardi,
Matteo Dalmiglio,
Marco Bianchi,
Federico Mazzola,
Alessandro Baraldi,
Rosanna Larciprete,
Philip Hofmann,
Silvano Lizzit
Abstract:
We study the formation of epitaxial graphene on Ru(0001) using fast x-ray photoelectron spectroscopy during the growth process. The assignment of different C 1s and Ru 3d core level components and their evolution during the growth process gives a detailed insight into the graphene formation and the strongly varying graphene-Ru interaction strength within the large moire unit cell. Subsequent inter…
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We study the formation of epitaxial graphene on Ru(0001) using fast x-ray photoelectron spectroscopy during the growth process. The assignment of different C 1s and Ru 3d core level components and their evolution during the growth process gives a detailed insight into the graphene formation and the strongly varying graphene-Ru interaction strength within the large moire unit cell. Subsequent intercalation of oxygen can be achieved at elevated temperature and the core level spectra show a conversion of the strongly corrugated to quasi free-standing graphene, characterised by a single narrow C 1s component. This conversion and the accompanying flattening of the graphene layer is also confirmed by x-ray photoelectron diffraction. The effect of oxygen intercalation on the electronic structure is studied using angle-resolved photoemission of the valence band states. For graphene/Ru(0001), the strong graphene-substrate hybridisation disrupts the π-band dispersion but oxygen intercalation fully restores the π-band with a strong p-doping that shifts the Dirac point 785 meV above the Fermi level. The doping of the system is highly tunable, as the additional exposure to rubidium can convert the carrier filling to n-type with the Dirac point 970 meV below the Fermi level.
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Submitted 31 January, 2018;
originally announced February 2018.
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Electron-phonon coupling in the spin-split valence band of single layer WS$_2$
Authors:
Nicki Frank Hinsche,
Arlette S. Ngankeu,
Kevin Guilloy,
Sanjoy K. Mahatha,
Antonija Grubišić Čabo,
Marco Bianchi,
Maciej Dendzik,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Kristian Sommer Thygesen,
Philip Hofmann
Abstract:
The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is stud…
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The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $λ_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.
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Submitted 17 June, 2017;
originally announced June 2017.
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Thermolubricity of Xe monolayers on graphene
Authors:
M. Pierno,
L. Bignardi,
M. C. Righi,
L. Bruschi,
S. Gottardi,
M. Stöhr,
P. L. Silvestrelli,
P. Rudolf,
G. Mistura
Abstract:
The nanofriction of Xe monolayers deposited on graphene was explored with a quartz crystal microbalance (QCM) at temperatures between 25 and 50 K. Graphene was grown by chemical vapor deposition and transferred to the QCM electrodes with a polymer stamp. At low temperatures, the Xe monolayers are fully pinned to the graphene surface. Above 30 K, the Xe film slides and the depinning onset coverage…
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The nanofriction of Xe monolayers deposited on graphene was explored with a quartz crystal microbalance (QCM) at temperatures between 25 and 50 K. Graphene was grown by chemical vapor deposition and transferred to the QCM electrodes with a polymer stamp. At low temperatures, the Xe monolayers are fully pinned to the graphene surface. Above 30 K, the Xe film slides and the depinning onset coverage beyond which the film starts sliding decreases with temperature. Similar measurements repeated on bare gold show an enhanced slippage of the Xe films and a decrease of the depinning temperature below 25 K. Nanofriction measurements of krypton and nitrogen confirm this scenario.This thermolubric behavior is explained in terms of a recent theory of the size dependence of static friction between adsorbed islands and crystalline substrates.
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Submitted 26 September, 2013;
originally announced September 2013.
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Comparison of hot-electron transmission in ferromagnetic Ni on epitaxial and polycrystalline Schottky interfaces
Authors:
S. Parui,
K. G. Rana,
L. Bignardi,
P. Rudolf,
B. J. van Wees,
T. Banerjee
Abstract:
The hot-electron attenuation length in Ni is measured as a function of energy across two different Schottky interfaces viz. a polycrystalline Si(111)/Au and an epitaxial Si(111)/NiSi_2 interface using ballistic electron emission microscopy (BEEM). For similarly prepared Si(111) substrates and identical Ni thickness, the BEEM transmission is found to be lower for the polycrystalline interface than…
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The hot-electron attenuation length in Ni is measured as a function of energy across two different Schottky interfaces viz. a polycrystalline Si(111)/Au and an epitaxial Si(111)/NiSi_2 interface using ballistic electron emission microscopy (BEEM). For similarly prepared Si(111) substrates and identical Ni thickness, the BEEM transmission is found to be lower for the polycrystalline interface than for the epitaxial interface. However, in both cases, the hot-electron attenuation length in Ni is found to be the same. This is elucidated by the temperature-independent inelastic scattering, transmission probabilities across the Schottky interface, and scattering at dissimilar interfaces.
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Submitted 19 February, 2013;
originally announced February 2013.
