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A Combined DFT and MD Study on Interface Stability in Ferrite-Cementite Systems
Authors:
Pablo Canca,
Chu-Chun Fu,
Christophe J. Ortiz,
Blanca Biel
Abstract:
Understanding the atomic structure and energetic stability of ferrite-cementite interfaces is essential for optimizing the mechanical performance of steels, especially under extreme conditions such as those encountered in nuclear fusion environments. In this work, we combine Classical Molecular Dynamics (MD) and Density Functional Theory (DFT) to systematically investigate the stability of ferrite…
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Understanding the atomic structure and energetic stability of ferrite-cementite interfaces is essential for optimizing the mechanical performance of steels, especially under extreme conditions such as those encountered in nuclear fusion environments. In this work, we combine Classical Molecular Dynamics (MD) and Density Functional Theory (DFT) to systematically investigate the stability of ferrite-cementite interfaces within the Bagaryatskii Orientation Relationship. Three interface orientations and several cementite terminations are considered to identify the most stable configurations.
MD simulations reveal that the (010)||(11-2) and (001)||(1-10) orientations are energetically favourable for selected terminations, and these predictions are validated and refined by subsequent DFT calculations. A key result of our study is the destabilizing effect of interfacial carbon atoms, which increase the interface energy and decrease the Griffith energy, indicating a reduced resistance to fracture. This finding contrasts with earlier reports suggesting a stabilizing role for carbon.
Our analysis of the electronic structure shows that Fe-C bonding at the interface perturbs the metallic environment of interfacial Fe atoms. This bonding response explains the observed variations in magnetic moment and helps rationalize the trends in interface energy. We also establish correlations between interface energy, magnetic perturbation, and a bond-based descriptor quantifying new and broken bonds. These insights provide a physically grounded, predictive framework for the design and optimization of ferrite-cementite interfaces in advanced steels.
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Submitted 6 June, 2025;
originally announced June 2025.
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MXene-based Ti2C/Ta2C lateral heterostructure: an intrinsic room temperature ferromagnetic material with large magnetic anisotropy
Authors:
S. Özcan,
B. Biel
Abstract:
(2D) lateral heterostructures (LH) combining Ti$_2$C and Ta$_2$C MXenes were investigated by means of first-principles calculations. Our structural and elastic properties calculations show that the lateral Ti$_2$C/Ta$_2$C heterostructure results in a 2D material that is stronger than the original isolated MXenes and other 2D monolayers such as germanene or MoS$_2$. The analysis of the evolution of…
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(2D) lateral heterostructures (LH) combining Ti$_2$C and Ta$_2$C MXenes were investigated by means of first-principles calculations. Our structural and elastic properties calculations show that the lateral Ti$_2$C/Ta$_2$C heterostructure results in a 2D material that is stronger than the original isolated MXenes and other 2D monolayers such as germanene or MoS$_2$. The analysis of the evolution of the charge distribution with the size of the LH shows that, for small systems, it tends to distribute homogeneously between the two monolayers, whereas for larger systems electrons tend to accumulate in a region of $\sim$~6 Å around the interface. The work function of the heterostructure, one crucial parameter in the design of electronic nanodevices, is found to be lower than that of some conventional 2D LH. Remarkably, all the heterostructures studied show a very high Curie temperature (between 696 K and 1082 K), high magnetic moments %present in the ferromagnetic ground state, and high magnetic anisotropy energies. These features make (Ti$_2$C)/(Ta$_2$C) lateral heterostructures very suitable candidates for spintronic, photocatalysis, and data storage applications based upon 2D magnetic materials.
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Submitted 7 June, 2023;
originally announced June 2023.
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Sc2CX (X=N2, ON, O2) MXenes as a promising anode material: A first-principles study
Authors:
S. Özcan,
B. Biel
Abstract:
MXenes' tunable properties make them excellent candidates for many applications in future nanoelectronics. In this work, we explore the suitability of Sc$_2$CX (X=N$_2$, ON, O$_2$) MXenes to act as the active anode materials in Na-ion based batteries (NIBs) by means of \textsl{ab initio} simulations. After analyzing the structural and elastic properties of all the possible models to evaluate the e…
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MXenes' tunable properties make them excellent candidates for many applications in future nanoelectronics. In this work, we explore the suitability of Sc$_2$CX (X=N$_2$, ON, O$_2$) MXenes to act as the active anode materials in Na-ion based batteries (NIBs) by means of \textsl{ab initio} simulations. After analyzing the structural and elastic properties of all the possible models to evaluate the energetically favorable N and O functionalization sites, our calculations show that both Sc$_2$CON and Sc$_2$CN$_2$ present a clear metallic character, making them potential candidates as anode materials. The investigation of the most relevant features for anode performance, such as the adsorption and diffusion of Na atoms, the intrinsic capacity, the open circuit voltage, and the storage capacity show that both systems are serious alternatives to the most common 2D materials currently employed in alkali metal batteries. In particular, Sc$_2$CN$_2$ presents a better diffusion behavior thanks to the absence of Na clustering on its surface, with optimal diffusion barriers comparable to other 2D materials such as MoN$_2$, while the values of diffusion barriers for Sc$_2$CON are at least three times smaller than those found for other anode candidates. Similarly, while the capacity of Sc$_2$CON is close to the one reported for 2D Sc$_2$C, Sc$_2$CN$_2$ possesses a power density more than twice higher than the ones of 2D materials such as Sc$_2$C, graphite, and MoS$_2$. Our results thus confirm the urge for further experimental exploration of the MXene Sc$_2$CX (X=N$_2$, ON, O$_2$) family as anode material in NIBs.
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Submitted 23 January, 2023;
originally announced January 2023.
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Exploring a novel class of Janus MXenes by first principles calculations: structural, electronic and magnetic properties of Sc2CXT, X=O, F, OH; T=C, S, N
Authors:
Sibel Özcan,
Blanca Biel
Abstract:
The already intriguing electronic and optical properties of the MXene Sc2C family can be further tuned through a wide range of possible functionalizations. Here, by means of Density Functional Theory, we show that the 36 possible elements of the Janus MXT (M:Sc2C, X:O, F, OH, T:C, N, S) family, built by considering the four possible structural models (i) FCC, (ii) HCP , (iii) FCC + HCP, and (iv) H…
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The already intriguing electronic and optical properties of the MXene Sc2C family can be further tuned through a wide range of possible functionalizations. Here, by means of Density Functional Theory, we show that the 36 possible elements of the Janus MXT (M:Sc2C, X:O, F, OH, T:C, N, S) family, built by considering the four possible structural models (i) FCC, (ii) HCP , (iii) FCC + HCP, and (iv) HCP + FCC, are all potentially stable. The analysis of their mechanical properties shows the excellent mechanical flexibility of functionalized MXenes (f-MXenes) under large strain, making them more suitable for applications where stress could be an issue. Interestingly, while Sc2C presents a metallic character, Sc2COS, Sc2CFN and Sc2COHN are found to be semiconductors with bandgaps of 2.5 eV (indirect), 1.67 eV (indirect) and 1.1 eV (direct), respectively, which presents promising applications for nano- and optoelectronics. Moreover, Sc2CFC presents a ferromagnetic ground state with the 2x2x1 supercell magnetic moment of 3.99 muB, while the ground state of Sc2COHC might be antiferromagnetic with a magnetic moment of 3.98 muB, depending on the environment. Remarkably, the band structures of Sc2CFC and Sc2COHC present a half-metallic character with an HSE06 fundamental band gap of 0.60 eV and 0.48 eV, respectively. Our results confirm the extraordinary potential of the Janus MXT (M:Sc2C, X:O, F, OH, T:C, N, S) family for novel applications in 2D nano-,opto- and spintronics.
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Submitted 21 December, 2022;
originally announced December 2022.
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Non-perturbative indirect exchange in spin-valley coupled 2D crystals
Authors:
M. R. Losada,
A. T. Costa,
B. Biel,
J. Fernández-Rossier
Abstract:
We study indirect exchange interactions between localized spins of magnetic impurities in spin-valley coupled systems described with the Kane-Mele model. Our model captures the main ingredients of the energy bands of 1H transition metal dichalcogenides (TMDs) monolayers, such as 1H-MoS$_2$ and 1H-NbSe$_2$. To obtain the effective interactions, we use the exact diagonalization of the Hamiltonian, a…
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We study indirect exchange interactions between localized spins of magnetic impurities in spin-valley coupled systems described with the Kane-Mele model. Our model captures the main ingredients of the energy bands of 1H transition metal dichalcogenides (TMDs) monolayers, such as 1H-MoS$_2$ and 1H-NbSe$_2$. To obtain the effective interactions, we use the exact diagonalization of the Hamiltonian, avoiding momentum cut-offs. We start by comparing the standard perturbation expansion in terms of the Kondo exchange with the exact calculation of the interaction, treating the local spins classically. We find that perturbation theory works well even beyond the regime where the relevant figure of merit, the ratio between the exchange $J$ and the hopping $t$, is small. We verify that the effective indirect exchange Hamiltonian derived from perturbation theory also works in the non-perturbative regime. Additionally, we analyse the interplay between the symmetry of the different terms of the interaction (Heisenberg, Ising, and Dzyaloshinskii$-$Moriya (DM)), the Fermi-surface topology, and the crystallographic direction in which the impurities are placed. We show that the indirect exchange along the armchair direction is actually Heisenberg-like, due to the reflection symmetry of the crystal structure around this direction. Finally, we explore the exploitation of indirect exchange, combined with atomic manipulation, to engineer the Majumdar-Ghosh Model. Our results show that TMDs provide an extremely versatile platform to engineer indirect exchange interactions.
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Submitted 12 December, 2022; v1 submitted 28 November, 2022;
originally announced November 2022.
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Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics
Authors:
Paolo Marconcini,
Alessandro Cresti,
Francois Triozon,
Gianluca Fiori,
Blanca Biel,
Yann-Michel Niquet,
Massimo Macucci,
Stephan Roche
Abstract:
We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated b…
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We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated boron-doped graphene nanoribbon. Using a 3D Poisson/Schrödinger solver within the Non-Equilibrium Green's Functions (NEGF) formalism, self-consistent calculations of the gate-screened scattering potentials induced by the boron impurities have been performed, allowing the theoretical exploration of the tunability of transistor characteristics. The boron-doped graphene transistors are found to approach unipolar behavior as the boron concentration is increased, and by tuning the density of chemical dopants the electron-hole transport asymmetry can be finely adjusted. Correspondingly, the onset of a mobility gap in the device is observed. Although the computed asymmetries are not sufficient to warrant proper device operation, our results represent an initial step in the direction of improved transfer characteristics and, in particular, the developed simulation strategy is a powerful new tool for modeling doped graphene nanostructures.
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Submitted 28 February, 2013;
originally announced March 2013.
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Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances
Authors:
Blanca Biel,
François Triozon,
X. Blase,
Stephan Roche
Abstract:
We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasibound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based…
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We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasibound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically-doped graphene nanoribbons with sizes within the reach of conventional lithography.
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Submitted 14 June, 2009;
originally announced June 2009.
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Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons
Authors:
Blanca Biel,
X. Blase,
François Triozon,
Stephan Roche
Abstract:
We present first-principles calculations of quantum transport in chemically doped graphene nanoribbons with a width of up to 4 nm. The presence of boron and nitrogen impurities is shown to yield resonant backscattering, whose features are strongly dependent on the symmetry and the width of the ribbon, as well as the position of the dopants. Full suppression of backscattering is obtained on the p…
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We present first-principles calculations of quantum transport in chemically doped graphene nanoribbons with a width of up to 4 nm. The presence of boron and nitrogen impurities is shown to yield resonant backscattering, whose features are strongly dependent on the symmetry and the width of the ribbon, as well as the position of the dopants. Full suppression of backscattering is obtained on the pi-pi* plateau when the impurity preserves the mirror symmetry of armchair ribbons. Further, an unusual acceptor-donor transition is observed in zig-zag ribbons. These unconventional doping effects could be used to design novel types of switching devices.
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Submitted 16 February, 2009;
originally announced February 2009.
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Charge Transport in Disordered Graphene-Based Low Dimensional Materials
Authors:
Alessandro Cresti,
Norbert Nemec,
Blanca Biel,
Gabriel Niebler,
Francois Triozon,
Gianaurelio Cuniberti,
Stephan Roche
Abstract:
Two-dimensional graphene, carbon nanotubes and graphene nanoribbons represent a novel class of low dimensional materials that could serve as building blocks for future carbon-based nanoelectronics. Although these systems share a similar underlying electronic structure, whose exact details depend on confinement effects, crucial differences emerge when disorder comes into play. In this short revie…
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Two-dimensional graphene, carbon nanotubes and graphene nanoribbons represent a novel class of low dimensional materials that could serve as building blocks for future carbon-based nanoelectronics. Although these systems share a similar underlying electronic structure, whose exact details depend on confinement effects, crucial differences emerge when disorder comes into play. In this short review, we consider the transport properties of these materials, with particular emphasis to the case of graphene nanoribbons. After summarizing the electronic and transport properties of defect-free systems, we focus on the effects of a model disorder potential (Anderson-type), and illustrate how transport properties are sensitive to the underlying symmetry. We provide analytical expressions for the elastic mean free path of carbon nanotubes and graphene nanoribbons, and discuss the onset of weak and strong localization regimes, which are genuinely dependent on the transport dimensionality. We also consider the effects of edge disorder and roughness for graphene nanoribbons in relation to their armchair or zigzag orientation.
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Submitted 26 September, 2008;
originally announced September 2008.
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Ab initio study of transport properties in defected carbon nanotubes: an O(N) approach
Authors:
Blanca Biel,
F. J. Garcia-Vidal,
Angel Rubio,
Fernando Flores
Abstract:
A combination of ab initio simulations and linear-scaling Green's functions techniques is used to analyze the transport properties of long (up to one micron) carbon nanotubes with realistic disorder. The energetics and the influence of single defects (mono- and di-vacancies) on the electronic and transport properties of single-walled armchair carbon nanotubes are analyzed as a function of the tu…
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A combination of ab initio simulations and linear-scaling Green's functions techniques is used to analyze the transport properties of long (up to one micron) carbon nanotubes with realistic disorder. The energetics and the influence of single defects (mono- and di-vacancies) on the electronic and transport properties of single-walled armchair carbon nanotubes are analyzed as a function of the tube diameter by means of the local orbital first-principles Fireball code. Efficient O(N) Green's functions techniques framed within the Landauer-Buttiker formalism allow a statistical study of the nanotube conductance averaged over a large sample of defected tubes and thus extraction of the nanotubes localization length. Both the cases of zero and room temperature are addressed.
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Submitted 17 January, 2008;
originally announced January 2008.
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Transport Length Scales in Disordered Graphene-based Materials: Strong Localization Regimes and Dimensionality Effects
Authors:
Aurelien Lherbier,
Blanca Biel,
Yann-Michel Niquet,
Stephan Roche
Abstract:
We report on a numerical study of quantum transport in disordered two dimensional graphene and graphene nanoribbons. By using the Kubo and the Landauer approaches, transport length scales in the diffusive (mean free path, charge mobilities) and localized regimes (localization lengths) are computed, assuming a short range disorder (Anderson-type). In agreement with localization scaling theory, th…
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We report on a numerical study of quantum transport in disordered two dimensional graphene and graphene nanoribbons. By using the Kubo and the Landauer approaches, transport length scales in the diffusive (mean free path, charge mobilities) and localized regimes (localization lengths) are computed, assuming a short range disorder (Anderson-type). In agreement with localization scaling theory, the electronic systems are found to undergo a conventional Anderson localization in the zero temperature limit. Localization lengths in weakly disordered ribbons are found to differ by two orders of magnitude depending on their edge symmetry, but always remain several orders of magnitude smaller than those computed for 2D graphene for the same disorder strength. This pinpoints the role of transport dimensionality and edge effects.
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Submitted 10 January, 2008;
originally announced January 2008.
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Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime
Authors:
C. Gomez-Navarro,
P. J. De Pablo,
J. Gomez-Herrero,
B. Biel,
F. J. Garcia-Vidal,
A. Rubio,
F. Flores
Abstract:
Carbon nanotubes are a good realization of one-dimensional crystals where basic science and potential nanodevice applications merge. Defects are known to modify the electrical resistance of carbon nanotubes. They can be present in as-grown carbon nanotubes, but controlling externally their density opens a path towards the tuning of the nanotube electronic characteristics. In this work consecutiv…
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Carbon nanotubes are a good realization of one-dimensional crystals where basic science and potential nanodevice applications merge. Defects are known to modify the electrical resistance of carbon nanotubes. They can be present in as-grown carbon nanotubes, but controlling externally their density opens a path towards the tuning of the nanotube electronic characteristics. In this work consecutive Ar+ irradiation doses are applied to single-walled nanotubes (SWNTs) producing a uniform density of defects. After each dose, the room temperature resistance versus SWNT-length [R(L)] along the nanotube is measured. Our data show an exponential dependence of R(L) indicating that the system is within the strong Anderson localization regime. Theoretical simulations demonstrate that mainly di-vacancies contribute to the resistance increase induced by irradiation and that just a 0.03% of di-vacancies produces an increase of three orders of magnitude in the resistance of a 400 nm SWNT length.
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Submitted 23 November, 2005;
originally announced November 2005.
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Anderson localization in carbon nanotubes: defect density and temperature effects
Authors:
Blanca Biel,
F. J. Garcia-Vidal,
Angel Rubio,
Fernando Flores
Abstract:
The role of irradiation induced defects and temperature in the conducting properties of single-walled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that di-vacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of di-vacancies (5-9) bri…
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The role of irradiation induced defects and temperature in the conducting properties of single-walled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that di-vacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of di-vacancies (5-9) brings up strong Anderson localization effects and a seemly universal curve for the resistance as a function of the number of defects. It is also shown that low temperatures, around 15-65 K, are enough to smooth out the fluctuations of the conductance without destroying the exponential dependence of the resistivity as a function of the tube length.
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Submitted 10 November, 2005;
originally announced November 2005.
