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Recent progress on electron- and magnon-mediated torques
Authors:
Jia-Min Lai,
Bingyue Bian,
Zhonghai Yu,
Kaiwei Guo,
Yajing Zhang,
Pengnan Zhao,
Xiaoqian Zhang,
Chunyang Tang,
Jiasen Cao,
Zhiyong Quan,
Fei Wang,
Xiaohong Xu
Abstract:
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms o…
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The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms of electron-mediated torques (including both conventional SOTs and orbital torques) and magnon-mediated torques. We discuss key materials that enable these effects: heavy metals, topological insulators, low-crystal-symmetry materials, non-collinear antiferromagnets, and altermagnets for conventional SOTs; 3d, 4d, and 5d transition metals for orbital torques; and antiferromagnetic insulator NiO- and multiferroic BiFeO3-based sandwich structures for magnon torques. We emphasize that although key components of SOT devices have been demonstrated, numerous promising materials and critical questions regarding their underlying mechanisms remain to be explored. Therefore, this field represents a dynamic and rapidly evolving frontier in spintronics, offering significant potential for advancing next-generation information storage and computational technologies.
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Submitted 14 May, 2025;
originally announced May 2025.
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Ultra-high mobility semiconducting epitaxial graphene on silicon carbide
Authors:
Jian Zhao,
Peixun Ji,
Yaqi Li,
Rui Li,
Kaiming Zhang,
Hao Tian,
Kaichen Yu,
Boyue Bian,
Luzhen Hao,
Xue Xiao,
Will Griffin,
Noel Dudeck,
Ramiro Moro,
Lei Ma,
Walt A. de Heer
Abstract:
Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene la…
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Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene layer forms on the surfaces [2]. The first epigraphene layer to form on the silicon terminated face, known as the buffer layer, is insulating. It is chemically bonded to the SiC and spectroscopic measurements [3] have identified semiconducting signatures on the microscopic domains. However, the bonding to the SiC is disordered and the mobilities are small. Here we demonstrate a quasi-equilibrium annealing method that produces macroscopic atomically flat terraces covered with a well ordered epigraphene buffer layer that has a 0.6 eV bandgap. Room temperature mobilities exceed 5000 cm2/Vs which is much larger than silicon and 20 times larger than the phonon scattering imposed limit of current 2D semiconductors. Critical for nanotechnology, its lattice is aligned with the SiC substrate, it is chemically, mechanically, and thermally robust, and it can be conventionally patterned and seamlessly connected to semimetallic epigraphene making semiconducting epigraphene ideally suited for nanoelectronics.
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Submitted 23 August, 2023;
originally announced August 2023.
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Great Wall-like Water-based Switchable Frequency Selective Rasorber with Polarization Selectivity
Authors:
Lingqi Kong,
Xiangkun Kong,
Shunliu Jiang,
Yuanxin Lee,
Lei Xing,
Borui Bian
Abstract:
A water-based switchable frequency selective rasorber with polarization selectivity using the Great Wall structures is presented in this paper. The proposed structure comprises a container containing horizontal and vertical channels enabling dividable injection of water, and a cross-gap FSS. The novelty of the design lies in its switchability among four different operating states by injecting wate…
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A water-based switchable frequency selective rasorber with polarization selectivity using the Great Wall structures is presented in this paper. The proposed structure comprises a container containing horizontal and vertical channels enabling dividable injection of water, and a cross-gap FSS. The novelty of the design lies in its switchability among four different operating states by injecting water or not into the water channels. When the container is empty, the structure acts as a polarization-intensive FSS with a -0.42 dB insertion loss passband at 3.75 GHz. When the horizontal channel is filled with water and there is no water in the vertical channel, this structure can be used as an FSR with single polarization selectivity. The FSR with -10 dB absorption band from 6.8 GHz to 18.8 GHz only allows certain polarized electromagnetic (EM) waves to pass at 3.1 GHz with an insertion loss of -0.78 dB, while another polarized EM wave cannot pass. When the container is full of water, the structure operates as an absorber with a reflection band below the absorption band, where neither of polarization EM waves can transmit. Besides, a reconfigurable water-based FSR automatic control system is built to achieve state switching and temperature constancy of the water within the container. Ultimately, a prototype of the presented design is fabricated, simulated and measured to verify the feasibility. This work has potential application in radome design to realize the out-of-band RCS reduction.
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Submitted 24 November, 2020;
originally announced November 2020.
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Interaction-induced phase transitions of type-II Weyl semimetals
Authors:
Yi-Xiang Wang,
Fuxiang Li,
Baoan Bian
Abstract:
The study of Weyl semimetals (WSMs) lies at the forefront of the nontrivial topological phenomena in condensed-matter physics. In this work, we study the effect of on-site repulsive Hubbard interaction on the WSM system with a nonzero tilt at half filling. Within the Hartree-Fock mean-field approximation, we treat the Hubbard interaction self-consistently and find that the Fock exchange field vani…
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The study of Weyl semimetals (WSMs) lies at the forefront of the nontrivial topological phenomena in condensed-matter physics. In this work, we study the effect of on-site repulsive Hubbard interaction on the WSM system with a nonzero tilt at half filling. Within the Hartree-Fock mean-field approximation, we treat the Hubbard interaction self-consistently and find that the Fock exchange field vanishes, while the Hartree field can renormalize the topological mass, the tilt, and the Fermi velocity of the Weyl cones. When the renormalized tilt is larger than the renormalized Fermi velocity, the Hubbard interaction will induce the quantum phase transition from a type-I WSM to a type-II WSM. We then provide the interaction-induced phase diagrams of WSMs in different parametric spaces, in which the antiferromagnetic order at strong interaction is also considered. In addition, we analyze another model hosting two pairs of Weyl nodes, and similar results are obtained. The implications of these results are discussed.
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Submitted 18 January, 2020;
originally announced January 2020.
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Critical dynamics and universality of the random-bond Potts ferromagnet with tri-distributed quenched disorders
Authors:
H. P. Ying,
B. J. Bian,
D. R. Ji,
H. J. Luo,
L. Schuelke
Abstract:
Critical behavior in short-time dynamics is investigated by a Monte Carlo study for the random-bond Potts ferromagnet with a trinary distribution of quenched disorders on two-dimensional triangular lattices. The dynamic scaling is verified and applied to estimate critical exponents $θ$, $z$ and $β/ν$ for several realizations of the trinary distribution. Our critical scaling analysis strongly ind…
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Critical behavior in short-time dynamics is investigated by a Monte Carlo study for the random-bond Potts ferromagnet with a trinary distribution of quenched disorders on two-dimensional triangular lattices. The dynamic scaling is verified and applied to estimate critical exponents $θ$, $z$ and $β/ν$ for several realizations of the trinary distribution. Our critical scaling analysis strongly indicates that the bond randomness influences the critical universality.
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Submitted 17 March, 2001; v1 submitted 16 March, 2001;
originally announced March 2001.
