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Predicting Performance of Microfluidic-Based Alginate Microfibers with Feature-Supplemented Deep Neural Networks
Authors:
Nicholus R. Clinkinbeard,
Justin Sehlin,
Meharpal Singh Bhatti,
Marilyn McNamarra,
Reza Montazami,
Nicole N. Hashemi
Abstract:
Selection of solution concentrations and flow rates for the fabrication of microfibers using a microfluidic device is a largely empirical endeavor of trial-and-error, largely due to the difficulty of modeling such a multiphysics process. Machine learning, including deep neural networks, provides the potential for allowing the determination of flow rates and solution characteristics by using past f…
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Selection of solution concentrations and flow rates for the fabrication of microfibers using a microfluidic device is a largely empirical endeavor of trial-and-error, largely due to the difficulty of modeling such a multiphysics process. Machine learning, including deep neural networks, provides the potential for allowing the determination of flow rates and solution characteristics by using past fabrication data to train and validate a model. Unfortunately, microfluidics suffers from low amounts of data, which can lead to inaccuracies and overtraining. To reduce the errors inherent with developing predictive and design models using a deep neural network, two approaches are investigated: dataset expansion using the statistical properties of available samples and model enhancement through introduction of physics-related parameters, specifically dimensionless numbers such as the Reynolds, capillary, Weber, and Peclet numbers. Results show that introduction of these parameters provides enhanced predictive capability leading to increased accuracy, while no such improvements are yet observed for design parameter selection.
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Submitted 11 December, 2024;
originally announced December 2024.
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Electrical Control Grain Dimensionality with Multilevel Magnetic Anisotropy
Authors:
Shengyao Li,
Sabpreet Bhatti,
Siew Lang Teo,
Ming Lin,
Xinyue Pan,
Zherui Yang,
Peng Song,
Wanghao Tian,
Xinyu He,
Jianwei Chai,
Xian Jun Loh,
Qiang Zhu,
S. N. Piramanayagam,
Xiao Renshaw Wang
Abstract:
In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by grain dimensionality, which is set during the fabrication of magnetic thin films. Despite the intrinsic correlation between magnetic anisotropy and grain dimens…
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In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by grain dimensionality, which is set during the fabrication of magnetic thin films. Despite the intrinsic correlation between magnetic anisotropy and grain dimensionality, there is a lack of experimental evidence for electrically controlling grain dimensionality, thereby impeding the efficiency of magnetic anisotropy modulation. Here, we demonstrate an electric field control of grain dimensionality and prove it as the active mechanism for tuning interfacial magnetism. The reduction in grain dimensionality is associated with a transition from ferromagnetic to superparamagnetic behavior. We achieve a non-volatile and reversible modulation of the coercivity in both the ferromagnetic and superparamagnetic regimes. Subsequent electrical and elemental analysis confirms the variation in grain dimensionality upon the application of gate voltages, revealing a transition from a multidomain to a single-domain state accompanied by a reduction in grain dimensionality. Furthermore, we exploit the influence of grain dimensionality on domain wall motion, extending its applicability to multilevel magnetic memory and synaptic devices. Our results provide a strategy for tuning interfacial magnetism through grain size engineering for advancements in high-performance spintronics.
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Submitted 18 October, 2024; v1 submitted 28 May, 2024;
originally announced May 2024.
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Emulation of Neuron and Synaptic Functions in Spin-Orbit Torque Domain Wall Devices
Authors:
Durgesh Kumar,
Ramu Maddu,
Hong Jing Chung,
Hasibur Rahaman,
Tianli Jin,
Sabpreet Bhatti,
Sze Ter Lim,
Rachid Sbiaa,
S. N. Piramanayagam
Abstract:
Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To realize spin-based NC architecture, the computing elements such as synthetic neurons and synapses need to be developed. However, there are very few experimental…
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Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To realize spin-based NC architecture, the computing elements such as synthetic neurons and synapses need to be developed. However, there are very few experimental investigations on DW neurons and synapses. The present study demonstrates the energy-efficient operations of neurons and synapses by using novel reading and writing strategies. We have used a W/CoFeB-based energy-efficient SOT mechanism to drive the DWs at low current densities. We have used the concept of meander devices for achieving synaptic functions. By doing this, we have achieved 9 different resistive states in experiments. We have experimentally demonstrated the functional spike and step neurons. Additionally, we have engineered the anomalous Hall bars by incorporating several pairs, in comparison to conventional Hall crosses, to increase the sensitivity as well as signal-to-noise ratio (SNR). We performed micromagnetic simulations and transport measurements to demonstrate the above-mentioned functionalities.
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Submitted 15 December, 2022;
originally announced December 2022.
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Single-beam resonant spin amplification of electrons interacting with nuclei in a GaAs/(Al,Ga)As quantum well
Authors:
M. Kotur,
F. Saeed,
R. W. Mocek,
V. L. Korenev,
I. A. Akimov,
A. S. Bhatti,
D. R. Yakovlev,
D. Suter,
M. Bayer
Abstract:
The dynamic polarization of nuclear spins interacting with resident electrons under resonant excitation of trions is studied in a nominally undoped GaAs/(Al,Ga)As quantum well. Unlike in common time-resolved pump-probe techniques, we used a single beam approach where the excitation light is modulated between the circular and linear polarization states. The time-integrated intensity of the excitati…
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The dynamic polarization of nuclear spins interacting with resident electrons under resonant excitation of trions is studied in a nominally undoped GaAs/(Al,Ga)As quantum well. Unlike in common time-resolved pump-probe techniques, we used a single beam approach where the excitation light is modulated between the circular and linear polarization states. The time-integrated intensity of the excitation laser reflected from the sample surface, proportional to the optical generation rate and changes due to the pumping of the resident electrons, is detected. Polarized electrons on the other hand transfer their spin to the lattice nuclei via the hyperfine interaction. Exciting the sample with a train of pulses in an external magnetic field leads to resonant spin amplification observed when the Larmor precession frequency is synchronized with the laser pulse repetition rate. Build-up of the nuclear spin polarization causes a shifting of the RSA peaks since the resulting nuclear field alters the strength of the external magnetic field experienced by the electrons. It was established that the nuclear spin polarization time $T_1$ is temperature dependent and owing to the electron localization at lower temperatures becomes shorter. "Locking" of the nuclear field manifested as the limited by the strength of the external field growth of the nuclear field, that is related to the anisotropy of the electron $g$-factor, was observed. The $g$-factor ratio between the in plane $g_{\parallel}$ and out-of-plane $g_{\bot}$ components was estimated to be $g_{\bot}/g_{\parallel}=1.3$.
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Submitted 25 September, 2018;
originally announced September 2018.
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Single beam detection of optically driven spin dynamics in CdTe/(Cd,Mg)Te quantum wells
Authors:
F. Saeed,
M. Kuhnert,
I. A. Akimov,
V. L. Korenev,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
A. Ali,
A. S. Bhatti,
D. R. Yakovlev,
M. Bayer
Abstract:
We study optical pumping of resident electron spins under resonant excitation of trions in n-type CdTe/(Cd,Mg)Te quantum wells subject to a transverse magnetic field. In contrast to the comprehensively used time-resolved pump-probe techniques with polarimetric detection, we exploit here a single beam configuration in which the time-integrated intensity of the excitation laser light transmitted thr…
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We study optical pumping of resident electron spins under resonant excitation of trions in n-type CdTe/(Cd,Mg)Te quantum wells subject to a transverse magnetic field. In contrast to the comprehensively used time-resolved pump-probe techniques with polarimetric detection, we exploit here a single beam configuration in which the time-integrated intensity of the excitation laser light transmitted through the quantum wells is detected. The transmitted intensity reflects the bleaching of light absorption due to optical pumping of the resident electron spins and can be used to evaluate the Larmor precession frequency of the optically oriented carriers and their spin relaxation time. Application of the magnetic field leads to depolarization of the electron spin ensemble so that the Hanle effect is observed. Excitation with a periodic sequence of laser pulses leads to optical pumping in the rotating frame if the Larmor precession frequency is synchronized with the pulse repetition rate. This is manifested by the appearance of Hanle curves every 3.36 or 44.2 mT for pulse repetition rates of 75.8 or 999 MHz, respectively. From the experimental data we evaluate the g factor of |g|=1.61 and the spin relaxation time of 14 ns for the optically pumped resident electrons, in agreement with previous time-resolved pump-probe studies.
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Submitted 22 May, 2018;
originally announced May 2018.
