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Meta-learning of Gibbs states for many-body Hamiltonians with applications to Quantum Boltzmann Machines
Authors:
Ruchira V Bhat,
Rahul Bhowmick,
Avinash Singh,
Krishna Kumar Sabapathy
Abstract:
The preparation of quantum Gibbs states is a fundamental challenge in quantum computing, essential for applications ranging from modeling open quantum systems to quantum machine learning. Building on the Meta-Variational Quantum Eigensolver framework proposed by Cervera-Lierta et al.(2021) and a problem driven ansatz design, we introduce two meta-learning algorithms: Meta-Variational Quantum Therm…
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The preparation of quantum Gibbs states is a fundamental challenge in quantum computing, essential for applications ranging from modeling open quantum systems to quantum machine learning. Building on the Meta-Variational Quantum Eigensolver framework proposed by Cervera-Lierta et al.(2021) and a problem driven ansatz design, we introduce two meta-learning algorithms: Meta-Variational Quantum Thermalizer (Meta-VQT) and Neural Network Meta-VQT (NN-Meta VQT) for efficient thermal state preparation of parametrized Hamiltonians on Noisy Intermediate-Scale Quantum (NISQ) devices. Meta-VQT utilizes a fully quantum ansatz, while NN Meta-VQT integrates a quantum classical hybrid architecture. Both leverage collective optimization over training sets to generalize Gibbs state preparation to unseen parameters. We validate our methods on upto 8-qubit Transverse Field Ising Model and the 2-qubit Heisenberg model with all field terms, demonstrating efficient thermal state generation beyond training data. For larger systems, we show that our meta-learned parameters when combined with appropriately designed ansatz serve as warm start initializations, significantly outperforming random initializations in the optimization tasks. Furthermore, a 3- qubit Kitaev ring example showcases our algorithm's effectiveness across finite-temperature crossover regimes. Finally, we apply our algorithms to train a Quantum Boltzmann Machine (QBM) on a 2-qubit Heisenberg model with all field terms, achieving enhanced training efficiency, improved Gibbs state accuracy, and a 30-fold runtime speedup over existing techniques such as variational quantum imaginary time (VarQITE)-based QBM highlighting the scalability and practicality of meta-algorithm-based QBMs.
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Submitted 22 July, 2025;
originally announced July 2025.
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Distinguishing dynamical quantum criticality through local fidelity distances
Authors:
Ruchira V Bhat,
Soumya Bera
Abstract:
Using local quantum fidelity distances, we study the dynamical quantum phase transition in integrable and non-integrable one-dimensional Ising chains. Unlike the Loschmidt echo, the standard measure for distinguishing between two quantum states to describe the dynamical quantum phase transition, the local fidelity requires only a part of the system to characterize it. The non-analyticities in the…
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Using local quantum fidelity distances, we study the dynamical quantum phase transition in integrable and non-integrable one-dimensional Ising chains. Unlike the Loschmidt echo, the standard measure for distinguishing between two quantum states to describe the dynamical quantum phase transition, the local fidelity requires only a part of the system to characterize it. The non-analyticities in the quantum distance between two subsystem density matrices identify the critical time and the corresponding critical exponent reasonably well in a finite-size system. Moreover, we propose a distance measure from the upper bound of the local quantum fidelity for certain quench protocols where the entanglement entropy features oscillatory growth in time. This local distance encodes the difference between the eigenvalue distribution of the initial and quenched subsystem density matrices and quantifies the critical properties. The alternative distance measure could be employed to examine the dynamical quantum phase transitions in a broader range of models, with implications for gaining insights into the transition from the entanglement perspective.
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Submitted 1 August, 2023;
originally announced August 2023.
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Out of equilibrium chiral higher order topological insulator on a $π$-flux square lattice
Authors:
Ruchira V Bhat,
Soumya Bera
Abstract:
One of the hallmarks of bulk topology is the existence of robust boundary localized states. For instance, a conventional $d$ dimensional topological system hosts $d{-}1$ dimensional surface modes, which are protected by non-spatial symmetries. Recently, this idea has been extended to higher order topological phases with boundary modes that are localized in lower dimensions such as in the corners o…
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One of the hallmarks of bulk topology is the existence of robust boundary localized states. For instance, a conventional $d$ dimensional topological system hosts $d{-}1$ dimensional surface modes, which are protected by non-spatial symmetries. Recently, this idea has been extended to higher order topological phases with boundary modes that are localized in lower dimensions such as in the corners or in one dimensional hinges of the system. In this work, we demonstrate that a higher order topological phase can be engineered in a nonequilibrium state when the time-independent model does not possess any symmetry protected topological states. The higher order topology is protected by an emerging chiral symmetry, which is generated through the Floquet driving. Using both the exact numerical method and an effective high-frequency Hamiltonian obtained from the Brillouin-Wigner perturbation theory, we verify the emerging topological phase on a $π$-flux square lattice. We show that the localized corner modes in our model are robust against a chiral symmetry preserving perturbation and can be classified as `extrinsic' higher order topological phase. Finally, we identify a two dimensional topological invariant from the winding number of the corresponding sublattice symmetric one dimensional model. The latter model belongs to class AIII of ten-fold symmetry classification of topological matter.
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Submitted 3 November, 2020;
originally announced November 2020.
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Three-Dimensional Interface Roughness in Layered Semiconductor Structures and Its Effects on Intersubband Transitions
Authors:
Alex Y. Song,
Rajaram Bhat,
Pierre Bouzi,
Chung-En Zah,
Claire F. Gmachl
Abstract:
A general model for treating the effects of three dimensional interface roughness (IFR) in layered semiconductor structures has been derived and experimentally verified. Configurational averaging of the IFR potential produces an effective grading potential in the out-of-plane direction, greatly altering the energy spectrum of the structures. IFR scattering self-energy is also derived for the gener…
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A general model for treating the effects of three dimensional interface roughness (IFR) in layered semiconductor structures has been derived and experimentally verified. Configurational averaging of the IFR potential produces an effective grading potential in the out-of-plane direction, greatly altering the energy spectrum of the structures. IFR scattering self-energy is also derived for the general case; when IFR is strong, its scattering effect is shown to dominate over phonon interaction and impurity scattering. When applied to intersubband transitions, the theoretical predictions explain the experimental observation of the anomalous energy shift and unusual broadening of the ISB transitions in III-Nitride thin-layered superlattices.
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Submitted 21 July, 2015;
originally announced July 2015.
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Quasi-angular momentum of Bose and Fermi gases in rotating optical lattices
Authors:
Brandon M. Peden,
Rajiv Bhat,
Meret Krämer,
Murray J. Holland
Abstract:
The notion of quasi-angular momentum is introduced to label the eigenstates of a Hamiltonian with a discrete rotational symmetry. This concept is recast in an operatorial form where the creation and annihilation operators of a Hubbard Hamiltonian carry units of quasi-angular momentum. Using this formalism, the ground states of ultracold gases of non-interacting fermions in rotating optical latti…
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The notion of quasi-angular momentum is introduced to label the eigenstates of a Hamiltonian with a discrete rotational symmetry. This concept is recast in an operatorial form where the creation and annihilation operators of a Hubbard Hamiltonian carry units of quasi-angular momentum. Using this formalism, the ground states of ultracold gases of non-interacting fermions in rotating optical lattices are studied as a function of rotation, and transitions between states of different quasi-angular momentum are identified. In addition, previous results for strongly-interacting bosons are re-examined and compared to the results for non-interacting fermions. Quasi-angular momentum can be used to distinguish between these two cases. Finally, an experimentally accessible signature of quasi-angular momentum is identified in the momentum distributions of single-particle eigenstates.
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Submitted 18 October, 2007; v1 submitted 2 July, 2007;
originally announced July 2007.
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Hall effects in Bose-Einstein condensates in a rotating optical lattice
Authors:
Rajiv Bhat,
M. Kraemer,
J. Cooper,
M. J. Holland
Abstract:
Using the Kubo formalism, we demonstrate fractional quantum Hall features in a rotating Bose-Einstein condensate in a co-rotating two-dimensional optical lattice. The co-rotating lattice and trap potential allow for an effective magnetic field and compensation of the centrifugal potential. Fractional quantum Hall features are seen for the single-particle system and for few strongly interacting m…
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Using the Kubo formalism, we demonstrate fractional quantum Hall features in a rotating Bose-Einstein condensate in a co-rotating two-dimensional optical lattice. The co-rotating lattice and trap potential allow for an effective magnetic field and compensation of the centrifugal potential. Fractional quantum Hall features are seen for the single-particle system and for few strongly interacting many-particle systems.
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Submitted 23 May, 2007;
originally announced May 2007.
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Quantized Vortex States of Strongly Interacting Bosons in a Rotating Optical Lattice
Authors:
Rajiv Bhat,
B. M. Peden,
B. T. Seaman,
M. Kramer,
L. D. Carr,
M. J. Holland
Abstract:
Bose gases in rotating optical lattices combine two important topics in quantum physics: superfluid rotation and strong correlations. In this paper, we examine square two-dimensional systems at zero temperature comprised of strongly repulsive bosons with filling factors of less than one atom per lattice site. The entry of vortices into the system is characterized by jumps of 2 pi in the phase wi…
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Bose gases in rotating optical lattices combine two important topics in quantum physics: superfluid rotation and strong correlations. In this paper, we examine square two-dimensional systems at zero temperature comprised of strongly repulsive bosons with filling factors of less than one atom per lattice site. The entry of vortices into the system is characterized by jumps of 2 pi in the phase winding of the condensate wavefunction. A lattice of size L X L can have at most L-1 quantized vortices in the lowest Bloch band. In contrast to homogeneous systems, angular momentum is not a good quantum number since the continuous rotational symmetry is broken by the lattice. Instead, a quasi-angular momentum captures the discrete rotational symmetry of the system. Energy level crossings indicative of quantum phase transitions are observed when the quasi-angular momentum of the ground-state changes.
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Submitted 28 July, 2006;
originally announced July 2006.
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Calculations of two-color interband optical injection and control of carrier population, spin, current, and spin current in bulk semiconductors
Authors:
R. D. R. Bhat,
J. E. Sipe
Abstract:
Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection can all be controlled. We calculate injection spectra for these effects using a 14x14 k.p Hamiltonian including remote band effects for five bulk sem…
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Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection can all be controlled. We calculate injection spectra for these effects using a 14x14 k.p Hamiltonian including remote band effects for five bulk semiconductors of zinc-blende symmetry: InSb, GaSb, InP, GaAs, and ZnSe. Microscopic expressions for spin-current injection and spin control accounting for spin split bands are presented. We also present analytical expressions for the injection spectra derived in the parabolic-band approximation and compare these with the calculation nonperturbative in k.
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Submitted 12 January, 2006;
originally announced January 2006.
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Alloy disorder effects on the room temperature optical properties of GaInNAs quantum wells
Authors:
Bhavtosh Bansal,
Abdul Kadir,
Arnab Bhattacharya,
B. M. Arora,
Rajaram Bhat
Abstract:
The effect of alloy disorder on the optical density of states and the average room temperature carrier statistics in GaInNAs quantum wells is discussed. A red shift between the peak of the room temperature photoluminescence and the surface photovoltage spectra, that systematically increases with the nitrogen content within the quantum wells is observed. The relationship between this Stokes' shif…
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The effect of alloy disorder on the optical density of states and the average room temperature carrier statistics in GaInNAs quantum wells is discussed. A red shift between the peak of the room temperature photoluminescence and the surface photovoltage spectra, that systematically increases with the nitrogen content within the quantum wells is observed. The relationship between this Stokes' shift and the absorption linewidth in different samples suggests that the photoexcited carriers undergo a continuous transition, from being in quasi-thermal equilibrium with the lattice to being completely trapped by the quantum dot-like potential fluctuations, as the nitrogen fraction in the alloy is increased. The values of the 'electron temperature' inferred from the photoluminescence spectra are found to be consistent with this interpretation.
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Submitted 11 November, 2005;
originally announced November 2005.
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Bose-Einstein Condensates in Rotating Lattices
Authors:
Rajiv Bhat,
L. D. Carr,
M. J. Holland
Abstract:
Strongly interacting bosons in 2D in a rotating square lattice are investigated via a modified Bose-Hubbard Hamiltonian. Such a system corresponds to a rotating lattice potential imprinted on a trapped Bose-Einstein condensate. Second-order quantum phase transitions between states of different symmetries are observed at discrete rotation rates. For the square lattice we study, there are four pos…
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Strongly interacting bosons in 2D in a rotating square lattice are investigated via a modified Bose-Hubbard Hamiltonian. Such a system corresponds to a rotating lattice potential imprinted on a trapped Bose-Einstein condensate. Second-order quantum phase transitions between states of different symmetries are observed at discrete rotation rates. For the square lattice we study, there are four possible ground-state symmetries.
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Submitted 13 January, 2006; v1 submitted 24 August, 2005;
originally announced August 2005.
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Excitonic effects on the two-color coherent control of interband transitions in bulk semiconductors
Authors:
R. D. R. Bhat,
J. E. Sipe
Abstract:
Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection may all be controlled. We extend the theory of these processes to include the electron-hole interaction. Our focus is on photon energies that excite…
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Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection may all be controlled. We extend the theory of these processes to include the electron-hole interaction. Our focus is on photon energies that excite carriers above the band edge, but close enough to it so that transition amplitudes based on low order expansions in $\mathbf{k}$ are applicable; both allowed-allowed and allowed-forbidden two-photon transition amplitudes are included. Analytic solutions are obtained using the effective mass theory of Wannier excitons; degenerate bands are accounted for, but envelope-hole coupling is neglected. We find a Coulomb enhancement of two-color coherent control process, and relate it to the Coulomb enhancements of one- and two-photon absorption. In addition, we find a frequency dependent phase shift in the dependence of photocurrent and spin current on the optical phases. The phase shift decreases monotonically from $π/2$ at the band edge to 0 over an energy range governed by the exciton binding energy. It is the difference between the partial wave phase shifts of the electron-hole envelope function reached by one- and two-photon pathways.
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Submitted 15 June, 2005;
originally announced June 2005.
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Two-photon spin injection in semiconductors
Authors:
R. D. R. Bhat,
P. Nemec,
Y. Kerachian,
H. M. van Driel,
J. E. Sipe,
Arthur L. Smirl
Abstract:
A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in (001)-oriented GaAs reveal an initial degree of spin polarization of 49% for both one- and two-photon spin injection at wavelengths of 775 and 1550 nm, in agreement with…
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A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in (001)-oriented GaAs reveal an initial degree of spin polarization of 49% for both one- and two-photon spin injection at wavelengths of 775 and 1550 nm, in agreement with theory. The macroscopic symmetry and microscopic theory for two-photon spin injection are reviewed, and the latter is generalized to account for spin-splitting of the bands. The degree of spin polarization of one- and two-photon optical orientation need not be equal, as shown by calculations of spectra for GaAs, InP, GaSb, InSb, and ZnSe using a 14x14 k.p Hamiltonian including remote band effects. By including the higher conduction bands in the calculation, cubic anisotropy and the role of allowed-allowed transitions can be investigated. The allowed-allowed transitions do not conserve angular momentum and can cause a high degree of spin polarization close to the band edge; a value of 78% is calculated in GaSb, but by varying the material parameters it could be as high as 100%. The selection rules for spin injection from allowed-allowed transitions are presented, and interband spin-orbit coupling is found to play an important role.
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Submitted 17 August, 2004;
originally announced August 2004.
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Pure spin current from one-photon absorption of linearly polarized light in noncentrosymmetric semiconductors
Authors:
R. D. R. Bhat,
F. Nastos,
Ali Najmaie,
J. E. Sipe
Abstract:
We show that one-photon absorption of linearly polarized light should produce pure spin currents in noncentrosymmetric semiconductors, including even bulk GaAs. We present 14x14 k.p model calculations of the effect in GaAs, including strain, and pseudopotential calculations of the effect in wurtzite CdSe.
We show that one-photon absorption of linearly polarized light should produce pure spin currents in noncentrosymmetric semiconductors, including even bulk GaAs. We present 14x14 k.p model calculations of the effect in GaAs, including strain, and pseudopotential calculations of the effect in wurtzite CdSe.
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Submitted 10 March, 2005; v1 submitted 2 April, 2004;
originally announced April 2004.
